Philips (Now NXP) BGA2709 Schematic [ru]

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ook, halfpage

MBD128

BGA2709

MMIC wideband amplifier

Product specification
Supersedes data of 2002 Feb 05

2002 Aug 06

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2709

FEATURES

• Internally matched to 50 Ω

• Very widefrequency range (3.6 GHz at 3 dB bandwidth)

• Flat 23 dB gain (DC to 2.6 GHz at 1 dB flatness)

• 12.5 dBm saturated output power at 1 GHz

• High linearity (22 dBm OIP3 at 1 GHz)

• Unconditionally stable (K > 1.2).

APPLICATIONS

• Cable systems

• LNB IF amplifiers

• General purpose

• ISM.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3 RF out
4 GND1
6 RF in

56

4

63

132

Top view

Marking code: E3-.

MAM455

Fig.1 Simplified outline (SOT363) and symbol.

1

2, 54

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S

I

S

2

|s

|

21

DC supply voltage 5 6 V
DC supply current 23.5 − mA

insertion power gain f = 1 GHz 22.7 − dB
NF noise figure f = 1 GHz 4 − dB
P

L(sat)

saturated load power f = 1 GHz 12.5 − dBm

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

DC supply voltage RF input AC coupled − 6V

supply current − 35 mA

total power dissipation Ts≤ 90 °C − 200 mW

storage temperature −65 +150 °C

operating junction temperature − 150 °C

maximum drive power − 10 dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Aug 06 2

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2709

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

CHARACTERISTICS

=5V; IS= 23.5 mA; Tj=25°C unless otherwise specified.

V

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2

|s

|

21

R

LIN

R

L OUT

2

|s

|

12

NF noise figure f = 1 GHz − 4.0 4.4 dB

BW bandwidth at |s
K stability factor f = 1 GHz 1.3 1.7 −−

P

L(sat)

P

L 1 dB

IP3

(in)

IP3

(out)

thermal resistance from junction to solder

P

= 200 mW; Ts≤ 90 °C 300 K/W

tot

point

supply current 19 23.5 32 mA

insertion power gain f = 100 MHz 21 22.2 23 dB

f = 1 GHz 21 22.7 24 dB
f = 1.8 GHz 22 23.0 24 dB
f = 2.2 GHz 21 23.0 24 dB
f = 2.6 GHz 20 22.1 23 dB
f = 3 GHz 18 21.1 22 dB

return losses input f = 1 GHz 9 11 − dB

f = 2.2 GHz 9 11 − dB

return losses output f = 1 GHz 17 20 − dB

f = 2.2 GHz 20 24 − dB

isolation f= 1.6 GHz 31 33 − dB

f = 2.2 GHz 34 36 − dB

f = 2.2 GHz − 4.4 4.9 dB

|2−3 dB below flat gain at 1 GHz 3.1 3.6 − GHz

21

f = 2 GHz 1.8 2.2 −−

saturated load power f = 1 GHz 11 12.5 − dBm

f = 2.2 GHz 5 7.5 − dBm

load power at 1 dB gain compression; f = 1 GHz 7 8.3 − dBm

at 1 dB gain compression; f = 2.2 GHz 3 5.4 − dBm

input intercept point f = 1 GHz −3 −1 − dBm

f = 2.2 GHz −7 −9 − dBm

output intercept point f = 1 GHz 20 22 − dBm

f = 2.2 GHz 12 14 − dBm

2002 Aug 06 3

Philips Semiconductors Product specification

MMIC wideband amplifier BGA2709

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the
BGA2709MMIC.Thedeviceisinternallymatchedto50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.

The nominal value of the RF choke, L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value must be used (e.g. 10 nH) to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.

Both the RF choke, L1 and the 22 nF supply decoupling
capacitor, C1 should be located as closely as possible to
the MMIC.

Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.

InFig.6 the MMIC is used as a driver to thepoweramplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.

handbook, halfpage

DC-block

100 pF

input output

DC-block

100 pF

DC-block

100 pF

MGU437

Fig.3 Simple cascade circuit.

oscillator

mixer

wideband

amplifier

to IF circuit
or demodulator

MGU438

handbook, halfpage

from RF

circuit

V

handbook, halfpage

s

RF input

C1

V

s

RF outRF in

C2 C3

GND2GND1

L1

RF output

MGU436

Fig.2 Typical application circuit.

Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.

The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).

handbook, halfpage

antenna

handbook, halfpage

from modulation

or IF circuit

Fig.6 Power amplifier driver application.

Fig.4 IF amplifier application.

LNA

mixer

wideband

amplifier

oscillator

to IF circuit
or demodulator

Fig.5 RF amplifier application.

mixer

wideband

amplifier

oscillator

MGU439

to power
amplifier

MGU440

2002 Aug 06 4