Philips (Now NXP) BGA2031/1 Schematic [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

BGA2031/1

MMIC variable gain amplifier

Product specification
Supersedes data of 2000 Mar 02

2001 Feb 05

Philips Semiconductors Product specification

MMIC variable gain amplifier BGA2031/1

FEATURES

• High gain

• Excellent adjacent channel power rejection

• Small SMD package

• Low dissipation.

APPLICATIONS

• General purpose variable gain amplifier for low voltage
and medium power

• Driver for poweramplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technologyina6-pinSOT363SMDplasticpackageforlow
voltage medium power applications.

PINNING

PIN DESCRIPTION

1 RFin
2 CTRL
3V

S1

4VS2+ RFout
5 GND
6 GND

handbook, halfpage

654

RFin

CTRL

123

Top view

Marking code: A3−

V

S1

BIAS

CIRCUIT

Fig.1 Simplified outline (SOT363) and symbol.

VS2+RFout

GND

MAM440

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S1

V

S2

I

S

P

L

supply voltage 3 3.3 V
supply voltage 3 3.3 V
supply current; pins 3 and 4 V

load power at 1 dB gain compression point;

=0 0 10 µA

CTRL

= 2.7 V; VS=3V 5163mA

V

CTRL

V

= 2.4 V; VS=3V 3037mA

CTRL

13 − dBm

f = 1.9 GHz

ACPR adjacent channel power rejection f = 1.9 GHz; P

f = 836 MHz; P

G

p

power gain f = 1.9 GHz; PL= 12 dBm 23 − dB

f = 836 MHz; P

∆G gain control range f = 836 MHz; P

= 10 dBm 49 − dBc

L

= 8 dBm 48 − dBc

L

= 8 dBm 24 − dB

L

= 8 dBm 62 − dB

L

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2001 Feb 05 2

Philips Semiconductors Product specification

MMIC variable gain amplifier BGA2031/1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

V

CTRL

I

CTRL

I

S1

I

S2

P

D

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

DC supply voltage − 3.3 V
control voltage − <V

S

V
control current − 1.2 mA
supply current; pin 3 − 27 mA
supply current; pin 4 − 50 mA
drive power − +10 dBm
total power dissipation Ts≤ 80 °C − 200 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-s

300

handbook, halfpage

P

tot

(mW)

200

100

0

thermal resistance from junction to solder point 350 K/W

MLD490

0 50 100

150

Ts (°C)

200

Fig.2 Power derating.

2001 Feb 05 3

Philips Semiconductors Product specification

MMIC variable gain amplifier BGA2031/1

CHARACTERISTICS

Tj=25°C; ZS=ZL=50Ω; VS= 3 V; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

f frequency range 800 − 2500 MHz
V

S1

V

S2

I

S

I

CTRL

f = 1900 MHz

f frequency range 1850 − 1950 MHz
G

p

∆G gain control range 0 < V
G

CS

ACPR adjacent channel power

P

L

VSWR

IN

VSWR

OUT

f = 836 MHz

f frequency range 824 − 849 MHz
G

p

∆G gain control range 0 < V
G

CS

ACPR adjacent channel power

P

L

VSWR

IN

VSWR

OUT

supply voltage 2.7 3 3.3 V
supply voltage 2.7 3 3.3 V
supply current;

pins 3 and 4

control current V

power gain V

V

= 0; PD=0mW − 010µA

CTRL

V

= 2.7 V; VS=3V; PD=0mW375163mA

CTRL

= 2.4 V; VS=3V; PD=0mW233037mA

V

CTRL

= 2.7 V 0.7 0.92 1.1 mA

CTRL

= 2.7 V; PL= 12 dBm − 23 − dB

CTRL

< 2.7 V − 56 − dB

CTRL

gain control slope note 1 − 21 − dB/V

rejection

±1.23 MHz offset; BW
BW

= 1.23 MHz; PL= 10 dBm

carrier

±1.98 MHz offset; BW
BW

= 1.23 MHz; PL= 10 dBm

carrier

ACP

ACP

= 30 kHz;

= 30 kHz;

− 49 − dBc

− 74 − dBc

load power at 1 dB gain compression point − 13 − dBm
input VSWR V
output VSWR V

power gain V

= 2.7 V − 1:3.5 −

CTRL

= 2.7 V − 1:1.3 −

CTRL

= 2.7 V; PL= 8 dBm − 24 − dB

CTRL

< 2.7 V − 62 − dB

CTRL

gain control slope note 1 − 22 − dB/V

rejection

±885 kHz offset; BW
BW

= 1.23 MHz; PL= 8 dBm

carrier

±1.98 MHz offset; BW
BW

= 1.23 MHz; PL= 8 dBm

carrier

ACP

ACP

= 30 kHz;

= 30 kHz;

− 49 − dBc

− 74 − dBc

load power at 1 dB gain compression point − 11 − dBm
input VSWR V
output VSWR V

= 2.7 V − 1:2 −

CTRL

= 2.7 V − 1:1.4 −

CTRL

Note

1. G

=(GatV

CS

= 2.5 V − GatV

CTRL

= 1.5 V) / (V

CTRL

CTRL

2001 Feb 05 4

= 2.5 V − V

CTRL

= 1.5V)