Philips (Now NXP) BGA2022 Schematic [ru]

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

BGA2022

MMIC mixer

Product specification
Supersedes data of 2000 Jun 06

2000 Dec 04

Philips Semiconductors Product specification

MMIC mixer BGA2022

FEATURES

• Large frequency range:
– Cellular band (900 MHz)
– PCS band (1900 MHz)
– WLAN band (2.4 GHz)

• High isolation

• High linearity

• High conversion gain.

APPLICATIONS

Receiver side of wireless systems
that requirehigh conversion gain and
high linearity at low supply current,
such as CDMA.

DESCRIPTION

Silicon double poly MMIC mixer in a
6-lead SOT363 plastic package.

PINNING

PIN DESCRIPTION

1 LO - GND
2 LO - signal
3V

S

4 IF - out
5 RF - feedback
6 RF - signal

handbook, 4 columns

654

BIAS

CONTROL

123

Top view

IF-outRF-feedbackRF-signal

456

312

LO-GND LO-signal

Marking code: A2p.

V

S

MBL255

Fig.1 Simplified outline (SOT363) and symbol.

QUICK REFERENCE DATA

VS= 2.8 V; IS= 6 mA; PLO= 0 dBm; fRF= 1800 MHz; fLO= 2080 MHz; fIF= 280 MHz.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

G

conv

conversion gain 468dB
NF noise figure (DSB) − 12 − dB
IP

3

output third order intercept point − 7 − dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Dec 04 2

Philips Semiconductors Product specification

MMIC mixer BGA2022

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

LO

P

RF

P

tot

T

stg

T

j

Notes

1. LO and RF signals always AC coupled; 50 Ω source; no external DC voltage supplied to pins 1, 2 and 6.

2. Ts is the temperature at the soldering point of the ground tab.

supply voltage − 4V

supply current − 10 mA

oscillator power note 1 − 10 dBm

RF power note 1 − 10 dBm

total power dissipation Ts≤ 100 °C; note 2 − 40 mW

storage temperature −65 +150 °C

junction temperature − 150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-s

thermal resistance from junction to solder point 375 K/W

CHARACTERISTICS

= 2.8 V; IS= 6 mA; Tj=25°C; unless otherwise specified.

V

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

G

conv(p)

supply current VS=2.8V 468mA

power conversion gain PRF= −25 dBm; PLO= 0 dBm

880 MHz − 5 − dB
1800MHz 468dB
1950 MHz − 5 − dB
2450 MHz − 6 − dB

NF noise figure DSB

880 MHz − 9 − dB
1800 MHz − 12 − dB
1950 MHz − 9 − dB
2450 MHz − 9 − dB

IP

3

intercept point third order input output referred

880 MHz − 4 − dBm
1800 MHz − 7 − dBm
1950 MHz − 7 − dBm
2450 MHz − 10 − dBm

VSWR

return losses at LO port PLO= 0 dBm; f=0to3GHz −−2:1

LO

2000 Dec 04 3