Philips (Now NXP) BGA2012 Schematic [ru]

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
MBD128
BGA2012
1900 MHz high linear low noise amplifier
Product specification Supersedes data of 2000 Sep 06
2000 Dec 04
Philips Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012

FEATURES

Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.

APPLICATIONS

RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifierconsistingofanNPNdoublepolysilicontransistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.

PINNING

PIN DESCRIPTION
1 RF in 2V 3V
C S
4 RF out
5, 6 GND
BIAS
CIRCUIT
RF in
V
S
handbook, halfpage
132
Top view
Marking code: A6-
56
4
V
C
MBL251
Fig.1 Simplified outline (SOT363) and symbol.
RF out
GND

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
I
S
I
C
2
|
|s
21
DC supply voltage RF input AC coupled 3 4.5 V DC supply current 7.5 mA DC control current VC=V
S
insertion power gain in application circuit, see Fig.2;
0.11 mA 16 dB
f = 1900 MHz
NF noise figure I
= 7 mA; f = 1900 MHz 1.7 dB
S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
I
S
I
C
P
tot
T
stg
T
j
DC supply voltage RF input AC coupled 4.5 V voltage on control pin V
S
V supply current forced by DC voltage on RF input 15 mA control current 0.25 mA total power dissipation Ts≤ 100 °C 70 mW storage temperature 65 +150 °C operating junction temperature 150 °C
2000 Dec 04 2
Philips Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s

CHARACTERISTICS

RF input AC coupled; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
C
R
L IN
R
L OUT
2
|s
|
21
NF noise figure typical application; see Fig.2; I
IP3
in
thermal resistance from junction
P
= 135 mW; Ts≤ 100 °C 350 K/W
tot
to solder point
=3V; IS= 7 mA; f = 1900 MHz; Tj=25°C; unless otherwise specified.
S
supply current 5 7.5 10 mA control current 0.11 mA return losses input typical application; see Fig.2 −−11 dB
high IP3 (see Fig.2; stripline = 0 mm) −−20 dB high IP3 (see Fig.2; stripline = 0.5 mm) −−14 dB
return losses output typical application; see Fig.2 −−9−dB
high IP3 (see Fig.2; stripline = 0 mm) −−10 dB high IP3 (see Fig.2; stripline = 0.5 mm) −−8−dB
insertion power gain typical application (see Fig.2) 14 dB
high IP3 (see Fig.2; stripline = 0 mm) 16 dB high IP3 (see Fig.2; stripline = 0.5 mm) 14 dB
=7mA 1.7 dB
S
high IP3 (see Fig.2; stripline = 0 mm) 2.2 dB high IP3 (see Fig.2; stripline = 0.5 mm) 2.3 dB
input intercept point typical application; see Fig.2 −−7−dBm
high IP3 (see Fig.2; stripline = 0 mm) 7 dBm high IP3 (see Fig.2; stripline = 0.5 mm) 10 dBm
2000 Dec 04 3
Philips Semiconductors Product specification
1900 MHz high linear low noise amplifier BGA2012

APPLICATION INFORMATION

V
handbook, full pagewidth
RF in
V
S
V
V
C
C1
C
C5
IN
L1
C6
BIAS
CIRCUIT
SOT363
stripline
C4
L2
C2
OUT
GND
S
C3
RF out
MLD470
Fig.2 Application circuit.
List of components (see Fig.2)
COMPONENT DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603 C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603 C4 multilayer ceramic chip capacitor −−− C6 multilayer ceramic chip capacitor 100 nF 0805 L1 SMD inductor 3.9 nH 0603 L2 SMD inductor 3.9 nH 0603
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (ε
= 6.15),
r
board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm.
2000 Dec 04 4
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