Philips (Now NXP) BGA2011 Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
MBD128
BGA2011
900 MHz high linear low noise
amplifier
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
FEATURES
• Low current, low voltage
• High linearity
• High power gain
• Low noise
• Integrated temperature compensated biasing
• Control pin for adjustment bias current.
APPLICATIONS
• RF front end
• Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifierconsistingofanNPNdoublepolysilicontransistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN DESCRIPTION
1 RF in
2V
3V
C
S
4 RF out
5, 6 GND
BIAS
CIRCUIT
RF in
V
S
handbook, halfpage
132
Top view
Marking code:A5-
56
4
V
C
MBL251
Fig.1 Simplified outline (SOT363) and symbol.
RF out
GND
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
I
S
I
C
2
|
|s
21
DC supply voltage RF input AC coupled 3 4.5 V
DC supply current 15 − mA
DC control current VC=V
S
insertion power gain in application circuit, see Fig.2;
0.11 − mA
19 − dB
f = 900 MHz
NF noise figure I
= 15 mA; f = 900 MHz 1.7 − dB
S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
I
S
I
C
P
tot
T
stg
T
j
DC supply voltage RF input AC coupled − 4.5 V
voltage on control pin − V
S
V
supply current forced by DC voltage on RF input − 30 mA
control current − 0.25 mA
total power dissipation Ts≤ 100 °C − 135 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C
2000 Dec 04 2
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
CHARACTERISTICS
RF input AC coupled; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
C
R
LIN
R
L OUT
2
|s
|
21
NF noise figure typical application; see Fig.2;
IP3
in
thermal resistance from junction
P
= 135 mW; Ts≤ 100 °C 350 K/W
tot
to solder point
=3V; IS= 15 mA; f = 900 MHz; Tj=25°C; unless otherwise specified.
S
supply current 10 15 20 mA
control current − 0.11 − mA
return losses input typical application; see Fig.2 −−11 − dB
high IP3 (see Fig.2; stripline = 0 mm) −−11 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) −−17 − dB
return losses output typical application; see Fig.2 −−11 − dB
high IP3 (see Fig.2; stripline = 0 mm) −−12 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) −−14 − dB
insertion power gain typical application; see Fig.2 − 15 − dB
high IP3 (see Fig.2; stripline = 0 mm) − 19 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) − 16 − dB
− 1.5 − dB
I
=15mA
S
high IP3 (see Fig.2; stripline = 0 mm) − 1.6 − dB
high IP3 (see Fig.2; stripline = 1.5 mm) − 1.7 − dB
input intercept point typical application; see Fig.2 −−2−dBm
high IP3 (see Fig.2; stripline = 0 mm) − 4 − dBm
high IP3 (see Fig.2; stripline = 1.5 mm) − 10 − dBm
2000 Dec 04 3
Philips Semiconductors Product specification
900 MHz high linear low noise amplifier BGA2011
APPLICATION INFORMATION
V
handbook, full pagewidth
RF in
V
S
V
V
C
C1
C
C5
IN
L1
C6
BIAS
CIRCUIT
SOT363
stripline
C4
L2
C2
OUT
GND
S
C3
RF out
MLD480
Fig.2 Application circuit.
List of components (see Fig.2)
COMPONENT DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2 multilayer ceramic chip capacitor 100 pF 100 pF 0603
C3, C5 multilayer ceramic chip capacitor 22 nF 22 nF 0603
C4 multilayer ceramic chip capacitor 5.6 pF 5.6 pF 0603
C6 multilayer ceramic chip capacitor − 2 x 100 nF 0805
L1 SMD inductor − 10 nH 0603
L2 SMD inductor − 8.2 nH 0603
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (ε
= 6.15),
r
board thickness = 0.64 mm, copper thickness = 35 µm, gold thickness = 5 µm.
2000 Dec 04 4
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