Philips (Now NXP) BFU540 Schematic [ru]

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DATA SH EET

M3D124

BFU540

NPN SiGe wideband transistor

Product specification
Supersedes data of 2002 Jan 28

2003 Jun 12

Philips Semiconductors Product specification

NPN SiGe wideband transistor BFU540

FEATURES

• Very high power gain

• Very low noise figure

• High transition frequency

• Emitter is thermal lead

• Low feedback capacitance

• 45 GHz SiGe process.

APPLICATIONS

• RF front end

• Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

• Radar detectors

• Pagers

• Satellite television tuners (SATV)

• High frequency oscillators.

DESCRIPTION

NPNSiGewidebandtransistorforlowvoltageapplications
in a plastic, 4-pin dual-emitter SOT343R package.

PINNING

PIN DESCRIPTION

1 emitter
2 base
3 emitter
4 collector

handbook, halfpage

Marking code: A4.

43

21

Top view

MSB842

Fig.1 Simplified outline SOT343R.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CEO

I

C

P

tot

h

FE

G

max

NF noise figure I

collector-base voltage open emitter −−9V
collector-emitter voltage open base −−2.3 V
collector current (DC) − 40 50 mA
total power dissipation Ts≤ 98 °C −−115 mW
DC current gain IC= 40 mA; VCE=2V; Tj=25°C 70 140 210
maximum power gain IC= 40 mA; VCE= 2 V; f = 2 GHz; T

= 2 mA; VCE= 2 V; f = 2 GHz; ΓS= Γ

C

=25°C − 20 − dB

amb

opt

− 0.9 − dB

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2003 Jun 12 2

Philips Semiconductors Product specification

NPN SiGe wideband transistor BFU540

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

Note

1. Ts is the temperature at the soldering point of the emitter pins.

THERMAL CHARACTERISTICS

collector-base voltage open emitter − 9V
collector-emitter voltage open base − 2.3 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 50 mA
total power dissipation Ts≤ 98 °C; note 1; see Fig.2 − 115 mW
storage temperature −65 +150 °C
operating junction temperature − 150 °C

SYMBOL PARAMETER VALUE UNIT

R

th j-s

handbook, halfpage

(mW)

thermal resistance from junction to soldering point 450 K/W

120

MLE151

Ts (°C)

P

150

tot

100

50

0

0

40 80 160

Fig.2 Power derating curve.

2003 Jun 12 3

Philips Semiconductors Product specification

NPN SiGe wideband transistor BFU540

CHARACTERISTICS

Tj=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

C

c

C

re

G

max

NF noise figure I

P

L1

ITO third order intercept point I

collector-base breakdown voltage IC= 2.5 µA; IE=0 9 −−V
collector-emitter breakdown voltage IC= 1 mA; IB= 0 2.3 −−V
emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V
collector-base leakage current IE= 0; VCB= 4.5 V −−15 nA
DC current gain IC= 40 mA; VCE= 2 V 70 140 210
collector capacitance IE=ie= 0; VCB= 2 V; f = 1 MHz − 520 − fF
feedback capacitance IC= 0; VCB= 2 V; f = 1 MHz − 105 − fF
maximum power gain; note 1 IC= 40 mA; VCE= 2 V; f = 2 GHz;

T

=25°C

amb

= 2 mA; VCE= 2 V; f = 2 GHz;

C

ΓS= Γ

opt

output power at 1 dB gain
compression

IC= 20 mA; VCE= 2 V; f = 2 GHz;
ZS=Z

= 40 mA; VCE= 2 V; f = 2 GHz;

C

ZS=Z

S opt

S opt

; ZL=Z

; ZL=Z

L opt

L opt

; note 2

; note 2

− 20 − dB

− 0.9 − dB

− 11 − dBm

− 21 − dBm

Notes

1. G

is the maximum power gain, if K > 1. If K < 1 then G

max

2. ZS and ZL are optimized for gain.

max

= MSG.

2003 Jun 12 4

Philips Semiconductors Product specification

NPN SiGe wideband transistor BFU540

250

handbook, halfpage

h

FE

MLE152

200

150

100

50

0

10 20 30 40

050

IC (mA)

VCE= 2 V; Tj=25°C.

Fig.3 DC current gain as a function of collector

current; typical values.

50

handbook, halfpage

I

C

(mA)

40

30

20

10

0

0123

(1) IB= 400 µA.
(2) IB= 350 µA.
(3) IB= 300 µA.
(4) IB= 250 µA.

(5) IB= 200 µA.
(6) IB= 150 µA.
(7) IB= 100 µA.
(8) IB=50µA.

Fig.4 Output characteristics; typical values.

MLE153

(1)
(2)

(3)
(4)
(5)

(6)

(7)

(8)

V

(V)

CE

50

handbook, halfpage

f

T

(GHz)

40

30

20

10

0

110

VCB= 1 V; f = 2 GHz; T

amb

=25°C.

I

(mA)

C

Fig.5 Transition frequency as a function of

collector current; typical values.

MLE154

40

handbook, halfpage

MLE155

gain
(dB)

30

MSG

20

s

21

G

max

10

2

10

0

2

10

IC= 40 mA; VCE= 2 V; T

amb

10

=25°C.

3

f (MHz)

4

10

Fig.6 Gain as a function of frequency; typical

values.

2003 Jun 12 5

Philips Semiconductors Product specification

NPN SiGe wideband transistor BFU540

200

handbook, halfpage

C

re

(fF)

160

120

80

40

0

0 0.5

IC= 0; f = 1 MHz; T

amb

=25°C.

12

1.5
VCB (V)

Fig.7 Feedback capacitance as a function of

collector-base voltage; typical values.

MLE156

25

handbook, halfpage

ITO

(dBm)

20

15

10

5

0

110

VCE= 2 V; f = 2 GHz.

I

MLE157

(mA)

C

Fig.8 Third order intercept point as a function of

collector current.

2

10

12

handbook, halfpage

P

L 1dB

(dBm)

8

4

0

−4
1

VCE= 2 V; f = 2 GHz; source and load tuned for optimum gain.

10 10

MLE158

IC (mA)

Fig.9 Output power at 1 dB gain compression as

a function of collector current.

2

2003 Jun 12 6