Philips (Now NXP) BFG540W, BFG540W/X, BFG540W/XR Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification
Supersedes data of 1997 Dec 04
2000 May 23
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
RFfrontendwidebandapplicationsin
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
MARKING
TYPE NUMBER CODE
BFG540W N9
BFG540W/X N7
BFG540W/XR N8
PINNING
PIN DESCRIPTION
BFG540W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG540W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG540W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
BFG540W
BFG540W/X; BFG540W/XR
page
Top view
Fig.1 SOT343N.
lfpage
21
Top view
Fig.2 SOT343R.
34
21
MBK523
43
MSB842
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
2
|s
|
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
collector current (DC) −−120 mA
total power dissipation Ts≤ 85 °C −−500 mW
DC current gain IC= 40 mA; VCE= 8 V 100 120 250
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz; T
maximum unilateral
power gain
IC= 40 mA; VCE= 8 V; f = 900 MHz; T
I
= 40 mA; VCE= 8 V; f = 2 GHz; T
C
insertion power gain IC= 40 mA; VCE= 8 V; f = 900 MHz; T
; IC= 10 mA; VCE=8V; f=2GHz − 2.1 − dB
s=Γopt
=25°C − 9 − GHz
amb
=25°C − 16 − dB
amb
=25°C10−dB
amb
=25°C14 15 − dB
amb
2000 May 23 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 120 mA
total power dissipation Ts≤ 85 °C; see Fig.3; note 1 − 500 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
thermal resistance from junction to soldering point Ts≤ 85 °C; note 1 180 K/W
Note
1. T
is the temperature at the soldering point of the collector pin.
s
150
MBG248
o
T ( C)
s
600
handbook, halfpage
P
tot
(mW)
400
200
0
0 50 100 200
VCE≤ 10 V.
Fig.3 Power derating curve.
2000 May 23 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CES
collector-emitter breakdown
voltage
V
(BR)EBO
emitter-base breakdown
voltage
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
collector cut-off current open emitter; VCB=8V; IE=0 −−50 nA
DC current gain IC= 40 mA; VCE= 8 V 100 120 250
transition frequency IC= 40 mA; VCE= 8 V; f = 1 GHz;
collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.9 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 2 − pF
feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.5 − pF
maximumunilateralpowergain;
note 1
2
|s
|
21
insertion power gain IC= 40 mA;VCE= 8 V;f = 900 MHz;
F noise figure Γ
P
L1
output power at 1 dB gain
compression
ITO third order intercept point note 2 − 34 − dBm
V
o
d
2
output voltage note 3 − 500 − mV
second order intermodulation
distortion
open emitter; IC=10µA; IE=0 20 −−V
RBE= 0; IC=40µA15−−V
open collector; IE= 100 µA; IC= 0 2.5 −−V
− 9 − GHz
=25°C
T
amb
IC= 40 mA;VCE= 8 V;f = 900 MHz;
T
=25°C
amb
I
= 40 mA; VCE= 8 V; f = 2 GHz;
C
T
=25°C
amb
− 16 − dB
− 10 − dB
14 15 − dB
T
=25°C
amb
; IC= 10 mA; VCE=8V;
s=Γopt
− 1.3 1.8 dB
f = 900 MHz
Γ
; IC= 40 mA; VCE=8V;
s=Γopt
− 1.9 2.4 dB
f = 900 MHz
Γ
s=Γopt
; IC= 10 mA; VCE=8V;
− 2.1 − dB
f = 2 GHz
IC= 40 mA;VCE= 8 V;f = 900 MHz;
RL=50Ω; T
amb
=25°C
− 21 − dBm
note 4 −−50 − dB
Notes
1. G
2. IC= 40 mA; VCE=8V; RL=50Ω; T
is the maximum unilateral power gain, assuming s12 is zero.
UM
amb
a) fp= 900 MHz; fq= 902 MHz; measured at f
=25°C;
(2p − q)
G
= 898 MHz and f
UM
(2q − p)
10
-------------------------------------------------------1s
–()1s
= 904 MHz.
2
s
21
2
11
–()
22
3. dim= −60 dB (DIN45004B); Vp=Vo; Vq=Vo−6 dB; Vr=Vo−6 dB; RL=75Ω; VCE= 8 V; IC= 40 mA;
a) fp= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz; measured at f
4. IC= 40 mA; VCE= 8 V; Vo= 275 mV; RL=75Ω; T
a) fp= 250 MHz; fq= 560 MHz; measured at f
(p + q)
=25°C;
amb
= 810 MHz.
(p+q−r)
= 793.25 MHz.
2000 May 23 4
dB.log=
2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor
250
handbook, halfpage
h
FE
200
150
100
50
0
−2
10
10
−1
11010
MRA749
IC (mA)
2
handbook, halfpage
1
C
re
(pF)
0.8
0.6
0.4
0.2
0
04
BFG540W
BFG540W/X; BFG540W/XR
MRA750
812
VCB (V)
VCE=8V.
Fig.4 DC current gain as a function of
collector current; typical values.
12
handbook, halfpage
f
T
(GHz)
8
4
0
1
110
10
MLC044
V = 8 V
CE
V = 4 V
CE
I (mA)
C
IC= 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
2
10
f = 1 GHz; T
amb
=25°C.
Fig.6 Transition frequency as a function of
collector current; typical values.
2000 May 23 5
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