Philips (Now NXP) BFG10, BFG10/X Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
BFG10; BFG10/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of 1995 Mar 07
File under Discrete Semiconductors, SC14
1995 Aug 31
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
FEATURES
• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
PINNING
PIN DESCRIPTION
BFG10 (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG10/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
MARKING
TYPE NUMBER CODE
BFG10 N70
BFG10/X N71
handbook, 2 columns
12
Top view
Fig.1 SOT143.
34
MSB014
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C in a common-emitter test circuit (see Fig.7).
amb
f
(GHz)
V
(V)
CE
P
L
(mW)
G
(dB)
p
η
(%)
Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 200 ≥5 ≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 8V
emitter-base voltage open collector − 2.5 V
collector current (DC) − 250 mA
average collector current − 250 mA
total power dissipation up to Ts=60°C; see Fig.2; note 1 − 400 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
c
1995 Aug 31 2
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage open emitter; IC= 0.1 mA 20 − V
collector-emitter breakdown voltage open base; IC= 5 mA 8 − V
emitter-base breakdown voltage open collector; IE= 0.1 mA 2.5 − V
collector leakage current VCE=5V; VBE=0 − 100 µA
DC current gain IC= 50 mA; VCE=5V 25 −
collector capacitance IE=ie= 0; VCB= 3.6 V; f = 1 MHz − 3pF
feedback capacitance IC= 0; VCE= 3.6 V; f = 1 MHz − 2pF
up to Ts=60°C; note 1;
P
= 400 mW
tot
290 K/W
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0 50 100 200
150
Fig.2 Power derating curve
MLC818
o
T ( C)
s
2.0
handbook, halfpage
C
c
(pF)
1.5
1.0
0.5
0
01048
IC= 0; f= 1 MHz.
2
6
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
MLC819
VCB(V)
1995 Aug 31 3
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at T
=25°C in a common-emitter test circuit (see Fig.7).
amb
MODE OF OPERATION
f
(GHz)
Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 1 200
V
(V)
CE
I
CQ
(mA)
P
L
(mW)
G
(dB)
p
η
(%)
c
>5 >50
typ. 7 typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
10
handbook, halfpage
G
p
(dB)
8
6
4
2
MLC820
100
η
η
c
G
p
c
(%)
80
60
40
20
500
handbook, halfpage
P
L
(mW)
400
300
200
100
MLC821
0
Pulsed, class-AB operation.
VCE= 3.6 V; VBE= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL= 200 mW.
100 200 300 400
0 500
P (mW)
L
Fig.4 Power gain and efficiency as functions
of load power; typical values.
0
0
0 50 100 150
Pulsed, class-AB operation.
VCE= 3.6 V; VBE= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL= 200 mW.
P (mW)
D
Fig.5 Load power as a function of drive
power; typical values.
1995 Aug 31 4
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