Philips (Now NXP) BF822W Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
BF820W; BF822W
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors Product specification
NPN high-voltage transistors BF820W; BF822W
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
PINNING
PIN DESCRIPTION
1 base
2 emitter
APPLICATIONS
3 collector
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
MARKING
TYPE NUMBER MARKING CODE
BF820W 1Vt
BF822W 1Wt
handbook, halfpage
Top view
3
3
1
1
2
MAM062
2
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BF820W − 300 V
BF822W − 250 V
V
CEO
collector-emitter voltage open base
BF820W − 300 V
BF822W − 250 V
I
P
h
C
f
CM
tot
FE
re
T
peak collector current − 100 mA
total power dissipation T
≤ 25 °C − 200 mW
amb
DC current gain IC= 25 mA; VCE=20V 50 −
feedback capacitance IC=ic= 0; VCB= 30 V; f = 1 MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
1997 Sep 03 2
Philips Semiconductors Product specification
NPN high-voltage transistors BF820W; BF822W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BF820W − 300 V
BF822W − 250 V
collector-emitter voltage open base
BF820W − 300 V
BF822W − 250 V
emitter-base voltage open collector − 5V
collector current (DC) − 50 mA
peak collector current − 100 mA
peak base current − 50 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 625 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
V
C
f
T
FE
CEsat
re
collector cut-off current IE= 0; VCB= 200 V − 10 nA
= 0; VCB= 200 V; Tj= 150 °C − 10 µA
I
E
emitter cut-off current IC= 0; VEB=5V − 50 nA
DC current gain IC= 25 mA; VCE=20V 50 −
collector-emitter saturation voltage IC= 30 mA; IB= 5mA; note 1 − 600 mV
feedback capacitance IC=ic= 0; VCB= 30 V; f = 1 MHz − 1.6 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 60 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1997 Sep 03 3
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