Philips (Now NXP) BF747 Schematic [ru]
BF747
NPN 1 GHz wideband transistor
Rev. 03 — 27 July 2004 Product data sheet
1. Product profile
1.1 General description
Low cost NPN transistor in a SOT23 plastic package.
1.2 Features
■ Stable oscillator operation
■ High current gain
■ Good thermal stability.
1.3 Applications
■ Intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or
oscillator.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
V
CBO
V
EBO
I
CM
P
tot
f
T
[1] Tsis the temperature at the soldering point of the collector pin.
collector-emitter voltage open base - - 20 V
collector-base voltage open emitter - - 30 V
emitter-base voltage open collector - - 3 V
peak collector current - - 50 mA
total power dissipation Ts≤ 70 °C
transition frequency IC= 15 mA;
V
=10V;
CE
f = 500 MHz
[1]
- - 300 mW
- 1.2 1.6 GHz
Philips Semiconductors
2. Pinning information
Table 2: Discrete pinning
Pin Description Simplified outline Symbol
1 base
2 emitter
3 collector
BF747
NPN 1 GHz wideband transistor
3
3
1
3. Ordering information
Table 3: Ordering information
Type number Package
BF747 - plastic surface mounted package; 3 leads SOT23
4. Marking
Table 4: Marking
Type number Marking code
BF747 27*
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
12
SOT23
2
sym021
Name Description Version
[1]
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CEO
V
CBO
V
EBO
I
CM
P
tot
T
stg
T
j
[1] Tsis the temperature at the soldering point of the collector pin.
9397 750 13394 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 27 July 2004 2 of 15
collector-emitter voltage open base - 20 V
collector-base voltage open emitter - 30 V
emitter-base voltage open collector - 3 V
peak collector current - 50 mA
total power dissipation Ts≤ 70 °C
[1]
- 300 mW
storage temperature −55 +150 °C
junction temperature - 150 °C
Philips Semiconductors
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-s)
thermal resistance from junction
to soldering point
[1] Tsis the temperature at the soldering point of the collector pin.
7. Characteristics
Table 7: Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
h
f
T
C
G
FE
re
UM
collector cut-off
current
DC current gain IC= 2 mA; VCE= 10 V 40 95 250
transition
frequency
feedback
capacitance
maximum
unilateral power
gain
BF747
NPN 1 GHz wideband transistor
Ts≤ 70 °C
IE= 0 A; VCB= 10 V - - 100 nA
IC= 15 mA;
V
=10V;
CE
0.8 1.2 1.6 GHz
f = 500 MHz
IE=ie = 0 A;
V
=10V; f=1MHz
CB
IC= 15 mA;
V
=10V;
CE
- 0.5 - pF
[1]
-20-dB
f = 100 MHz
[1]
260 K/W
[1] GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s
G
UM
10 log
-----------------------------------------------------
1s
21
2
–()1s
11
–()
22
dB=
2
9397 750 13394 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 27 July 2004 3 of 15
Philips Semiconductors
BF747
NPN 1 GHz wideband transistor
400
P
tot
(mW)
300
200
100
0
0 20015050 100
mbb401
Ts (°C)
140
h
FE
100
60
20
−1
10
101
I
C
(mA)
mbb397
2
10
VCE=10V.
Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector
current.
C
(pF)
1.2
re
mbb400
f
T
(GHz)
1.4
mbb399
0.8
0.4
0
020168124
VCB (V)
IE=ie= 0 A; f= 1 MHz. VCE= 10 V; f = 500 MHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
1
0.6
0.2
−1
10
101
I
(mA)
C
2
10
Fig 4. Transition frequency as a function of collector
current.
9397 750 13394 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 27 July 2004 4 of 15
Philips Semiconductors
BF747
NPN 1 GHz wideband transistor
40
G
UM
(dB)
30
20
10
0
0302010
mbb407
IC (mA)
VCE= 10 V; f = 100 MHz. IC= 15 mA; VCE=10V.
Fig 5. Maximum unilateral power gain as a function of
collector current.
mbb398
V
CEsat
10
(V)
1
3
mbb408
4
f (MHz)
50
G
UM
dB)
(
30
10
−10
10 10
2
10
10
Fig 6. Maximum unilateral power gain as a function of
frequency.
8
F
(dB)
6
mbb409
−1
10
−2
10
−1
10
101
IC (mA)
10
IC/IB= 10. VCE=10V; ZS=ZL=50Ω; f = 100 MHz.
Fig 7. Collector-emitter saturation voltage as a
function of collector current.
4
2
2
0
−1
10
101
(mA)
I
C
2
10
Fig 8. Common emitter noise figure as a function of
collector current.
9397 750 13394 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 27 July 2004 5 of 15
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