Philips (Now NXP) BCV65 Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D071
BCV65
NPN/PNP general purpose
transistor
Product specification
Supersedes data of 1997 Apr 22
1999 Apr 22
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BCV65
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V).
PINNING
PIN DESCRIPTION
1, 3 collector
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
An NPN/PNP matched pair transistor in a SOT143B
plastic package.
MARKING
TYPE NUMBER MARKING CODE
BCV65 97p
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
2 common base
4 common emitter
43
21
Top view
MAM333
1
2
4
3
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
V
I
I
I
P
T
T
T
CBO
CEO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 30 V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation (per device) T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
1999 Apr 22 2
Philips Semiconductors Product specification
NPN/PNP general purpose transistor BCV65
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
h
FE
V
CEsat
V
BEsat
V
BE
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=30V −−15 nA
= 0; VCB=30V; Tj= 150 °C −−5µA
I
E
DC current gain IC= 2 mA; VCE=5V 75 − 800
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 90 300 mV
I
= 100 mA; IB=5mA − 250 650 mV
C
base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA; note 1 − 700 − mV
I
= 100 mA; IB= 5 mA; note 1 − 900 − mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V; note 2 580 650 750 mV
I
= 10 mA; VCE= 5 V; note 2 −−820 mV
C
Notes
1. V
decreases by approximately 1.7 mV/K with increasing temperature.
BEsat
2. VBE decreases by approximately 2 mV/K with increasing temperature.
1999 Apr 22 3
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