Philips (Now NXP) BC849BW, BC849CW, BC850BW, BC850CW Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
BC849W; BC850W
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 12
Philips Semiconductors Product specification
NPN general purpose transistors BC849W; BC850W
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
TYPE
NUMBER
MARKING
(1)
CODE
TYPE
NUMBER
MARKING
(1)
CODE
BC849BW 2B∗ BC850BW 2F∗
BC849CW 2C∗ BC850CW 2G∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
1
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC849W − 30 V
BC850W − 50 V
V
CEO
collector-emitter voltage open base
BC849W − 30 V
BC850W − 45 V
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12 2
Philips Semiconductors Product specification
NPN general purpose transistors BC849W; BC850W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
C
e
f
T
F noise figure I
thermal resistance from junction to ambient note 1 625 K/W
collector cut-off current IE= 0; VCB=30V −−15 nA
I
= 0; VCB=30V; Tj= 150 °C −−5µA
E
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 2 mA; VCE= 5 V; see Figs 2 and 3
BC849BW; BC850BW 200 − 450
BC849CW; BC850CW 420 − 800
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA −−250 mV
I
= 100 mA; IB= 5 mA; note 1 −−600 mV
C
base-emitter voltage IC= 2 mA; VCE= 5 V 580 − 700 mV
I
= 10 mA; VCE=5V −−770 mV
C
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−3pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 11 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz
= 200 µA; VCE=5V; RS=2kΩ;
C
−−4dB
f = 10 Hz to 15.7 kHz
I
= 200 µA; VCE=5V; RS=2kΩ;
C
−−4dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 12 3
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