Philips (Now NXP) BAT18 Schematic [ru]
BAT18
Silicon planar diode
Rev. 02 — 31 August 2004 Product data sheet
1. Product profile
1.1 General description
Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic
package.
1.2 Features
■ Continuous reverse voltage: max. 35 V
■ Continuous forward current: max. 100 mA
■ Low diode capacitance: max. 1.0 pF
■ Low diode forward resistance: max. 0.7 Ω.
1.3 Applications
■ Band switching.
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 anode
2 not connected
3 cathode
3. Ordering information
Table 2: Ordering information
Type number Package
BAT18 - plastic surface mounted package; 3 leads SOT23
3
1
12
Name Description Version
3
2
sym044
Philips Semiconductors
4. Marking
Table 3: Marking
Type number Marking code
BAT18 10*
[1] * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
5. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
I
F
T
stg
T
j
BAT18
Silicon planar diode
[1]
continuous reverse voltage - 35 V
continuous forward current - 100 mA
storage temperature −55 +125 °C
junction temperature - 125 °C
6. Thermal characteristics
Table 5: Thermal characteristics
Tj = 25°C unless otherwise specified.
Symbol Parameter Conditions Typ Unit
R
th(j-tp)
R
th(j-a)
[1] Device mounted on a FR4 printed-circuit board.
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient
7. Characteristics
Table 6: Electrical characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
r
D
forward voltage IF= 100 mA; see Figure 1 - - 1.2 V
reverse current see Figure 2
diode capacitance VR= 20 V; f= 1 MHz; see Figure 3 - 0.8 1.0 pF
diode forward
resistance
[1]
500 K/W
= 20 V - - 100 nA
V
R
= 20 V; Tj=60°C --1µA
V
R
IF= 5 mA; f = 200 MHz; see Figure 4 - 0.5 0.7 Ω
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 2 of 7
Philips Semiconductors
BAT18
Silicon planar diode
100
I
F
(mA)
80
60
40
20
0
0.3 1.51.10.7
(1) (2) (3)
001aab165
VF (V)
(1) Tj = 60 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig 1. Forward current as a function of forward
voltage.
001aab167
C
(pF)
1.5
d
1.3
5
10
I
R
(nA)
4
10
3
10
2
10
10
1
−1
10
0 16012040 80
001aab166
(1)
(2)
Tj (°C)
VR = 20 V.
(1) maximum values.
(2) typical values.
Fig 2. Reverse current as a function of junction
temperature.
001aab168
(Ω)
2
r
D
1.1
0.9
0.7
0.5
-1
10
101
VR (V)
2
10
f = 1 MHz; Tj = 25 °C. f = 200 MHz; Tj = 25 °C.
Fig 3. Diode capacitance as a function of reverse
voltage; typical values.
1
0
101
I
F
(mA)
2
10
Fig 4. Diode forward resistance as a function of
forward current; typical values.
9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 31 August 2004 3 of 7
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