Philips us1 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D168

US1 series

SMA ultra fast low-loss
controlled avalanche rectifiers

Product specification 2000 Feb 14

Philips Semiconductors Product specification

SMA ultra fast low-loss
controlled avalanche rectifiers

FEATURES

• Glass passivated

• High maximum operating temperature

• Ideal for surface mount automotive applications

• Low leakage current

• Excellent stability

• Guaranteed avalanche energy absorption capability

• UL 94V-O classified plastic package

• Shipped in 12 mm embossed tape

• Marking: cathode, date code, type code

• Easy pick and place.

US1 series

DESCRIPTION

DO-214AC surface mountable package with glass
passivated chip.

The well-defined void-free case is of a transfer-moulded
thermo-setting plastic.The small rectangular package has
two J bent leads.

lumns

ka

Top view Side view

Fig.1 Simplified outline (DO-214AC) and symbol.

cathode
band

MSA474

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage

US1A − 50 V
US1B − 100 V
US1D − 200 V
US1G − 400 V
US1J − 600 V

V

R

continuous reverse voltage

US1A − 50 V
US1B − 100 V
US1D − 200 V
US1G − 400 V
US1J − 600 V

V

RMS

root mean square voltage

US1A − 35 V
US1B − 70 V
US1D − 140 V
US1G − 280 V
US1J − 420 V

I

F(AV)

average forward current averaged over any 20 ms period;

− 1A

Ttp= 110 °C; see Fig.2

2000 Feb 14 2

Philips Semiconductors Product specification

SMA ultra fast low-loss

US1 series

controlled avalanche rectifiers

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

FSM

T

stg

T

j

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

F

I

R

t

rr

C

d

non-repetitive peak forward current t = 8.3 ms half sine wave;

− 25 A
Tj=25°C prior to surge;
VR=V

RRMmax

storage temperature −65 +175 °C
junction temperature See Fig.3 −65 +175 °C

forward voltage IF=1A;

US1A to US1G see Fig.4 − 1.1 V
US1J see Fig.5 − 1.4 V

reverse current VR=V

V

R=VRRMmax

reverse recovery time when switched from IF= 0.5 A to IR=1A;

; see Figs 6 and 7 − 10 µA

RRMmax

; Tj= 165 °C; see Figs 6 and 7 − 50 µA

− 50 ns

measured at IR= 0.25 A; see Fig.12

diode capacitance VR= 4 V; f = 1 MHz;

US1A to US1G see Fig.8 14 − pF
US1J see Fig.9 10 − pF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point; see Fig.10 27 K/W
thermal resistance from junction to ambient note 1 100 K/W

note 2 150 K/W

Notes

1. Device mounted on Al

printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm.

2O3

2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more
information please refer to the

‘General Part of associated Handbook’

.

2000 Feb 14 3

Philips Semiconductors Product specification

SMA ultra fast low-loss
controlled avalanche rectifiers

GRAPHICAL DATA

handbook, halfpage

2

I

F(AV)

(A)

1.5

1

0.5

0

0 40 200

VR=V

; δ = 0.5; a = 1.57.

RRMmax

80

120 160

Fig.2 Maximum permissible average forward

current as a function of tie-point
temperature (including losses due to
reverse leakage).

MCD822

Ttp (°C)

US1 series

Rmax

MBK455

)

200

handbook, halfpage

T

j

(°C)

100

0

0 100

Device mounted as shown in Fig.11.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.

50

VR (%V

Fig.3 Maximum permissible junction temperature

as a function of reverse voltage.

2

10

handbook, halfpage

I

F

(A)

10

1

−1

10

−2

10

−3

10

US1A to G

Tj=25°C.

10

MCD792

VF (V)

Fig.4 Forward current as a function of forward

voltage; typical values.

2

10

handbook, halfpage

I

F

(A)

10

1

−1

10

−2

10

−3

32

10

US1J

Tj=25°C.

103

MCD793

VF (V)

42

Fig.5 Forward current as a function of forward

voltage; typical values.

2000 Feb 14 4