Philips TZA3046 User Manual

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

Rev. 01 — 19 May 2006 Product data sheet

1. General description

The TZA3046 is a transimpedance ampliﬁer with AutomaticGainControl(AGC), designed to be used in Fiber Channel/Gigabit Ethernet (FC/GE) ﬁber optic links. It ampliﬁes the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differential output voltage. It offers a current mirror of average photo current for RSSI monitoring to be used in SFF-8472 compliant modules.

The low noise characteristics makes it suitable for FC/GE applications, but also for FTTx applications.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

2. Features

n Low equivalent input noise current, typically 126 nA (RMS) n Wide dynamic range, typically 2.5 µA to 1.7 mA (p-p) n Differential transimpedance of 7.5 kΩ (typical) n Bandwidth from DC to 1050 MHz (typical) n Differential outputs n On-chip AGC with possibility of external control n Single supply voltage 3.3 V, range 2.97 V to 3.6 V n Bias voltage for PIN diode n On-chip current mirror of average photo current for RSSI monitoring n Identical ports available on both sides of die for easy bond layout and RF polarity

3. Applications

n Digital ﬁber optic receiver modules in telecommunications transmission systems, in

selection

high-speed data networks or in FTTx systems.

Philips Semiconductors

4. Ordering information

Table 1: Ordering information

Type number Package

TZA3046U - bare die, dimensions approximately

5. Block diagram

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

Name Description Version

0.82 mm × 1.3 mm

IDREF_MON

DREF

Fig 1. Block diagram

VCC

IDREF_MON

DREF

PHOTO

IPHOTO

0.2 × I

5 or 16

1 or 3

DREF

low noise

amplifier

DREF

GAIN

CONTROL

V 4 or 17

DREF

290 Ω

AGC

6 or 15

PEAK DETECTOR

single-ended to

differential converter

9, 10, 11, 12 GND

BIASING

buffers

output

TZA3046

7 or 13

8 or 14

OUTQ

OUT

001aae511

Product data sheet Rev. 01 — 19 May 2006 2 of 15

Philips Semiconductors

6. Pinning information

6.1 Pinning

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

DREF

IPHOTO

DREF

174

IDREF_MON

165

AGC

156

OUT

OUTQ

129

GND

1110

GND

001aae512

IDREF_MON

AGC

OUTQ

OUT

GND

TZA3046

Fig 2. Pin conﬁguration

6.2 Pin description

Table 2: Bonding pad description

Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are inµm.

Symbol Pad X Y Type Description

DREF 1 −493.6 140 output bias voltage output for PIN diode; connect cathode of PIN diode to

pad 1 or pad 3 IPHOTO 2 −493.6 0 input current input; anode of PIN diode should be connected to this pad DREF 3 −493.6 −140 output bias voltage output for PIN diode; connect cathode of PIN diode to

pad 1 or pad 3 V

IDREF_MON 5 −213.6 −278.6 output current output for RSSI measurements; connect a resistor to pad 5

AGC 6 −73.6 −278.6 input AGC voltage; use pad 6 or pad 15 OUTQ 7 66.4 −278.6 output data output; complement of pad OUT; use pad 7 or pad 13 OUT 8 206.4 −278.6 output data output; use pad 8 or pad 14 GND 9 346.4 −278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as

GND 10 486.4 −278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as

4 −353.6 −278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17

or pad 16 and ground

[1]

possible

Product data sheet Rev. 01 — 19 May 2006 3 of 15

Philips Semiconductors

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

Table 2: Bonding pad description

Bonding pad locations with respect to the center of the die (see Figure 10); X and Y are inµm.

Symbol Pad X Y Type Description

GND 11 486.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as

GND 12 346.4 278.6 ground ground; connect together pads 9, 10, 11 and pad 12 as many as

OUTQ 13 206.4 278.6 output data output; complement of pad OUT; use pad 7 or pad 13 OUT 14 66.4 278.6 output data output; use pad 8 or pad 14 AGC 15 −73.6 278.6 input AGC voltage; use pad 6 or pad 15 IDREF_MON 16 −213.6 278.6 output current output for RSSI measurements; connect a resistor to pad 5

[1] These pads go HIGH when current ﬂows into pad IPHOTO.

17 −353.6 278.6 supply supply voltage; connect supply voltage to pad 4 or pad 17

…continued

possible

[1]

or pad 16 and ground

7. Functional description

The TZA3046 is a TransImpedance Ampliﬁer (TIA) intended for use in ﬁber optic receivers for signal recovery in FC/GE or FTTx applications. It ampliﬁes the current generated by a photo detector (PIN diode or avalanche photodiode) and converts it to a differentialoutput voltage.

The most important characteristics of the TZA3046 are high receiver sensitivity, wide dynamic range and large bandwidth. Excellent receiver sensitivity is achieved by minimizing transimpedance ampliﬁer noise.

The TZA3046 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 2.5 µA to 1.7 mA (p-p). This is implemented by an AGC loop which reduces the preampliﬁer feedback resistance so that the ampliﬁer remains linear over the whole input range. The AGC loop hold capacitor is integrated on-chip, so an external capacitor is not required.

The bandwidth of TZA3046 is optimized for FC/GE application. It works from DC onward due to the absence of offset control loops. Therefore the amount of Consecutive Identical Digits (CID) will not effect the output waveform. A differential ampliﬁer converts the output of the preampliﬁer to a differential voltage.

7.1 PIN diode connections

The performance of an optical receiver is largely determined by the combined effect of the transimpedance ampliﬁer and the PIN diode. In particular, the method used to connect the PIN diode to the input (pad IPHOTO) and the layout around the input pad strongly inﬂuences the main parameters of a transimpedance ampliﬁer, such as sensitivity, bandwidth, and PSRR.

Sensitivity is most affected by the value of the total capacitance at the input pad. Therefore,to obtain the highest possible sensitivity the total capacitance should be as low as possible.

Product data sheet Rev. 01 — 19 May 2006 4 of 15

Philips Semiconductors

The parasitic capacitance can be minimized through:

1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN diode and typically a high reverse voltage.

2. Reducing the parasitics around the input pad. This is achieved by placing the PIN diode as close as possible to the TIA.

The PIN diode can be biased with a positive or a negative voltage.Figure 3 shows the PIN diode biased positively, using the on-chip bias pad DREF. The voltage at DREF is derived from VCCby a low-pass ﬁlter comprising internal resistor R which decouples any supply voltage noise. The value of external capacitor C2 affects the value of PSRR and should have a minimum value of 470 pF. Increasing this value improves the value of PSRR. The current through R IDREF_MON, see Section 7.3.

If the biasing for the PIN diode is done external to the IC, pad DREF can be left unconnected. If a negative bias voltage is used, the conﬁguration shown in Figure 4 can be used. In this conﬁguration, the direction of the signal current is reversed to that shown in Figure 3. It is essential that in these applications, the PIN diode bias voltage is ﬁltered to achieve the best sensitivity.

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

and external capacitor C2

DREF

is measured and sourced at pad

DREF

For maximum freedom on bonding location, 2 outputs are available for DREF (pads 1 and 3). These are internally connected. Both outputs can be used if necessary. If only one is used, the other can be left open.

DREF

290 Ω

TZA3046

4 or 17

001aae514

4 or 17

DREF

1 or 3

DREF

C2 470 pF

IPHOTO

290 Ω

TZA3046

001aae513

Fig 3. The PIN diode connected between

the input and pad DREF

1 or 3

DREF

IPHOTO

negative

bias voltage

Fig 4. The PIN diode connected between

the input and a negative supply voltage

Product data sheet Rev. 01 — 19 May 2006 5 of 15

Philips Semiconductors

7.2 Automatic gain control

The TZA3046 transimpedance ampliﬁer can handle input currents from 2.5 µA to 1.7 mA which is equivalent to a dynamic range of 56 dB (electrical equivalent with 28 dB optical). At low input currents, the transimpedance must be high to obtain enough output voltage, and the noise should be low enough to guarantee a minimum bit error rate. At high input currents however,thetransimpedanceshouldbelowtoprevent excessive distortion at the output stage. To achieve the dynamic range, the gain of the ampliﬁer depends on the level of the input signal. This is achieved in the TZA3046 by an AGC loop.

The AGC loop comprises a peak detector and a gain control circuit. The peak detector detects the amplitude of the signal and stores it in a hold capacitor. The hold capacitor voltage is compared to a threshold voltage. The AGC is only active when the input signal level is larger than the threshold level and is inactive when the input signal is smaller than the threshold level.

When the AGC is inactive, the transimpedance is at its maximum. When the AGC is active,thefeedbackresistorvalueofthetransimpedanceampliﬁeris reduced, reducing its transimpedance, to keepthe output voltage constant. Figure 5 shows the transimpedance as function of the input current.

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

To reduce sensitivity to offsets and output loads, the AGC detector senses the output just before the output buffer. Figure 6 shows the AGC voltage as function of the input current.

001aae515

(µA)

transimpedance

(kΩ)

−1

110

10 10

Fig 5. Transimpedance as function of the PIN diode

current

001aae516

(µA)

3.5

AGC

(V)

2.5

1.5

0.5 110

10 10

Fig 6. AGC voltage as function of the PIN diode

current

Product data sheet Rev. 01 — 19 May 2006 6 of 15

Philips Semiconductors

For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times.

The AGC function can be overruled by applying a voltage to pad AGC. In this conﬁguration, connecting pad AGC to ground gives maximum transimpedance and connecting it to VCC gives minimum transimpedance. This is depicted in Figure 7. The AGC voltage should be derived from the VCC for proper functioning.

Formaximum freedom on bonding location, 2 pads are availablefor AGC (pads 6 and 15). These pads are internally connected. Both pads can be used if necessary.

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

transimpedance

(kΩ)

−1

0.3 0.90.70.5

Fig 7. Transimpedance as function of the AGC voltage

001aae517

AGC/VCC

7.3 Monitoring RSSI via IDREF_MON

To facilitate RSSI monitoring in modules (e.g. SFF-8472 compliant SFP modules), a current output is provided. This output gives a current which is 20 % of the average DREF current through the 290 Ω bias resistor. By connecting a resistor to the IDREF_MON output, a voltage proportional to the average input power can be obtained.

The RSSI monitoring is implemented by measuring the voltage over the 290 Ω bias resistor. This method is preferred over a simple current mirror because at small photo currents the voltage drop over the resistor is very small. This gives a higher bias voltage yielding better performance of the photodiode.

For maximum freedom on bonding location, 2 pads are available for IDREF_MON (pads 5 and 16). These pads are internally connected. Both pads can be used if necessary. If only one is used, the other can be left open.

Product data sheet Rev. 01 — 19 May 2006 7 of 15

Philips Semiconductors

8. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

amb

stg

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

supply voltage −0.5 +3.8 V voltage on any other

current on any other pin

total power dissipation - 300 mW ambient temperature −40 +85 °C junction temperature - 150 °C storage temperature −65 +150 °C

pad

IPHOTO −0.5 +2.0 V OUT, OUTQ −0.5 V AGC, IDREF_MON −0.5 V DREF −0.5 V

+ 0.5 V

pad

IPHOTO −4.0 +4.0 mA OUT, OUTQ −10 +10 mA AGC, IDREF_MON −0.2 +0.2 mA DREF −4.0 +4.0 mA

9. Characteristics

Table 4: Characteristics

Typical values at Tj=25°C and VCC= 3.3 V; minimum and maximum values are valid over the entire ambient temperature range and supply voltage range; all voltages are measured with respect to ground; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

tot

amb

-3dB(h)

n(rms)(itg)(tot)

Automatic gain control loop: pad AGC

att

decay

th(AGC)(p-p)

supply voltage 2.97 3.3 3.6 V supply current AC-coupled; R

excluding I

DREF

L(dif)

and I

= 100 Ω;

IDREF_MON

-21 23 mA

total power dissipation VCC= 3.3 V - 70 76 mW junction temperature −40 - +125 °C ambient temperature −40 +25 +85 °C small-signal

transresistance high frequency

measured differentially; AC-coupled, R

= 0.5 pF 800 1050 - MHz

L(dif)

= 100 Ω

5.5 7.5 10.5 kΩ

−3 dB point totalintegratedRMS noise

current over bandwidth

referenced to input; C

= 0.5 pF;

-3dB(min)

= 875 MHz

[1]

- 126 164 nA

attack time AGC pad unconnected - 14 - µs decay time AGC pad unconnected - 40 - µs peak-to-peak AGC

threshold voltage

referenced to output; measured differentially

- 125 - mV

Product data sheet Rev. 01 — 19 May 2006 8 of 15

Philips Semiconductors

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

Table 4: Characteristics

…continued

Symbol Parameter Conditions Min Typ Max Unit

Bias voltage: pad DREF

(DREF-VCC)

RDREF

resistance between pin DREF and pin V

temperature coefﬁcient of R

DREF

tested at DC level; T

=25°C

amb

260 290 320 Ω

- 0.33 - Ω/°C

Input: pad IPHOTO

IPHOTO(p-p)

peak-to-peak current on

[2][3]

−1000 +1700 - µA

pad IPHOTO

bias(i)

input bias voltage 700 850 1000 mV

Monitor: pad IDREF_MON

mon

IDREF_MON/IDREF

offset(mon)

I(offset)mon

monitor voltage 0 - VCC− 0.4 V monitor current ratio ratio I monitor offset current T

amb

temperature coefﬁcient of

IDREF_MON

=25°C 0 10 20 µA

/ I

DREF

19.5 20 20.5 %

- 30 - nA/°C

monitor offset current

Data outputs: pads OUT and OUTQ

O(cm)

common mode output

AC-coupled; R

= 100 Ω -VCC− 1.2 - V

L(dif)

voltage

o(dif)(p-p)

O(dif)

peak-to-peak differential output voltage

differential output

AC-coupled; R

= 2.5 µA (p-p) × R

= 100 µA (p-p) - 120 - mV

= 1500 µA (p-p)

L(dif)

= 100 Ω

14 19 - mV

[4]

- 325 600 mV

tested at DC level - 100 - Ω

resistance

rise time 20 % to 80 %;

= 100 µA (p-p)

fall time 80% to 20 %;

= 100 µA (p-p)

- 150 - ps

[1] Guaranteed by design.

amb

−10

= 25°

[2] Max input current is guaranteed for BER < 10 [3] Max input current is guaranteed for T [4] Max value of 500 mV belongs to I

Product data sheet Rev. 01 — 19 May 2006 9 of 15

= 1250 µA (p-p)

Philips Semiconductors

10. Application information

For maximum freedom on bonding location, 2 outputs are available for OUT and OUTQ. The outputs should be used in pairs: pad 14 with pad 7 or pad 8 with pad 13. Pad 8 is internally connected with pad 14, pad 7 is internally connected with pad 13. The device is guaranteed with only one pair used. The other pair should be left open. Two examples of the bonding possibilities are shown in Figure 8.

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

OUT

TZA3046U

GND

IDREF_MON

OUTQ

Fig 8. Application diagram highlighting ﬂexible pad lay out

IDREF_MON

OUTQ

TZA3046U

GND

OUT

001aae518

Product data sheet Rev. 01 — 19 May 2006 10 of 15

Product data sheet Rev. 01 — 19 May 2006 11 of 15

xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x

NETWORK ANALYZER

S-PARAMETER TEST SET

PATTERN

GENERATOR

CLOCK

DATA

DC-IN

22 nF

55 Ω

8.2

PORT1

4 or 17

OUT

8 or 14

kΩ

330 Ω

IPHOTO

TZA3046

9, 10, 11, 12

7 or 13

GND

OUTQ

22 nF

PORT2

= 50 ΩZo = 50 Ω

SAMPLING OSCILLOSCOPE

= 50 Ω

TRIGGER

INPUT

11. Test information

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

Philips Semiconductors

Total impedance of the test circuit (Z Typical values: R = 330 Ω, Zi=30Ω.

Fig 9. Test circuit

) is calculated by the equation Z

tot(tc)

tot(tc)=s21

001aae519

TZA3046

× (R+Zi) × 2, where s21 is the insertion loss of ports 1 and 2.

Philips Semiconductors

12. Bare die information

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

17 16 15 14 13 12 11

456

Origin is center of die.

(0,0)

78910

001aac627

Fig 10. Bonding pad locations

Table 5: Physical characteristics of the bare die

Parameter Value

Glass passivation 0.3 µm PSG (PhosphoSilicate Glass) on top of 0.8 µm silicon nitride Bonding pad

dimension

minimum dimension of exposed metallization is 90 µm × 90 µm (pad size = 100 µm × 100 µm) except pads 2 and 3 which have exposed

metallization of 80 µm × 80 µm (pad size = 90 µm × 90 µm) Metallization 2.8 µm AlCu Thickness 380 µm nominal

Die dimension 820 µm × 1300 µm (± 20 µm

) Backing silicon; electrically connected to GND potential through substrate contacts Attach temperature < 440 °C; recommended die attach is glue Attach time < 15 s

13. Package outline

Not applicable.

Product data sheet Rev. 01 — 19 May 2006 12 of 15

Philips Semiconductors

14. Handling information

14.1 General

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be completely safeyou must take normal precautions appropriate to handling MOS devices; see

14.2 Additional information

Pad IPHOTO has limited protection to ensure good RF performance. This pad should be handled with extreme care.

15. Abbreviations

Table 6. Abbreviations

Acronym Description

BER Bit Error Rate FTTx Fiber To The “x” OC3 Optical Carrier level 3 (155.52 Mbit/s) PIN Positive Intrinsic Negative PSRR Power Supply Rejection Ratio RSSI Received Signal Strength Indicator SDH Synchronous Digital Hierarchy SFP Small Form-factor Pluggable SONET Synchronous Optical NETwork STM1 Synchronous Transport Module 1 (155.52 Mbit/s

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

JESD625-A and/or IEC61340-5

TZA3046

16. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

TZA3046_1 20060519 Product data sheet - -

Product data sheet Rev. 01 — 19 May 2006 13 of 15

Philips Semiconductors

17. Legal information

17.1 Data sheet status

TZA3046

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] Theproduct status of device(s) described in this document may have changed since this document was published and may differin case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

17.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s)and title. A short data sheet isintended for quick referenceonly and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

17.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[3]

http://www.semiconductors.philips.com.

Deﬁnition

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Bare die — All die are tested on compliance with all related technical speciﬁcations as stated in this data sheet up to the point of wafer sawing for a period of ninety (90) days from the date of delivery by Philips Semiconductors. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post-packing tests performed on individual die or wafers.

Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used.

All die sales are conditioned upon and subject to the customer entering into a written die sale agreement with Philips Semiconductors through its legal department.

17.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks are the property of their respective owners.

18. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Product data sheet Rev. 01 — 19 May 2006 14 of 15

Philips Semiconductors

Fiber Channel/Gigabit Ethernet transimpedance ampliﬁer

19. Contents

1 General description . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Functional description . . . . . . . . . . . . . . . . . . . 4

7.1 PIN diode connections . . . . . . . . . . . . . . . . . . . 4

7.2 Automatic gain control . . . . . . . . . . . . . . . . . . . 6

7.3 Monitoring RSSI via IDREF_MON . . . . . . . . . . 7

8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Application information. . . . . . . . . . . . . . . . . . 10

11 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

12 Bare die information . . . . . . . . . . . . . . . . . . . . 12

13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Handling information. . . . . . . . . . . . . . . . . . . . 13

14.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14.2 Additional information . . . . . . . . . . . . . . . . . . . 13

15 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13

16 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

17.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

17.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

17.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

17.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

18 Contact information. . . . . . . . . . . . . . . . . . . . . 14

19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

TZA3046

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 19 May 2006

Document identifier: TZA3046_1

Philips TZA3046 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1. General description

2. Features

3. Applications

4. Ordering information

5. Block diagram

6. Pinning information

6.1 Pinning

6.2 Pin description

7. Functional description

7.1 PIN diode connections

7.2 Automatic gain control

7.3 Monitoring RSSI via IDREF_MON

8. Limiting values

9. Characteristics

10. Application information

11. Test information

12. Bare die information

13. Package outline

14. Handling information

14.1 General

14.2 Additional information

15. Abbreviations

16. Revision history

17. Legal information

17.1 Data sheet status

17.3 Disclaimers

17.4 Trademarks

18. Contact information

19. Contents