Philips TZA3031U, TZA3031BHL, TZA3031AHL Datasheet

INTEGRATED CIRCUITS
DATA SH EET
TZA3031AHL; TZA3031BHL; TZA3031U
Product specification Supersedes data of 1999 Aug 24 File under Integrated Circuits, IC19
2000 Feb 22
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
FEATURES
155 Mbits/s data input, bothCurrent Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p)
Adaptive laser output control with dual loop, stabilizing optical 1 and 0 levels
Optionalexternalcontroloflasermodulationandbiasing currents (non-adaptive)
Automatic laser shutdown
Few external components required
Rise and fall times of 120 ps (typical value)
Jitter <50 mUI (p-p)
RF output current sinking capability of 60 mA
Bias current sinking capability of 90 mA
Power dissipation of 430 mW (typical value)
Low cost LQFP32 5 × 5 plastic package
Single 5 V power supply.
TZA3031AHL
Laser alarm output for signalling extremely low and high bias current conditions.
TZA3031BHL
TZA3031AHL; TZA3031BHL;
TZA3031U
APPLICATIONS
SDH/SONET STM1/OC3 optical transmission systems
SDH/SONET STM1/OC3 optical laser modules.
GENERAL DESCRIPTION
The TZA3031AHL, TZA3031BHL and TZA3031U are fully integrated laser drivers for STM1/OC3 (155 Mbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC, the external component count is low. Only decoupling capacitors and adjustment resistors are required.
TheTZA3031AHL features an alarm functionforsignalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC).
The TZA3031BHL is provided with an additional RF data input to allow remote system testing (loop mode).
The TZA3031U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3031AHL and the TZA3031BHL.
ExtraSTM1 155 Mbits/s loop mode input; both CML and PECL compatible.
TZA3031U
Bare die version with combined bias alarm and loop mode functionality.
ORDERING INFORMATION
TYPE
NUMBER
TZA3031AHL LQFP32 plastic low profile quad flat package; 32 leads; body 5 × 5 × 1.4 mm SOT401-1 TZA3031BHL TZA3031U bare die; 2000 × 2000 × 380 µm
NAME DESCRIPTION VERSION
PACKAGE
2000 Feb 22 2
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
BLOCK DIAGRAM
TONE
handbook, full pagewidth
DIN
DINQ
ALARM
26
data input
(differential)
28 29
TZA3031AHL
19, 20
7
27, 30
411
V
CC(R)
V
CC(G)
V
4
10
CC(B)
ALARMLO
31
ALS
TZA3031AHL; TZA3031BHL;
TZA3031U
ALARMHITZERO
215
LASER
CONTROL
BLOCK
CURRENT
SWITCH
BAND GAP
REFERENCE
GND
18
1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32
MBK844
2
MONIN
22
ONE
23
ZERO
13
LA
12
LAQ
15
BIAS
6
BGAP
handbook, full pagewidth
DIN
DINQ
DLOOP
DLOOPQ
Fig.1 Block diagram of TZA3031AHL.
TONE
CC(B)
10
4
TZERO
31
ALS
LASER
CONTROL
BLOCK
CURRENT
SWITCH
BAND GAP
REFERENCE
1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32
GND
22 23
13 12 15
MBK843
2
MONIN ONE ZERO
LA LAQ BIAS
6
BGAP
ENL
26 5
28 29
19 20
MUX
TZA3031BHL
18, 21
7
27, 30
411
V
CC(R)
V
CC(G)
V
Fig.2 Block diagram of TZA3031BHL.
2000 Feb 22 3
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL;
TZA3031U
PINNING
SYMBOL
TZA3031AHL TZA3031BHL TZA3031U
GND 1 1 1 ground MONIN 2 2 2 monitor photodiode current input GND 3 3 3 ground IGM −−4 not connected TONE 4 4 5 connection for external capacitor used for setting
TZERO 5 5 6 connection for external capacitor used for setting
BGAP 6 6 7 connection for external band gap decoupling capacitor V
CC(G)
V
CC(G)
GND 8 8 10 ground GND 9 9 11 ground V V
CC(B) CC(B)
10 10 12 supply voltage (blue domain); note 2
GND 11 11 14 ground LAQ 12 12 15 laser modulation output inverted LA 13 13 16 laser modulation output GND 14 14 17 ground BIAS 15 15 18 laser bias current output GND 16 16 19 ground GND 17 17 20 ground GND −−21 ground ALARMHI 18 22 maximum bias current alarm reference level input V
CC(R)
V
CC(R)
19 −−supply voltage (red domain); note 3 DLOOP 19 24 loop mode data input V
CC(R)
20 −−supply voltage (red domain); note 3 DLOOPQ 20 25 loop mode data input inverted V
CC(R)
ALARMLO 21 27 minimum bias current alarm reference level input V
CC(R)
ONE 22 22 28 optical 1 reference level input ZERO 23 23 29 optical 0 reference level input GND 24 24 30 ground GND 25 25 31 ground ALARM 26 32 alarm output ENL 26 33 loop mode enable input V
CC(R)
27 27 34 supply voltage (red domain); note 3
PIN PAD
DESCRIPTION
optical 1 control loop time constant (optional)
optical 0 control loop time constant (optional)
7 7 8 supply voltage (green domain); note 1
−−9 supply voltage (green domain); note 1
−−13 supply voltage (blue domain); note 2
18 23 supply voltage (red domain); note 3
−−26 supply voltage (red domain); note 3
21 supply voltage (red domain); note 3
2000 Feb 22 4
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL;
TZA3031U
SYMBOL
TZA3031AHL TZA3031BHL TZA3031U
DIN 28 28 35 data input DINQ 29 29 36 data input inverted V
CC(R)
30 30 37 supply voltage (red domain); note 3 ALS 31 31 38 automatic laser shutdown input GND 32 32 39 ground GND −−40 ground
Notes
1. Supply voltage for the Monitor PhotoDiode (MPD) input current.
2. Supply voltage for the laser modulation outputs (LA, LAQ).
3. Supply voltage for the data inputs (DIN, DINQ), optical 1 and 0 reference level inputs (ONE, ZERO), and the bias current alarm reference level inputs (ALARMHI, ALARMLO).
handbook, full pagewidth
PIN PAD
CC(R)
ALS
GND 32
V
31
30
DINQ 29
DIN 28
CC(R)
V
27
ALARM 26
DESCRIPTION
GND 25
GND
MONIN
GND
TONE
TZERO
BGAP
V
CC(G)
GND
1 2 3 4 5 6 7 8
9
GND
TZA3031AHL
11
10
GND
CC(B)
V
12
LAQ
13 LA
14
GND
15
BIAS
16
GND
Fig.3 Pin configuration of TZA3031AHL.
24 23 22 21 20 19 18 17
MBK846
GND ZERO ONE ALARMLO V
CC(R)
V
CC(R)
ALARMHI GND
2000 Feb 22 5
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
handbook, full pagewidth
GND
MONIN
GND
TONE
TZERO
BGAP
V
CC(G)
GND
GND 32
1 2 3 4 5 6 7 8
9
GND
CC(R)
ALS
V
31
30
TZA3031BHL
11
10
GND
CC(B)
V
DINQ 29
12
LAQ
DIN 28
13 LA
TZA3031AHL; TZA3031BHL;
TZA3031U
CC(R)
ENL
V
27
14
GND
26
15
BIAS
GND 25
16
GND
24 23 22 21 20 19 18 17
MBK845
GND ZERO ONE V
CC(R)
DLOOPQ DLOOP V
CC(R)
GND
Fig.4 Pin configuration of TZA3031BHL.
FUNCTIONAL DESCRIPTION
The TZA3031AHL, TZA3031BHL and TZA3031U laser drivers accept a 155 Mbits/s STM1 Non-Return to Zero (NRZ) input data stream, and generate an output signal with sufficient current to drive a solid state Fabry Perot (FP) or Distributed FeedBack (DFB) laser. They also contain dual loop control circuitry for stabilizing the true laser optical power levels representing logic 1 and logic 0.
handbook, full pagewidth
10 k 10 k
100
The input buffers present a high impedance to the data stream on the differential inputs (pins DIN and DINQ); see Fig.5. The input signal can be at a CML level of approximately 200 mV (p-p) below the supply voltage, or at a PECL level up to 800 mV (p-p). The inputs can be configured to accept CML signals by connecting pins DIN and DINQ to V
via external 50 pull-up resistors.
CC(R)
If PECL compatibility is required, the usual Thevenin termination can be applied.
V
CC(R)
100
DINQ, DLOOPQDIN, DLOOP
GND
Fig.5 DIN/DINQ and DLOOP/DLOOPQ inputs.
2000 Feb 22 6
MGS910
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
For ECL signals (negative and referenced to ground), the inputs should be AC-coupled to the signal source. If AC-coupling is applied, a constant input signal (either LOW or HIGH) will cause the device to be in an undefined state. To avoid this, it is recommended to apply a slight offset to the input stage. The applied offset must be higher than the specified value in Chapter “Characteristics”, but much lower than the applied input voltage swing.
The RF path is fully differential and contains a differential preamplifier and a main amplifier. The main amplifier is able to operate at the large peak currents required at the output laser driver stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a guaranteed maximum modulation current of 60 mA to pins LA and LAQ (see Fig.6). The BIAS pin outputs a guaranteed maximum DC bias current of up to 90 mA for adjusting the optical laser output to a level above its light emitting threshold (see Fig.7).
handbook, halfpage
LA LAQ
TZA3031AHL; TZA3031BHL;
TZA3031U
Automatic laser control
A laser with a Monitor PhotoDiode (MPD) is required for the laser control circuit (see application diagrams Figs 18 and 19).
The MPD current is proportional to the laser emission and is applied to pin MONIN. The MPD current range is 100 to 1000 µA (p-p).Theinputbufferisoptimizedtocope with an MPD capacitance of up to 50 pF. To prevent the input buffer from oscillating if the MPD capacitance is low, thecapacitanceshouldbeincreasedtotheminimumvalue specified in Chapter “Characteristics”, by connecting a capacitor between pin MONIN and V
DC reference currents are applied to pins ONE and ZERO to set the MPD reference levels for laser HIGH and laser LOW respectively. This is adequately achieved by using resistors to connect V
to pins ONE and ZERO
CC(R)
(see Fig.8), however, current DACs can also be used.The voltages on pins ONE and ZERO are held at a constant level of 1.5 V below V
. The reference current applied
CC(R)
to pin ONE is internally multiplied by 16 and the reference current flowing into pin ZERO is internally multiplied by 4. The accuracy of the V
1.5 V voltage at pins ONE
CC(R)
and ZERO is described in Section “Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI”.
CC(G)
.
GND
TR
n
TR
ALS
Fig.6 LA and LAQ outputs.
GND
TR
BIAS
n
handbook, halfpage
TR
ALS
Fig.7 Laser driver bias current output circuit.
MGS906
MGS907
handbook, halfpage
V
CC(R)
30 k
50 µA
ONE, ZERO, ALARMLO, ALARMHI
MGS908
Fig.8 ONE, ZERO, ALARMLO and ALARMHI
inputs.
GND
2000 Feb 22 7
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
The reference current and the resistor for the optical 1 modulation current control loop is calculated using the following formulae:
1
I
ref ONE()
R
== []
ONE
×= A[]
I
------
MPD(ONE)
16
1.5
----------­I
ONE
-----------------------­I
MPD(ONE)
24
The reference current and resistor for the optical 0 bias current control loop is calculated using the following formulae:
I
ref ZERO()
R
ZERO
In these formulae, I
1
×= A[]
I
-- -
MPD(ZERO)
4
1.5
== []
-------------­I
ZERO
6
--------------------------­I
MPD(ZERO)
MPD(ONE)
and I
MPD(ZERO)
represent the MPD current during an optical 1 and an optical 0 period, respectively.
EXAMPLE A laser operates at optical output power levels of 0.3 mW
forlaserHIGHand0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this particular laser are 260 and 30 µA, respectively.
In this example, the reference current flowing into pin ONE is:
I
ref ONE()
1
× 16.25 µA==
260 10×
-----­16
6–
This current can be set usinga current source or simply by a resistor of the appropriate value connected between pin ONE and V
CC(R)
.
In this example, the resistor is:
R
ONE
1.5
-------------------------------- -
16.25 106–×
92.3 k==
In this example, the reference current at pin ZERO is:
I
ref ZERO()
1
-- ­4
30 10
6–
×× 7.5 µA==
and can be set using a resistor:
R
ZERO
1.5
--------------------------
7.5 106–×
200 k==
It should be noted that the MPD current is stabilized rather than the actual laser optical output power. Any deviations between optical output power and MPD current, known as ‘tracking errors’, cannot be corrected.
(1)
(2)
(3)
(4)
TZA3031AHL; TZA3031BHL;
TZA3031U
Designing the modulation and bias current control loop
The optical 1 and 0 current control loop time constantsare determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting a capacitor between pins TZERO and TONE.
The optical 1 modulation current control loop time constant (τ)and bandwidth (B) can be estimatedusing the following formulae:
τ
ONE
B
ONE
B
ONE
40 10
1
= Hz[]
------------------------- ­2πτ
×
------------------------------------------------------------------------------------------------­2π 40 10
12
C
+×()
TONE
ONE
η
LASER
12
× C
80 10
×= s[]
----------------------
+()× 80× 10
TONE
The optical 0 bias current control loop time constant and bandwidth can be estimated using the following formulae:
τ
ZERO
B
B
= Hz[]
ZERO
ZERO
The term η
40 10
---------------------------­2πτ
---------------------------------------------------------------------------------------------------­2π 40 10
LASER
12
C
+×()
TZERO
×= s[]
1
×
ZERO
η
LASER
12
C
+×()× 50× 10
TZERO
(dimensionless) in the above formulae is
the product of the following two terms:
•ηEO is the electro-optical efficiency which accounts for
thesteepness of the laser slope characteristic. It defines the rate at which the optical output powerincreases with modulation current, and is measured in W/A.
R is the MPD responsivity. It determines the amount of MPD current for a given value of optical output power, and is measured in A/W.
EXAMPLE A laser with an MPD has the following specifications:
PO= 1 mW, Ith= 25 mA, ηEO= 30 mW/A, R = 500 mA/W. The term I
is the required threshold current to switch on
th
the laser. If the laser operates just above the threshold level, it may be assumed that η is 50% of η
near the optical 1 level, due to the slope
EO
EO
decreasing near the threshold level.
3
×
η
LASER
Hz[]=
η
LASER
3
×
50 10
----------------------
Hz[]=
near the optical 0 level
(5)
(6)
(7)
(8)
2000 Feb 22 8
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
In this example, the resulting bandwidth for the optical 1 modulation current control loop, without an external capacitor, is:
B
ONE
The resulting bandwidth for the optical 0 bias current control loop, without an external capacitor, is:
B
ZERO
It is not necessary to add additional capacitance with this type of laser.
Control loop data pattern and bit rate dependency
The constants in equations (1) and (3) are valid when the data pattern frequently contains a sufficient number of ‘constantzeroes’and‘constantones’.A single control loop time period (τ for at least approximately 6 ns. In practice, the optical extinction ratio increases if the bit rate increases. Therefore, it is important to use the actual data patterns and bit rate of the final application circuit for adjusting the optical levels.
The laser driver peak detectors are able to track MPD output current overshoot and undershoot conditions. Unfortunately, these conditions affect the ability of the IC to correctly interpret the high and low level MPD current. In particular, the occurrence of undershoot can have a markedly adverse effect on the interpretation of the low level MPD current.
Additional bias by modulation ‘off’ current
Although during operation, the full modulation current switches between outputs LA and LAQ, a small amount of modulation current continues to flow through the inactive pin.
For example, when the laser, whose cathode is connected to LA, is in the ‘dark’ part of its operating cycle (logic 0), someof the modulation ‘off’ current flows through LA while most of the current flows through LAQ. This value I
o(mod)(off)
subtracted from the modulation current. Fortunately, the value correlates closely with the magnitude of the modulation current. Therefore, applications requiring low bias and low modulation are less affected. Figure 9 shows the modulation ‘off’ current as a function of the modulation ‘on’ current.
30 103–× 500× 103–×
--------------------------------------------------------------------­2π 40× 10
0.5 30× 103–× 500× 103–×
------------------------------------------------------------------------­2π 40× 10
ONE
12
× 80× 10
12
× 50× 10
and τ
) must contain ones and zeros
ZERO
750 Hz=
600 Hz=
is effectively added to the bias current and is
TZA3031AHL; TZA3031BHL;
TZA3031U
handbook, halfpage
3
I
o(mod)(off)
(mA)
2
1
0
0 204060
(1) Worst case operation (Tj= 125 °C, VCC= 5.5 V
and worst case parameter processes).
(2) Typical operation.
Fig.9 I
o(mod)(off)
as a function of I
I
o(mod)(on)
Monitoring the bias and modulation current
Although not recommended, the bias and modulation currentsgenerated by the laser driver can bemonitored by measuring the voltages on pins TZERO and TONE, respectively (see Fig.10). The relationship between these voltages and the corresponding currents are given as transconductance values and are specified in Chapter “Characteristics”. The voltages on pins TZERO and TONE range from 1.4 to 3.4 V. Any connection to these pins should have a very high impedance value. It is mandatory to use a CMOS buffer or an amplifier with an input impedance higher than 100 G and with an extremely low input leakage current (pA).
MGS902
(1)
(2)
(mA)
o(mod)(on)
.
2000 Feb 22 9
Philips Semiconductors Product specification
SDH/SONET STM1/OC3 laser drivers
handbook, halfpage
Automatic laser shut-down and laser slow start
TZERO, TONE
<
1 nA
<
1 nA
GND
40 pF
LINEAR VOLTAGE TO
CURRENT CONVERTER
2.4 V
MGS905
Fig.10 TZERO and TONE internal configuration.
TZA3031AHL; TZA3031BHL;
TZA3031U
Manual laser override
The automatic laser control function can be overridden by connecting voltage sources to pins TZERO and TONE to take direct control of the current sources for bias and modulation respectively. The control voltages should range from 1.4 to 3.4 V to swing the modulation current over the range 1 to 60 mA and the bias current over the range 1 to 90 mA. These current ranges are guaranteed.
Due to the tolerance range in the manufacturing process, some devices may have higher current values than those specified, as shown in Figs 12 and 13. Both figures show thattemperature changes cause a slight tilting of the linear characteristic around an input voltage of 2.4 V. Consequently, the manually controlled current level is most insensitive to temperature variations at around this value. Bias and modulation currents in excess of the specified range are not supported and should be avoided.
Currentsintoor out of pins TZERO and TONE in excess of 10 µA must be avoided to prevent damage to the circuit.
The laser modulation and bias currents can be rapidly switched off when a HIGH level (CMOS) is applied to pin ALS. This function allows the circuit to be shut-down in the event of an optical system malfunction. A 25 k pull-down resistor defaults pin ALS to the non active state (see Fig.11).
When a LOW level is applied to pin ALS, the modulation and bias currents slowly increase to the desired values at the typical time constants of τ
ONE
and τ
, respectively.
ZERO
This can be used to slow-start the laser.
MGS911
V
CC(R)
handbook, halfpage
ALS
100
100
25 k
GND
Fig.11 ALS input.
2000 Feb 22 10
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