Philips TZA1015T-N4, TZA1015T-N3 Datasheet

DATA SH EET

Product specification
Supersedes data of 1998 Sep 09
File under Integrated Circuits, IC01

1999 Aug 19

INTEGRATED CIRCUITS

TZA1015

Data amplifier and laser supply
circuit for CD and read-only optical
systems (HDALAS)

1999 Aug 19 2

Philips Semiconductors Product specification

Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)

TZA1015

FEATURES

• Six input buffer amplifiers with low-pass filtering and
virtually no offset

• Universal photodiode IC interface using internal
conversion resistors

• RFdataamplifierwith widebandwidth designed fordata
rates up to a maximum of 30×

• Programmable RFgain forCD-A/V, CD-R,CD-R/W and
CD-ROM applications

• Programmable RF bandwidth for optimal playability

• Radial error signal for fast track counting

• Programmable RF/Fast Track Count (FTC) gain for

optimal dynamic range

• Fully automatic laser control including stabilization and
on/off switch plusa separate supply for powerefficiency

• Automatic monitor diode polarity selection

• Adjustable laser bandwidth and laser switch-on current

slope using external capacitor

• Protection circuitto prevent laserdamage dueto supply
voltage dip

• Optimized interconnection between data amplifier and
Philips’ digital signal processor family (CD7, ACE and
MACE)

• Wide supply voltage range

• Wide temperature range

• Low power consumption.

GENERAL DESCRIPTION

TheTZA1015 isa dataamplifierand lasersupply circuitfor
3-beam pick-updetectors foundin awide rangeof CD and
read-only optical systems.
The device contains 6 transimpedance amplifiers to
amplify and filter the focus and radial photo diode voltage
input signals. The preamplifier forms a versatile,
programmable interface from voltage output CD
mechanisms to the Philips’ digital signal processor family.

The dynamic range of this preamplifier/processor
combination can be optimized for the LF servo and RF
data paths. The servo channel gain is set by the ADC
range of the processor. The RF data channel can be
programmed in the TZA1015 preamplifier.
The programmable RF bandwidthallows this device to be
used in CD-A/V applications or CD-R, CD-R/W and
CD-ROM applicationswith adata rate upto amaximum of
30×. The RF and LF gain can be adapted for CD-A/V,
CD-R andCD-ROM discs or CD-R/Wdiscs by meansof a
gain switch. In addition to this gain switch the RF gain is
programmable toguarantee optimal playability.In orderto
enable minimal access time the TZA1015 generates a
Fast Track Count signal which enables the decoder
(ACE or MACE) to count the number of tracks during a
track jump.

The device canaccommodate astigmatic, single Foucault
and double Foucault detectors and can be used with all
laserand N-orP-sub monitordiodes.The AutomaticLaser
Power Control(ALPC) circuit willmaintain controlover the
laser diode current. With an on-chip reference voltage
generator, a constant and stabilized output power is
ensured independent of ageing. Aseparate power supply
connection allows the internal power dissipation to be
reduced by connecting a low voltage supply.

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TZA1015T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1

1999 Aug 19 3

Philips Semiconductors Product specification

Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)

TZA1015

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

DD(RF,LF)

supply voltage 4.5 5.0 5.5 V

V

DD(L)

laser supply voltage 3 − 5.5 V

LF amplifiers

I

OS

channel matching −− 1 %FS

B

(−3dB)

−3 dB bandwidth 65 90 115 kHz

RF amplifier

B

(−3dB)

−3 dB bandwidth programmable;
GARF = open-circuit

− 10 − MHz

− 20 − MHz

− 50 − MHz

t

d(f)(RF)

RF flatness delay −− 0.4 ns

Laser supply

I

o(LASER)(min)

minimum laser output current V

DD(L)

=3V −− 100 mA

V

i(mon)

monitor input voltage

N-type monitor − 0.150 − V
P-type monitor − V

DD(RF,LF)

− 0.150 − V

Temperature range

T

oper

operating temperature 0 − 85 °C

T

stg

storage temperature −65 − +150 °C

1999 Aug 19 4

Philips Semiconductors Product specification

Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)

TZA1015

BLOCK DIAGRAM

Fig.1 Block diagram.

(1) Bandgap reference voltage.

handbook, full pagewidth

MGK356

V/I

V/I

V/I

+

+

+

−

+

+

+

+

−

+

−

+

−

+

−

+

−

+

−

+

LD

V

DD(L)

CFIL

V

DD(LF)

V

DD(LF)

V

ref

RFN

RFP

V

DD(RF)

O1

O2

O3

O4

O5

O6

GND PWRON

FTC

2

3

4

12

26

25

2423

22

21

20

19

18

17

16

15

14

TZA1015

V

GAP

RFBWS

MON

D1

D2

D3

D4

S5

S6

V

COM

GARF

GSE

1

5

6

7

8

9

10

11

13

28
27

(1)

1999 Aug 19 5

Philips Semiconductors Product specification

Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)

TZA1015

PINNING

SYMBOL PIN DESCRIPTION

RFBWS 1 RF amplifier bandwidth select
LD 2 current output to the laser diode
V

DD(L)

3 laser supply voltage
CFIL 4 external filter capacitor
MON 5 laser monitor diode input
D1 6 input photo diode amplifier 1 (central)
D2 7 input photo diode amplifier 2 (central)
D3 8 input photo diode amplifier 3 (central)
D4 9 input photo diode amplifier 4 (central)
S5 10 input photo diode amplifier 5

(satellite)

S6 11 input photo diode amplifier 6

(satellite)

V

DD(LF)

12 LF diode and FTC amplifier supply

voltage

V

COM

13 common mode DC reference input

V

ref

14 DC reference voltage for biasing of

Opto Electronic IC (OEIC)
FTC 15 fast track count amplifier output
PWRON 16 power on/off switch (V

ref

bias

generator always active)
O6 17 output photo diode amplifier 6
O5 18 output photo diode amplifier 5
O4 19 output photo diode amplifier 4
O3 20 output photo diode amplifier 3
O2 21 output photo diode amplifier 2
O1 22 output photo diode amplifier 1
V

DD(RF)

23 RF amplifier supply voltage
GND 24 ground
RFP 25 positive output RF data amplifier
RFN 26 negative output RF data amplifier
GSE 27 gain select for CD, CD-R, CD-R/W;

RF and FTC amplifiers

GARF 28 gain adjust for RF and FTC amplifiers

Fig.2 Pin configuration.

handbook, halfpage

RFBWS

LD

V

DD(L)

CFIL

MON

D1
D2
D3
D4

S5
S6

V

DD(LF)

V

COM

V

ref

GARF
GSE
RFN
RFP

V

DD(RF)

O1
O2
O3
O4
O5
O6

GND

PWRON
FTC

1
2
3
4
5
6
7
8

9
10
11
12
13

28
27
26
25
24
23
22
21
20
19
18
17
16
1514

TZA1015

MGK355

1999 Aug 19 6

Philips Semiconductors Product specification

Data amplifier and laser supply circuit for CD
and read-only optical systems (HDALAS)

TZA1015

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Based on standard measurement for determining thermal resistance of the package. In accordance with
MIL-STD 883C.

CHARACTERISTICS

V

DD(LF)=VDD(RF)=VDD(L)

= 5.0 V; T

amb

=25°C; PWRON = HIGH; GSE = LOW; GARF = open-circuit;

RFBWS = HIGH; DC input voltagesat pins V

COM

, D1 to D4, S5 and S6 =1⁄2VDD; output voltageat pins O1 to O6 = 0 V;

I

DD(L)(d)

= 50 mA; C

CFIL

= 1 nF; unless otherwise specified. Diode input voltages all with respect to V

COM

.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DD(RF,LF)

supply voltage −0.5 +5.5 V

V

I(n)

input voltage for all pins −0.5 V

DD(RF,LF)

+ 0.5 V

I

source

source current

pin FTC − 4mA
pin RFP − 2mA
pin RFN − 2mA

T

amb

operating ambient temperature −40 +100 °C

P

max

maximum power dissipation note 1 − 700 mW

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

DD(RF,LF)

supply voltage 4.5 5.0 5.5 V

V

DD(L)

laser supply
voltage

3 − 5.5 V

I

DD(LF)

LF supply current − 13 − mA

I

DD(RF)

RF supply current − 20 − mA

I

DD(L)(d)

laser diode supply
current

− 50 100 mA

I

q

quiescent supply
current

PWRON = LOW −− 6mA

Input voltages

V

i(D1-D4,S5,S6)

inputsignal voltage
range(with respect
to V

COM

)

all inputs;
GSE = LOW

0 − 0.6 V

all inputs;
GSE = HIGH

0 − 0.15 V

V

I(CM)

common mode DC
reference input
voltage range

1.6 − V

DD(RF,LF)

− 2.2 V