Philips TEA5767HN, X7, X5 DATA SHEET

INTEGRATED CIRCUITS

DATA SH EET

TEA5767HN

Low-power FM stereo radio for
handheld applications

Preliminary specification 2002 Mar 12

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

FEATURES

• High sensitivity due to integrated low-noise RF input
amplifier

• FM mixer for conversion of the US/Europe
(87.5 to 108 MHz) and Japanese FM band
(76 to 91MHz) to IF

• Preset tuning to receive Japanese TV audio up to
108 MHz

• RF Automatic Gain Control (AGC) circuit

• LC tuner oscillator operating with low cost fixed chip

inductors

• FM IF selectivity completely done internal

• No externaldiscriminatorneeded due to fully integrated

FM demodulator

• Crystal reference frequency oscillator; the oscillator
operates with a 32.768 kHz clock crystal or with a
13 MHz crystal and with an externally applied 6.5 MHz
reference frequency

• PLL synthesizer tuning system

• 7-bit IF counter output via bus

• 4-bit level information output via bus

• Soft mute

• Signal dependent mono/stereo blend [Stereo Noise

Cancelling (SNC)]

• Signal dependent High Cut Control (HCC)

• Soft mute, SNC and HCC can be switched off via bus

• Adjustment-free stereo decoder

• I2C-bus and 3-wire bus, selectable via pin BUSMODE

• Autonomous search tuning function

• Standby mode

• Two software programmable ports

• Bus enable line to switch bus input and output lines into

3-state mode

• Automotive temperature range (at V
and V

CCD

= 5 V).

CCA

, V

CC(VCO)

GENERAL DESCRIPTION

The TEA5767HN is a single-chip electronically tuned FM
stereoradiofor low-voltage application withfullyintegrated
IF selectivity and demodulation. The radio is completely
adjustment-free and does only requirea minimumof small
and low cost externalcomponents. The radio can tune the
European, US and Japan FM bands.

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TEA5767HN HVQFN40 plastic, heatsink very thin quad flat package; no leads; 40 terminals;

body 6 × 6 × 0.85 mm

2002 Mar 12 2

SOT618-1

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

QUICK REFERENCE DATA

V

CCA=VCC(VCO)=VCCD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CCA

V

CC(VCO)

analog supply voltage 2.5 3.0 5.0 V
voltage controlled oscillator

supply voltage

V

CCD

I

CCA

I

CC(VCO)

digital supply voltage 2.5 3.0 5.0 V
analog supply current operational; V

voltage controlled oscillator
supply current

I

CCD

f

FM(ant)

T

amb

digital supply current operational; V

FM input frequency 76 − 108 MHz
ambient temperature V

FM overall system parameters; see Fig.7
V

S
S

RF

−200
+200

RF sensitivity input voltage fRF= 76 to 108 MHz; ∆f = 22.5 kHz;

LOW side 200 kHz selectivity ∆f=−200 kHz; fRF= 76 to 108 MHz; note 1 32 36 − dB
HIGH side 200 kHz

selectivity

V

AFL

; V

left and right audio frequency

AFR

output voltage

(S+N)/N maximum signal plus

noise-to-noise ratio

α

cs(stereo)

stereo channel separation VRF= 1 mV; R=L=0 or R=0 and L = 1

THD total harmonic distortion VRF= 1 mV;L = R; ∆f = 75 kHz;f

.

2.5 3.0 5.0 V

= 3 V 6.0 8.4 10.5 mA

CCA

standby mode; V
operational; V

VCOTANK1=VVCOTANK2

standby mode; V

CCD

standby mode; V

=3V − 36 µA

CCA

= 3 V 560 750 940 µA

VCOTANK1=VVCOTANK2

=3V − 12 µA

= 3 V 2.1 3.0 3.9 mA

=3V

CCD

bus enable line HIGH 30 56 80 µA
bus enable line LOW 11 19 26 µA

CCA=VCC(VCO)=VCCD

V

CCA=VCC(VCO)=VCCD

= 2.5 V −10 − +75 °C
=5V −40 − +85 °C

− 2 3.5 µV

f

= 1 kHz; (S+N)/N = 26 dB;

mod

de-emphasis = 75 µs; L = R;
BAF = 300 Hz to 15 kHz

∆f = +200 kHz; fRF= 76 to 108 MHz; note 1 39 43 − dB

VRF= 1 mV; L = R; ∆f = 22.5 kHz;
f

= 1 kHz; de-emphasis = 75 µs

mod

VRF= 1 mV; L = R; ∆f = 22.5 kHz;
f

= 1 kHz; de-emphasis = 75 µs;

mod

60 75 90 mV

54 60 − dB

BAF = 300 Hz to 15 kHz

24 30 − dB

including 9% pilot; ∆f = 75 kHz; f

mod

= 1 kHz;

data byte 3: bit 3 = 0; data byte 4: bit 1 = 1

mod

= 1 kHz;

− 0.4 1 %

de-emphasis = 75 µs

Note

1. LOWside and HIGH side selectivitycan be switchedby changing themixer from HIGHside to LOWside LO injection.

2002 Mar 12 3

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

BLOCK DIAGRAM

CCA

V

32.768 kHz

or

(1)

pull

C

16

CRYSTAL

OSCILLATOR

13 MHz

10 kΩ

10 kΩ

15

14

pilot

PORT

SOFTWARE

PROGRAMMABLE

MUX

BUSENABLE

BUSMODE

WRITE/READ

13

12

11

mono

C-BUS

2

I

3-WIRE BUS

10

n.c.

CLOCK

22 nF

7

DATA

12 Ω

n.c

AFL

V

AFR

V

MPXO

33

47

33 nF

nFnF

22 nF

(1)

comp

22 nF

18

33 kΩ

C

17

n.c.

1 nF

20

21

19
22
2324252628

SDS

MPX

DECODER

SOFT

MUTE

ref

POWER

SUPPLY

I

27

TEA5767HN

DEMODULATOR

IF COUNTER

n.c

47 nF

47 nF

CCD

V

Fig.1 Block diagram.

29

LIMITER

GAIN

AMPLIFIER

STABILISATOR

RESONANCE

30

31

32

n.c.

33

R1

34

22 µF

22 nF

4.7 Ω

CCA

V

ADC

LEVEL

: 2

1st FM

I/Q-MIXER

FM antenna

ADJUST

IF CENTRE

FREQUENCY

N1

35

27 pF

100 pF

programmable divider output

reference frequency divider output

22 nF

AGC

TUNING SYSTEM

37

36

38

39

4.7 nF

47 pF

L1

VCO

2345689
1

40

n.c.

39 nF

n.c.

10

10 nF

D1 D2

L3 L2

100

kΩ

kΩ

47 Ω

data depends on crystal specification.

pull

CC(VCO)

and C

V

comp

(1) C

2002 Mar 12 4

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Table 1 Component list for Figs 1 and 7

COMPONENT PARAMETER VALUE TOLERANCE TYPE MANUFACTURER

R1 resistor with low temperature coefficient 18 kΩ±1% RC12G Philips
D1 and D2 varicap for VCO tuning −−BB202 Philips
L1 RF band filter coil 120 nH ±2% Q
L2 and L3 VCO coil 33 nH ±2% Q
XTAL13 13 MHz crystal −−NX4025GA
C

pull

pulling capacitor for NX4025GA 10 pF −

XTAL32.768 32.768 kHz crystal −−

PINNING

SYMBOL PIN DESCRIPTION

n.c. 1 not connected
CPOUT 2 charge pump output of synthesizer PLL
VCOTANK1 3 voltage controlled oscillator tuned circuit output 1
VCOTANK2 4 voltage controlled oscillator tuned circuit output 2
V

CC(VCO)

5 voltage controlled oscillator supply voltage
DGND 6 digital ground
V

CCD

7 digital supply voltage
DATA 8 bus data line input/output
CLOCK 9 bus-clock line input
n.c. 10 not connected
WRITE/READ 11 write/read control input for the 3-wire bus
BUSMODE 12 bus mode select input
BUSENABLE 13 bus enable input
SWPORT1 14 software programmable port 1
SWPORT2 15 software programmable port 2
XTAL1 16 crystal oscillator input1
XTAL2 17 crystal oscillator input2
PHASEFIL 18 phase detector loop filter
PILFIL 19 pilot detector low-pass filter
n.c. 20 not connected
n.c. 21 not connected
V
V

AFL
AFR

22 left audio frequency output voltage

23 right audio frequency output voltage
TMUTE 24 time constant for soft mute
MPXO 25 FM demodulator MPX signal output
V

ref

26 reference voltage
TIFC 27 time constant for IF centre adjust
LIMDEC1 28 decoupling IF limiter 1
LIMDEC2 29 decoupling IF limiter 2

min
min

=40
=40

2002 Mar 12 5

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PIN DESCRIPTION

n.c. 30 not connected
n.c. 31 not connected
I

gain

AGND 33 analog ground
V

CCA

RFI1 35 RF input 1
RFGND 36 RF ground
RFI2 37 RF input 2
TAGC 38 time constant RF AGC
LOOPSW 39 switch output of synthesizer PLL loop filter
n.c. 40 not connected

32 gain control current for IF filter

34 analog supply voltage

n.c.

CLOCK

DATA

V

CCD

DGND

V

CC(VCO)

VCOTANK2
VCOTANK1

CPOUT

n.c.

XTAL2

SWPORT2

XTAL1

SWPORT1

10

9
8
7
6
5
4
3
2
1

BUSMODE

BUSENABLE

WRITE/READ

13

12

11

TEA5767HN

38

39

40

n.c.

TAGC

LOOPSW

37

RFI2

161418

15

36

35

RFI1

RFGND

17

34

CCA

V

n.c.

PILFIL

PHASEFIL

20

19

31

33

32

n.c.

gain

I

AGND

21
22
23
24
25
26
27
28
29
30

MXXxxx

Fig.2 Pin configuration (bottom view).

n.c.
V

AFL

V

AFR

TMUTE
MPXO
V

ref

TIFC
LIMDEC1
LIMDEC2
n.c.

2002 Mar 12 6

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

FUNCTIONAL DESCRIPTION
Low-noise RF amplifier

The LNA input impedance together with the LC RF input
circuit defines an FM band filter. The gain of the LNA is
controlled by the RF AGC circuit.

FM mixer

FM quadrature mixer converts FM RF (76 to 108 MHz) to
an IF of 225 kHz.

VCO

The varactor tuned LC VCO provides the Local Oscillator
(LO) signal for the FM quadrature mixer. The VCO
frequency range is 150 to 217 MHz.

Crystal oscillator

The crystal oscillator can operate with a 32.768 kHz clock
crystal or a 13 MHz crystal. The temperature drift of
standard 32.768 kHz clock crystals limits the operational
temperature range from −10 to +60 °C.

Via pin XTAL2 the PLL synthesizer can be clocked
externally with a 32.768 kHz, a 6.5 MHz or a 13 MHz
signal.

The crystal oscillator generates the reference frequency
for

• The reference frequency divider for synthesizer PLL

• The timing for the IF counter

• The free-running frequencyadjust of the stereo decoder

VCO

• The centre frequency adjust of the IF filters.

PLL tuning system

The PLL synthesizer tuning system is suitable to operate
with a 32.768 kHz or a 13 MHz reference frequency
generated by the crystal oscillator or fed into the IC. The
synthesizer can also be clocked via pin XTAL2 with

6.5 MHz. The PLL tuning system can perform an
autonomous search tuning function.

FM demodulator

The FM quadrature demodulator has an integrated
resonator to perform the phase shift of the IF signal.

Level voltage generator and analog-to-digital
converter

The level voltage is analog-to-digital converted with 4 bits
and output via the bus.

IF counter

The IF counter outputs a 7-bit count result via the bus.

Soft mute

The low-pass filtered level voltage drives the soft mute
attenuator at low RF input levels. The soft mute function
can also be switched off via bus.

MPX decoder

The PLL stereo decoder is adjustment-free. The stereo
decoder can be switched to mono via bus.

Signal dependent mono/stereo blend

With decreasing RF input level the MPX decoder blends
from stereo to mono to limit the output noise. The
continuous mono-to-stereo blend can also be
programmed by bus to an RF level depending switched
mono-to-stereo transition. Stereo Noise Cancelling (SNC)
can be switched off via bus.

Signal dependent AF response

With decreasing RF input level the audio bandwidth is
reduced. The function can also be switched off via bus.

Software programmable ports

Two software programmableports (open-collector) canbe
addressed via bus.

With write data byte 4 bit 0 the port 1 (pin SWPORT1)
functioncanbe changed (see Table 14).Pin SWPORT1is
then output for the ready flag of read byte 1.

RF AGC

The RF AGC prevents overloading and limits the amount
of intermodulation products created by strong adjacent
channels.

IF filter

Fully integrated IF filter.

2002 Mar 12 7

2

C-bus and 3-wire bus

I

The 3-wire bus operates with a maximum clock frequency
of 1 MHz.

The I2C-bus operates with a maximum clock frequency of
400 kHz.

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

With BUSMODE pin LOW the I2C-bus mode is selected,
withBUSMODE pinHIGH the 3-wirebus mode isselected.

2

C-BUS, 3-WIRE BUS AND BUS CONTROLLED

I
FUNCTIONS

2

C-bus specification

I

Informationaboutthe I2C-buscanbe found inthebrochure

“The I2C-bus and how to use it”

(order number

9398 393 40011).

2

The standard I

C-bus specification is expanded by the

following definitions.
IC address C0: 1100000.
Structure of the I2C-bus logic: slave transceiver.
Subaddresses are not used.
The maximum LOW-level input and the minimum

HIGH-level input are specified to 0.2V

0.45V

CCD

.

respectively

CCD

The pin BUSMODE must be connected to ground to
operate the IC with the I2C-bus.

Hint: The bus operates at a maximum clock frequency of
400 kHz. It is not allowed to connect the IC to a bus
operating at a higher clock rate.

DATA TRANSFER FOR THE TEA5767HN
Data sequence: address, byte 1, byte 2, byte 3, byte 4,

and byte 5. The data transfer has to be in this order. The
LSB = 0of the addressindicates a WRITEoperationto the
TEA5767HN.

Bit 7 of each byte is considered the MSB and has to be
transferred as the first bit of the byte.

The data becomes valid bitwise at the appropriate falling
edge of the clock. A STOP condition after any byte can
shorten transmission times.

When writing to the transceiver by using the STOP
condition before completion of the whole transfer:

• The remaining bytes will contain the old information

• Ifthe transferof a byteis not completed,the new bitswill

be used, but a new tuning cycle will not be started.

Withthe standby bittheIC can beswitched in alowcurrent
standby mode. The bus is then still active. The standby
currentcan be reducedbydeactivation of thebusinterface
(pin BUSENABLE LOW). Is the bus interface deactivated
(pin BUSENABLE LOW) without programmed standby
mode, the IC keeps its normal operation, but is isolated
from the bus lines.

The software programmable output (SWPORT1) can be
programmed to operateas tuning indicator output. Aslong
as the IC has not completed a tuning action, the
SWPORT1 pin is LOW. The pin becomes HIGH, when a
preset or search tuning was completed or when a band
limit was reached.

With the MSB in byte 5 set to logic 1 the reference
frequency divider of the synthesizer PLL is changed. The
tuning system can then be clocked via pin XTAL2 with

6.5 MHz.

P

OWER-ON RESET

The mute is set, all other bits are set to LOW. To initialize
the IC all bytes have to be transferred.

2

C-bus protocol

I
Table 2 Write mode

(1)

S

address (write) A

Table 3 Read mode

(1)

S

address (read) A

Notes to Tables 2 and 3

1. S = START condition.

2. A = acknowledge.

3. P = STOP condition.

2002 Mar 12 8

(2)

(2)

data byte(s) A

data byte 1

(2)

(3)

P

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Table 4 IC address byte

IC ADDRESS MODE

1100000R/W

Note

1. Read or write mode:
a) 0 = write operation to TEA5767HN
b) 1 = read operation from TEA5767HN.

(1)

3-wire bus specification

3-wire bus with write/read, clock and data line.
Thebus operatesat a maximumclock frequency of1 MHz.
Hint: With the standby bit the IC can be switched in a low

current standby mode. The bus is then still active. The
standby current can bereduced by deactivation of the bus
interface (pin BUSENABLE LOW). Is the bus interface
deactivated(pin BUSENABLE LOW) withoutprogrammed
standby mode, the IC keeps its normal operation, but is
isolated from the clock and data line.

DATA TRANSFER FOR THE TEA5767HN
Data sequence: byte 1, byte 2, byte 3, byte 4, and byte 5.

The data transfer has to be in this order.
A positive edge at pin WRITE/READ enables the data

transfer into the IC. Data have to be stable at the positive
edge of the clock. Data may change while clock is LOW
andis written withthepositive edge ofthe clock intotheIC.
Data transfer can be stopped after the transmission of a
newtuning information withthe first twobytesor after each
following byte.

A negative edge at pin WRITE/READ enables the data
transfer out of the IC. The WRITE/READ pin changes
while the clock is LOW. With the negative edge of
pin WRITE/READ the MSB of the first byte occurs at
pin DATA. The bits are shifted with the negative clock
edge to pin DATA and can be read with the positive edge.

To do two consecutive read or write actions,
pin WRITE/READ has to be toggled for at least one clock
period. Was a search tuning request sent, the IC
autonomously starts searching the FM band. Search
direction and search stop level can be chosen. Was a
stationwitha field-strength equaltoorhigher than this stop
level found, the tuning system stops and the ready flag bit
is set to HIGH. Was during search a band limit reached,
thetuning systemstops at theband limit and the bandlimit
flag bit is set to HIGH. Alsothe ready flag is set to HIGH in
this case.

The software programmable output (SWPORT1) can be
programmed to operate as a tuning indicator output. As
long as the IC has not completed a tuning action
pin SWPORT1 is LOW. The pin becomes HIGH, when a
preset or search tuning was completed or when a band
limit was reached.With the MSBin byte 5set to logic 1the
reference frequency divider of the synthesizer PLL is
changed. The tuning system can then be clocked via
pin XTAL2 with 6.5 MHz.

POWER-ON RESET
The mute is set, all other bits are random. To initialize the

IC all bytes have to be transferred.

2002 Mar 12 9

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Writing data

t

W(write)tW(write)

WRITE/READ

CLOCK

DATA

50%

t

su(clk)

50%

t

su(write)

50%

50%

valid
data

t

h(write)

Fig.3 3-wire bus write data.

Table 5 Write mode

DATA BYTE 1 DATA BYTE 2 DATA BYTE 3 DATA BYTE 4 DATA BYTE 5

Table 6 Format of 1st data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

MUTE SM PLL13 PLL12 PLL11 PLL10 PLL9 PLL8

Table 7 Description of 1st data byte bits

BIT SYMBOL DESCRIPTION

7 MUTE If MUTE = 1, then L and R audio muted. If MUTE = 0, then audio not muted.
6SMSearch Mode. If SM = 1, then search mode. If SM = 0, then no search mode.

5 to 0 PLL[13:8] Setting of synthesizer programmable counter for search or preset.

Table 8 Format of 2nd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

PLL7 PLL6 PLL5 PLL4 PLL3 PLL2 PLL1 PLL0

Table 9 Description of 2nd data byte bits

BIT SYMBOL DESCRIPTION

7 to 0 PLL[7:0] Setting of synthesizer programmable counter for search or preset.

Table 10 Format of 3rd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

SUD SSL1 SSL0 HLSI MS ML MR SWP1

2002 Mar 12 10

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Table 11 Description of 3rd data byte bits

BIT SYMBOL DESCRIPTION

7 SUD Search up/down. If SUD = 1, then search up. If SUD = 0, then search down.

6 and 5 SSL[1:0] Search Stop Level. See Table 12.

4 HLSI HIGH/LOW Side Injection. If HLSI = 1, then HIGH side LO injection. If HLSI = 0, then

LOW side LO injection.
3MSMono/Stereo. If MS = 1, then forced mono. If MS= 0, then stereo ON.
2MLMuteLeft. If ML = 1, then left audio channel mutedand forcedmono. If ML = 0, then not

muted.
1MRMute Right. If MR = 1, then right audio channel muted and forced mono.If MR = 0, then

not muted.
0 SWP1 Software programmable port 1. If SWP1 = 1, then port 1 is HIGH. If SWP1 = 0, then

port 1 is LOW.

Table 12 Search stop level setting

SSL1 SSL0 SEARCH STOP LEVEL

0 0 not allowed in search mode
0 1 low; level ADC output = 5
1 0 mid; level ADC output = 7
1 1 high; level ADC output = 10

Table 13 Format of 4th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

SWP2 STBY BL XTAL SMUTE HCC SNC SI

Table 14 Description of 4th data byte bits

BIT SYMBOL DESCRIPTION

7 SWP2 Software programmable port 2. If SWP2 = 1, then port 2 is HIGH. If SWP2 = 0, then

port 2 is LOW.
6 STBY Standby. If STBY = 1, then standby. If STBY = 0, then no standby.
5BLBand Limits. If BL = 1, then Japan FM band. If BL = 0, then US/Europe FM band.
4 XTAL If XTAL = 1, then f
3 SMUTE Soft Mute. If SMUTE = 1, then soft mute is ON. If SMUTE = 0, then soft mute is OFF.
2 HCC High Cut Control. If HCC = 1, then high cut control is ON. If HCC = 0, then high cut

control is OFF.
1 SNC Stereo noise cancelling. If SNC = 1, then stereo noise cancelling is ON. If SNC = 0,

then stereo noise cancelling is OFF.
0SISearch indicator. If SI = 1, then pin SWPORT1 is output for the ‘ready flag’. If SI = 0,

then pin SWPORT1 is software programmable port 1.

= 32.768 kHz. If XTAL = 0, then f

xtal

= 13 MHz.

xtal

Table 15 Format of 5th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

PLLREF DTC −−−−−−

2002 Mar 12 11

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Table 16 Description of 5th data byte bits

BIT SYMBOL DESCRIPTION

7 PLLREF If PLLREF = 1, then 6.5 MHz reference for PLL enabled. If PLLREF = 0, then not

enabled.
6 DTC If DTC = 1, then de-emphasis timeconstant is 75 µs. If DTC = 0, then de-emphasis time

constant is 50 µs.

5to0 − Not used; position don’t care.

Reading data

WRITE/READ

CLOCK

DATA

t

W(read)

50%

t

su(clk)

50%

50%

t

LOW

t

h(out)

t

HIGH

50%

t

d(out)

50%

Fig.4 3-wire bus read data.

Table 17 Read mode

DATA BYTE 1 DATA BYTE 2 DATA BYTE 3 DATA BYTE 4 DATA BYTE 5

Table 18 Format of 1st data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

RF BLF PLL13 PLL12 PLL11 PLL10 PLL9 PLL8

Table 19 Description of 1st data byte bits

BIT SYMBOL DESCRIPTION

7RFReady Flag. If RF = 1, then a station has been found or the band limit has been

reached. If RF = 0, then no station has been found.
6 BLF Band Limit Flag. If BLF = 1, then the band limit has been reached. If BLF = 0, then the

band limit has not been reached.

5 to 0 PLL[13:8] Setting of synthesizer programmable counter after search or preset.

2002 Mar 12 12

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Table 20 Format of 2nd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

PLL7 PLL6 PLL5 PLL4 PLL3 PLL2 PLL1 PLL0

Table 21 Description of 2nd data byte bits

BIT SYMBOL DESCRIPTION

7 to 0 PLL[7:0] Setting of synthesizer programmable counter after search or preset.

Table 22 Format of 3rd data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

STEREO IF6 IF5 IF4 IF3 IF2 IF1 IF0

Table 23 Description of 3rd data byte bits

BIT SYMBOL DESCRIPTION

7 STEREO Stereo indication. If STEREO = 1, then stereo reception. If STEREO = 0, then mono

reception.

6 to 0 PLL[13:8] IF counter result.

Table 24 Format of 4th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

LEV3 LEV2 LEV1 LEV0 CI3 CI2 CI1 0

Table 25 Description of 4th data byte bits

BIT SYMBOL DESCRIPTION

7 to 4 LEV[3:0] Level ADC output.
3 to 1 CI[3:1] Chip Identification. These bits have to be set to logic 0.

0 − This bit is internally set to logic 0.

Table 26 Format of 5th data byte

BIT 7 (MSB) BIT 6 BIT 5 BIT 4 BIT 3 BIT 2 BIT 1 BIT 0 (LSB)

00000000

Table 27 Description of 5th data byte bits

BIT SYMBOL DESCRIPTION

7to0 − Reserved for future extensions; these bits are internally set to logic 0.

2002 Mar 12 13

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Bus timing
Table 28 Digital levels and timing

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Digital inputs

V

IH

V

IL

Digital outputs

I

sink(L)

V

OL

Timing

f

clk

t

HIGH

t

LOW

t

W(write)

t

W(read)

t

su(clk)

t

h(out)

t

d(out)

t

su(write)

t

h(write)

HIGH-level input voltage 0.45V

CCD

LOW-level input voltage − 0.2V

− V

CCD

V

LOW-level sink current 500 −µA
LOW-level output voltage IOL= 500 µA − 450 mV

clock input I2C-bus enabled − 400 kHz

3-wire bus enabled − 1 MHz

clock HIGH time I2C-bus enabled 1 −µs

3-wire bus enabled 300 − ns

clock LOW time I2C-bus enabled 1 −µs

3-wire bus enabled 300 − ns
pulse width for write enable 3-wire bus enabled 1 −µs
pulse width for read enable 3-wire bus enabled 1 −µs
clock set-up time 3-wire bus enabled 300 − ns
read mode data output hold time 3-wire bus enabled 10 − ns
read mode output delay time 3-wire bus enabled − 100 ns
write mode set-up time 3-wire bus enabled 100 − ns
write mode hold time 3-wire bus enabled 100 − ns

2002 Mar 12 14

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

VCOTANK1

V

VCOTANK2

V

CCD

V

CCA

T

stg

T

amb

V

es

VCO tuned circuit output voltage 1 −0.3 +8 V
VCO tuned circuit output voltage 2 −0.3 +8 V
digital supply voltage −0.3 +5 V
analog supply voltage −0.3 +8 V
storage temperature −55 +150 °C
ambient temperature −40 +85 °C
electrostatic handling voltage

for all pins except pin DATA note 1 −200 +200 V

note 2 −2000 +2000 V

for pin DATA note 1 −150 +200 V

note 2 −2000 +2000 V

Notes

1. Machine model (R = 0 Ω, C = 200 pF).

2. Human body model (R = 1.5 kΩ, C = 100 pF).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 80 K/W

2002 Mar 12 15

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

DC CHARACTERISTICS

V

CCA=VVCOTANK1=VVCOTANK2=VCCD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply voltage

IN V

P

CCA

V

CCA

analog supply voltage 2.5 3.0 5.0 V
PINS VCOTANK1 AND VCOTANK2
V

CC(VCO)

voltage controlled

oscillator supply voltage
PIN V

CCD

V

CCD

digital supply voltage 2.5 3.0 5.0 V

Supply current

P

IN V

CCA

I

CCA

analog supply current operational

PINS VCOTANK1 AND VCOTANK2
I

CC(VCO)

voltage controlled

oscillator supply current

PIN V

CCD

I

CCD

digital supply current operational

= 2.7 V; T

=25°C; unless otherwise specified.

amb

2.5 3.0 5.0 V

V

= 3 V 6.0 8.4 10.5 mA

CCA

V

= 5 V 6.2 8.6 10.7 mA

CCA

standby mode

V

=3V − 36 µA

CCA

V

=5V − 3.2 6.2 µA

CCA

operational

V

VCOTANK1=VVCOTANK2

V

VCOTANK1=VVCOTANK2

= 3 V 560 750 940 µA
= 5 V 570 760 950 µA

standby mode

V

VCOTANK1=VVCOTANK2

V

VCOTANK1=VVCOTANK2

V

= 3 V 2.1 3.0 3.9 mA

CCD

V

= 5 V 2.25 3.15 4.05 mA

CCD

standby mode; V

CCD

=3V − 12 µA
=5V − 1.2 2.2 µA

=3V
bus enable line HIGH 30 56 80 µA
bus enable line LOW 11 19 26 µA

standby mode; V

CCD

=5V
bus enable line HIGH 50 78 105 µA
bus enable line LOW 20 33 45 µA

2002 Mar 12 16

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DC operating points

V

CPOUT

V

XTAL1

V

XTAL2

V

PHASEFIL

V

PILFIL

V

VAFL

V

VAFR

V

TMUTE

V

MPXO

V

Vref

V

TIFC

V

LIMDEC1

V

LIMDEC2

V

Igain

V

RFI1

V

RFI2

V

TAGC

unloaded DC voltage 0.1 − V

data byte 4: bit4=1 1.64 1.72 1.8 V
data byte 4: bit4=0 1.68 1.75 1.82 V
data byte 4: bit4=1 1.64 1.72 1.8 V
data byte 4: bit4=0 1.68 1.75 1.82 V

0.4 1.2 V

0.65 0.9 1.3 V
fRF= 98 MHz; VRF= 1 mV 720 850 940 mV
fRF= 98 MHz; VRF= 1 mV 720 850 940 mV
VRF= 0 V 1.5 1.65 1.8 V
fRF= 98 MHz; VRF= 1 mV 680 815 950 mV

1.45 1.55 1.65 V

1.34 1.44 1.54 V

1.86 1.98 2.1 V

1.86 1.98 2.1 V

480 530 580 mV

0.93 1.03 1.13 V

0.93 1.03 1.13 V
VRF= 0 V 1 1.57 2 V

CC(VCO)

− 0.4 V

CCA

− 0.1 V

2002 Mar 12 17

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

AC CHARACTERISTICS

V

CCA=VVCOTANK1=VVCOTANK2=VCCD

otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Voltage controlled oscillator

f

osc

oscillator frequency 150 − 217 MHz

Crystal oscillator

CIRCUIT INPUT: PIN XTAL2
V

R

C

i(osc)

i

i

oscillator input voltage oscillator externally clocked 140 − 350 mV
input resistance oscillator externally clocked

input capacitance oscillator externally clocked

CRYSTAL: 32.768 kHz
f

r

∆f/f
C

0

R

S

∆fr/f

r

r(25 °C)

series resonance frequency data byte 4: bit 4 = 1 − 32.768 − kHz
frequency deviation −20 × 10−6− +20 × 10
shunt capacitance −−3.5 pF
series resistance −−80 kΩ

temperature drift −10 °C<T
CRYSTAL:13MHz
f

r

∆f/f
C

0

C

mot

R

S

∆fr/f

r

r(25 °C)

series resonance frequency data byte 4: bit 4 = 0 − 13 − MHz

frequency deviation −30 × 10−6− +30 × 10

shunt capacitance −−4.5 pF

motional capacitance 1.5 − 3.0 fF

series resistance −−100 Ω

temperature drift −40 °C<T

Synthesizer

= 2.7 V; T

=25°C; see Fig.7; all AC values are given in RMS; unless

amb

with 13 MHz 2 3 4 kΩ
with 32.768 kHz 230 330 430 kΩ

with 13 MHz 3.9 5.6 7.3 pF
with 32.768 kHz 5 6 7 pF

< +60 °C −50 × 10−6− +50 × 10

amb

< +85 °C −30 × 10−6− +30 × 10

amb

−6

−6

−6

−6

PROGRAMMABLE DIVIDER
N

prog

programmable divider ratio data byte 1 = XX111111;

data byte 2 = 11111111
data byte 1 = XX001000;

data byte 2 = 00000000

∆N

step

programmable divider step

size
REFERENCE FREQUENCY DIVIDER
N

ref

crystal oscillator divider

ratio

data byte 4: bit 4 = 0 − 260 −
data byte 5: bit 7 = 1;

data byte 4: bit 4 = 0
data byte 4: bit 4 = 1 − 1 −

2002 Mar 12 18

−−8191

2048 −−

− 1 −

− 130 −

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

CHARGE PUMP: PIN CPOUT
I

sink

I

source

IF counter

V

RF

N

IF

N

precount

T

count(IF)

RES

count(IF)

IF

count

Pins DATA, CLOCK, WRITE/READ, BUSMODE and BUSENABLE

R

i

Software programmable ports

charge pump peak sink

current

charge pump peak source

current

RF input voltage for correct

0.2V<V
<V

VCOTANK2

f

VCO>fref

0.2V<V
<V

VCOTANK2

f

VCO<fref

CPOUT

− 0.2 V;

× N

CPOUT

− 0.2 V;

× N

− 0.5 −µA

prog

−−0.5 −µA

prog

− 12 18 µV

IF count

IF counter length − 7 − bit

IF counter prescaler ratio − 64 −

IF counter period f

IF counter resolution f

IF counter result for search

tuning stop

= 32.768 kHz − 15.625 − ms

xtal

f

= 13 MHz − 15.754 − ms

xtal

= 32.768 kHz − 4.096 − kHz

xtal

f

= 13 MHz − 4.0625 − kHz

xtal

f

= 32.768 kHz 31 − 3E HEX

xtal

f

= 13 MHz 32 − 3D HEX

xtal

input resistance 10 −− MΩ

PIN SWPORT1
I

sink(max)

I

leak(max)

maximum sink current data byte 4: bit 0 = 0;

maximum leakage current data byte 4: bit 0 = 1;

PIN SWPORT2
I

sink(max)

I

leak(max)

maximum sink current data byte 5: bit 7 = 0;

maximum leakage current data byte 5: bit 1 = 1;

FM signal channel

FM RF INPUT
R

i

input resistance

(pins RFIN1 and RFIN2 to

RFGND)
C

i

input capacitance

(pins RFIN1 and RFIN2 to

RFGND)

data byte 5: bit 0 = 0;
V

SWPORT1

V

SWPORT1

V

SWPORT1

V

SWPORT1

< 0.5 V

<5V

< 0.5 V

<5V

500 −− µA

−1 − +1 µA

500 −− µA

−1 − +1 µA

75 100 125 Ω

2.5 4 6 pF

2002 Mar 12 19

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

RF

IP3

in

IP3

out

RF AGC

V

RF1

RF sensitivity input voltage fRF= 76 to 108 MHz;

∆f = 22.5 kHz; f

mod

(S+N)/N = 26 dB;
de-emphasis = 75 µs;
BAF = 300 Hz to 15 kHz

in-band 3rd-order intercept

point related to V

RFIN1-RFIN2

∆f1= 200 kHz; ∆f2= 400 kHz;
f

= 76 to 108 MHz

tuned

(peak value)

out-band 3rd-order

intercept point related to

V

RFIN1-RFIN2

(peak value)

RF input voltage for start of

AGC

∆f1= 4 MHz; ∆f2= 8 Hz;
f

= 76 to 108 MHz

tuned

f

= 93 MHz; f

RF1

=50dBµV;

V

RF2

V

∆

TMUTE

----------------------­V

RF1

14 mV

<

-------------------­3 dBµV

RF2

= 1 kHz;

= 98 MHz;

; note 1

− 2 3.5 µV

81 84 − dBµV

82 85 − dBµV

66 72 78 dBµV

IF filter

f
B
S

IF

IF
+200

IF filter centre frequency 215 225 235 kHz
IF filter bandwidth 85 94 102 kHz
HIGH side 200 kHz

selectivity

S

−200

LOW side 200 kHz
selectivity

S

+100

HIGH side 100 kHz
selectivity

S

−100

LOW side 100 kHz
selectivity

IR image rejection f

FM IF level detector and mute voltage

V

RF

RF input voltage for start of
level ADC

∆V

step

PIN TMUTE

V

level

V

level(slope)

R

o

level ADC step size 2 3 5 dB

level output DC voltage VRF=0µV 1.55 1.65 1.80 V

slope of level voltage VRF=10to500µV 150 165 180

output resistance 280 400 520 kΩ

∆f = +200 kHz;
f

= 76 to 108 MHz; note 2

tuned

∆f=−200 kHz;
f

= 76 to 108 MHz; note 2

tuned

∆f = +100 kHz;
f

= 76 to 108 MHz; note 2

tuned

∆f=−100 kHz;
f

= 76 to 108 MHz; note 2

tuned

= 76 to 108 MHz;

tuned

39 43 − dB

32 36 − dB

812− dB

812− dB

24 30 − dB

VRF=50dBµV

read mode data byte 4:

235µV

bit4=1

VRF=3µV 1.60 1.70 1.85 V

mV

--------------­20 dB

2002 Mar 12 20

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

FM demodulator: pin MPXO

V

MPXO

(S+N)/N maximum signal plus

THD total harmonic distortion VRF= 1 mV;L = R; ∆f = 75 kHz;

α

AM

R

o

I

sink

Soft mute

V

RF

α

mute

MPX decoder

V

; V

AFL

R

; R

AFL

I

sink(AFL)

I

sink(AFR)

V

MPXIN(max)

V

AFL/VAFR

α

cs(stereo)

demodulator output voltage VRF= 1 mV; L = R;

∆f = 22.5 kHz; f

mod

= 1 kHz;

60 75 90 mV

de-emphasis = 75 µs;
BAF = 300 Hz to 15 kHz

noise-to-noise ratio

VRF= 1 mV; L = R;
∆f = 22.5 kHz; f

mod

= 1 kHz;

54 60 − dB

de-emphasis = 75 µs;
BAF = 300 Hz to 15 kHz

− 0.5 1.5 %

f

= 1 kHz;

mod

de-emphasis = 75 µs

AM suppression VRF= 300 µV; L = R;

∆f = 22.5 kHz; f

mod

= 1 kHz;

40 −− dB

m = 0.3; de-emphasis = 75 µs;
BAF = 300 Hz to 15 kHz

demodulator output

−−500 Ω

resistance
demodulator output sink

−−30 µA

current

RF input voltage for soft
mute start

mute attenuation VRF=1µV; L = R;

α

= 3 dB; data byte 4:

mute

bit3=1

∆f = 22.5 kHz; f

mod

3510µV

10 20 30 dB

= 1 kHz
de-emphasis = 75 µs;
BAF = 300 Hz to 15 kHz;
data byte 4: bit 3 = 1

left and right audio

AFR

frequency output voltage

VRF= 1 mV; L = R;
∆f = 22.5 kHz; f

mod

60 75 90 mV

= 1 kHz;
de-emphasis = 75 µs

left and right audio

AFR

−−50 Ω

frequency output resistance

;

left and right audio

170 −− µA
frequency output sink
current

input overdrive margin THD < 3% 4 −− dB
left and right audio

frequency output voltage
difference

stereo channel separation VRF= 1 mV; R = L = 0 or R = 0

VRF= 1 mV;L = R; ∆f = 75 kHz;
f

= 1 kHz;

mod

de-emphasis = 75 µs

−1 − +1 dB

24 30 − dB

and L = 1 including 9% pilot;
∆f = 75 kHz; f

mod

= 1 kHz;
data byte 3: bit 3 = 0;
data byte 4: bit 1 = 1

2002 Mar 12 21

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(S+N)/N maximum signal plus

noise-to-noise ratio

THD total harmonic distortion VRF= 1 mV;L = R; ∆f = 75 kHz;

α

∆f

pilot

pilot

pilot suppression measured
at pins V

AFL

and V

AFR

stereo pilot frequency
deviation

f

∆

pilot1

--------------- ­f

∆

pilot2

pilot switch hysteresis VRF= 1 mV 2 −− dB

VRF= 1 mV; L = R;
∆f = 22.5 kHz; f

mod

= 1 kHz;

54 60 − dB

de-emphasis = 75 µs;
BAF = 300 Hz to 15 kHz

− 0.4 1 %

f

= 1 kHz;

mod

de-emphasis = 75 µs
related to ∆f = 75 kHz;

f

= 1 kHz;

mod

40 50 − dB

de-emphasis = 75 µs
VRF= 1 mV; read mode;

data byte 3:

bit7=1 − 3.6 5.8 kHz
bit7=0 1 3 − kHz

HIGH CUT CONTROL
T

de-em

de-emphasis time constant VRF=1mV

MONO/STEREO BLEND CONTROL

α

cs(stereo)

stereo channel separation VRF=45µV;R=L=0orR=0

MONO/STEREO SWITCHED

α

cs(stereo)

stereo channel separation
switching from mono to
stereo with increasing RF
input level

α

cs(stereo)

stereo channel separation
switching from stereo to
mono with decreasing RF
input level

data byte 5: bit2=0 38 50 62 µs
data byte 5: bit2=1 57 75 93 µs

VRF=1µV

data byte 5: bit2=0 114 150 186 µs
data byte 5: bit2=1 171 225 279 µs

41016dB
and L = 1 including 9% pilot;
∆f = 75 kHz; f

mod

= 1 kHz;
data byte 3: bit 3 = 0;
data byte 4: bit 1 = 1

VRF= 1 mV; R = L = 0 or R = 0

24 −− dB
and L = 1 including 9% pilot;
∆f = 75 kHz; f

mod

= 1 kHz;
data byte 3: bit 3 = 0;
data byte 4: bit 1 = 0

VRF=20µV;R=L=0orR=0

−−1dB
and L = 1 including 9% pilot;
∆f = 75 kHz; f

mod

= 1 kHz;
data byte 3: bit 3 = 0;
data byte 4: bit 1 = 0

2002 Mar 12 22

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BUS DRIVEN MUTE FUNCTIONS

Tuning mute

α

mute

α

mute(R)

α

mute(L)

Notes

1. VRF in Fig.7 is replaced by V

2. LOWside and HIGH side selectivitycan be switchedby changing themixer from HIGHside to LOWside LO injection.

V

and V

AFL

V

muting depth data byte 3: bit 1 = 1 −80 −− dB

AFR

V

muting depth data byte 3: bit 2 = 1 −80 −− dB

AFL

muting depth data byte 1: bit 7 = 1 −60 −− dB

AFR

RF1+VRF2

. The radio is tuned to 98 MHz (HIGH side injection).

10

, V

V

AFL

AFR

(dB)

0

−10

(1)

−20

(2)

−30

(4)

−40

−50

−60

−70

−80

−3

10

(1) Mono signal; soft mute on.
(2) Left channel with modulation left; SNC on.
(3) Right channel with modulation left; SNC on.
(4) Noise in mono mode; soft mute on.
(5) Noise in stereo mode; SNC on.
(6) Total harmonic distortion; ∆f = 75 kHz; L = R; f

(5)

(6)

−2

10

(3)

mod

= 1 kHz.

THD

(%)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

−1

110

10

2

10

VRF (mV)

0

3

10

Fig.5 FM characteristics 1.

2002 Mar 12 23

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

10

, V

V

AFL

AFR

(dB)

(1)

0

−10

−20

(2)

−30

−40

−50

(3)

−60

−70

−80

−3

10

(1) Mono signal; no soft mute.
(2) Noise in mono mode; no soft mute.
(3) Level voltage; V

CCA

= 2.7 V.

V

TMUTE

(V)

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

1.4

−2

10

−1

110

10

2

10

VRF (mV)

3

10

Fig.6 FM characteristics 2.

2002 Mar 12 24

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

INTERNAL PIN CONFIGURATION

PIN SYMBOL EQUIVALENT CIRCUIT

1 n.c.
2 CPOUT

270 Ω

2

3 VCOTANK1

120 Ω

3 4

120 Ω

4 VCOTANK2

5V

CC(VCO)

6 DGND
7V

CCD

8 DATA

8

6

2002 Mar 12 25

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PIN SYMBOL EQUIVALENT CIRCUIT

9 CLOCK

270 Ω

9 6

10 n.c.
11 WRITE/READ

12 BUSMODE

13 BUSENABLE

270 Ω

11 6

270 Ω

12 6

150 Ω

2002 Mar 12 26

13 6

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PIN SYMBOL EQUIVALENT CIRCUIT

14 SWPORT1

150 Ω

14

6

15 SWPORT2

16 XTAL1
17 XTAL2

18 PHASEFIL

150 Ω

15

6

16

17

18

19 PILFIL

2002 Mar 12 27

33

270 Ω

19

33

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PIN SYMBOL EQUIVALENT CIRCUIT

20 n.c.
21 n.c.
22 V

AFL

10 Ω

22

33

23 V

AFR

24 TMUTE

10 Ω

23

33

24

1 kΩ

33

2002 Mar 12 28

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PIN SYMBOL EQUIVALENT CIRCUIT

25 MPXO

150 Ω

25

33

26 V

ref

27 TIFC

28 LIMDEC1

26

33

40 kΩ

27

2002 Mar 12 29

270 Ω

28

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PIN SYMBOL EQUIVALENT CIRCUIT

29 LIMDEC2

30 n.c.
31 n.c.
32 I

gain

33 AGND
34 V

CCA

35 RFI1
36 RFGND
37 RFI2

270 Ω

32

35

29

37

2002 Mar 12 30

36

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PIN SYMBOL EQUIVALENT CIRCUIT

38 TAGC

38

36

39 LOOPSW

5

+

39

40 n.c.

2002 Mar 12 31

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

APPLICATION INFORMATION

CCA

V

13 MHz

10 kΩ

10 kΩ

15

14

pilot

PORT

SOFTWARE

PROGRAMMABLE

MUX

BUSENABLE

BUSMODE

WRITE/READ

13

12

11

mono

C-BUS

2

I

3-WIRE BUS

10

n.c.

CLOCK

22 nF

7

DATA

12 Ω

n.c

AFL

V

AFR

V

MPXO

33

47

33 nF

nFnF

(1)

comp

C

17

or

32.768 kHz

(1)

pull

C

16

22 nF

n.c.

1 nF

20

21

19

33 kΩ

22 nF

18
22
2324252628

CRYSTAL

SDS

OSCILLATOR

MPX

DECODER

SOFT

MUTE

ref

POWER

SUPPLY

I

27

TEA5767HN

DEMODULATOR

IF COUNTER

n.c

47 nF

47 nF

CCD

V

29

LIMITER

GAIN

AMPLIFIER

STABILISATOR

RESONANCE

30

31

32

n.c.

33

R1

34

22 µF

22 nF

4.7 Ω

CCA

V

ADC

LEVEL

I/Q-MIXER

IF CENTRE

FREQUENCY

: 2

N1

1st FM

100 pF

ADJUST

36

35

27

pF

Ω

40

L1

AGC

37

47

100

pF

MHz

RF

V

programmable divider output

reference frequency divider output

22 nF

VCO

D1 D2

L3 L2

39 nF

kΩ

100

TUNING SYSTEM

38

39

2345689
1

40

n.c.

10

n.c.

10 nF

kΩ

47 Ω

4.7 nF

CC(VCO)

V

Fig.7 Test circuit.

data depends on crystal specification.

pull

and C

comp

(1) C

2002 Mar 12 32

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

PACKAGE OUTLINE

HVQFN40: plastic, heatsink very thin quad flat package; no leads;
40 terminals; body 6 x 6 x 0.85 mm

terminal 1
index area

A

D

B

A

4

E

A

detail X

SOT618-1

e

1

e

11 20

L

10

E

h

pin 1 index

1

40

DIMENSIONS (mm are the original dimensions)

A

A

UNIT

max.

mm

Note

1. Plastic or metal protrusions of 0.076 mm maximum per side are not included.

OUTLINE
VERSION

SOT618-1 MO-220

4

max.

0.80

(1)

b

0.35

0.18

IEC JEDEC EIAJ

D

6.05

5.95

D

4.25

3.95

h

1/2 e

b

21

e

1/2 e

30

D

h

0 2.5 5 mm

(1)

E

E

h

6.05

4.25

5.95

3.95

31

0.51.00

REFERENCES

e

4.5

scale

1

e

4.5

2

∅ v

∅ w

C

y

w

C

1

ye

0.05 0.1

EUROPEAN

PROJECTION

y

1

M

ACCB

M

e

2

L

0.50

0.2v0.1

0.30

y

X

ISSUE DATE

01-06-07
01-08-08

2002 Mar 12 33

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

SOLDERING
Introduction to soldering surface mount packages

Thistext gives averybriefinsight to acomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for
certainsurface mount ICs, butitis not suitable forfinepitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardby screen printing,stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.

Wave soldering

Conventional single wave soldering is not recommended
forsurface mount devices (SMDs)orprinted-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackages with leads onfoursides, the footprint must
be placedat a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering,the packagemust
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

If wave soldering is used the following conditions must be
observed for optimal results:

2002 Mar 12 34

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, HBGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is onlysuitable forSSOP and TSSOP packages with a pitch(e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

(1)

STATUS

(2)

DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

2002 Mar 12 35

Philips Semiconductors Preliminary specification

Low-power FM stereo radio for handheld applications TEA5767HN

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given arein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyother conditions abovethosegiven in the
Characteristics sections of the specificationis not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty thatsuchapplicationswill be
suitable for the specified use without further testing or
modification.

2

PURCHASE OF PHILIPS I

C COMPONENTS

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result in personal injury.Philips
Semiconductorscustomersusing or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any oftheseproducts, conveys no licenceortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

Purchase of Philips I
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.

2

C components conveys a license under the Philips’ I2C patent to use the

2002 Mar 12 36