Philips TDA8928J User Manual

INTEGRATED CIRCUITS

DATA SH EET

TDA8928J

Power stage 2 x 10 or 1 x 20 W
class-D audio amplifier

Preliminary specification
Supersedes data of 2004 Feb 04

2004 May 05

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

CONTENTS

1 FEATURES
2 APPLICATIONS
3 GENERAL DESCRIPTION
4 QUICK REFERENCE DATA
5 ORDERING INFORMATION
6 BLOCK DIAGRAM
7 PINNING
8 FUNCTIONAL DESCRIPTION

8.1 Power stage

8.2 Protection

8.2.1 Maximum temperature

8.2.2 Maximum current
9 LIMITING VALUES
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
12 DC CHARACTERISTICS
13 AC CHARACTERISTICS
14 SWITCHING CHARACTERISTICS

TDA8928J

15 TEST AND APPLICATION INFORMATION

15.1 SE application

15.2 Package ground connection

15.3 Output power

15.4 Reference design

15.4.1 Printed-circuit board

15.4.2 Bill of materials

15.5 Curves measured in reference design
16 PACKAGE OUTLINE
17 SOLDERING

17.1 Introduction to soldering through-hole mount
packages

17.2 Soldering by dipping or by solder wave

17.3 Manual soldering

17.4 Suitability of through-hole mount IC packages
for dipping and wave soldering methods

18 DATA SHEET STATUS
19 DEFINITIONS
20 DISCLAIMERS

2004 May 05 2

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

1 FEATURES

• High efficiency (> 90 %)

• Supply voltage from ±7.5 V to ±30 V

• Very low quiescent current

• High output power

• Diagnostic output

• Usable as a stereo Single-Ended (SE) amplifier

• Electrostatic discharge protection (pin to pin)

• No heatsink required.

2 APPLICATIONS

• Television sets

• Home-sound sets

• Multimedia systems

• All mains fed audio systems.

TDA8928J

3 GENERAL DESCRIPTION

The TDA8928J is a switching power stage for a high
efficiency class-D audio power amplifier system.

With this power stage a compact 2 × 10 W self oscillating
digital amplifier system can be built, operating with high
efficiency and very low dissipation. No heatsink is
required. Thesystem operates over a wide supply voltage
range from ±7.5 V up to ±30 V and consumes a very low
quiescent current.

4 QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

General

V

P

I

q(tot)

η efficiency Po= 10 W; RL=8Ω; VP= ±12.5 V − 90 − %

Stereo single-ended configuration

P

o

5 ORDERING INFORMATION

TYPE

NUMBER

TDA8928J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3
TDA8928ST RDBS17P plastic rectangular DIL-bent-SIL power package; 17 leads (row

supply voltage ±7.5 ±12.5 ±30 V
total quiescent current no load connected; VP= ±12.5 V − 25 45 mA

output power RL=8Ω; THD = 10 %; VP= ±12.5 V 9 10 − W

RL=16Ω; THD = 10 %; VP= ±12.5 V − 5 − W

PACKAGE

NAME DESCRIPTION VERSION

SOT577-2

spacing 2.54 mm)

2004 May 05 3

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

6 BLOCK DIAGRAM

handbook, full pagewidth

TDA8928J

EN1

SW1

REL1

STAB

DIAG

POWERUP

EN2

SW2

REL2

4
1
2
9

3

15

14
17
16

CONTROL

AND

HANDSHAKE

temp

TEMPERATURE SENSOR

current

CURRENT PROTECTION

CONTROL

AND

HANDSHAKE

AND

DRIVER

HIGH

DRIVER

LOW

DRIVER

HIGH

DRIVER

LOW

V

DD2VDD1

13

V
V

SS1
DD2

TDA8928J

5

6

BOOT1

7

OUT1

12

BOOT2

11

OUT2

V

Fig.1 Block diagram.

810

SS1VSS2

MGX377

2004 May 05 4

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

7 PINNING

SYMBOL PIN DESCRIPTION

SW1 1 digital switch input; channel 1
REL1 2 digital control output; channel 1
DIAG 3 digital open-drain output for

overtemperature and overcurrent

report
EN1 4 digital enable input; channel 1
V

DD1

BOOT1 6 bootstrap capacitor; channel 1
OUT1 7 PWM output; channel 1
V

SS1

STAB 9 decoupling internal stabilizer for

V

SS2

OUT2 11 PWM output; channel 2
BOOT2 12 bootstrap capacitor; channel 2
V

DD2

EN2 14 digital enable input; channel 2
POWERUP 15 enable input for switching on

REL2 16 digital control output; channel 2
SW2 17 digital switch input; channel 2

5 positive power supply; channel 1

8 negative power supply; channel 1

logic supply

10 negative power supply; channel 2

13 positive power supply; channel 2

internal reference sources

handbook, halfpage

POWERUP

SW1

REL1

DIAG

EN1

V

DD1

BOOT1

OUT1

V

SS1

STAB

V

SS2

OUT2

BOOT2

V

DD2
EN2

REL2

SW2

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17

TDA8928J

TDA8928J

MGX378

Fig.2 Pin configuration.

2004 May 05 5

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

8 FUNCTIONAL DESCRIPTION

The TDA8928J is a two-channel audio power amplifier
system using class-D technology.

The power stage TDA8928J is used for driving the
loudspeaker load. It performs a level shift from the
low-power digital PWM signal, at logic levels, to a
high-power PWM signal that switches between the main
supplylines. A 2nd-order low-pass filter convertsthePWM
signal into an analog audio signal across the loudspeaker.

8.1 Power stage

The power stage contains high-power DMOS switches,
drivers, timing and handshaking between the power
switches and some control logic (see Fig.1).

The following functions are available:

• Switch (pins SW1 and SW2): digital inputs; switching
from VSSto VSS+ 12 V and driving the power DMOS
switches

• Release (pins REL1 and REL2): digital outputs;
switching from VSSto VSS+ 12 V; follow pin SW1 and
SW2 with a small delay. Note: for self oscillating
applications this pin is not used

• Power-up (pin POWERUP): must be connected to a
continuous supply voltage of at least VSS+ 5 V with
respect to V

• Enable (pins EN1 and EN2): digital inputs; at a level of
VSSthe power DMOS switches are open and the PWM
outputs are floating; at a level of VSS+ 12 V the power
stage is operational

• Diagnostics (pin DIAG): digital open-drain output; pulled
down to VSS if the maximum temperature or maximum
current is exceeded.

SS

TDA8928J

8.2 Protection

Temperature and short-circuit protection sensors are
included in the TDA8928J. The diagnostic output is pulled
down to VSS in the event that the maximum current or
maximum temperature is exceeded. The system shuts
itself down when pin DIAG is connected to pins EN1 and
EN2.

8.2.1 MAXIMUM TEMPERATURE
Pin DIAG becomes LOW if the junction temperature (Tj)

exceeds 150 °C. Pin DIAG becomes HIGH again if Tj is
dropped to approximately 130 °C, so there is a hysteresis
of approximately 20 °C.

8.2.2 MAXIMUM CURRENT
When the loudspeaker terminals are short-circuited this

will be detected by the current protection. Pin DIAG
becomes LOW if theoutput current exceeds the maximum
outputcurrentof 2 A. Pin DIAG becomes HIGHagainifthe
output current drops below 2 A. The output current is
limited at the maximum current detection level when pin
DIAG is connected to pins EN1 and EN2.

2004 May 05 6

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

9 LIMITING VALUES

In accordance with the Absolute Maximum Rate System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

V

P(sc)

I

ORM

T

stg

T

amb

T

vj

V

esd(HBM)

V

esd(MM)

supply voltage −±30 V
supply voltage for

−±30 V

short-circuits across the load
repetitive peak current in

− 2A

output pins
storage temperature −55 +150 °C
ambient temperature −40 +85 °C
virtual junction temperature − 150 °C
electrostaticdischarge voltage

(HBM)

note 1

all pins with respect to VDD (class 1a) −500 +500 V
all pins with respect to VSS (class 1a) −1500 +1500 V
all pins with respect to each other

−1500 +1500 V

(class 1a)

electrostaticdischarge voltage
(MM)

note 2

all pins with respect to VDD (class B) −250 +250 V
all pins with respect to VSS (class B) −250 +250 V
all pins with respect to each other

−250 +250 V

(class B)

Notes

1. Human Body Model (HBM); Rs= 1500 Ω; C = 100 pF.

2. Machine Model(MM); Rs=10Ω; C = 200 pF; L = 0.75 µH.

10 THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-a)
th(j-c)

thermal resistance from junction to ambient in free air 40 K/W
thermal resistance from junction to case in free air 1.5 K/W

11 QUALITY SPECIFICATION

In accordance with

“SNW-FQ611”

if this device is used as an audio amplifier.

2004 May 05 7

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

12 DC CHARACTERISTICS

VP= ±12.5 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

q(tot)

Internal stabilizer logic supply (pin STAB)

V

O(STAB)

Switch inputs (pins SW1 and SW2)

V

IH

V

IL

Control outputs (pins REL1 and REL2)

V

OH

V

OL

Diagnostic output (pin DIAG, open-drain)

V

OL

I

LO

Enable inputs (pins EN1 and EN2)

V

IH

V

IL

V

EN(hys)

I

I(EN)

Switching-on input (pin POWERUP)

V

POWERUP

I

I(POWERUP)

Temperature protection

T

diag

T

hys

Current protection

I

O(ocpl)

=25°C; measured in test diagram of Fig.4; unless otherwise specified.

amb

supply voltage ±7.5 ±12.5 ±30 V
total quiescent current no load connected − 25 45 mA

outputs floating − 510mA

stabilizer output voltage referenced to V

HIGH-level input voltage referenced to V
LOW-level input voltage referenced to V

HIGH-level output voltage referenced to V
LOW-level output voltage referenced to V

LOW-level output voltage I

= 1 mA; note 1 0 − 1.0 V

DIAG

SS

SS
SS

SS
SS

11.7 13 14.3 V

10 − 15 V
0 − 2V

10 − 15 V
0 − 2V

output leakage current no error condition −−50 µA

HIGH-level input voltage referenced to V
LOW-level input voltage referenced to V

SS
SS

9 − 15 V

05− V
hysteresis voltage − 4 − V
input current −−300 µA

operating voltage referenced to V
input current V

temperature activating diagnostic V
hysteresis on temperature

POWERUP

DIAG=VDIAG(LOW)

V

DIAG=VDIAG(LOW)

=12V − 100 170 µA

SS

5 − 12 V

150 −−°C

− 20 −°C

diagnostic

overcurrent protection level − 2.1 − A

Note

1. Temperature sensor or maximum current sensor activated.

2004 May 05 8

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

13 AC CHARACTERISTICS

VP= ±12.5 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Single-ended application; note 1

P

o

THD total harmonic distortion Po= 1 W; note 3

η efficiency endstage Po=2× 10 W; fi= 1 kHz; note 4 − 90 − %

Notes

1. V

= ±12.5 V; RL=8Ω; fi= 1 kHz; f

P

measured in reference design (SE application) shown in Fig.5; unless otherwise specified.

2. Indirectly measured; based on R

3. Total Harmonic Distortion (THD) is measured in a bandwidth of 22 Hz to 20 kHz (AES 17 brickwall filter). When
distortion is measured using a low-order low-pass filter a significantly higher value will be found, due to the switching
frequency outside the audio band. Measured using the typical application circuit, given in Fig.5.

4. Efficiency for power stage.

=25°C; unless otherwise specified.

amb

output power RL=8Ω

RL=16Ω

= 310 kHz; Rs= 0.1 Ω (series resistance of filter coil); T

osc

measurement.

ds(on)

THD = 0.5 % 7
THD = 10 % 9

(2)
(2)

8 − W
10 − W

THD = 0.5 % − 4 − W
THD = 10 % − 5 − W

fi= 1 kHz − 0.05 0.1 %
fi= 10 kHz − 0.2 − %

=25°C;

amb

2004 May 05 9

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

14 SWITCHING CHARACTERISTICS

VP= ±12.5 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

PWM outputs (pins OUT1 and OUT2); see Fig.3

t

r

t

f

t

blank

t

PD

t

W(min)

R

ds(on)

=25°C; measured in Fig.4; unless otherwise specified.

amb

rise time − 30 − ns
fall time − 30 − ns
blanking time − 70 − ns
propagation delay from pin SW1 (SW2) to

− 200 − ns

pin OUT1 (OUT2)
minimum pulse width − 220 270 ns
on-resistance of the output

− 0.2 0.4 Ω

transistors

handbook, full pagewidth

PWM

output

V

SW

(V)

V

REL
(V)

(V)

V

STAB

V

STAB

1/f

osc

V

DD

0 V

V

SS

t

r

t

PD

V

SS

V

SS

100 ns

t

f

t

blank

MGW145

Fig.3 Timing diagram PWM output, switch and release signals.

2004 May 05 10

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2004 May 05 11

12 V

12 kΩ

POWERUP

book, full pagewidth

EN1

SW1

1

REL1

STAB

DIAG

15

4

2
9

3

TDA8928J

CONTROL

AND

HANDSHAKE

temp

TEMPERATURE SENSOR

current

CURRENT PROTECTION

AND

DRIVER

HIGH

DRIVER

LOW

V

DD2VDD1

13 5

V

SS1

V

DD2

12

6

7

BOOT1

OUT1

BOOT2

15 nF

V

OUT1

V

2V

15 TEST AND APPLICATION INFORMATION

audio amplifier

P

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

EN2

14

100

nF

V

V

V

V

V

EN

SW1

12 V

0

V

REL1

STAB

V

V

V

DIAG

SW2

12 V

0

SW2

REL2

V

V

REL2

17
16

CONTROL

AND

HANDSHAKE

DRIVER

HIGH

DRIVER

LOW

810
V

SS1

V

11

SS2

OUT2

V

OUT2

15 nF

V

MGX379

TDA8928J

Fig.4 Test diagram.

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

15.1 SE application

For a SE application the application diagram as shown in Fig.5 can be used.

15.2 Package ground connection

The heatsink of the TDA8928J is connected internally to VSS.

15.3 Output power

The output power in SE self oscillating class-D applications can be estimated using the formula

R

-----------------------------------------------­RLR

o(1%)

=

----------------------------------------------------------------------

P

The maximum current should not exceed 2 A.

L

++()

ds(on)Rs

2R

×

L

I

O(max)

Where:

RL= load impedance
Rs= series resistance of filter coil
P

= output power just at clipping.

o(1%)

The output power at THD = 10 %: P

2

V

×

P

=

VP[]

------------------------------------------­RLR

++

ds(on)Rs

o(10%)

= 1.25 × P

o(1%)

.

TDA8928J

15.4 Reference design

The reference design for a self oscillating class-D system for the TDA8928J is shown in Fig.5. The Printed-Circuit Board
(PCB) layout is shown in Figs 6, 7 and 8. The bill of materials is given in Section 15.4.2.

2004 May 05 12

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2004 May 05 13

L1

L2

Q1

BC856

Q2

V

DDP

V

SSP

STAB (U1,9)

R11
2 kΩ

R15
10 kΩ

V

SSP

R17

5.6 kΩ

R12
2 kΩ

STAB (U1,9)

J2

21

C37
220 pF

V

SSP

C5

C7

R24

0 Ω

V

SSP

470 µF

(35 V)

22 µF

(100 V)

SW1

REL1

POWERUP

DIAG

REL2

SW2

C6

470 µF

(35 V)

R26

0 Ω

C8

220 nF

EN1
EN2

J1

21

C10
220 nF

V

DD1VDD2

513

1
2

15

3

4
14
16
17

U1

TDA8928J

810

V

SS1VSS2

V

SSP

C11
220 nF

R19

5.6 Ω
L3

33 µH

C24
1 µF

C28
100 nF

C25
1 µF

L4

33 µH

R21

5.6 Ω

mgx380

V

V

V

V

DDP

SSP

39 kΩ

39 kΩ

DDP

SSP

C28
560 pF

C29
560 pF

C34
220 nF

R22
22 Ω

R30

C27
22 µF (100 V)

R31

C35
220 nF

R23
22 Ω

C30
560 pF

C31
560 pF

C32
470 nF

C33
470 nF

15 nF

C13
15 nF

V

DDP

V

SSP

C9

220 nF

OUT1

7

BOOT1

6

STAB

9

BOOT2

12

OUT2

11

In2

C39

2.2 nF

C40

47 nFIn1

R8

3.9 kΩ

C42

2.2 nF

R32

100 Ω

R3

1 kΩ

C19

2.2 nF
C20

2.2 nF

R5

220 kΩ

3.9 kΩ

R6

220 kΩ

C21

2.2 nF
C22

2.2 nF

R4

1 kΩ

R35

150 Ω

R7

C41

47 nF

CON1
supply

1
2
3

R1
10 kΩ

R33

3.9
kΩ

2

3

R10

0 Ω

R28

0 Ω

R29

0 Ω

5

6

R34

3.9 kΩ

R2
10 kΩ

+14.5 V

−14.5 V

V

DDP

8

4
1

J3

2

V

SSP

R9
1 kΩ

U2A
LM393

100 nF

(100 V)

U2B
LM393

1

C17

C15

22 µF

power-ON

7

C1
100 nF

C2
100 nF

C14

22 µF (100 V)

C16

100 nF

V

DDP

S1

C38
100 nF

R25
2 kΩ

DZ2

3.3 V

C3
470 µF
(35 V)

C4
470 µF
(35 V)

R14

15 kΩ

R13

15 kΩ

R16

1 kΩ

bead

bead

DZ1
36 V

BC848

C12

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

audio amplifier

LS1
8 Ω

V

DDP

V

SSP

V

DDP

LS2
8 Ω

TDA8928J

Fig.5 Single-ended self oscillating class-D system application diagram for TDA8928J.

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

15.4.1 PRINTED-CIRCUIT BOARD
The printed-circuit board dimensions are 8.636 × 5.842 cm; single-sided copper of 35 µm; silk screen on both sides;

79 holes; 94 components (32 resistors and 41 capacitors).

handbook, full pagewidth

R23

C34

R22

C35

OUT1

C12 C13

C10

C11

R29

OUT2

R24

C26

GND

R28

pin 1

R30 C28

C24

C8

C9

C1

V

R13
R14

DD

C25

R10

Q2

R31

C26

C26

C31

C31

Q1

R25

R1

R19

R19

R21

R21

R2
C30

C37R15

C37R15

R4

R9

C22
C21

R17

R6

R8

R16

IN2 IN1

C38

R11

R35

R12

C16

C41

R32

C45
C36
R33
R34

U2

C40

R3
C19
C50

R7

R5

C17

R26

C2

++−−

22 V

handbook, full pagewidth

Bottom silk

MDB615

Fig.6 Printed-circuit board (bottom silk) layout for TDA8928J.

Bottom copper

Fig.7 Printed-circuit board (bottom copper) layout for TDA8928J.

2004 May 05 14

MDB617

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

L3

L4

C32 C33

Con3

Out1 Out2

C7

L2

Con2 Con1

TDA8928ST

C5

J1

C27

C6

L1

C4 C3

GND

V

DD

SS

Top silk

J2

V

U1

DZ1

S1

DZ2

power_on

TDA8928J

state of D art

VP typ +/- 12.5 V

2 x 10 W in 8 Ω

single layer

demo PCB v2r4

RL 1 2003

C14 C15

J3

CO2 CO1

In1 In2

mgx381

Fig.8 Printed-circuit board (top silk) layout for TDA8928ST.

15.4.2 BILL OF MATERIALS

COMPONENT DESCRIPTION TYPE COMMENTS

U1 TDA8928ST Philips Semiconductors,

SOT577-2

U2 LM393AD National, SO8 alternatives: TI

semiconductors and On

semiconductors
DZ1 36 V Zener diode BZX-79C36V, DO-35 used as jumper
DZ2 3.3 V Zener diode BZX-79C3V3, DO-35 used as jumper, optional
Q1 BC848 transistor NPN, SOT23
Q2 BC856 transistor PNP, SOT23
L1, L2 bead Murata BL01RN1-A62 used as jumper
L3, L4 33 µH coil Toko 11RHBP-330M ws totally shielded
S1 power-on switch PCB switch, SACME

optional

09-03290-01
Con1 VSS, GND, VDD connector Augat 5KEV-03 optional
Con2, Con3 Out2, Out1 connector Augat 5KEV-02 optional
CO1, CO2 In1, In2 connector Cinch Farnell 152-396 optional
J1, J2, J3 wire Jumpers, D = 0.5 mm

Capacitors

C37 220 pF, 50 V SMD0805
C28, C29, C30,

560 pF, 100 V SMD0805 50 V is OK

C31

2004 May 05 15

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

COMPONENT DESCRIPTION TYPE COMMENTS

C19, C20, C21,
C22, C39, C42

C12, C13 15 nF, 50 V SMD0805
C40, C41 47 nF, 50 V SMD1206
C1, C2, C16, C17,

C26, C38
C8, C9, C10, C11,

C34, C35
C32, C33 470 nF, 63 V MKT
C24, C25 1 µF, 16 V SMD1206 1206 due to supply range
C7, C14, C15,

C27
C3, C4, C5, C6 470 µF, 35 V Panasonic M Series

C18, C23, C36 these capacitors have been

Resistors

R10, R26, R28,
R29

R24 0 Ω SMD0805 short-circuited in a new

R19, R21 5.6 Ω, 0.25 W SMD1206 1206 due to dissipation
R22, R23 22 Ω, 1 W SMD2512 2512 due to dissipation
R35 150 Ω SMD1206 used as jumper
R32 100 Ω SMD1206 used as jumper
R9 1 kΩ SMD1206 used as jumper
R3, R4, R16 1 kΩ SMD0805
R11, R12 2 kΩ SMD1206 used as jumpers
R25 2 kΩ SMD0805
R7, R8, R33, R34 3.9kΩ SMD0805
R17 5.6 kΩ SMD0805
R1, R2, R15 10 kΩ SMD0805
R13, R14 15 kΩ SMD0805
R30, R31 39 kΩ SMD0805
R5, R6 220 kΩ SMD0805
R18, R20, R27 these resistors have been

2.2 nF, 50 V SMD0805

100 nF, 50 V SMD0805

220 nF, 50 V SMD1206 C8 to C11 used as jumper

22 µF, 100 V Panasonic NHG Series

ECA1JHG220

ECA1VM471

removed

0 Ω SMD1206 used as jumpers

removed

63 V is OK

printed-circuit board layout

2004 May 05 16

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

15.5 Curves measured in reference design

2

10

handbook, halfpage

THD + N

(%)

10

1

−1

10

−2

10

−3

10

−2

10

2 × 8 Ω SE; VP= ±12.5 V.
(1) 6 kHz.
(2) 1 kHz.
(3) 100 Hz.

(1)

(2)
(3)

−1

10

11010

MGX383

Po (W)

2

2

10

handbook, halfpage

THD + N

(%)

10

1

−1

10

−2

10

−3

10

10

2 × 8 Ω SE; VP= ±12.5 V.
(1) Po=10W.
(2) Po=1W.

TDA8928J

MGX384

(1)

(2)

2

10

3

10

4

10

fi (Hz)

5

10

Fig.9 THD + N as function of output power.

100

handbook, halfpage

η

(%)

80

60

40

20

0

010

2 × 8 Ω SE; VP= ±12.5 V; fi= 1 kHz.

2468

MGX385

Po (W)

Fig.10 THD + N as function of frequency.

handbook, halfpage

0

SVRR

(dB)

−10

−20

−30

−40

−50

−60

10

VP= ±12.5 V; V

10

ripple(p-p)

2

=2V.
(1) Both supply lines in phase.
(2) One supply line (VSS) rippled.
(3) One supply line (VDD) rippled.
(4) Both supply lines in antiphase.

MGX386

(1)
(2)

(3)

(4)

3

10

4

10

fi (Hz)

5

10

Fig.11 Efficiency as function of output power.

2004 May 05 17

Fig.12 SVRR as function of frequency.

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

100

handbook, halfpage

S/N

(dB)

80

60

40

20

0

−2

10

2 × 8 Ω SE; VP= ±12.5 V.

Fig.13 S/N as function of output power.

−1

10

11010

MGX387

Po (W)

2

handbook, halfpage

0

α

cs

(dB)

−20

−40

−60

(1)

(2)

−80

−100

10

2 × 8 Ω SE; VP= ±12.5 V.
(1) Po=1W.
(2) Po=10W.

2

10

3

10

Fig.14 Channel separation as function of

frequency.

TDA8928J

MGX388

4

10

fi (Hz)

5

10

35

handbook, halfpage

G

(dB)

30

25

20

15

10

10

2 × 8 Ω SE; VP= ±12.5 V; Vi= 100 mV.

2

10

Fig.15 Gain as function of frequency.

MDB624

3

10

4

10

fi (Hz)

5

10

24

handbook, halfpage

P

o

(W)

20

16

12

8

4

10

THD + N = 10 %; fi= 1 kHz.
(1) 2 × 8 Ω SE.
(2) 2 × 16 Ω SE.

12

(1)

(2)

14 16 18

MGX389

VP (V)

20

Fig.16 Output power as function of supply voltage.

2004 May 05 18

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

16 PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm)

non-concave

x

D

E

h

d

D

h

view B: mounting base side

A

2

TDA8928J

SOT243-3

j

117

e

0.48

0.38

1

e

(1)

deD

24.0

20.0

23.6

19.6

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A2bpcD

17.0

4.6

4.4

0.75

0.60

15.5

w

b

p

E

h

12.2

10 2.54

11.8

M

0 5 10 mm

scale

(1)

1

1.27

e

5.08

B

E

A

L

3

L

2.4

1.6

c

e

2

4.3

Q

m

3.4

3.1

LL3m

8.4

7.0

E

2

h

6

Qj

2.1

1.8

v

v

0.6

M

0.25w0.03

(1)

Z

x

2.00

1.45

OUTLINE

VERSION

SOT243-3

IEC JEDEC JEITA

REFERENCES

2004 May 05 19

EUROPEAN

PROJECTION

ISSUE DATE

99-12-17
03-03-12

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads
(row spacing 2.54 mm)

non-concave

D

d

x

E

h

D

h

view B: mounting base side

A

2

TDA8928J

SOT577-2

j

117

e

e

0.48

0.38

1

(1)

D

de LL

24.0

20.0

23.6

19.6

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e1e

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A2bpcE

4.6

4.4

0.75

0.60

13.5

w

b

p

D

10 2.54

M

0 5 10 mm

(1)

h

12.2

11.8

scale

1.27 2.54

B

E

A

QL

c

e

2

M

v

E

2

h

6

3.4

3.1

3.75

3.15

L

1

3.75

3.15

Qj

1

2.1

1.8

0.6

w

v

0.4

0.03

(1)

x

Z

2.00

1.45

OUTLINE

VERSION

SOT577-2

IEC JEDEC JEITA

REFERENCES

2004 May 05 20

EUROPEAN

PROJECTION

ISSUE DATE

01-01-05
03-03-12

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D
audio amplifier

17 SOLDERING

17.1 Introduction to soldering through-hole mount packages

This text gives a brief insight to wave, dip and manual
soldering.Amore in-depth account of soldering ICs can be
found in our

Packages”

Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

17.2 Soldering by dipping or by solder wave

Driven by legislation and environmental forces the
worldwide use of lead-free solder pastes is increasing.
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.

“Data Handbook IC26; Integrated Circuit

(document order number 9398 652 90011).

TDA8928J

Thetotalcontacttimeofsuccessivesolderwaves must not
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

17.3 Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

stg(max)

). If the

17.4 Suitability of through-hole mount IC packages for dipping and wave soldering methods

PACKAGE

CPGA, HCPGA − suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable

(2)

PMFP

Notes

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

2. For PMFP packages hot bar soldering or manual soldering is suitable.

− not suitable

DIPPING WAVE

SOLDERING METHOD

(1)

2004 May 05 21

Philips Semiconductors Preliminary specification

Power stage 2 x 10 or 1 x 20 W class-D

TDA8928J

audio amplifier

18 DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

19 DEFINITIONS Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions above those given inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

20 DISCLAIMERS Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 May 05 22

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R30/02/pp23 Date of release: 2004 May 05 Document order number: 9397 750 13041

SCA76