Philips TDA8559T User Manual

TDA8559T

Low-voltage stereo headphone ampliﬁer

Rev. 03 — 15 May 2006 Product data sheets

1. General description

The TDA8559T is a stereo ampliﬁer that operates over a wide supply voltage range from

1.9 V to 30 V and consumes a very low quiescent current. This makes it suitable for battery fed applications (2 ×1.5 V cells). Because of an internal voltage buffer, this device can be used with or without a capacitor connected in series with the load. It can be applied as a headphone ampliﬁer, but also as a mono ampliﬁer with a small speaker (25 Ω), or as a line driver in mains applications.

2. Features

n Operating voltage from 1.9 V to 30 V n Very low quiescent current n Low distortion n Few external components n Differential inputs n Usable as a mono ampliﬁer in Bridge-Tied Load (BTL) or stereo Single-Ended (SE) n Single-ended mode without loudspeaker capacitor n Mute and Standby mode n Short-circuit proof to ground, to supply voltage (< 10 V) and across load n No switch on or switch off clicks n ESD protected on all pins

3. Applications

n Portable telephones n MP3 players n Portable audio n Mains fed equipment

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4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Supplies

q(tot)

stb

Stereo application

THD total harmonic distortion P

BTL application

THD total harmonic distortion P

[1] Measured with low-pass ﬁlter 30 kHz.

TDA8559T

Low-voltage stereo headphone ampliﬁer

operating supply voltage 1.9 3 30 V total quiescent current open load - 2.75 4 mA standby supply current open load - - 10 µA

output power THD = 10 % 30 35 - mW

= 20 mW;

= 1 kHz

= 20 mW;

=10kHz

voltage gain 25 26 27 dB small signal roll-off

−1 dB - 750 - kHz

frequency

output power THD = 10 % 125 140 - mW

= 70 mW;

= 1 kHz

= 70 mW;

=10kHz

voltage gain 31 32 33 dB

[1]

- 0.075 0.15 %

[1]

- 0.1 - %

- 0.05 0.1 %

- 0.1 - %

5. Ordering information

Table 2. Ordering information

Type number Package

Name Description Version

TDA8559T SO16 plastic small outline package; 16 leads; body width 3.9 mm; body thickness

1.47 mm

Product data sheets Rev. 03 — 15 May 2006 2 of 36

SOT109-1

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6. Block diagram

TDA8559T

Low-voltage stereo headphone ampliﬁer

STANDBY

+IN1

−IN1

MUTE

MODE

+IN2

−IN2

SVRR

2 3

7 8

5 6

REFERENCE

50 kΩ

kΩ

100 kΩ

V/I

−

50 kΩ

INPUT LOGIC

V/I

−

50 kΩ

TDA8559T

− +

−

BUFFER

50 kΩ

DQC

50 kΩ

1615

OUT1

OUT2

BUFFER

Fig 1. Block diagram

139,10

mgd115

n.c. GND

Product data sheets Rev. 03 — 15 May 2006 3 of 36

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7. Pinning information

7.1 Pinning

TDA8559T

Low-voltage stereo headphone ampliﬁer

STANDBY V

Top view

+IN1 V

−IN1 OUT1

SVRR GND

+IN2 BUFFER

−IN2 OUT2

MUTE n.c.

MODE n.c.

Fig 2. Pin conﬁguration

7.2 Pin description

Table 3. Pin description

Symbol Pin Description

STANDBY 1 standby select +IN1 2 non-inverting input 1

−IN1 3 inverting input 1 SVRR 4 supply voltage ripple rejection +IN2 5 non-inverting input 2

−IN2 6 inverting input 2 MUTE 7 mute select MODE 8 input mode select n.c. 9 not connected n.c. 10 not connected OUT2 11 output 2 BUFFER 12 buffer output (0.5V GND 13 ground OUT1 14 output 1 V

15 high supply voltage 16 low supply voltage

TDA8559T

001aae802

)

Product data sheets Rev. 03 — 15 May 2006 4 of 36

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8. Functional description

The TDA8559T contains two ampliﬁers with differential inputs, a 0.5VPoutput buffer and a high supply voltage stabilizer. Each ampliﬁer consists of a voltage-to-current converter (V/I), an output ampliﬁer and a common dynamic quiescent current controller. The gain of each ampliﬁer is internally ﬁxed at 26 dB (= 20 ×). The 0.5VP output can be used as a replacement for the single-ended capacitors. The two ampliﬁers can also be used as a mono ampliﬁer in a BTL conﬁguration thereby resulting in more output power.

With three mode select pins, the device can be switched into the following modes:

1. Standby mode (IP<10µA)

2. Mute mode

3. Operation mode, with two input selections (the input source is directly connected or connected via coupling capacitors at the input).

The ripple rejection in the stereo application with a single-ended capacitor can be improved by connecting a capacitor between the 0.5VP capacitor pin and ground.

TDA8559T

Low-voltage stereo headphone ampliﬁer

The device is fully protected against short-circuiting of the output pins to ground, to the low supply voltage pin and across the load.

8.1 V/I converters

The V/I converters have a transconductance of 400 µS. The inputs are completely symmetrical and the two ampliﬁers can be used in opposite phase. The Mute mode causes the V/I converters to block the input signal. The input mode pin selects two applications in which the V/I converters can be used.

The ﬁrst application (input mode pin ﬂoating) is used with a supply voltage below 6 V.The input DC level is at ground level (the unused input pin connected to ground) and no input coupling capacitors are necessary. The maximum converter output current is sufﬁcient to obtain an output swing of 3 V (peak).

In the second application with a supply voltage greater than 6 V (input mode pin HIGH), the input mode pin is connected to VP. In this conﬁguration (input DC level is

0.5VP+ 0.6 V) the input source must be coupled with a capacitor and the two unused input pins must be connected via a capacitor to ground, to improve noise performance. This application has a higher quiescent current, because the maximum output current of the V/I converter is higher to obtain an output voltage swing of 9 V (peak).

8.2 Output ampliﬁers

The output ampliﬁers have a transresistance of 50 kΩ, a bandwidth of approximately 750 kHz and a maximum output current of 100 mA. The mid-tap output voltage equals the voltage applied at the non-inverting pin of the output ampliﬁer.This pin is connected to the output of the 0.5VP buffer. This reduces the distortion when the load is connected between an output ampliﬁer and the buffer (because feedback is applied over the load).

8.3 Buffer

The buffer delivers 0.5VPto the output with a maximum output (sink and source) current of 200 mA (peak).

Product data sheets Rev. 03 — 15 May 2006 5 of 36

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8.4 Dynamic quiescent controller

The Dynamic Quiescent Current controller (DQC) gives the advantage of low quiescent current and low distortion. When there are high frequencies in the output signal, the DQC will increase the quiescent current of the two output ampliﬁers and the buffer. This will reduce the crossover distortion that normally occurs at high frequencies and low quiescent current. The DQC gives output currents that are linear with the amplitude and the frequency of the output signals. These currents control the quiescent current.

8.5 Stabilizer

The TDA8559T has a voltage supply range from 1.9 V to 30 V. This range is divided over two supply voltage pins. Pin 16 is 1.9 V to 18 V (breakdown voltage of the process); this pin is preferred for supply voltages less than 18 V. Pin 15 is used for applications where VPis approximately 6 V to 30 V. The stabilizer output is internally connected to the supply voltage pin 16. In the range from 6 V to 18 V, the voltage drop to pin 16 is 1 V.In the range from 18 V to 30 V the stabilizer output voltage (to pin 16) is approximately 17 V.

8.6 Input logic

TDA8559T

Low-voltage stereo headphone ampliﬁer

The MUTE pin (pin 7) selects the Mute mode of the V/I converters. LOW (TTL/CMOS) levelis mute. A voltage between 0.5 V (low level) and 1.5 V (high level) causes a soft mute to operate (no plops). When pin 7 is ﬂoating or greater than 1.5 V it is in the operating condition.

The input mode pin must be connected to VPwhen the supply voltage is greater than 6 V. The input mode logic raises the tail current of the V/I converters and enables the two buffers to bias the inputs of the V/I converters.

8.7 Reference

This circuit supplies all currents needed in this device. With the Standby mode pin 1 (TTL/CMOS), it is possible to switch to the Standby mode and reduce the total quiescent current to below 10 µA.

Product data sheets Rev. 03 — 15 May 2006 6 of 36

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9. Internal circuitry

Table 4. Internal circuits

Symbol Pin Equivalent circuit

STANDBY 1

TDA8559T

Low-voltage stereo headphone ampliﬁer

10 kΩ

kΩ

mgd110

+IN1, −IN1, +IN2 and −IN2

SVRR 4

2, 3, 5 and 6

mgd106

50 kΩ

mgd107

Product data sheets Rev. 03 — 15 May 2006 7 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

Table 4. Internal circuits

…continued

Symbol Pin Equivalent circuit

MUTE 7

MODE 8

1 kΩ

mgd112

250 kΩ

5 kΩ

mgd113

Product data sheets Rev. 03 — 15 May 2006 8 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

Table 4. Internal circuits

…continued

Symbol Pin Equivalent circuit

OUT2 and OUT1 11 and 14

50 Ω

buffer output

BUFFER 12

100 Ω

mgd108

buffer output

and V

15 and 16

2 kΩ

mgd109

mgd111

Product data sheets Rev. 03 — 15 May 2006 9 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

10. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P2(max)

P1(max)

i(max)

ORM

tot

amb

stg

maximum supply voltage (pin 15) - 30 V maximum supply voltage (pin 16) - 18 V maximum input voltage - 18 V peak output current repetitive - 150 mA total power dissipation - 1.19 W ambient temperature −40 +85 °C storage temperature −55 +150 °C virtual junction temperature - 150 °C short-circuiting time VP<10V - 1 h

11. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-a)

thermal resistance from junction to ambient in free air 105

K/W

12. Characteristics

Table 7. Characteristics

VP = 3 V; T

Symbol Parameter Conditions Min Typ Max Unit

DC characteristics

q(tot)

stb

bias

Single-ended stereo application (R

THD total harmonic distortion P

 channel unbalance - - 1 dB

∆G

= 25°C; fi = 1 kHz; unless otherwise speciﬁed.

amb

operating supply voltage

[1]

1.9 3 30 V total quiescent current open load - 2.75 4 mA standby supply current open load - - 10 µA Standby mode voltage standby 0 - 0.5 V

operating 1.5 - 18 V

Mute mode voltage mute 0 - 0.5 V

operating 1.5 - 18 V

input bias current - 100 300 nA

= 32 Ω)

output power THD = 10 % 30 35 - mW

= 20 mW; fi= 1 kHz

= 20 mW; fi=10kHz

[2]

- 0.075 0.15 %

[2]

- 0.1 - % voltage gain 25 26 27 dB small signal roll-off

−1 dB - 750 - kHz

frequency channel separation Rs = 5 kΩ 40--dB

Product data sheets Rev. 03 — 15 May 2006 10 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

Table 7. Characteristics

VP = 3 V; T

= 25°C; fi = 1 kHz; unless otherwise speciﬁed.

amb

…continued

Symbol Parameter Conditions Min Typ Max Unit

no(mute)

noise output voltage noise output voltage in

[3]

-7085µV

[3]

-2030µV mute

o(mute)

output voltage in mute mid-tap voltage 1.4 1.5 1.6 V input impedance 75 100 125 kΩ DC output offset voltage

SVRR supply voltage ripple

[4]

--30µV

[5]

- - 100 mV

[6]

45 55 - dB

rejection

BTL application (R

THD total harmonic distortion P

= 25 Ω)

output power THD = 10 % 125 140 - mW

= 70 mW; fi= 1 kHz - 0.05 0.1 %

= 70 mW; fi= 10 kHz - 0.1 - %

voltage gain 31 32 33 dB small signal roll-off

−1 dB - 750 - kHz

frequency

no(mute)

noise output voltage noise output voltage in

[3]

- 100 120 µV

[3]

-2540µV mute

o(mute)

output voltage in mute input impedance 39 50 61 kΩ DC output offset voltage

SVRR supply voltage ripple

[4]

--40µV

[7]

- - 150 mV

[6]

39 49 - dB

rejection

Line driver application (R

line output voltage 0.1 - 2.9 V

= 1 kΩ)

[1] The supply voltage range at pin VP1 is from 1.9 V to 18 V. Pin VP2 is used for the voltage range from 6 V to 30 V. [2] Measured with low-pass ﬁlter 30 kHz. [3] Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz, unweighted. Rs=5kΩ. [4] RMS output voltage in mute is measured with Vi= 200 mV (RMS); f = 1 kHz. [5] DC output offset voltage is measured between the signal output and the 0.5VP output. [6] The ripple rejection is measured with a ripple voltage of 200 mV (RMS) applied to the positive supply rail (Rs=0kΩ). [7] DC output offset voltage is measured between the two signal outputs.

13. Application information

13.1 General

For applications with a maximum supply voltage of 6 V (input mode low) the input pins need a DC path to ground (see Figure 3 and Figure 4). For applications with supply voltages in the range from 6 V to 18 V (input mode HIGH) the input DC level is

0.5VP+ 0.6 V. In this situation the input conﬁgurations illustrated in Figure 5 and Figure 6 have to be used.

Product data sheets Rev. 03 — 15 May 2006 11 of 36

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The capacitor Cb is recommended for stability improvement.The value may vary between 10 nF and 100 nF. This capacitor should be placed close to the IC between pin 12 and pin 13.

13.2 Heatsink design

The standard application is stereo headphone single-ended with a 32 Ω load impedance to buffer (see Figure 9). The headphone ampliﬁer can deliver a peak output current of 150 mA into the load.

TDA8559T

Low-voltage stereo headphone ampliﬁer

For the SO16 envelope R T

amb

For T

=25°C is:

=60°C the maximum total power dissipation is:

amb

1.2 W

13.3 Test conditions

=25°C; unless otherwise speciﬁed: VP= 3 V, f = 1 kHz, RL=32Ω, Gain = 26 dB,

amb

low input mode, band-pass ﬁlter: 22 Hz to 30 kHz. The total harmonic distortion as a function of frequency was measured with low-pass ﬁlter of 80 kHz. The quiescent current has been measured without any load impedance.

In applications with coupling capacitors towards the load, an electrolytic capacitor has to be connected to pin 4 (SVRR).

1. The graphs for the single-ended application have been measured with the application illustrated in Figure 9; input conﬁguration for input mode low (Figure 4) and input conﬁguration for input mode high (Figure 6).

2. The graphs for the BTL application ‘input mode low’ have been measured with the application circuit illustrated in Figure 11 and the input conﬁguration illustrated in

Figure 4.

3. The graphs for the line-driver application have been measured with the application circuit illustrated in Figure 13 and the input conﬁguration illustrated in Figure 6; input mode high.

th(j-a)

150 25–

-------------------- -

= 105 K/W; the maximum sinewave power dissipation for

105

0.85 W

150 60–

-------------------- -

105

Product data sheets Rev. 03 — 15 May 2006 12 of 36

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13.4 Input conﬁgurations

The IC can be applied in two ways, ‘input mode low’ and ‘input mode high’. This can be selected by the input mode at pin 8:

1. Input mode low: pin 8 ﬂoating: The DC level of the input pins has to be between 0 V and (VP− 1.8 V). A DC path to ground is needed. The maximum output voltage is approximately 2.1 V (RMS). Input conﬁgurations illustrated in Figure 3 and Figure 4 should be used.

2. Input mode high: pin 8 is connected to VP: This mode is intended for supply voltages > 6 V. It can deliver a maximum output voltage of approximately 6 V (RMS) at THD = 0.5 %. The DC voltage level of the input pins is (0.5VP+ 0.6 V). Coupling capacitors are necessary. Input conﬁgurations illustrated in Figure 5 and Figure 6 should be used.

TDA8559T

Low-voltage stereo headphone ampliﬁer

2.2 µF

5 kΩ INPUT

pins 2 and 5

pins 3 and 6

mgd123

pins 2 and 5

INPUT pins 3 and 6

mgd124

VP< 6 V. VP< 6 V.

Fig 3. Input conﬁguration; with input capacitor Fig 4. Input conﬁguration; without input capacitor

pin 2

220 nF

pins 2 and 5 INPUT

pins 3 and 6

mgd125

100 nF

220

100 nF

pin 3

pin 6

pin 5

mgd126

VP< 6 V. At VP< 6 V, combined negative inputs.

Fig 5. Input conﬁguration Fig 6. Input conﬁguration

620 kΩ

47 kΩ

mute

220 nF

mgl135

Fig 7. Soft mute

Product data sheets Rev. 03 — 15 May 2006 13 of 36

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13.5 Standby/mute

1. The Standby mode (V1< 0.5 V) is intended for power saving purpose. Then the total quiescent current is < 10 µA.

2. To avoid ‘pop-noise’ during switch-on or switch-off the IC can be muted (V7< 0.5 V). This can be achieved by a ‘soft-mute’ circuit or by direct control from a microcontroller.

13.6 Application 1: SE with loudspeaker capacitor

The value of capacitor Cr inﬂuences the behavior of the Supply Voltage Ripple Rejection (SVRR) at low frequencies; increasing the value of Cr increases the performance of the SVRR; see Figure 8.

13.7 Application 2: SE to buffer (without loudspeaker capacitor)

This is the basic headphone application. The advantage of this application with respect to application 1, is that it needs only one external component (Cb) in the event of stability problems; see Figure 9.

TDA8559T

Low-voltage stereo headphone ampliﬁer

13.8 Application 3: Improved SE to buffer (without loudspeaker capacitor)

This application is an improved conﬁguration of application 2. The distinction between the two is connecting the loads in opposite phase. This lowers the average current through the SE buffer. It should be noted that a headphone cannot be used because the load requires ﬂoating terminals; see Figure 10.

13.9 Application 4: Bridge tied load mono ampliﬁer

This conﬁguration delivers fourtimes the output power of the SE application with the same supply and load conditions. The capacitor Cr is not required; see Figure 11.

13.10 Application 5: Line driver application

The TDA8559T delivers a virtual rail-to-rail output voltage and is also usable in a low voltage environment, as a line driver. In this application the input needs a DC path to ground, input conﬁgurations illustrated in Figure 3 and Figure 4 should be used. The value of capacitor Cr inﬂuences the behavior of the SVRR at low frequencies; increasing the value of Cr increases the performance of the SVRR; see Figure 12.

13.11 Application 6: Line driver application

The TDA8559T delivers a virtual rail-to-rail output voltage.Because the input mode has to be high, the input conﬁgurations illustrated in Figure 5 and Figure 6 should be used. This application can also be used for headphone application, however, due to the limited output current and the limited output power at the headphone, series resistors have to be used between the output pins and the load; see Figure 13.

The value of capacitor Cr inﬂuences the behavior of the SVRR at low frequencies; increasing the value of Cr increases the performance of the SVRR.

Product data sheets Rev. 03 — 15 May 2006 14 of 36

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13.12 Application 7: Line driver application

With the supply voltage connected to pin 15 it is possible to use the head ampliﬁer above the maximum of 18 V to pin 16. The internal supply voltage will be reduced to a maximum of approximately 17 V.

This will be convenient in applications where the supply voltage is higher than 18 V, however an output voltage swing that reaches the higher supply voltage is not required. the input conﬁgurations illustrated in Figure 5 and Figure 6 should be used. This application can also be used for headphone applications. However, due to the limited output current, series resistors have to be used between the output pins and the load; see

Figure 14.

13.13 Application diagrams

STANDBY

IN1

2 3

REFERENCE

50 kΩ

TDA8559T

Low-voltage stereo headphone ampliﬁer

100 µF

+−

32 Ω

50 kΩ

1615

OUT1

100 nF

220 µF

V/I

−

MUTE

MODE

IN2

22 µF

SVRR

7 8

5 6

kΩ

100 kΩ

INPUT LOGIC

V/I

−

50 kΩ

TDA8559T

GND

DQC

−

50 kΩ

BUFFER

Fig 8. Application 1; single-ended with loudspeaker capacitor

OUT2

BUFFER

220 µF

32 Ω

+−

mgd116

Product data sheets Rev. 03 — 15 May 2006 15 of 36

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STANDBY

IN1

2 3

REFERENCE

50 kΩ

−

50 kΩ

V/I

TDA8559T

Low-voltage stereo headphone ampliﬁer

50 kΩ

−

1615

OUT1

100 nF

+−

32 Ω

100 µF

MUTE

MODE

IN2

SVRR

50 kΩ

INPUT LOGIC

V/I

−

5 6

kΩ

100 kΩ

TDA8559T

DQC

−

50 kΩ

BUFFER

OUT2

BUFFER

32 Ω

+−

GND

Fig 9. Application 2; single-ended to buffer (without loudspeaker capacitor)

mgd117

Product data sheets Rev. 03 — 15 May 2006 16 of 36

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STANDBY

IN1

2 3

REFERENCE

50 kΩ

−

50 kΩ

V/I

TDA8559T

Low-voltage stereo headphone ampliﬁer

100 µF

50 kΩ

1615

OUT1

100 nF

32 Ω

+−

−

MUTE

MODE

IN2

SVRR

50 kΩ

INPUT

LOGIC

V/I

−

5 6

kΩ

100 kΩ

TDA8559T

DQC

−

50 kΩ

BUFFER

32 Ω

OUT2

+−

BUFFER

mgd118

GND

Fig 10. Application 3; improved single-ended to buffer (without loudspeaker capacitor)

Product data sheets Rev. 03 — 15 May 2006 17 of 36

Philips Semiconductors

STANDBY

IN1

2 3

REFERENCE

50 kΩ

TDA8559T

Low-voltage stereo headphone ampliﬁer

50 kΩ

1615

100 nF

OUT1

V/I

−

100 µF

MUTE

MODE

IN2

SVRR

7 8

5 6

100 kΩ

50 kΩ

TDA8559T

kΩ

100 kΩ

Fig 11. Application 4; BTL mono ampliﬁer

INPUT

LOGIC

V/I

−

GND

25 Ω

OUT2

BUFFER

mgd119

DQC

−

50 kΩ

BUFFER

Product data sheets Rev. 03 — 15 May 2006 18 of 36

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STANDBY

IN1

2 3

REFERENCE

50 kΩ

TDA8559T

Low-voltage stereo headphone ampliﬁer

100 µF

1 kΩ

50 kΩ

1615

OUT1

100 nF

10 µF

V/I

−

22 µF

MUTE

MODE

IN2

SVRR

50 kΩ

INPUT

LOGIC

V/I

−

5 6

kΩ

100 kΩ

TDA8559T

GND

VP = 1.9 V to 6 V.

Fig 12. Application 5; line driver application

DQC

−

50 kΩ

BUFFER

OUT2

BUFFER

10 µF

1 kΩ

mgd120

Product data sheets Rev. 03 — 15 May 2006 19 of 36

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STANDBY

100 nF

IN1

2 3

REFERENCE

50 kΩ

TDA8559T

Low-voltage stereo headphone ampliﬁer

100 µF

1 kΩ

50 kΩ

1615

100 nF

OUT1

10 µF

V/I

−

220

100 nF

IN2

22 µF

MUTE

MODE

SVRR

50 kΩ

INPUT LOGIC

V/I

−

5 6

kΩ

100 kΩ

TDA8559T

VP = 6 V to 18 V.

Fig 13. Application 6; line driver application

GND

DQC

−

50 kΩ

BUFFER

OUT2

BUFFER

10 µF

1 kΩ

mgd121

Product data sheets Rev. 03 — 15 May 2006 20 of 36

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STANDBY

100 nF

IN1

2 3

REFERENCE

50 kΩ

TDA8559T

Low-voltage stereo headphone ampliﬁer

50 kΩ

1615

100

100 µF

OUT1

10 µF

−

V/I

−

220

100 nF

IN2

SVRR

MUTE

MODE

50 kΩ

INPUT LOGIC

V/I

−

5 6

kΩ

100 kΩ

TDA8559T

GND

VP = 6 V to 30 V.

Fig 14. Application 7; line driver application

DQC

−

50 kΩ

BUFFER

OUT2

10 µF

BUFFER

POWER

AMPLIFIER

−

mgd122

Product data sheets Rev. 03 — 15 May 2006 21 of 36

Philips Semiconductors

13.14 Printed-circuit board layout

TDA8559T

Low-voltage stereo headphone ampliﬁer

INP2

INP1

220 nF

MUTE

Std. by

TDA8559T

100 nF

22 µF

5.1 kΩ

Inp. mode

220 µF

Out2

Buf.

Out1

TDA8559T

100 µF

D&A AUDIO POWER

QC - NIJMEGEN

+Vp

001aae801

Top view component side.

Fig 15. Printed-circuit board layout

The Printed-Circuit Board (PCB) layout supports all applications as illustrated in Figure 8 to Figure 14. The PCB layout has been assembled for input conﬁguration as shown in

Figure 3, and output and supply conﬁguration as shown in Figure 8 for a maximum supply

voltage of 6 V.

13.15 Response curves for low input mode

(mA)

020

(1)

(2)

12 16

mda089

VP (V)

(V)

010 30

(1) High mode. (2) Low mode.

Fig 16. Iq as a function of VP (stereo headphone) Fig 17. VP1 as a function of VP2 (stereo headphone)

mda090

(V)

Product data sheets Rev. 03 — 15 May 2006 22 of 36

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TDA8559T

Low-voltage stereo headphone ampliﬁer

mda091

mda092

THD

(%)

−

−2

−

−2

f = 1 kHz. (1) VP = 3 V, RL = 32 Ω. (2) VP = 5 V, RL = 32 Ω.

(2) (1)

−

(W)

THD

(%)

−1

−2

10 10

RL = 32 Ω. (1) VP = 5 V, THD = 50 mW. (2) VP = 3 V, THD = 20 mW.

(1)

(2)

f (Hz)

Fig 18. THD as a function of Po (stereo headphone) Fig 19. THD as a function of frequency (stereo

headphone)

−2

(A)

−3

−4

−5

−6

−7

(1) (2) (3)

(1) VP = 12 V. (2) VP = 3 V and 6 V. (3) VP = 3 V, 6 V and 12 V.

Fig 20. Iq as a function of V

mda093

stb

321

(V)

−1

−2

−3

−4

−5

(1) VP = 3 V. (2) VP = 12 V.

(stereo headphone) Fig 21. Vo as a function of V

stb

mda094

(2) (1)

2.50 0.5 1 1.5 2

(V)

mute

(stereo headphone)

mute

Product data sheets Rev. 03 — 15 May 2006 23 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

mda095

f (Hz)

(dB)

−20

−40

−60

−80

VP = 3 V, Vi = 20 mV. VP = 3 V, Vi = 20 mV.

Fig 22. Channel separation as a function of frequency

(stereo headphone)

SVRR

(dB)

−20

mda097

mda096

f (Hz)

∆Gr (dB)

0.5

−0.5

−1 10

Fig 23. Channel unbalance as a function of frequency

(stereo headphone)

0.4

(W)

0.3

mda098

−40

−60

−80

f (Hz)

0.2

(1)

(2)

0.1

04 12

VP (V)

VP = 3 V, Rs = 0 Ω, Vr = 0.2 V (RMS). (1) RL = 32 Ω, THD = 10 %.

(2) RL = 32 Ω, THD = 0.5 %.

Fig 24. SVRR as a function of frequency (stereo

Fig 25. Po as a function of VP (stereo headphone)

headphone)

Product data sheets Rev. 03 — 15 May 2006 24 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

1.5

(W)

0.5

(2) (1)

812

mda099

VP (V)

(1) RL = 25 Ω. (2) RL = 32 Ω.

Fig 26. Total worst case power dissipation as a

function of supply voltage (SE) (stereo headphone)

THD

(%)

−1

−2

−3

−2

−1

mda130

(2) (1)

Po (W)

f = 1 kHz. (1) VP = 3 V, RL = 25 Ω. (2) VP = 5 V, RL = 25 Ω.

Fig 27. THD as a function of Po (BTL mono)

THD

(%)

−1

(1)

(2)

−2

10 10

(1) VP = 3 V, RL = 25 Ω, THD = 70 mW.

mda131

f (Hz)

SVRR

(dB)

−20

−40

−60

−80

VP = 3 V, Rs = 0 Ω, Vr = 0.2 V (RMS).

mda132

f (Hz)

(2) VP = 5 V, RL = 25 Ω, THD = 150 mW.

Fig 28. THD as a function of frequency (BTL mono) Fig 29. SVRR as a function of frequency (BTL mono)

Product data sheets Rev. 03 — 15 May 2006 25 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

(W)

0.75

(2) (1)

0.5

0.25

04 12

mda133

VP (V)

(1) THD = 10 %, RL = 25 Ω. (2) THD = 0.5 %, RL = 25 Ω.

1.6

(W)

1.2

0.8

0.4

(1) RL = 25 Ω. (2) RL = 32 Ω

812

mda134

(2) (1)

VP (V)

Fig 30. Po as a function of supply voltage (BTL mono) Fig 31. Total worst case power dissipation as a

function of supply voltage (BTL mono)

13.16 Response curves for high input mode

0.8

(W)

0.6

0.4

0.2

048

(1) RL = 32 Ω, THD = 10 %. (2) RL = 32 Ω, THD = 0.5 %.

mda119

(2) (1)

VP (V)

(W)

1.6

1.2

0.8

0.4

048

(2) (1)

(1) RL = 25 Ω. (2) RL = 32 Ω.

mda120

VP (V)

Fig 32. Po as a function of VP (SE) (BTL mono) Fig 33. Total worst case power dissipation as a

function of supply voltage (SE) (stereo

headphone)

Product data sheets Rev. 03 — 15 May 2006 26 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

THD

(%)

−1

−2

−3

−2

−1

mda121

Po (W)

THD

(%)

−1

−2

10 10

(1) (2)

mda122

f (Hz)

VP = 10 V, RL = 32 Ω, f = 1 kHz. VP = 10 V, RL = 32 Ω.

(1) Po = 100 mW. (2) Po = 50 mW.

Fig 34. THD as a function of Po (stereo headphone) Fig 35. THD as a function of frequency (stereo

headphone)

mda123

f (Hz)

(dB)

−20

−40

−60

−80

VP = 10 V, Vi = 20 mV. VP = 10 V, Rs = 0 Ω, Vr = 0.2 V (RMS).

Fig 36. Channel separation as a function of frequency

(stereo headphone)

mda124

SVRR

(dB)

−20

−40

−60

−80

f (Hz)

Fig 37. SVRR as a function of frequency (stereo

headphone)

Product data sheets Rev. 03 — 15 May 2006 27 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

THD

(%)

−1

−2

−1

(1) VP = 12 V, RL = 1 kΩ.

mda125

(2)

(1)

110

Vo (V)

THD

(%)

−1

−2

10 10

VP = 12 V, Vo = 1 V.

mda126

f (Hz)

(2) VP = 18 V, RL = 1 kΩ.

Fig 38. THD as a function of Vo (stereo line driver) Fig 39. THD as a function of frequency (stereo line

driver)

(dB)

−20

mda127

SVRR

(dB)

−20

mda128

−40

−60

−80

f (Hz)

−40

−60

−80

f (Hz)

VP = 12 V, Vi = 20 mV. VP = 12 V, Rs = 0 Ω, Vr = 0.2 V (RMS).

Fig 40. Channel separation as a function of frequency

(stereo line driver)

Fig 41. SVRR as a function of frequency (stereo line

driver)

Product data sheets Rev. 03 — 15 May 2006 28 of 36

Philips Semiconductors

TDA8559T

Low-voltage stereo headphone ampliﬁer

(1) THD = 10 %, RL = 1 kΩ. (2) THD = 0.5 %, RL = 1 kΩ.

Fig 42. Vo as a function of VP (stereo line driver)

14. Test information

(V)

(1)

020

(2)

12 16

mda129

VP (V)

14.1 Quality information

The

General Quality Speciﬁcation for Integrated Circuits, SNW-FQ-611

is applicable.

Product data sheets Rev. 03 — 15 May 2006 29 of 36

Philips Semiconductors

15. Package outline

TDA8559T

Low-voltage stereo headphone ampliﬁer

SO16: plastic small outline package; 16 leads; body width 3.9 mm

pin 1 index

w M

SOT109-1

detail X

v M

(A )

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

OUTLINE

VERSION

SOT109-1

A1A2A3b

max.

0.25

1.75

0.10

0.010

0.069

0.004

1.45

1.25

0.057

0.049

IEC JEDEC JEITA

076E07 MS-012

0.25

0.01

0.49

0.36

0.019

0.014

0.25

0.19

0.0100

0.0075

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

(1)E(1) (1)

10.0

9.8

0.39

0.38

REFERENCES

eHELLpQZywv θ

4.0

3.8

0.16

0.15

1.27

0.05

6.2

5.8

0.244

0.228

1.05

0.041

1.0

0.4

0.039

0.016

0.7

0.25

0.6

0.028

0.01 0.004

0.020

EUROPEAN

PROJECTION

0.25 0.1

0.01

0.7

0.3

0.028

0.012

ISSUE DATE

99-12-27 03-02-19

Fig 43. Package outline SOT109-1 (SO16)

Product data sheets Rev. 03 — 15 May 2006 30 of 36

Philips Semiconductors

16. Soldering

16.1 Introduction to soldering surface mount packages

There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for ﬁne pitch SMDs. In these situations reﬂow soldering is recommended.

16.2 Reﬂow soldering

Reﬂow soldering requires solder paste (a suspension of ﬁne solder particles, ﬂux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing.

Several methods exist for reﬂowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method.

Typical reﬂow temperatures range from 215 °Cto260°C depending on solder paste material. The peak top-surface temperature of the packages should be kept below:

TDA8559T

Low-voltage stereo headphone ampliﬁer

Table 8. SnPb eutectic process - package peak reﬂow temperatures (from

July 2004)

Package thickness Volume mm3 < 350 Volume mm3≥ 350

< 2.5 mm 240 °C+0/−5 °C 225 °C+0/−5 °C ≥ 2.5 mm 225 °C+0/−5 °C 225 °C+0/−5 °C

Table 9. Pb-free process - package peak reﬂow temperatures (from

2004)

Package thickness Volume mm3 < 350 Volume mm3 350 to

< 1.6 mm 260 °C + 0 °C 260 °C + 0 °C 260 °C + 0 °C

1.6 mm to 2.5 mm 260 °C + 0 °C 250 °C + 0 °C 245 °C + 0 °C ≥ 2.5 mm 250 °C + 0 °C 245 °C + 0 °C 245 °C + 0 °C

Moisture sensitivity precautions, as indicated on packing, must be respected at all times.

16.3 Wave soldering

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

To overcome these problems the double-wave soldering method was speciﬁcally developed.

2000

J-STD-020C

Volume mm3 > 2000

July

If wave soldering is used the following conditions must be observed for optimal results:

• Use a double-wave soldering method comprising a turbulent wave with high upward

pressure followed by a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):

Product data sheets Rev. 03 — 15 May 2006 31 of 36

Philips Semiconductors

– larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be

– smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the

The footprint must incorporate solder thieves at the downstream end.

• For packages with leads on four sides, the footprint must be placed at a 45° angle to

the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners.

During placement and before soldering, the package must be ﬁxed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively.

A mildly-activated ﬂux will eliminate the need for removal of corrosive residues in most applications.

TDA8559T

Low-voltage stereo headphone ampliﬁer

parallel to the transport direction of the printed-circuit board;

transport direction of the printed-circuit board.

16.4 Manual soldering

Fix the component by ﬁrst soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the ﬂat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C.

When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 °C and 320 °C.

16.5 Package related soldering information

Table 10. Suitability of surface mount IC packages for wave and reﬂow soldering methods

Package

BGA, HTSSON..T SSOP..T

DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS

PLCC LQFP, QFP, TQFP not recommended SSOP, TSSOP, VSO, VSSOP not recommended CWQCCN..L

[1]

[3]

, TFBGA, VFBGA, XSON

[5]

, SO, SOJ suitable suitable

, LBGA, LFBGA, SQFP,

[8]

, PMFP

[9]

, WQCCN..L

[8]

Soldering method Wave Reﬂow

not suitable suitable

not suitable

not suitable not suitable

[2]

[4]

[5][6] [7]

suitable

suitable suitable

[1] For more detailed information on the BGA packages refer to the

order a copy from your Philips Semiconductors sales ofﬁce.

[2] All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the

maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the

Packages; Section: Packing Methods

Product data sheets Rev. 03 — 15 May 2006 32 of 36

(LF)BGA Application Note

Data Handbook IC26; Integrated Circuit

(AN01026);

Philips Semiconductors

[3] These transparent plastic packages are extremely sensitive to reﬂow soldering conditions and must on no

account be processed through more than one soldering cycle or subjected to infrared reﬂow soldering with peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reﬂow oven. The package body peak temperature must be kept as low as possible.

[4] These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the

solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface.

[5] If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave

direction. The package footprint must incorporate solder thieves downstream and at the side corners.

[6] Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is

deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm.

[7] Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger

than 0.65 mm; it is deﬁnitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

[8] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered

pre-mounted on ﬂex foil. However, the image sensor package can be mounted by the client on a ﬂex foil by using a hot bar soldering process. The appropriate soldering proﬁle can be provided on request.

[9] Hot bar soldering or manual soldering is suitable for PMFP packages.

TDA8559T

Low-voltage stereo headphone ampliﬁer

Product data sheets Rev. 03 — 15 May 2006 33 of 36

Philips Semiconductors

Low-voltage stereo headphone ampliﬁer

TDA8559T

17. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

TDA8559_3 20060515 Product data sheet - TDA8559_2 Modiﬁcations:

TDA8559_2 (9397 750 02066)

TDA8559_1 (9397 750 00546)

• Theformatof this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

• DIP16 (SOT39-1) package removed

19970627 Product speciﬁcation - TDA8559_1

19960102 Preliminary speciﬁcation - -

Product data sheets Rev. 03 — 15 May 2006 34 of 36

Philips Semiconductors

18. Legal information

18.1 Data sheet status

TDA8559T

Low-voltage stereo headphone ampliﬁer

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s)described inthis document may havechanged since this document waspublished andmay differin case of multiple devices. Thelatest product status

information is available on the Internet at URL

[1][2]

Product status

18.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information includedherein and shallhave no liabilityfor the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with thesame product typenumber(s) and title.A short data sheet is intended for quickreference only and shouldnot be relied upon tocontain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales ofﬁce. In case of any inconsistency orconﬂict with the short data sheet, the full data sheet shall prevail.

18.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all informationsupplied prior to the publication hereof.

Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

[3]

http://www.semiconductors.philips.com.

Deﬁnition

malfunction of a Philips Semiconductors product canreasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute MaximumRatings System of IEC 60134)may cause permanent damage tothe device. Limitingvalues are stress ratingsonly and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercialsale, as published at

http://www.semiconductors.philips.com/proﬁle/terms, including those

pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. Incase of any inconsistency orconﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication ofany license under any copyrights,patents or other industrial or intellectual property rights.

18.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks are the property of their respective owners.

19. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Product data sheets Rev. 03 — 15 May 2006 35 of 36

Philips Semiconductors

20. Contents

TDA8559T

Low-voltage stereo headphone ampliﬁer

1 General description . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

5 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Pinning information. . . . . . . . . . . . . . . . . . . . . . 4

7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Functional description . . . . . . . . . . . . . . . . . . . 5

8.1 V/I converters . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8.2 Output ampliﬁers. . . . . . . . . . . . . . . . . . . . . . . . 5

8.3 Buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8.4 Dynamic quiescent controller . . . . . . . . . . . . . . 6

8.5 Stabilizer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8.6 Input logic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8.7 Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 10

11 Thermal characteristics. . . . . . . . . . . . . . . . . . 10

12 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Application information. . . . . . . . . . . . . . . . . . 11

13.1 General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Heatsink design . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Test conditions . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Input conﬁgurations . . . . . . . . . . . . . . . . . . . . 13

13.5 Standby/mute . . . . . . . . . . . . . . . . . . . . . . . . . 14

13.6 Application 1: SE with loudspeaker capacitor. 14

13.7 Application 2: SE to buffer (without

loudspeaker capacitor) . . . . . . . . . . . . . . . . . 14

13.8 Application 3: Improved SE to buffer (without

loudspeaker capacitor) . . . . . . . . . . . . . . . . . . 14

13.9 Application 4: Bridge tied load mono ampliﬁer 14

13.10 Application 5: Line driver application . . . . . . . 14

13.11 Application 6: Line driver application . . . . . . . 14

13.12 Application 7: Line driver application . . . . . . . 15

13.13 Application diagrams . . . . . . . . . . . . . . . . . . . 15

13.14 Printed-circuit board layout. . . . . . . . . . . . . . . 22

13.15 Response curves for low input mode . . . . . . . 22

13.16 Response curves for high input mode . . . . . . 26

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . 29

14.1 Quality information . . . . . . . . . . . . . . . . . . . . . 29

15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 30

16 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

16.1 Introduction to soldering surface mount

packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

16.2 Reﬂow soldering. . . . . . . . . . . . . . . . . . . . . . . 31

16.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 31

16.4 Manual soldering . . . . . . . . . . . . . . . . . . . . . . 32

16.5 Package related soldering information. . . . . . 32

17 Revision history . . . . . . . . . . . . . . . . . . . . . . . 34

18 Legal information . . . . . . . . . . . . . . . . . . . . . . 35

18.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 35

18.2 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

18.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 35

18.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 35

19 Contact information . . . . . . . . . . . . . . . . . . . . 35

20 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com.

Date of release: 15 May 2006

Document identifier: TDA8559_3

Philips TDA8559T User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1. General description

2. Features

3. Applications

4. Quick reference data

5. Ordering information

6. Block diagram

7. Pinning information

7.1 Pinning

7.2 Pin description

8. Functional description

8.1 V/I converters

8.3 Buffer

8.4 Dynamic quiescent controller

8.5 Stabilizer

8.6 Input logic

8.7 Reference

9. Internal circuitry

10. Limiting values

11. Thermal characteristics

12. Characteristics

13. Application information

13.1 General

13.2 Heatsink design

13.3 Test conditions

13.5 Standby/mute

13.13 Application diagrams

13.14 Printed-circuit board layout

13.15 Response curves for low input mode

13.16 Response curves for high input mode

14. Test information

14.1 Quality information

15. Package outline

16. Soldering

16.1 Introduction to soldering surface mount packages

16.3 Wave soldering

16.4 Manual soldering

16.5 Package related soldering information

17. Revision history

18. Legal information

18.1 Data sheet status

18.3 Disclaimers

18.4 Trademarks

19. Contact information

20. Contents