TDA6107JFDBS9MPFplastic DIL-bent-SIL medium power package with fin; 9 leadsSOT111-1
NAMEDESCRIPTIONVERSION
GENERAL DESCRIPTION
The TDA6107JF includes three video output amplifiers
andis intendedto drivethethree cathodesof acolourCRT
directly. The device is contained in a plastic DIL-bent-SIL
9-pin medium power (DBS9MPF) package, and uses
high-voltage DMOS technology.
To obtain maximum performance, the amplifier should be
used with black-current control.
PACKAGE
2002 Oct 182
Page 3
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
BLOCK DIAGRAM
handbook, full pagewidth
V
,
i(1)
1, 2, 3
V
,
i(2)
V
i(3)
CURRENT
SOURCE
MIRROR 1
THERMAL
PROTECTION
CIRCUIT
R
i
R
a
3×
VIP
REFERENCE
MIRROR 3
TDA6107JF
DIFFERENTIAL
MIRROR 2
MIRROR 4
STAGE
V
DD
6
MIRROR 5
CASCODE 1
3×
V
1×
1×
R
f
CASCODE 2
9, 8, 7
oc(3),
V
oc(2),
V
oc(1)
5
I
o(m)
Fig.1 Block diagram (one amplifier shown).
PINNING
SYMBOLPINDESCRIPTION
V
i(1)
V
i(2)
V
i(3)
1inverting input 1
2inverting input 2
3inverting input 3
GND4ground (fin)
I
V
V
V
V
om
DD
oc(3)
oc(2)
oc(1)
5black-current measurement output
6supply voltage
7cathode output 3
8cathode output 2
9cathode output 1
handbook, halfpage
V
1
i(1)
V
2
i(2)
V
3
i(3)
GND
4
I
5
om
TDA6107JF
V
6
DD
V
7
oc(3)
V
8
oc(2)
V
9
oc(1)
MBL524
Fig.2 Pin configuration.
4
MBL525
2002 Oct 183
Page 4
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages measured with respect to pin 4
(ground); currents as specified in Fig.1; unless otherwise specified.
SYMBOLPARAMETERMIN.MAX.UNIT
V
DD
V
i
V
o(m)
V
oc
I
ocsm(L)
I
ocsm(H)
T
stg
T
j
V
es
supply voltage0250V
input voltage at pins 1 to 3012V
measurement output voltage06V
cathode output voltage0V
LOW non-repetitive peak cathode output current at a flashover
03A
DD
V
discharge of 100 µC
HIGH non-repetitive peak cathode output current at a flashover
06A
discharge of 100 nC
storage temperature−55+150°C
junction temperature−20+150°C
electrostatic handling voltage
Human Body Model (HBM)−3000V
Machine Model (MM)−300V
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices”
).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part D”
is applicable and can be found in the
“Quality reference Handbook”
.
The handbook can be ordered using the code 9397 750 00192.
2002 Oct 184
Page 5
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
THERMAL CHARACTERISTICS
SYMBOLPARAMETERCONDITIONSVALUEUNIT
R
th(j-a)
R
th(j-fin)
R
th(h-a)
Note
1. An external heatsink is necessary.
P
(W)
8
tot
6
handbook, halfpage
thermal resistance from junction to ambient56K/W
thermal resistance from junction to finnote 111K/W
thermal resistance from heatsink to ambient18K/W
Thermal protection
The internal thermal protectioncircuit gives a decrease of
MBH989
the slew rate at high temperatures: 10% decrease at
130 °C and30% decreaseat 145 °C(typical valueson the
spot of the thermal protection circuit).
(1)
4
2
0
−40
(1) Infinite heatsink.
(2) No heatsink.
0
Fig.3 Power derating curves.
(2)
4080160120
T
amb
(°C)
handbook, halfpage
outputs
5 K/W
thermal protection circuit
6 K/W
fin
MGK279
Fig.4 Equivalent thermal resistance network.
2002 Oct 185
Page 6
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
CHARACTERISTICS
Operating range: Tj= −20 to +150 °C; VDD= 180 to 210 V. Test conditions: T
V
o(c1)=Vo(c2)=Vo(c3)
=1⁄2VDD; CL= 10 pF (CL consists of parasitic and cathode capacitance); R
(measured in test circuit of Fig.8); unless otherwise specified.
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
I
q
V
ref(int)
quiescent supply current5.66.67.6mA
internal reference voltage
(input stage)
R
i
input resistance−3.6−kΩ
Ggain of amplifier47.551.055.0
∆Ggain difference−2.50+2.5
V
O(oc)
nominal output voltage at
Ii=0µA116129142V
pins 7, 8 and 9 (DC value)
∆V
O(oc)(offset)
differential nominal output
Ii=0µA−05V
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)
∆V
o(c)(T)
output voltage temperature
drift at pins 7, 8 and 9
∆V
o(c)(T)(offset)
differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9
I
o(m)(offset)
∆I
/∆I
o(m)
offsetcurrent ofmeasurement
output (for three channels)
linearity of current transfer
o(c)
(for three channels)
I
=0µA;
o(c)
1.5 V < Vi< 5.5 V;
1.8 V < V
−100 µA<I
o(m)
o(c)
<6V
< 100 µA;
1.5 V < Vi< 5.5 V;
1.8 V < V
−100 µA ≤ I
o(m)
<6V
<10mA;
o(c)
1.5 V < Vi< 5.5 V;
I
o(c)(max)
maximum peak output current
1.8 V < V
50V<V
<4V
o(m)
o(c)<VDD
− 50 V−20−mA
(pins 7, 8 and 9)
V
o(c)(min)
V
o(c)(max)
B
S
minimum output voltage
(pins 7, 8 and 9)
maximum output voltage
(pins 7, 8 and 9)
small signal bandwidth
Vi= 7.0 V; at I
o(c)
= 0 mA;
note 1
Vi= 1.0 V; at I
o(c)
= 0 mA;
note 1
V
= 60 V (p-p)−5.5−MHz
o(c)
(pins 7, 8 and 9)
B
L
large signal bandwidth
V
= 100 V (p-p)−4.5−MHz
o(c)
(pins 7, 8 and 9)
t
Pco
cathode output propagation
time 50% input to 50% output
(pins 7, 8 and 9)
difference in cathode output
propagationtime 50% inputto
50% output (pins 7 and 8,
7 and 9 and 8 and 9)
cathode output rise time
10% output to 90% output
(pins 7, 8 and 9)
cathode output fall time
90% output to 10% output
(pins 7, 8 and 9)
settling time 50% input to
99% < output < 101%
(pins 7, 8 and 9)
50Vto(V
DD
− 50 V)
(pins 7, 8 and 9)
cathode output voltage
overshoot (pins 7, 8 and 9)
DC crosstalk between
channels
V
= 100 V (p-p) square
o(c)
wave; f < 1 MHz;
tr=tf=40ns
(pins 1, 2 and 3)
V
= 50 to 150 V square
o(c)
wave; f < 1 MHz; tf=40ns
(pins 1, 2 and 3); see Fig.6
V
= 150 to 50 V square
o(c)
wave; f < 1 MHz; tr=40ns
(pins 1, 2 and 3); see Fig.7
V
= 100 V (p-p) square
o(c)
wave; f < 1 MHz;
tr=tf=40ns
(pins 1, 2 and 3);
see Figs 6 and 7
Vi= 4 V (p-p) square wave;
f < 1 MHz; tr=tf=40ns
(pins 1, 2 and 3)
V
= 100 V (p-p) square
o(c)
wave; f < 1 MHz;
tr=tf=40ns
(pins 1, 2 and 3);
see Figs 6 and 7
−100+10ns
6791113ns
6791113ns
−−350ns
−900−V/µs
−2−%
−−50−dB
Notes
1. See also Fig.5 for the typical DC-to-DC transfer of VIto V
O(oc)
.
2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
2002 Oct 187
Page 8
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
200
handbook, halfpage
V
o(c)
(V)
160
129
120
80
40
0
0
2.5
2
46
Fig.5 Typical DC-to-DC transfer of VIto VOC.
MBH988
V
(V)
i
2002 Oct 188
Page 9
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
4.04
V
i
(V)
3.08
2.12
t
st
Ov (in %)
150
140
V
o(c)
(V)
100
60
50
t
o(r)
t
Pco
t
151
149
t
MGK280
Fig.6 Output voltage (pins 7, 8 and 9) rising edge as a function of the AC input signal.
2002 Oct 189
Page 10
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
4.04
V
i
(V)
3.08
2.12
t
st
150
140
V
o(c)
(V)
100
Ov (in %)
60
50
t
o(f)
t
Pco
t
51
49
t
MGK281
Fig.7 Output voltage (pins 7, 8 and 9) falling edge as a function of the AC input signal.
2002 Oct 1810
Page 11
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
Cathode output
The cathode output is protected against peak current
(caused by positive voltage peaks during high-resistance
flash) of3 A maximum with acharge content of 100 µC
(1)
The cathode is also protected against peak currents
(caused by positive voltage peaks during low-resistance
flash) of6 A maximum with acharge content of 100 nC
(1)
TheDC voltageof VDD(pin 6)must bewithin theoperating
range of 180 to 210 V during the peak currents.
Flashover protection
The TDA6107JF incorporates protection diodes against
CRT flashover dischargesthat clamp the cathodesoutput
voltage up to a maximum of VDD+V
diode
.
To limit the diode current an external 1.5 kΩ carbon
high-voltage resistorin series with thecathode output and
a 2 kV spark gap are needed (for this resistor value, the
CRT has to be connected to the main PCB
(1)
.
VDD must be decoupled to GND:
1. With a capacitor >20 nF with good HF behaviour
(e.g. foil); this capacitor must be placed as close as
possible to pins 6 and 4, but definitely within 5 mm.
2. With a capacitor >3.3 µF on the picture tube base
print, depending on the CRT size.
Switch-off behaviour
Theswitch-off behaviourofthe TDA6107JF iscontrollable.
This isbecause the output pinsof the TDA6107JF arestill
under control of the input pins for low power supply
voltages (approximately 30 V and higher).
Dissipation
Regarding dissipation, distinction must first be made
between staticdissipation (independent of frequency) and
.
dynamic dissipation (proportional to frequency).
The static dissipation of the TDA6107JF is due to voltage
supply currentsand load currentsin the feedbacknetwork
.
and CRT.
The static dissipation P
stat
V
DDIDD
P
3VOCIOC××+×=
equals:
stat
Where:
= supply voltage
V
DD
IDD= supply current
VOC= DC value of cathode voltage
IOC= DC value of cathode current.
The dynamic dissipation P
P
3VDDCLC
dyn
equals:
dyn
+()f
int
V
i
oc(p-p)
δ×××××=
Where:
= load capacitance
C
L
C
= internal load capacitance (≈4 pF)
int
fi= input frequency
V
= output voltage (peak-to-peak value)
oc(p-p)
δ = non-blanking duty cycle.
The IC must be mounted on the picture tube base print to
minimize the load capacitance CL.
Bandwidth
The addition of the flash resistor produces a decreased
bandwidth and increases the rise and fall times; see
“Application Note AN96072”
.
(1)External protectionagainst highercurrents isdescribed
in
“Application Note AN96072”
.
2002 Oct 1811
Page 12
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
TEST AND APPLICATION INFORMATION
handbook, full pagewidth
V
i(1)
V
i(2)
V
i(3)
C1
22 µF
C2
22 nF
C3
22 µF
C4
22 nF
C5
22 µF
C6
22 nF
V
DD
20 nFC710 µF
C10
6.8 pF
C11
136 pF
C13
6.8 pF
C14
136 pF
C16
6.8 pF
C17
136 pF
V
o(m)
4 V
I
I
I
of
om
of
om
of
om
V
V
V
oc(1)
oc(2)
oc(3)
6
9
C9
3.2 pF
8
C12
3.2 pF
7
C15
3.2 pF
5
J1
R
i
1
R
a
J2
R
i
2
R
a
J3
R
i
3
R
a
VIP
REFERENCE
R
f
V
1
R
f
V
2
R
f
V
3
TDA6107JF
4
C8
R1
2 MΩ
probe 1
R2
100 kΩ
R3
2 MΩ
probe 2
R4
100 kΩ
R5
2 MΩ
probe 3
R6
100 kΩ
Current sources J1, J2 and J3 are to be tuned so that V
of pins 9, 8 and 7 is set to 100 V.
o(c)
Fig.8 Test circuit.
2002 Oct 1812
MBL526
Page 13
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
INTERNAL CIRCUITRY
handbook, full pagewidth
1, 2, 3
5
esd
to black current
measurement circuit
6.8 Vesd
to black current
measurement circuit
to cascode
stage
from
control
circuit
from black
current
measurement
circuit
from
control
circuit
GND
46
V
DD
TDA6107JF
(1)
from
input
circuit
esd
from
input
circuit
measurement circuit
esd
V
bias
esd
esd
to black current
to black current
measurement circuit
flash
7, 8, 9
MBL527
(1) All pins have an energy protection for positive or negative overstress situations.
Fig.9 Internal pin configuration.
2002 Oct 1813
Page 14
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
PACKAGE OUTLINE
DBS9MPF: plastic DIL-bent-SIL medium power package with fin; 9 leads
D
D
1
q
P
pin 1 index
P
1
q
2
q
1
SOT111-1
A
2
Q
A
3
A
A
4
E
seating plane
19
Z
b
e
2
b
b
1
0510 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT AA
mm
2
max.max.
18.5
3.7
17.8
8.7
8.0
b
bcD
A
3
4
15.5
1.40
15.1
1.14
b
1
2
0.67
1.40
0.50
1.14
0.48
0.38
(1)
21.8
21.4
(1)
D
E
12
21.4
6.48
20.7
6.20
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
IEC JEDEC EIAJ
REFERENCES
SOT111-1
L
w M
eLPP
2.54
e
2.54
3.9
3.4
2.75
2.50
1
3.4
1.75
3.2
1.55
Q
c
q
q
1
15.1
4.4
14.9
4.2
EUROPEAN
PROJECTION
e
2
θ
q
w
2
5.9
0.25
5.7
ISSUE DATE
92-11-17
95-03-11
Z
1.0
(1)
θ
o
65
o
55
2002 Oct 1814
Page 15
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering.A morein-depth accountofsoldering ICscan be
found in our
Packages”
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
DBS, DIP, HDIP, SDIP, SILsuitablesuitable
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may benecessary immediately after solderingto keep the
temperature within the permissible limit.
Manual soldering
Apply the solderingiron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
SOLDERING METHOD
DIPPINGWAVE
(1)
stg(max)
). If the
2002 Oct 1815
Page 16
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
IObjective dataDevelopmentThis data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
IIPreliminary data QualificationThis data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
IIIProduct dataProductionThis data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For datasheets describingmultiple type numbers,the highest-levelproduct status determinesthe data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limiting values givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyotherconditions abovethose given inthe
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplicationswill be
suitable for the specified use without further testing or
modification.
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance.When theproduct isin full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2002 Oct 1816
Page 17
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
NOTES
2002 Oct 1817
Page 18
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
NOTES
2002 Oct 1818
Page 19
Philips SemiconductorsProduct specification
Triple video output amplifierTDA6107JF
NOTES
2002 Oct 1819
Page 20
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com.Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
The information presented in thisdocument does not form part of anyquotation or contract, is believedto be accurate and reliable and maybe changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands753504/02/pp20 Date of release: 2002 Oct 18Document order number: 9397 750 10545
SCA74
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