Philips TDA6107JF User Manual

INTEGRATED CIRCUITS

DATA SH EET

TDA6107JF

Triple video output amplifier

Product specification 2002 Oct 18

Philips Semiconductors Product specification

Triple video output amplifier TDA6107JF

FEATURES

• Typical bandwidth of 5.5 MHz for an output signal of
60 V (p-p)

• High slew rate of 900 V/µs

• No external components required

• Very simple application

• Single supply voltage of 200 V

• Internal reference voltage of 2.5 V

• Fixed gain of 50

• Black-Current Stabilization (BCS) circuit with voltage

window from 1.8 to 6 V and current window from

−100 µA to 10 mA

• Thermal protection

• Internal protectionagainstpositive flashoverdischarges

appearing on the CRT.

ORDERING INFORMATION

TYPE

NUMBER

TDA6107JF DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1

NAME DESCRIPTION VERSION

GENERAL DESCRIPTION

The TDA6107JF includes three video output amplifiers
andis intendedto drivethethree cathodesof acolourCRT
directly. The device is contained in a plastic DIL-bent-SIL
9-pin medium power (DBS9MPF) package, and uses
high-voltage DMOS technology.

To obtain maximum performance, the amplifier should be
used with black-current control.

PACKAGE

2002 Oct 18 2

Philips Semiconductors Product specification

Triple video output amplifier TDA6107JF

BLOCK DIAGRAM

handbook, full pagewidth

V

,

i(1)

1, 2, 3

V

,

i(2)

V

i(3)

CURRENT

SOURCE

MIRROR 1

THERMAL

PROTECTION

CIRCUIT

R

i
R

a

3×

VIP

REFERENCE

MIRROR 3

TDA6107JF

DIFFERENTIAL

MIRROR 2

MIRROR 4

STAGE

V

DD

6

MIRROR 5

CASCODE 1

3×

V

1×

1×

R

f

CASCODE 2

9, 8, 7

oc(3),

V

oc(2),

V

oc(1)

5

I

o(m)

Fig.1 Block diagram (one amplifier shown).

PINNING

SYMBOL PIN DESCRIPTION

V

i(1)

V

i(2)

V

i(3)

1 inverting input 1
2 inverting input 2

3 inverting input 3
GND 4 ground (fin)
I
V
V
V
V

om

DD
oc(3)
oc(2)
oc(1)

5 black-current measurement output

6 supply voltage

7 cathode output 3

8 cathode output 2

9 cathode output 1

handbook, halfpage

V

1

i(1)

V

2

i(2)

V

3

i(3)

GND

4

I

5

om

TDA6107JF

V

6

DD

V

7

oc(3)

V

8

oc(2)

V

9

oc(1)

MBL524

Fig.2 Pin configuration.

4

MBL525

2002 Oct 18 3

Philips Semiconductors Product specification

Triple video output amplifier TDA6107JF

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages measured with respect to pin 4
(ground); currents as specified in Fig.1; unless otherwise specified.

SYMBOL PARAMETER MIN. MAX. UNIT

V

DD

V

i

V

o(m)

V

oc

I

ocsm(L)

I

ocsm(H)

T

stg

T

j

V

es

supply voltage 0 250 V
input voltage at pins 1 to 3 0 12 V
measurement output voltage 0 6 V
cathode output voltage 0 V
LOW non-repetitive peak cathode output current at a flashover

03A

DD

V

discharge of 100 µC
HIGH non-repetitive peak cathode output current at a flashover

06A

discharge of 100 nC
storage temperature −55 +150 °C
junction temperature −20 +150 °C
electrostatic handling voltage

Human Body Model (HBM) − 3000 V
Machine Model (MM) − 300 V

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see

“Handling MOS Devices”

).

QUALITY SPECIFICATION

Quality specification

“SNW-FQ-611 part D”

is applicable and can be found in the

“Quality reference Handbook”

.

The handbook can be ordered using the code 9397 750 00192.

2002 Oct 18 4

Philips Semiconductors Product specification

Triple video output amplifier TDA6107JF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-fin)

R

th(h-a)

Note

1. An external heatsink is necessary.

P

(W)

8

tot

6

handbook, halfpage

thermal resistance from junction to ambient 56 K/W
thermal resistance from junction to fin note 1 11 K/W
thermal resistance from heatsink to ambient 18 K/W

Thermal protection

The internal thermal protectioncircuit gives a decrease of

MBH989

the slew rate at high temperatures: 10% decrease at
130 °C and30% decreaseat 145 °C(typical valueson the
spot of the thermal protection circuit).

(1)

4

2

0

−40

(1) Infinite heatsink.
(2) No heatsink.

0

Fig.3 Power derating curves.

(2)

40 80 160120

T

amb

(°C)

handbook, halfpage

outputs

5 K/W

thermal protection circuit

6 K/W

fin

MGK279

Fig.4 Equivalent thermal resistance network.

2002 Oct 18 5

Philips Semiconductors Product specification

Triple video output amplifier TDA6107JF

CHARACTERISTICS

Operating range: Tj= −20 to +150 °C; VDD= 180 to 210 V. Test conditions: T
V

o(c1)=Vo(c2)=Vo(c3)

=1⁄2VDD; CL= 10 pF (CL consists of parasitic and cathode capacitance); R

(measured in test circuit of Fig.8); unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

q

V

ref(int)

quiescent supply current 5.6 6.6 7.6 mA
internal reference voltage

(input stage)

R

i

input resistance − 3.6 − kΩ
G gain of amplifier 47.5 51.0 55.0
∆G gain difference −2.5 0 +2.5
V

O(oc)

nominal output voltage at

Ii=0µA 116 129 142 V

pins 7, 8 and 9 (DC value)
∆V

O(oc)(offset)

differential nominal output

Ii=0µA − 05V
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)

∆V

o(c)(T)

output voltage temperature
drift at pins 7, 8 and 9

∆V

o(c)(T)(offset)

differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9

I

o(m)(offset)

∆I

/∆I

o(m)

offsetcurrent ofmeasurement
output (for three channels)

linearity of current transfer

o(c)

(for three channels)

I

=0µA;

o(c)

1.5 V < Vi< 5.5 V;

1.8 V < V

−100 µA<I

o(m)

o(c)

<6V

< 100 µA;

1.5 V < Vi< 5.5 V;

1.8 V < V

−100 µA ≤ I

o(m)

<6V

<10mA;

o(c)

1.5 V < Vi< 5.5 V;

I

o(c)(max)

maximum peak output current

1.8 V < V

50V<V

<4V

o(m)

o(c)<VDD

− 50 V − 20 − mA

(pins 7, 8 and 9)

V

o(c)(min)

V

o(c)(max)

B

S

minimum output voltage
(pins 7, 8 and 9)

maximum output voltage
(pins 7, 8 and 9)

small signal bandwidth

Vi= 7.0 V; at I

o(c)

= 0 mA;

note 1

Vi= 1.0 V; at I

o(c)

= 0 mA;

note 1

V

= 60 V (p-p) − 5.5 − MHz

o(c)

(pins 7, 8 and 9)

B

L

large signal bandwidth

V

= 100 V (p-p) − 4.5 − MHz

o(c)

(pins 7, 8 and 9)

t

Pco

cathode output propagation
time 50% input to 50% output
(pins 7, 8 and 9)

V

= 100 V (p-p) square

o(c)

wave; f <1 MHz;

tr=tf=40ns

(pins 1, 2 and 3);

see Figs 6 and 7

=25°C; VDD= 200 V;

amb

= 18 K/W

th(h-a)

− 2.5 − V

− 10 − mV/K

− 0 − mV/K

−50 − +50 µA

−0.9 −1.0 −1.1

−0.9 −1.0 −1.1

−−10 V

VDD− 15 −−V

− 60 − ns

2002 Oct 18 6