Philips TDA6106Q User Manual

INTEGRATED CIRCUITS

DATA SH EET

TDA6106Q

Video output amplifier

Product specification
File under Integrated Circuits, IC02

1997 Mar 03

Philips Semiconductors Product specification

Video output amplifier TDA6106Q

FEATURES

• No external heatsink required

• Black current measurement output for Automatic Black

current Stabilization (ABS)

• Internal 2.5 V reference circuit

• Internal protection against positive appearing CRT

GENERAL DESCRIPTION

The TDA6106Q is a monolithic video output amplifier with
a 6 MHz bandwidth and is contained in a 9-lead plastic
DIL-bent-SIL medium power package. The device uses
high-voltage DMOS technology and is intended to drive
the cathode of a CRT. To obtain maximum performance,
the amplifier should be used with black current control.

flashover discharges

• Single supply voltage of 200 V

• Simple application with a variety of colour decoders

• Controlled switch-off behaviour.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

TDA6106Q DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1

BLOCK DIAGRAM

handbook, full pagewidth

supply voltage

feedback

output

n.c.
n.c.
n.c.

inverting

input

1
2
7

3

−+

69

MIRROR 1

in out

V

bias

1× 1×

MIRROR 2

inout

TDA6106Q

DIFFERENTIAL

STAGE

out out out out in

MIRROR 3

CURRENT

SOURCE

gnd

8

cathode
output

black current

5

measurement
output

4

ground

(substrate)

MBG343

Fig.1 Block diagram.

1997 Mar 03 2

Philips Semiconductors Product specification

Video output amplifier TDA6106Q

PINNING

SYMBOL PIN DESCRIPTION

n.c. 1 not connected
n.c. 2 not connected
V

in

3 inverting input voltage
GND 4 ground, substrate
I

om

V

DD

5 black current measurement output

6 supply voltage
n.c. 7 not connected
V

oc

V

of

8 cathode output voltage

9 feedback output voltage

handbook, halfpage

n.c.
n.c.

V

GND

I

om

V

DD

n.c.

V

V

in

oc

of

1
2
3
4
5

TDA6106Q

6
7
8
9

MBG342

Fig.2 Pin configuration.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); voltages with respect to pin 4 (ground) unless
otherwise specified; currents specified as in Fig.1.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DD

V

in

V

om

V

oc

V

of

I

oc(l)

I

oc(h)

P

max

T

stg

T

j

V

esd

supply voltage 0 250 V
inverting input voltage 0 8 V
black current measurement output voltage 0 6 V
cathode DC output voltage 0 V
feedback output voltage 0 V
low non-repetitive peak cathode output

current
high non-repetitive peak cathode output

current

flashover discharge = 100 µC;
note 1

flashover discharge = 100 nC;
note 2

05A

010A

DD
DD

V
V

maximum power dissipation 0 tbf W
storage temperature −55 +150 °C
junction temperature −20 +150 °C
electrostatic discharge note 3 −2000 +2000 V

note 4 −300 +300 V

Notes

1. The cathode output is protected against peak currents (caused by positive voltage peaks during high-resistance
flash) of 5 A maximum with a charge content of 100 µC.

2. The cathode output is also protected against peak currents (caused by positive voltage peaks during low-resistance
flash) of 10 A maximum with a charge content of 100 nC.

3. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ resistor.

4. Machine model: equivalent to discharging a 200 pF capacitor through a 0 Ω resistor.

1997 Mar 03 3

Philips Semiconductors Product specification

Video output amplifier TDA6106Q

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see

QUALITY SPECIFICATION

“Handling MOS Devices”

).

Quality specification
values”, and can be found in the

“SNW-FQ-611 part E”

“Quality reference handbook”

is applicable, except for ESD Human body model see Chapter “Limiting

(ordering number 9397 750 00192).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER

R
R

th j-a
th j-c

thermal resistance from junction to ambient in free air 56 K/W
thermal resistance from junction to case 12 K/W

(1)

VALUE UNIT

Note

1. External heatsink not required.

CHARACTERISTICS

Operating range: T
Test conditions: T

= −20 to +65 °C; VDD= 180 to 210 V (see note 1), Vom= 1.4 to 6 V.

amb

=25°C; VDD= 200 V; Vom=4V; CL= 10 pF (CL consists of parasitic and cathode capacitance);

amb

measured in test circuit of Fig.5; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DD

I

bias

V

int

I

om(os)

quiescent voltage supply current V
input bias current (pin 3) V
internal reference voltage input stage V
offset current of black current

measurement output

= 100 V 2.8 3.0 3.3 mA

ocDC

= 100 V 0 − 20 µA

ocDC

= 100 V − 2.5 − V

ocDC

Ioc=0µA;

−10 0 +10 µA
Vin= 1.5 to +3.5 V;
Vom= 1.4 to 6 V

∆V

Tint

temperature drift of internal

V

= 100 V − 0.5 − mV/K

ocDC

reference voltage input stage

∆I

om

-----------­∆I

oc

I

of(max)

V

oc(min)

V

oc(max)

linearity of current transfer I

maximum peak output current (pin 9) Voc= 20 V to VDD−30 V − 25 − mA
minimum output voltage (pin 8) Vin= 3.5 V − 712V
maximum output voltage (pin 8) Vin= 1.5 V VDD− 14 VDD− 10 − V

GB gain bandwidth product of open-loop

gain V

os/Vi, dm

BW

BW

S

L

small signal bandwidth V

large signal bandwidth V

= −10 µA to 3 mA;

oc

Vin= 1.5 to +3.5 V;
Vom= 1.4 to 6 V

f = 500 kHz;
V

= 100 V

ocDC

= 60 V (p-p);

ocAC

V

= 100 V

ocDC

= 100 V (p-p);

ocAC

V

= 100 V

ocDC

0.9 1.0 1.1

− 0.52 − GHz

56−MHz

4.7 5.7 − MHz

1997 Mar 03 4