Philips TDA2611A-N5 Datasheet

DATA SH EET

Product specification
File under Integrated Circuits, IC01

November 1982

INTEGRATED CIRCUITS

TDA2611A

5 W audio power amplifier

November 1982 2

Philips Semiconductors Product specification

5 W audio power amplifier TDA2611A

The TDA2611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage
audio amplifier. Special features are:

• possibility for increasing the input impedance

• single in-line (SIL) construction for easy mounting

• very suitable for application in mains-fed apparatus

• extremely low number of external components

• thermal protection

• well defined open loop gain circuitry with simple quiescent current setting and fixed integrated closed loop gain.

QUICK REFERENCE DATA

PACKAGE OUTLINE

9-lead SIL; plastic (SOT110B); SOT110-1; 1996 July 23.

Supply voltage range V

P

6 to 35 V

Repetitive peak output current I

ORM

< 1,5 A

Output power at d

tot

= 10%

V

P

= 18 V; RL= 8 Ω P

o

typ. 4,5 W

V

P

= 25 V; RL= 15 Ω P

o

typ. 5 W

Total harmonic distortion at P

o

< 2 W; RL= 8 Ω d

tot

typ. 0,3 %

Input impedance |Z

i

| typ. 45 kΩ

Total quiescent current at V

P

= 18 V I

tot

typ. 25 mA

Sensitivity for P

o

= 2,5 W; RL= 8 Ω V

i

typ. 55 mV

Operating ambient temperature T

amb

−25 to + 150 °C

Storage temperature T

stg

−55 to + 150 °C

November 1982 3

Philips Semiconductors Product specification

5 W audio power amplifier TDA2611A

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage V

P

max. 35 V

Non-repetitive peak output current I

OSM

max. 3 A

Repetitive peak output current I

ORM

max. 1,5 A
Total power dissipation see derating curves Fig. 2
Storage temperature T

stg

−55 to + 150 °C

Operating ambient temperature T

amb

−25 to + 150 °C

Fig.1 Circuit diagram; pin 3 not connected.

November 1982 4

Philips Semiconductors Product specification

5 W audio power amplifier TDA2611A

Fig.2 Power derating curves.

HEATSINK EXAMPLE

Assume VP= 18 V; RL= 8 Ω; T

amb

= 60 °C maximum; Tj= 150 °C (max. for a 4 W application into an 8 Ω load, the

maximum dissipation is about 2,2 W).
The thermal resistance from junction to ambient can be expressed as:

Since R

th j-tab

= 11 K/W and R

th tab-h

= 1 K/W, R

th h-a

= 41 − (11 + 1) = 29 K/W.

R

th j-a

R

th j-tabRth tab-hRth h-a

150 60–

22,

----------------------

41 K/W.==++=