Philips TDA2611A User Manual
INTEGRATED CIRCUITS
DATA SH EET
TDA2611A
5 W audio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982
Philips Semiconductors Product specification
5 W audio power amplifier TDA2611A
The TDA2611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage
audio amplifier. Special features are:
• possibility for increasing the input impedance
• single in-line (SIL) construction for easy mounting
• very suitable for application in mains-fed apparatus
• extremely low number of external components
• thermal protection
• well defined open loop gain circuitry with simple quiescent current setting and fixed integrated closed loop gain.
QUICK REFERENCE DATA
Supply voltage range V
Repetitive peak output current I
Output power at d
V
= 18 V; RL= 8 Ω P
P
V
= 25 V; RL= 15 Ω P
P
Total harmonic distortion at P
tot
= 10%
< 2 W; RL= 8 Ω d
o
Input impedance |Z
Total quiescent current at V
Sensitivity for P
= 2,5 W; RL= 8 Ω V
o
= 18 V I
P
Operating ambient temperature T
Storage temperature T
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 July 23.
P
ORM
o
o
tot
| typ. 45 kΩ
i
tot
i
amb
stg
6 to 35 V
< 1,5 A
typ. 4,5 W
typ. 5 W
typ. 0,3 %
typ. 25 mA
typ. 55 mV
−25 to + 150 °C
−55 to + 150 °C
November 1982 2
Philips Semiconductors Product specification
5 W audio power amplifier TDA2611A
Fig.1 Circuit diagram; pin 3 not connected.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage V
Non-repetitive peak output current I
Repetitive peak output current I
P
OSM
ORM
max. 35 V
max. 3 A
max. 1,5 A
Total power dissipation see derating curves Fig. 2
Storage temperature T
Operating ambient temperature T
stg
amb
−55 to + 150 °C
−25 to + 150 °C
November 1982 3
Philips Semiconductors Product specification
5 W audio power amplifier TDA2611A
Fig.2 Power derating curves.
HEATSINK EXAMPLE
Assume VP= 18 V; RL= 8 Ω; T
= 60 °C maximum; Tj= 150 °C (max. for a 4 W application into an 8 Ω load, the
amb
maximum dissipation is about 2,2 W).
The thermal resistance from junction to ambient can be expressed as:
R
th j-a
Since R
R
th j-tabRth tab-hRth h-a
= 11 K/W and R
th j-tab
th tab-h
150 60–
---------------------22,
= 1 K/W, R
41 K/W.==++=
= 41 − (11 + 1) = 29 K/W.
th h-a
November 1982 4
Loading...