Philips TDA1563Q User Manual

INTEGRATED CIRCUITS

DATA SH EET

TDA1563Q

2 × 25 W high efficiency car radio
power amplifier

Product specification
Supersedes data of 1998 Jul 14
File under Integrated Circuits, IC01

2000 Feb 09

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

FEATURES

• Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode

• Differential inputs with high Common Mode Rejection
Ratio (CMRR)

• Mute/standby/operating (mode select pin)

• Zero crossing mute circuit

• Load dump protection circuit

• Short-circuit safe to ground, to supply voltage and

across load

• Loudspeaker protection circuit

• Device switches to SE operation at excessive junction

temperatures

• Thermal protectionat high junction temperature (170°C)

• Diagnostic information (clip detection and

protection/temperature)

• Clipping information can be selected between
THD = 2.5% or 10%

TDA1563Q

GENERAL DESCRIPTION

The TDA1563Q is a monolithic power amplifier in a
17-lead DIL-bent-SIL plastic power package. It contains
two identical 25 W amplifiers. The dissipation is minimized
by switching from SE to BTL mode when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage DC biased 6 14.4 18 V

non-operating −−30 V
load dump −−45 V

I

ORM

I

q(tot)

I

stb

Z

 input impedance 90 120 150 kΩ

i

P

o

G

v

CMRR common mode rejection ratio f = 1 kHz; R
SVRR supply voltage ripple rejection f = 1 kHz; R

∆V

 DC output offset voltage −−100 mV

O

α

cs

∆G

 channel unbalance −−1dB

v

repetitive peak output current −−4A
total quiescent current RL= ∞−95 150 mA
standby current − 150µA

output power RL=4Ω; EIAJ − 38 − W

=4Ω; THD = 10% 23 25 − W

R

L

V

selclip

RL=4Ω; THD = 2.5% 18 20 − W

closed loop voltage gain 25 26 27 dB

=0Ω−80 − dB

s

=0Ω 45 65 − dB

s

channel separation Rs=0Ω 40 70 − dB

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA1563Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

2000 Feb 09 2

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

BLOCK DIAGRAM

handbook, full pagewidth

IN2−

IN2+

IN1−

IN1+

CIN

V

16

17

60
kΩ

3

60
kΩ

2

1

P1

V

P2

MUTE

13

SLAVE

CONTROL

5

−

VI

+

60
kΩ

25 kΩ

60
kΩ

V

ref

V

P

+

VI

−

MUTE

TDA1563Q

+

10

−

−

IV

+

−

VI

+

−
+

+

VI

−

+

IV

−

OUT2−

11

OUT2+

4

CSE

7

OUT1−

SLAVE

CONTROL

TDA1563Q

STANDBY

LOGIC

6121415

MODE SC DIAG CLIP

Fig.1 Block diagram.

2000 Feb 09 3

−

+

CLIP AND

DIAGNOSTIC

GND

9

MGR173

8

OUT1+

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

PINNING

SYMBOL PIN DESCRIPTION

IN1+ 1 non-inverting input 1
IN1− 2 inverting input 1
CIN 3 common input
CSE 4 electrolytic capacitor for SE mode
V

P1

MODE 6 mute/standby/operating
OUT1− 7 inverting output 1
OUT1+ 8 non-inverting output 1
GND 9 ground
OUT2− 10 inverting output 2
OUT2+ 11 non-inverting output 2
SC 12 selectable clip
V

P2

DIAG 14 diagnostic: protection/temperature
CLIP 15 diagnostic: clip detection
IN2− 16 inverting input 2
IN2+ 17 non-inverting input 2

5 supply voltage 1

13 supply voltage2

handbook, halfpage

IN1+
IN1−

CIN

CSE

V

P1

MODE
OUT1−
OUT1+

GND
OUT2−
OUT2+

SC

V

P2

DIAG

CLIP

IN2−
IN2+

1
2
3
4
5
6
7
8
9

TDA1563Q

10
11
12
13
14
15
16
17

TDA1563Q

MGR174

Fig.2 Pin configuration.

2000 Feb 09 4

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

FUNCTIONAL DESCRIPTION

The TDA1563Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP= 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches to BTL
operation.

With a sine wave input signal, the dissipation of a
conventionalBTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1563Q (see Fig.10).

In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
smallpercentageofthetime.Assumingthatamusicsignal
has a normal (Gaussian) amplitude distribution, the
dissipation of a conventional BTL amplifier with the same
output power is approximately 70% higher (see Fig.11).

The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 150 °C.In this case, the output poweris limited to
5 W per amplifier.

The gain of each amplifier is internally fixed at 26 dB. With
the MODE pin, the device can be switched to the following
modes:

• Standby with low standby current (<50 µA)

• Mute condition, DC adjusted

• On, operation.

The information on pin 12 (selectable clip) determines at
which distortion figures a clip detection signal will be
generated at the clip output. A logic 0 applied to pin 12 will
select clip detection at THD = 10%, a logic 1 selects
THD = 2.5%. A logic 0 can be realised by connecting this
pin to ground. A logic 1 can be realised by connecting it to
V

(see Fig.7) or the pin can also be left open. Pin 12

logic

may not be connected to VP because its maximum input
voltage is 18 V (VP> 18 V under load dump conditions).

The device is fully protected against a short circuit of the
output pins to ground and to the supply voltage. It is also
protected against a short circuit of the loudspeaker and
against high junction temperatures. In the event of a
permanentshortcircuittogroundorthesupplyvoltage, the
output stage will be switched off, causing low dissipation.
With a permanent short circuit of the loudspeaker, the
output stage will be repeatedly switched on and off. In the
‘on’ condition, the duty cycle is low enough to prevent
excessive dissipation.

TDA1563Q

To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector only allows switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately, avoiding clicks from the electronic circuit
preceding the power amplifier.

The voltage of the SE electrolytic capacitor (pin 4) is kept
at 0.5VP by a voltage buffer (see Fig.1). The value of this
capacitor has an important influence on the output power
in SE mode. Especially at low signal frequencies, a high
value is recommended to minimize dissipation.

The two diagnostic outputs (clip and diag) are
open-collector outputs and require a pull-up resistor.

The clip output will be LOW when the THD of the output
signal is higher than the selected clip level (10% or 2.5%).

The diagnostic output gives information:

• about short circuit protection:
– When a short circuit (to ground or the supply voltage)

occurs at the outputs (for at least 10 µs), the output
stages are switched off to prevent excessive
dissipation. The outputs are switched on again
approximately 50 ms after the short circuit is
removed. During this short circuit condition, the
protection pin is LOW.

– When a short circuit occurs across the load (for at

least 10 µs), the output stages are switched off for
approximately50 ms.Afterthistime,acheckis made
to see whether the short circuit is still present.
The power dissipation in any short circuit condition is
very low.

• during startup/shutdown, when the device is internally
muted.

• temperaturedetection: This signal (junctiontemperature
> 145°C) indicates that the temperature protection will
becomeactive. The temperature detection signal can be
used to reduce the input signal and thus reduce the
power dissipation.

2000 Feb 09 5

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power

TDA1563Q

amplifier

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

V

P(sc)

V

rp

I

ORM

P

tot

T

stg

T

vj

T

amb

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-c)

R

th(j-a)

supply voltage operating − 18 V

non-operating − 30 V
load dump; t

> 2.5 ms − 45 V

r

short-circuit safe voltage − 18 V
reverse polarity voltage − 6V
repetitive peak output current − 4A
total power dissipation − 60 W
storage temperature −55 +150 °C
virtual junction temperature − 150 °C
ambient temperature −40 −°C

thermal resistance from junction to case see note 1 1.3 K/W
thermal resistance from junction to ambient 40 K/W

Note

1. The value of R

depends on the application (see Fig.3).

th(c-h)

Heatsink design

There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.

With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 6.5 W.

Atavirtual junction temperature of 150 °C and a maximum
ambient temperature of 65 °C, R
R

= 0.2 K/W, the thermal resistance of the heatsink

th(c-h)

150 65–

should be:

150 65–

----------------------

---------------------­2 6.5×

2 6.5×

1.3– 0.2– 5 K/W=

1.3– 0.2– 5 K/W=

= 1.3 K/W and

th(vj-c)

Comparedto a conventional BTL amplifier, the TDA1563Q
has a higher efficiency. The thermal resistance of the

145 65–



heatsink should be:

1.7

----------------------



2 6.5×

1.3– 0.2– 9 K/W=

handbook, halfpage

OUT 1 OUT 1

3.6 K/W

0.6 K/W

virtual junction

3.6 K/W

0.1 K/W

case

OUT 2 OUT 2

3.6 K/W

0.6 K/W

3.6 K/W

MGC424

2000 Feb 09 6

Fig.3 Thermal equivalent resistance network.

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power

TDA1563Q

amplifier

DC CHARACTERISTICS

VP= 14.4 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies

V

P

I

q(tot)

I

stb

V

C

∆V

 DC output offset voltage on state −−100 mV

O

Mode select switch (see Fig.4)
V

ms

I

ms

Diagnostic

V

diag

I

diag

V

SC

Protection

T

pre

T

dis(BTL)

=25°C; measured in Fig.7; unless otherwise specified.

amb

supply voltage note 1 6 14.4 18 V
total quiescent current RL= ∞−95 150 mA
standby current − 150µA
average electrolytic capacitor voltage at pin 4 − 7.1 − V

mute state −−100 mV

voltage at mode select pin (pin 6) standby condition 0 − 1V

mute condition 2 − 3V
operating condition 4 5 V

V

P

switch current through pin 6 Vms=5V − 25 40 µA

output voltage at diagnostic outputs (pins 14 and

during any fault condition −−0.5 V

15): protection/temperature and detection

current through pin 14 or 15 during any fault condition 2 −−mA
input voltage at selectable clip pin (pin 12) clip detect at THD = 10% −−0.5 V

clip detect at THD = 2.5% 1.5 − 18 V

prewarning temperature − 145 −°C
BTL disable temperature note 2 − 150 −°C

Notes

1. The circuit is DC biased at V

= 6 to 18 V and AC operating at VP=8to18V.

P

2. If the junction temperature exceeds 150 °C, the output power is limited to 5 W per channel.

2000 Feb 09 7

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

V

18

handbook, halfpage

mode

Operating

4

3

2

1

0

Mute

Standby

MGR176

TDA1563Q

Fig.4 Switching levels of the mode select switch.

2000 Feb 09 8

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power

TDA1563Q

amplifier

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; CSE = 1000 µF; f = 1 kHz; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power THD = 0.5% 15 19 − W

THD total harmonic distortion P
P
B

f

ro(l)

f

ro(h)

G

d
p

v

dissipated power see Figs 10 and 11 W
power bandwidth THD= 1%; Po= −1dB

low frequency roll-off −1 dB; note 2 − 25 − Hz
high frequency roll-off −1dB 130 −−kHz
closed loop voltage gain Po= 1 W 25 26 27 dB

SVRR supply voltage ripple rejection R

CMRR common mode rejection ratio R

Z

 input impedance 90 120 150 kΩ

i

∆Z

 mismatch in input impedance − 1 − %

i

V

SE-BTL

V

o(mute)

V

n(o)

α

cs

∆G

SE to BTL switch voltage level note 3 − 3 − V

 output voltage mute (RMS value) Vi= 1 V (RMS) − 100 150 µV

noise output voltage on; Rs=0Ω; note 4 − 100 150 µV

channel separation Rs=0Ω; Po=15W 40 70 − dB

 channel unbalance −− 1dB

v

=25°C; measured in Fig.7; unless otherwise specified.

amb

THD = 10% 23 25 − W
EIAJ − 38 − W
V

= 13.2 V; THD = 0.5% − 16 − W

P

V

= 13.2 V; THD = 10% − 20 − W

P

= 1 W; note 1 − 0.1 − %

o

− 20 to 15000 − Hz

with respect to 15 W

=0Ω; V

s

ripple

= 2 V (p-p)
on/mute 45 65 − dB
standby; f = 100 Hz to 10 kHz 80 −−dB

=0Ω−80 − dB

s

on; R

=10kΩ; note 4 − 105 −µV

s

mute; note 5 − 100 150 µV

Notes

1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.

2. Frequency response externally fixed (input capacitors determine low frequency roll-off).

3. The SE to BTL switch voltage level depends on V

.

P

4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage is independent of Rs.

2000 Feb 09 9

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, halfpage

V

o

0

CLIP

0

MGR177

t

handbook, halfpage

I

o

max

max

DIAG

0

TDA1563Q

10 µs

short circuit
removed

short circuit
to ground

50

ms

maximum current short circuit to supply pins

50

ms

50

ms

MGR178

t

t

Fig.5 Clip detection waveforms.

Fig.5 Clip detection waveforms. Fig.6 Protection waveforms.

2000 Feb 09 10

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

TEST AND APPLICATION INFORMATION

handbook, full pagewidth

V

P1

5

TDA1563Q

−

0.5R

1 µF

0.5R

s

220 nF

s

220 nF

16IN2−

17IN2+

3CIN

60kΩ60

25 kΩ

+

−

+

kΩ

TDA1563Q

3.9 Ω

V

P

V

P2

13

10

11

V

ref

4

220 nF 2200 µF

OUT2−

4 Ω

OUT2+

CSE

1000 µF

100 nF

100 nF

Ω

3.9

0.5R

0.5R

s

220 nF

s

220 nF

60kΩ60

2IN1−

kΩ

+

−

1IN1+

+

−

ms

CLIP AND

DIAGNOSTIC

STANDBY

LOGIC

6121415
MODE SC DIAG CLIP9GND

V

2.5%

10%

R

R

7

8

pu

pu

OUT1−

4 Ω

OUT1+

V

logic

MGR180

Ω

3.9

100 nF

3.9 Ω

100 nF

signal ground

power ground

Connect Boucherot filter to pin 8 or pin 10 with the shortest possible connection.

Fig.7 Application diagram.

2000 Feb 09 11

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

76.20

TDA1563Q

35.56

+

Out2

−

RL-98

2.5%

−

Dimensions in mm.

gnd

In1

+

Mode

On
Off

10%

Mute

Clip

Vp

Fig.8 PCB layout (component side) for the application of Fig.7.

2000 Feb 09 12

GND

Prot

Clip

TDA1563Q

−

Out2

+

−

In2

+

gnd

MGR189

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

76.20

TDA1563Q

35.56

Dimensions in mm.

2× 25 W high efficiency

Out1

In1

MGR190

In2

Out2

220 nF

17

GND

220 nF

1

1 µF

220 nF

Vp

Fig.9 PCB layout (soldering side) for the application of Fig.7.

2000 Feb 09 13

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

25

handbook, halfpage

P

d

(W)

20

15

10

5

0

010

Input signal 1 kHz, sinusoidal; VP= 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1563Q.

(1)

(2)

2

468

Fig.10 Dissipation; sine wave driven.

MBH692

P

(W)

o

TDA1563Q

25

handbook, halfpage

P

d

(W)

20

(1)

15

10

5

0

010

(1) For a conventional BTL amplifier.
(2) For TDA1563Q.

(2)

2

468

Fig.11 Dissipation; pink noise through IEC-268

filter.

MBH693

P

o

(W)

430 Ω

input output

3.3
kΩ

91
nF

330 Ω

Fig.12 IEC-268 filter.

2000 Feb 09 14

3.3
kΩ

68
nF

470 nF2.2 µF 2.2 µF

10
kΩ

MGC428

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

TDA1563Q

16IN2−

220 nF

17IN2+

pink

noise

220 nF

1 µF

IEC-268

FILTER

220 nF

220 nF

3CIN

2IN1−

1IN1+

60kΩ60

60kΩ60

kΩ

25 kΩ

kΩ

TDA1563Q

3.9

3.9

V

P

Ω

Ω

P1

V

P2

13

V
5

220 nF 2200 µF

−

10

OUT2−

100 nF

+

100 nF

4

Ω

−

11

OUT2+

3.9

Ω

+

V

ref

+

−

+

−

4

7

8

CSE

OUT1−

4

OUT1+

1000 µF

Ω

Ω

3.9

100 nF

100 nF

STANDBY

LOGIC

6121415
MODE SC DIAG CLIP

V

ms

Fig.13 Test and application diagram for dissipation measurements with a music-like signal (pink noise).

2000 Feb 09 15

CLIP AND

DIAGNOSTIC

9
GND

R

pu

R

pu

V

signal ground

power ground

logic

MGR181

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

Vp (V)

MDA845

2416

150

handbook, halfpage

I

q

(mA)

100

50

0

0

8

250

handbook, halfpage

I

p

(mA)

200

150

100

50

0

02

TDA1563Q

MDA844

46

V

(V)

ms

Vms= 5 V; RI= ∞.

Fig.14 Quiescent current as a function of VP.

60

handbook, halfpage

P

o

(W)

40

20

0

818

10

12 14 16

(1)

(2)

(3)

MDA843

Vp (V)

VP= 14.4 V; Vi=25mV

Fig.15 IP as a function of Vms (pin 3).

10

handbook, halfpage

THD + N

(%)

1

−1

10

−2

10

−2

10

MDA842

(1)

(2)

(3)

−1

10

1

10

Po (W)

2

10

(1) EIAJ, 100 Hz.
(2) THD = 10 %.
(3) THD = 0.5 %.

Fig.16 Output power as a function of VP.

2000 Feb 09 16

(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

Fig.17 THD + noise as a function of Po.

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

10

handbook, halfpage

THD + N

(%)

1

−1

10

−2

10

10 10

2

3

10

MDA841

(1)

(2)

f (Hz)

5

10

4

10

28

handbook, halfpage

G

v

(dB)

26

24

22

20

10 10

TDA1563Q

MDA840

2

3

10

4

10

5

10

f (Hz)

6

10

(1) Po=10W.
(2) Po=1W.

Fig.18 THD + noise as a function of frequency.

−10

handbook, halfpage

α

cs

(dB)

−30

−50

−70

−90

10

(1)

(2)

2

10

3

10

4

10

f (Hz)

MDA838

Vi= 100 mV.

Fig.19 Gain as a function of frequency.

MDA839

4

10

f (Hz)

5

10

SVRR

(dB)

0

handbook, halfpage

−20

−40

−60

5

10

−80
10

2

10

3

10

(1) Po=10W.
(2) Po=1W.

Fig.20 Channel separation as a function of

frequency.

2000 Feb 09 17

V

ripple(p-p)

=2V.

Fig.21 SVRR as a function of frequency.

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

0.8

handbook, halfpage

P

o

(W)

0.6

0.4

0.2

0

08

16

MDA846

V

24

(V)

p

TDA1563Q

Vi=70mV.

Fig.22 AC operating as a function of VP.

2000 Feb 09 18

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

V

load

V

P

0

TDA1563Q

MGL914

See Fig.7:
V

load=V7−V8

V

master=V7

V

slave=V8

or V11− V

or V

or V

10

−V

P

V

P

V

master

1/2 V

P

0

V

P

V

slave

1/2 V

P

0

0 1 2 t (ms) 3

10

11

Fig.23 Output waveforms.

2000 Feb 09 19

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

APPLICATION NOTES
Example of the TDA1563Q in a car radio system

solution

The PCB shown here is used to demonstrate an audio
system solution with Philips Semiconductors devices for
caraudio applications. The board includes the SAA7705H:
a high-end CarDSP (Digital Signal Processor), the
TDA3617J: a voltage regulator providing 9 V, 5 V and

3.3 V outputs, and two TDA1563Qs to provide four 25 W
power outputs. A complete kit (application report, software
and demo board) of this “car-audio chip-set demonstrator”
is available.

The TDA1563Q is a state of the art device, which is
different to conventional amplifiers in power dissipation
because it switches between SE mode and conventional
BTL mode, depending on the required output voltage
swing. As a result, the PCBlayout is more critical than with
conventional amplifiers.

NOTES AND LAYOUT DESIGN RECOMMENDATIONS

1. The TDA1563Q mutes automatically during switch-on
and switch-off and suppresses biasing clicks coming
fromthe CarDSP circuit preceding the power amplifier.
Therefore, it is not necessary to use a plop reduction
circuit for the CarDSP. To mute or to enlarge the mute
time of the system, the voltage at the mode pin of the
amplifiers should be kept between 2 V and 3 V.

2. The input reference capacitor at pin 3 is specified as
1 µF but has been increased to 10 µF to improve the
switch-onplopperformance of the amplifiers. By doing
this, the minimum switch-on time increases from
standby,viainternalmute,tooperatingfrom150 ms to
600 ms.

3. It is important that the copper tracks to and from the
electrolytic capacitors (SE capacitors and supply
capacitors) are close together. Because of the
switching principle, switching currents flow here.
Combining electrolytic capacitors in a 4-channel
application is not recommended.

4. Filters at the outputs are necessary for stability
reasons. The filters at output pins 8 and 10 to ground
should be connected as close as possible to the
device (see layout of PCB).

TDA1563Q

5. Connect the supply decoupling capacitors of 220 nF
as closely as possible to the TDA1563Qs.

6. Place the tracks of the differential inputs as close
togetheras possible. If disturbances are injected at the
inputs, they will be amplified 20 times. Oscillation may
occur if this is not done properly.

7. The SE line output signal of the CarDSP here is
offered as a quasi differential input signal to the
amplifiers by splitting the 100 Ω unbalance series
resistance into two 47 Ω balanced series resistances.
Thereturntrackfrom the minus inputs of the amplifiers
are not connected to ground (plane) but to the line out
reference voltage of the CarDSP, VrefDA.

8. The output signal of the CarDSP needs an additional
1st order filter. This is done by the two balanced series
resistances of 47 Ω (see note 7) and a ceramic
capacitor of 10 nF. The best position to place these
10 nF capacitors is directly on the input pins of the
amplifiers.Now,any high frequency disturbance at the
inputs of the amplifiers will be rejected.

9. Only the area underneath the CarDSP is a ground
plane. A ground plane is necessary in PCB areas
where high frequency digital noise occurs. The audio
outputs are low frequency signals. For these outputs,
itis better to use two tracks (feed and return)asclosely
as possible to each other to make the disturbances
common mode. The amplifiers have differential inputs
with a very high common mode rejection.

10. The ground pin of the voltage regulator is the
reference for the regulator outputs. This ground
reference should be connected to the ground plane of
the CarDSP by one single track. The ground plane of
theCarDSP may not be connectedto“another” ground
by a second connection.

11. Prevent power currents from flowing through the
ground connection between CarDSP and voltage
regulator. The currents in the ground from the
amplifiers are directly returned to the ground pin of the
demo board. By doing this so, no ground interference
between the components will occur.

2000 Feb 09 20

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

Line-in

Left

(3)

Car-audio chip-set demonstrator

+

2.5%

10%

Car DSP

SAA7704/05/08

on bottom side

V

BATT

IO-98

+

(3)

TDA1563QTDA1563QTDA3617J

Error On

FrontRear

Diag Clip

TDA1563Q

−

FL

+

−

RL

+

10 V to 16 V

V

battery

FR

RR

+

−
+

−

Right

PHILIPS Semiconductors

(4)

4× 25 W into 4 Ohms

(5)

Power ON Mute

2

I

C

Top copper layer

(8)

Car-audio chip-set demonstrator

Version 0.1

DSP

GND

(6)

Bottom copper layer

Fig.24 PCB layout.

2000 Feb 09 21

MGS827

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

V

LEFT

LINE

IN

RIGHT

CD-GND

I2C

SCL

SDA

MICROCONTROLLER

BATT

power

4.7 kΩ
error

mute

4.7 kΩ

diagnostic

4.7 kΩ

clip

1 µF

15 kΩ

1 µF

15 kΩ

1 µF

47 nF

PLANE

1 to 5

PLANE

6

5 V

8
7

100 Ω

100 µF

GND

3.3 V ANA

330 pF

8.2 kΩ

330 pF

8.2 kΩ

1 MΩ

82 kΩ

22 µF

4.7 kΩ

power

on

VDACN1

PLANE

VREFAD

VDACP

CDLB

CDLI

CDRB

CDRI

CDGND

AMAFR

AMAFL
TAPER
TAPEL

1

2

73

72

71

70

77

78
66

67
68
69

100 nF

DDA1

V

74

4 3

AML

BLM21A10

FML

PLANE

47 µF

SSA1

V
75

61

SELFR

3.3 V DIG

PLANE

VDACN2

76

65

DD(OSC)

V

100 nF

GND

GND

TP522V

21

VOLTAGE REGULATOR

V

en1

2

V

en3

1

6

REG2

47 nF

5 V 3.3 V DIG 3.3 V ANA

22 nF

PLANE

DDD5V1

SSD5V1

V

23

63

62

OSCIN

SS(OSC)

V

X1

PLANE

18
pF

PLANE

TDA3617J

9

HOLD7V

en2

5 V

100 Ω

22 nF

PLANE

DDD5V2

SSD5V2

V

V

36

37

Car DSP

SAA7704/05/08H

42

64

OSCOUT

DSPRESET

220 nF

220

PLANE

100

18

pF

pF

PLANE

PLANE

5

22 nF

DDD5V3

V
46

57

SCL

Ω

REG3

3

8

PLANE

SSD5V3

V
47

58

SDA

220

Ω

PLANE

V

P

GND

47 µF

V

56A024

3.3 V DIG

DDD3V1

V

48

51

CD2WS

100 pF

220 nF

GND

BLM21A10

DDD3V2

DDD3V3

V
52

25

CD2DATA

PLANE GND

47 nF

100 nF

DDD3V4

SSD3V1

V

V

55

49

26

27

28

CD2CL

CD1WS

CD1DATA

PLANE

V

BATT

SSD3V2

V

V

50

53

29

CD1CL

BAS16/A6

1 MΩ

PLANE

SSD3V3

SSD3V4

V
54

43

44

RTCB

SHTCB

DDA2

V
11

16

15

13

14

12

10

45

TSCAN

TDA1563Q

5 V

10 kΩ

10 kΩ

BC848B/1k

GND

3.3 V ANA

100 nF

PLANE

FLV

2.2
nF

FLI

FRV

2.2
nF

FRI

RRV

6

7

9

8

RRI

RLV

RLI

VREFDA

V

SSA2

PLANE

MGS825

2.2
nF

2.2
nF

22 µF

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

47 Ω

A

B
C

D

E

F

G

H

I

J

K

Fig.25 Car-audio chip-set demonstrator (continued in Fig.26).

2000 Feb 09 22

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

handbook, full pagewidth

A

2.5%

10%

220 nF
220 nF

220 nF
220 nF

10 µF

10 µF

220 nF
220 nF

220 nF
220 nF

GND

5 V

10 nF

10 nF

10 nF

10 nF

BATT

MODE

PGND

MODE

BATT

CLIP

DIAG

IN2+

IN2−

IN1+

IN1−

IN1+

IN1−

IN2+

IN2−

DIAG

CLIP

SC

CIN

CIN

SC

clip select

B
C

D

E

F

G

H

I

J

K

V

V

P1

13

5

15
14
12

17

TDA1563Q

16

1

2

3

BATT

2200 µF

(16 V)

220 nF

V

P2

GND PGND

GND

9

CSE

46

OUT2+

11

OUT2−

10

OUT1+

8

OUT1−

7

100 µH/6A

PGNDV

1000 µF

3.9 Ω

3.9 Ω

(16 V)

3.9 Ω
100 nF

100 nF

100 nF

3.9 Ω

100 nF

V battery
GND

PGND

PGND

2× HIGH EFFICIENCY POWER AMPLIFIER

OUT1−

P1

13

V

2200 µF

(16 V)

P2

220 nF

7

OUT1+

8

OUT2−

10

OUT2+

11

CSE

46

9

GND

PGNDV

3.9 Ω

3.9 Ω

1000 µF

(16 V)

3.9 Ω
100 nF

100 nF

100 nF

100 nF

3.9 Ω

PGND

PGND

3

1

2

17

TDA1563Q

16
12
14
15

5

V

OUT+

FRONT

LEFT

OUT−

OUT+

FRONT

RIGHT

OUT−

OUT−

REAR

RIGHT

OUT+

OUT−

REAR

LEFT

OUT+

MGS826

TDA1563Q

Fig.26 Car-audio chip-set demonstrator (continued from Fig.25).

2000 Feb 09 23

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

Advantages of high efficiency

• Power conversion improvement (power supply)

Usually, the fact that the reduction of dissipation is
directly related to supply current reduction is neglected.
One advantage is less voltage drop in the whole supply
chain.Another advantage is less stress for the coil inthe
supply line. Even the adapter or supply circuit remains
cooler than before as a result of the reduced heat
dissipation in the whole chain because more supply
current will be converted to output power.

• Power dissipation reduction

This is the best known advantage of high efficiency
amplifiers.

• Heatsink size reduction

The heatsink size of a conventional amplifier may be
reduced by approximately 50% at VP= 14.4 V when the
TDA1563Q is used. In this case, the maximum heatsink
temperature will remain the same.

• Heatsink temperature reduction

The power dissipation and the thermal resistance of the
heatsinkdetermine the heatsink temperature rise. When
the same heatsink size is used as in a conventional
amplifier, the maximum heatsink temperature
decreases and also the maximum junction temperature,
which extends the life of this semiconductor device.
The maximum dissipation with music-like input signals
decreases by 40%.

It is clear that the use of the TDA1563Q saves a significant
amount of energy. The maximum supply current
decreases by approximately 32%, which reduces the
dissipation in the amplifier as well in the whole supply
chain. The TDA1563Q allows a heatsink size reduction of
approximately 50% or a heatsink temperature decrease of
40% when the heatsink size is not changed.

TDA1563Q

handbook, halfpage

Same junction

temperature

Heatsink

size

reduction of

50%

Advantage of the concept used by the TDA1563Q

The TDA1563Q is highly efficient under all conditions,
because it uses a SE capacitor to create a non-dissipating
half supply voltage. Other concepts rely on both input
signals being the same in amplitude and phase. With the
concept of an SE capacitor, it does not matter what kind of
signal processing is done on the input signals.
For example, amplitude difference, phase shift or delays
betweenboth input signals, or other DSP processing,have
no impact on the efficiency.

VP = 14.4 V

dissipation

Supply
current

reduction of

32%

choice

reduction of 40%

at Po = 1.6 W

Same heatsink

Heatsink

temperature

reduction of

40%

Fig.27 Heatsink design

Power

size

MGS824

2000 Feb 09 24

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

INTERNAL PIN CONFIGURATIONS

PIN NAME EQUIVALENT CIRCUIT

1, 2, 16,
17 and 3

4C

IN1+, IN1−, IN2−,
IN2+ and CIN

SE

1, 2, 16, 17

V

P1, VP2

V

P1

V

P2

V

P1, VP2

TDA1563Q

3

MGR182

6 MODE

7, 11 OUT1−, OUT2+

6

V

P1, VP2

4

MGR183

MGR184

2000 Feb 09 25

7, 11

4

MGR185

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

PIN NAME EQUIVALENT CIRCUIT

8, 10 OUT1+, OUT2−

12 SC

V

P1, VP2

V

P2

12

TDA1563Q

8, 10

4

MGR186

14, 15 PROT, CLIP

MGR187

V

P2

14, 15

MGR188

2000 Feb 09 26

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

non-concave

D

d

x

E

h

D

h

view B: mounting base side

A

2

TDA1563Q

SOT243-1

117

e

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

A2bpcD

17.0

4.6

4.4

0.75

0.60

15.5

0.48

0.38

1

e

(1)

deD

24.0

20.0

23.6

19.6

w M

b

p

(1)

E

h

12.2

10 2.54

11.8

0 5 10 mm

B

j

L

3

1.27

scale

1

e

5.08

L

E

2

h

6

Q

LL3m

3.4

12.4

3.1

11.0

2.4

1.6

e

4.3

m

E

A

c

2

2.1

1.8

v M

(1)

v

Qj

0.8

0.4w0.03

Z

x

2.00

1.45

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT243-1

IEC JEDEC EIAJ

REFERENCES

2000 Feb 09 27

EUROPEAN

PROJECTION

ISSUE DATE

97-12-16
99-12-17

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

SOLDERING
Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual
soldering.Amorein-depthaccountofsolderingICscanbe
found in our

Packages”

Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

DBS, DIP, HDIP, SDIP, SIL suitable suitable

“Data Handbook IC26; Integrated Circuit

(document order number 9398 652 90011).

PACKAGE

Thetotal contact time of successive solder waves must not
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

SOLDERING METHOD

DIPPING WAVE

(1)

TDA1563Q

). If the

stg(max)

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2000 Feb 09 28

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

NOTES

TDA1563Q

2000 Feb 09 29

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

NOTES

TDA1563Q

2000 Feb 09 30

Philips Semiconductors Product specification

2 × 25 W high efficiency car radio power
amplifier

NOTES

TDA1563Q

2000 Feb 09 31

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
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Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
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India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
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Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

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Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 753503/25/02/pp32 Date of release:2000 Feb 09 Document order number: 9397 750 06309