Philips TDA1562Q, TDA1562ST, TDA1562SD User Manual

INTEGRATED CIRCUITS
DATA SH EET
TDA1562Q; TDA1562ST; TDA1562SD
70 W high efficiency power amplifier with diagnostic facility
Preliminary specification Supersedes data of 1998 Apr 07
2003 Feb 12
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility

FEATURES

Very high output power, operating from a single low supply voltage
Low power dissipation, when used for music signals
Switches to low output power at too high case
temperatures
Few external components
Fixed gain
Differential inputs with high common mode rejection
Mode select pin (on, mute and standby)
Status I/O pin (class-H, class-B and fast mute)
All switching levels with hysteresis
Diagnostic pin with information about:
– Dynamic Distortion Detector (DDD) – Any short-circuit at outputs – Open load detector – Temperature protection.
No switch-on or switch-off plops
TDA1562Q; TDA1562ST;
TDA1562SD
Fast mute on supply voltage drops
Quick start option (e.g. car-telephony/navigation)
Low (delta) offset voltage at the outputs
Load dump protection
Short-circuit safe to ground, supply voltage and across
the load
Low power dissipation in any short-circuit condition
Protected against electrostatic discharge
Thermally protected
Flexible leads.

GENERAL DESCRIPTION

The TDA1562 is a monolithic integrated 70 W/4 Bridge-Tied Load (BTL) class-H high efficiency power amplifier in a 17 lead DIL-bent-SILplastic power package.
The device can be used for car audio systems (e.g. car radios and boosters) as well as mains fed applications (e.g. midi/mini audio combinations and TV sound).

QUICK REFERENCE DATA

VP= 14.4 V; RL=4Ω; Rs=0Ω; f = 1 kHz; T
=25°C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
supply voltage operating; note 1 8 14.4 18 V
non-operating −−30 V load dump −−45 V
I
q
quiescent current on and mute; RL= open
110 150 mA
circuit
I
stb
V
output offset voltage on and mute −−100 mV
OO
∆V
delta output offset voltage on mute −−30 mV
OO
G
v
Z
differential input impedance 90 150 k
i(dif)
P
o
standby current standby 350µA
voltage gain 25 26 27 dB
output power THD = 0.5% 45 55 W
THD = 10% 60 70 W
THD total harmonic distortion Po=1W 0.03 %
=20W 0.06 %
P
o
DDD active 2.1 %
2003 Feb 12 2
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
SVRR supply voltage ripple rejection on and mute 55 63 dB CMRR common mode rejection ratio on 56 80 dB ISRR input signal rejection ratio mute 80 100 dB V
n(o)
Note
1. When operating at VP> 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 ).

ORDERING INFORMATION

TYPE NUMBER
TDA1562Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 TDA1562Q/S10 DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3 TDA1562ST RDBS17P plastic rectangular-DIL-bent-SIL power package; 17 leads (row
TDA1562SD RDBS17P plastic rectangular-DIL-bent-SIL (reverse bent) power package;
noise output voltage on 100 150 µV
PACKAGE
NAME DESCRIPTION VERSION
spacing 2.54 mm)
17 leads (row spacing 2.54 mm)
TDA1562Q; TDA1562ST;
TDA1562SD
SOT577-2
SOT668-2
2003 Feb 12 3
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility

BLOCK DIAGRAM

handbook, full pagewidth
STAT
MODE
IN+
IN
V
ref
SGND
16
4
1
2
14
17
CLASS-B CLASS-H
FAST MUTE
STANDBY
MUTE
ON
75 k
75 k
TEMPERATURE
SENSOR
+
PREAMP
FEEDBACK
CIRCUIT
PREAMP
+
15 k
reference voltage
disable
POWER­STAGE
POWER­STAGE
disable
C1+C1
35
LIFT-SUPPLY
VP*
LOAD
DETECTOR
VP*
LIFT-SUPPLY
TDA1562Q; TDA1562ST;
TDA1562SD
DYNAMIC
V
P2
11
7
OUT+
8
DIAG
OUT
TDA1562
V
P1
910
LOAD DUMP
PROTECTION
CURRENT
PROTECTION
DIAGNOSTIC
INTERFACE
DISTORTION
DETECTOR
TEMPERATURE
PROTECTION
Fig.1 Block diagram.
2003 Feb 12 4
15 13 6
C2+C2
PGND1 PGND2
MGL264
12
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility

PINNING

SYMBOL PIN DESCRIPTION
IN+ 1 signal input (positive) IN 2 signal input (negative) C1 3 negative terminal of lift electrolytic
capacitor 1 MODE 4 mode select input C1+ 5 positive terminal of lift electrolytic
capacitor 1 PGND1 6 power ground 1 OUT+ 7 positive output DIAG 8 diagnostic output (open-collector) V
P1
V
P2
OUT 11 negative output PGND2 12 power ground2 C2+ 13 positive terminal of lift electrolytic
V
ref
C2 15 negative terminal of lift electrolytic
STAT 16 status I/O SGND 17 signal ground
9 supply voltage 1
10 supply voltage 2
capacitor 2
14 internal reference voltage
capacitor 2
handbook, halfpage
TDA1562Q; TDA1562ST;
TDA1562SD
1
IN+
2
IN
3
C1
4
MODE
5
C1+
OUT+
DIAG
V
P1
V
P2
OUT
C2+ V
ref
C2
STAT
SGND
6 7 8
TDA1562Q
9
TDA1562ST
10
TDA1562SD
11 12 13 14 15 16 17
MGL263
PGND1
PGND2
2003 Feb 12 5
Fig.2 Pin configuration.
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility

FUNCTIONAL DESCRIPTION

The TDA1562 contains a mono class-H BTL output power amplifier. At low output power, up to 18 W, the device operates as a normal BTL amplifier. When a larger output voltage swing is required, the internal supply voltage is lifted by means of the external electrolytic capacitors. Due to this momentarily higher supply voltage the obtainable output power is 70 W.
In normal use, when the output is driven with music-like signals, the high output power is only needed during a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution,thereductionindissipationisabout50%when compared to a class-B output amplifier with the same output power. The heatsink should be designed for use with music signals. If the case temperature exceeds 120 °C the device will switch back from class-H to class-B operation. The high power supply voltage is then disabled and the output power is limited to 20 W.
When the supply voltage drops below the minimum operating level, the amplifier will be muted immediately.
Mode select input (pin MODE)
This pin has 3 modes:
1. LOW for standby: the complete circuit is switched off, the supply current is very low
2. MID for mute: the circuit is switched on, but the input signal is suppressed
3. HIGH for on: normal operation, the input signal is amplified by 26 dB.
When the circuit is switched from mute to on or vice versa the actual switching takes place at a zero crossing of the input signal. The circuit contains a quick start option, i.e. when it is switched directly from standby to on, the amplifier is fully operational within 50 ms (important for applications like car telephony and car navigation).
TDA1562Q; TDA1562ST;
TDA1562SD
Status I/O (pin STAT)
INPUT This input has 3 possibilities:
1. LOWforfastmute:thecircuitremainsswitchedon,but the input signal is suppressed
2. MID for class-B: the circuit operates as class-B amplifier, the high power supply voltage is disabled, independent of the case temperature
3. HIGH for class-H: the circuit operates as class-H amplifier, the high power supply voltage is enabled, independent of the case temperature.
When the circuit is switched from fast mute to class-B/H or vice versa the switching is immediately carried out. When thecircuit is switched from class-Bto class-H or vice versa the actual switching takes place at a zero crossing of the input signal.
OUTPUT This output has 3 possibilities:
1. LOW for mute: acknowledge of muted amplifier
2. MID for class-B: the circuit operates as class-B amplifier, the high power supply voltage is disabled, caused by the case temperature Tc> 120 °C
3. HIGH for class-H: the circuit operates as class-H amplifier, the high power supply voltage is enabled, because the case temperature Tc< 120 °C.
Whenthecircuitisswitchedfromclass-Btoclass-Horvice versa the actual switching takes place at a zero crossing of the input signal.
The status I/O pins of maximum 8 devices may be tied together for synchronizing purposes.
2003 Feb 12 6
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
mute
HIGH
MID
LOW
V
VRT
HIGH
MID
LOW
on
0
ref
0
handbook, full pagewidth
supply
voltage
mode select
input
reference
voltage
status I/O
input
TDA1562Q; TDA1562ST;
TDA1562SD
status I/O
output
output voltage
across load
HIGH
MID
LOW
0
quick start
mute
zero crossing change
class-B/H operation
Fig.3 Switching characteristics.
class-H (Tc < 120 °C)
class-B (Tc > 120 °C)
fast mute
function
zero crossing mute
function
supply mute
function
MGL272
2003 Feb 12 7
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
Diagnostic output (pin DIAG)
DYNAMIC DISTORTION DETECTOR (DDD) At the onset of clipping of the output stages, the DDD
becomes active. This information can be used to drive a sound processor or DC-volume control to attenuate the input signal and so limit the distortion.
SHORT-CIRCUIT PROTECTION When a short-circuit occurs at the outputs to ground or to
the supply voltage, the output stages are switched off. They will be switched on again approximately 20 ms after removing the short-circuit. During this short-circuit condition the diagnostic output is continuously LOW.
When a short-circuit occurs across the load, the output stages are switched off during approximately 20 ms. After that time is checked during approximately 50 µs whether the short-circuit is still present. During this short-circuit condition the diagnostic output is LOW for 20 ms and HIGH for 50 µs. The power dissipation in any short-circuit condition is very low.
TDA1562Q; TDA1562ST;
TDA1562SD
TEMPERATURE DETECTION Justbeforethetemperatureprotection becomes active the
diagnostic output becomes continuously LOW.
LOAD DETECTION Directly after the circuit is switched from standby to mute
or on, a built-in detection circuit checks whether a load is present. The results of this check can be detected at the diagnosticoutput,byswitchingthemodeselectinputinthe mute mode.
Since the diagnostic output is an open-collector output, more devices can be connected.
handbook, full pagewidth
mode select
input
output voltage
across load
diagnostic
output
HIGH
MID
LOW
HIGH
LOW
0
no load
clipping signal
short-circuit to
supply or ground
short-circuit across load
t
MGL265
Fig.4 Diagnostic information.
2003 Feb 12 8
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
handbook, full pagewidth
maximum output
voltage swing
diagnostic
output
status I/O
output
class-H
class-B
0
HIGH
LOW
HIGH
MID
TDA1562Q; TDA1562ST;
TDA1562SD
status I/O: high
status I/O: open
LOW
120 145
150 160100
Tj (°C)
MGL266
Fig.5 Behaviour as a function of temperature.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage operating; note 1 18 V
non-operating 30 V
> 2.5 ms; t = 50 ms 45 V
r
I
OSM
I
ORM
V
sc
T
stg
T
amb
T
j
P
tot
load dump; t non-repetitive peak output current 10 A repetitive peak output current 8A short-circuit safe voltage 18 V storage temperature 55 +150 °C ambient temperature 40 −°C junction temperature note 2 150 °C total power dissipation 60 W
Notes
1. When operating at V
> 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6 ).
P
2. Tjis a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device. Tj=Tc+P×R
th(j-c)
, where R
is a fixed value to be used for the calculation of Tj. The rating for Tj limits the
th(j-c)
allowable combinations of power dissipation P and case temperature Tc (in accordance with IEC 60747-1).
2003 Feb 12 9
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD

QUALITY SPECIFICATION

Quality in accordance with
“SNW-FQ-611D”
, if this type is used as an audio amplifier.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th(j-c) th(j-a)
thermal resistance from junction to case 1.5 K/W thermal resistance from junction to ambient in free air 40 K/W

DC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; T
=25°C; measurements in accordance with Fig.9; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies V
V
P
V
P(th+)
V
P(th−)
V
P(H1)
I
q
and V
P1
P2
supply voltage 8 14.4 18 V supply threshold voltage mute on 7 9V supply threshold voltage on mute 7 9V hysteresis (V quiescent current on and mute;
th+
V
)−200 mV
th
110 150 mA
RL= open circuit
I
stb
standby current standby 350µA
Amplifier outputs OUT+ and OUT
V
O
V
output offset voltage on and mute −−100 mV
OO
∆V
OO
output voltage on and mute 6.5 V
delta output offset voltage on mute −−30 mV
Mode select input MODE
V
I
I
I
V
th1+
V
th1
V
msH1
V
th2+
V
th2
V
msH2
input voltage 0 V input current V
= 14.4 V 15 20 µA
MODE
P
V
threshold voltage 1+ standby mute 1 2.2 V threshold voltage 1 mute standby 0.9 2V hysteresis (V
th1+
V
)−200 mV
th1
threshold voltage 2+ mute on 3.3 4.2 V threshold voltage 2 on mute 3.3 4V hysteresis (V
th2+
V
)−200 mV
th2
Status I/O STAT
PIN STAT AS INPUT V
st
I
st(H)
I
st(L)
V
th1+
V
th1
V
stH1
input voltage 0 V HIGH-level input current V LOW-level input current V
STAT STAT
threshold voltage 1+ fast mute class-B −−2V threshold voltage 1 class-B fast mute 1 −−V hysteresis (V
th1+
V
)−200 mV
th1
2003 Feb 12 10
P
V = 14.4 V 3.5 4.5 mA =0V −−350 400 µA
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
th2+
V
th2
V
stH2
threshold voltage 2+ class-B class-H −−4.2 V threshold voltage 2 class-H class-B 3.3 −−V hysteresis (V
th2+
V
)−200 mV
th1
PIN STAT AS OUTPUT I
st(mute)
V
st(mute)
I
st(clB)
V
st(clB)
I
st(clH)
V
st(clH)
T
c(th)
mute acknowledge sink current 2.2 −−mA mute acknowledge output voltage Ist= 2.2 mA −−0.5 V class-B operation output current 15 −−µA class-B operation output voltage Ist=15µA 2.0 3.0 V class-H operation source current 140 −−µA class-H operation output voltage Ist= 140 µAV
2.5 −−V
P
threshold case temperature sensor 120 −°C
Diagnostic output DIAG
V
DIAG
R
L
T
j(th)
output voltage active LOW −−0.6 V load resistance for open load detection 100 −−Ω threshold junction temperature sensor 145 −°C
handbook, full pagewidth
fast mute
on
V
PH1
V
th
V
th+
Fig.6 Supply voltage transfer characteristic.
V
P
MGL267
2003 Feb 12 11
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
handbook, full pagewidth
mute
standby
on
V
msH1
V
th1
V
th1+
V
th2
V
msH2
TDA1562Q; TDA1562ST;
TDA1562SD
V
th2+
ms
MGL268
V
handbook, full pagewidth
class-H
class-B
fast mute
Fig.7 Mode select transfer characteristic.
V
th1
V
stH1
V
th1+
V
th2
V
stH2
V
th2+
V
st
MGL269
Fig.8 Status I/O transfer characteristic.
2003 Feb 12 12
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; Rs=0Ω; f = 1 kHz; T
=25°C; measurements in accordance with Fig.9; unless otherwise
amb
specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
P
o
output power class-B; THD = 10% 16 19 W
class-H; THD = 10% 60 70 W class-H; THD = 0.5% 45 55 W
f
ro(h)(P)
high frequency power roll-off Po (1 dB); THD = 0.5%;
20 kHz
note 1
THD total harmonic distortion P
=1W 0.03 %
o
P
=20W 0.06 %
o
DDD active 2.1 %
G
v
f
ro(h)(G)
Z
differential input impedance 90 150 210 k
i(dif)
SVRR supply voltage ripple
CMRR common mode rejection
voltage gain 25 26 27 dB high frequency gain roll-off Gv (1 dB); note 2 20 −−kHz
on and mute; note 3 55 63 dB
rejection
standby; note 3 90 dB on; note 4 56 80 dB
ratio ISRR input signal rejection ratio mute; note 5 80 100 dB V
n(o)
noise output voltage on; note 6 100 150 µV
mute; notes 6 and 7 60 −µV
Notes
1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.
2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.
3. Supply voltage ripple rejection is measured across R
4. Common mode rejection ratio is measured across RL; common mode voltage V
; ripple voltage V
L
ripple(max)
= 2 V (p-p).
= 2 V (p-p).
cm(max)
CMMR (dB) = differential gain (Gv) + common mode attenuation (αcm). Test set-up according to Fig.10; mismatch of input coupling capacitors excluded.
5. Input signal rejection ratio is measured across RL; input voltage V
= 2 V (p-p). ISSR (dB) = different gain
i(max)
(Gv) + mute attenuation (αm).
6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
7. Noise output voltage is independent of source impedance Rs.
2003 Feb 12 13
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility

TEST AND APPLICATION INFORMATION

STAT
MODE
16
4
CLASS-B CLASS-H
FAST MUTE
STANDBY
MUTE
ON
TEMPERATURE
SENSOR
disable
4700 µF
C1+C1
35
LIFT-SUPPLY
TDA1562Q; TDA1562ST;
TDA1562SD
+ V
2200 µF
V
P1
910
LOAD DUMP
PROTECTION
CURRENT
PROTECTION
100
nF
V
P2
P
100 nF
1/2*R
audio
source
1/2*R
100 nF
10 µF
s
s
SGND
V
IN+
IN
ref
14
17
VP*
1
75 k
75 k
2
15 k
reference voltage
+
PRE-
AMP
FEEDBACK
CIRCUIT
PRE-
AMP
+
POWER­STAGE
POWER­STAGE
disable
VP*
LIFT-SUPPLY
15 13 6
4700 µF
TDA1562
LOAD
DETECTOR
C2+C2
DIAGNOSTIC
INTERFACE
DYNAMIC
DISTORTION
DETECTOR
TEMPERATURE
PROTECTION
12
PGND1 PGND2
7
OUT+
8 DIAG
11 OUT
+ V
10 k
MGL271
P
RL = 4
GND
handbook, full pagewidth
Fig.9 Test and application circuit.
2003 Feb 12 14
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
handbook, full pagewidth
C
i
1
C
i
2
V
CM
14
SGND PGND1 PGND2
9
supply
TDA1562
6
TDA1562Q; TDA1562ST;
TDA1562SD
+ V
P
10
7
R
L
11
1217
GND
MGL270
Fig.10 CMRR test set-up.
2003 Feb 12 15
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier
TDA1562Q; TDA1562ST;
with diagnostic facility

PACKAGE OUTLINES

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
non-concave
D
d
x
E
h
view B: mounting base side
TDA1562SD

SOT243-1

D
h
A
2
117
e
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e
mm
A2bpcD
17.0
4.6
4.4
0.75
0.60
15.5
0.48
0.38
1
e
(1)
deD
24.0
20.0
23.6
19.6
w
b
p
M
(1)
E
h
12.2
10 2.54
11.8
0 5 10 mm
B
j
L
3
scale
1.27
L
E
e
1
2
h
6
5.08
Q
LL3m
3.4
12.4
3.1
11.0
2.4
1.6
e
4.3
m
E
A
c
2
2.1
1.8
v
M
(1)
v
Qj
0.8
0.4w0.03
Z
x
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE VERSION
SOT243-1
IEC JEDEC EIAJ
REFERENCES
2003 Feb 12 16
EUROPEAN
PROJECTION
ISSUE DATE
97-12-16 99-12-17
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2
non-concave
D
d
x
E
h
view B: mounting base side
D
h
A
2
j
117
e
e
0.48
0.38
1
(1)
D
de LL
24.0
20.0
23.6
19.6
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e1e
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
A2bpcE
4.6
4.4
0.75
0.60
13.5
w M
b
p
0 5 10 mm
(1)
D
h
12.2
10 2.54
11.8
scale
1.27 2.54
B
E
A
QL
c
e
2
M
v
E
2
h
6
3.4
3.1
3.75
3.15
L
1
Qj
1
3.75
2.1
3.15
1.8
0.6
(1)
x
0.03
Z
2.00
1.45
w
v
0.4
OUTLINE VERSION

SOT577-2

IEC JEDEC EIAJ
REFERENCES
2003 Feb 12 17
EUROPEAN
PROJECTION
ISSUE DATE
01-01-05
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads (row spacing 2.54 mm) SOT577-2
non-concave
D
d
x
E
h
view B: mounting base side
D
h
A
2
j
117
e
e
0.48
0.38
1
(1)
D
de LL
24.0
20.0
23.6
19.6
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e1e
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
A2bpcE
4.6
4.4
0.75
0.60
13.5
w M
b
p
0 5 10 mm
(1)
D
h
12.2
10 2.54
11.8
scale
1.27 2.54
B
E
A
QL
c
e
2
M
v
E
2
h
6
3.4
3.1
3.75
3.15
L
1
Qj
1
3.75
2.1
3.15
1.8
0.6
(1)
x
0.03
Z
2.00
1.45
w
v
0.4
OUTLINE VERSION

SOT577-2

IEC JEDEC EIAJ
REFERENCES
2003 Feb 12 18
EUROPEAN
PROJECTION
ISSUE DATE
01-01-05
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier
TDA1562Q; TDA1562ST;
with diagnostic facility
RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads (row spacing 2.54 mm)
non-concave
x
D
E
h
view B: mounting base side
d
A
2
TDA1562SD

SOT668-2

D
h
j
1
e
0.75
0.60
e
p
1
cD
0.48
24.0
0.38
23.6
(1)
deD
20.0
19.6
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e
mm
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
13.5
A2b
4.6
4.4
17
wM
b
p
0 5 10 mm
(1)
E
h
12.2
10 2.54
11.8
scale
1.27
B
E
A
QL
c
e
2
L
1
E
e
1
2
h
6
2.54
3.4
3.1
LL
3.75
3.75
3.15
3.15
1
2.1
1.9
v M
(1)
Qj
0.6
w
v
0.4
x
0.03
Z
2.00
1.45
OUTLINE VERSION
SOT668-2
IEC JEDEC EIAJ
REFERENCES
2003 Feb 12 19
EUROPEAN
PROJECTION
ISSUE DATE
01-01-05
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier
TDA1562Q; TDA1562ST;
with diagnostic facility
SOLDERING Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual soldering.Amorein-depthaccountofsoldering ICs can be found in our
Packages”
Wave soldering is the preferred method for mounting of through-hole mount IC packages on a printed-circuit board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
DBS, DIP, HDIP, SDIP, SIL suitable suitable
“Data Handbook IC26; Integrated Circuit
(document order number 9398 652 90011).
PACKAGE
Thetotalcontact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SOLDERING METHOD
DIPPING WAVE
(1)
TDA1562SD
). If the
stg(max)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2003 Feb 12 20
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility

DATA SHEET STATUS

LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
TDA1562Q; TDA1562ST;
TDA1562SD
DEFINITION
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device attheseoratanyotherconditionsabovethosegiveninthe Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to resultin personal injury. Philips Semiconductorscustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Feb 12 21
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
NOTES
2003 Feb 12 22
Philips Semiconductors Preliminary specification
70 W high efficiency power amplifier with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
NOTES
2003 Feb 12 23
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 753503/02/pp24 Date of release:2003 Feb 12 Document order number: 9397750 09939
SCA75
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