Philips TDA1561Q User Manual

INTEGRATED CIRCUITS

DATA SH EET

TDA1561Q

2 × 23 W high efficiency car radio
power amplifier

Preliminary specification
Supersedes data of 1997 Jun 11
File under Integrated Circuits, IC01

1997 Aug 14

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power

TDA1561Q

amplifier

FEA TURES

• Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode

• High Common Mode Rejection Ratio (CMRR)

• Mute/standby/operating/SE-only (mode select pin)

• Zero crossing mute and standby circuit

• Load dump protection circuit

• Short-circuit safe to ground, to supply voltage and

across load

• Loudspeaker protection circuit

• Device switches to single-ended operation at excessive

junction temperatures.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

I

ORM

I

q(tot)

I

stb

 input impedance − 60 − kΩ

Z

i

P

o

G

v

supply voltage DC biased 6.0 14.4 18 V

repetitive peak output current −−4A
total quiescent current RL= ∞−95 150 mA
standby current − 150µA

output power RL = 4 Ω; EIAJ − 36 − W

voltage gain 31 32 33 dB
CMRR common mode rejection ratio f = 1 kHz; R
SVRR supply voltage ripple rejection f = 1 kHz; R

∆V

 DC output offset voltage −−150 mV

O

α

cs

∆G

 channel unbalance −−1dB

v

channel separation Rs=0kΩ 40 60 − dB

GENERAL DESCRIPTION

The TDA1561Q is a monolithic power amplifier in a 13 lead
single-in-line (SIL) plastic power package. It contains two
identical 23 W amplifiers. The dissipation is minimized by
switching from SE to BTL mode, only when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.

non operating −−30 V
load dump −−50 V

THD 10% 21 23 − W

=0Ω−80 − dB

s

=0Ω 45 55 − dB

s

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA1561Q DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6

1997 Aug 14 2

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

BLOCK DIAGRAM

1/2R

V

P

7

MUTE

R

REFERENCE

SOURCES

MUTE/STANDBY

R

THERMAL/

SHORT-CIRCUIT

PROTECTION

MUTE

handbook, full pagewidth

1

IN1

12

CIN

IN2

3

2

P

13

MODE

HV

HIGHER

TEMPERATURE

BTL DISABLE

0.5V

P

TDA1561Q

TDA1561Q

6

OUT1

5

OUT1

11

C

11

9

OUT2

8

OUT2

4

GND1

10

GND2

Fig.1 Block diagram.

1997 Aug 14 3

MLD214

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

PINNING

SYMBOL PIN DESCRIPTION

IN1 1 input 1
HV

P

MODE 3 mute/standby/operating/SE-only
GND1 4 ground 1
OUT1 5 inverting output 1
OUT1 6 non-inverting output 1
V

P

OUT2 8 inverting output 2
OUT2 9 non-inverting output 2
GND2 10 ground 2
C

11

CIN 12 common input
IN2 13 input 2

2 half supply voltage control input

7 supply voltage

11 electrolytic capacitor for

single-ended (SE) mode

handbook, halfpage

IN1

HV

MODE

GND1

OUT1
OUT1

V

OUT2

OUT2

GND2

C

CIN

P

P

11

1
2
3
4
5
6

TDA1561Q

7
8

9
10
11
12

TDA1561Q

IN2

13

MLD215

Fig.2 Pin configuration.

1997 Aug 14 4

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

FUNCTIONAL DESCRIPTION

The TDA1561Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at VP= 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.

With a sine wave input signal the dissipation of a
conventional BTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1561Q (see Fig.9).

In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the dissipation of a conventional BTL amplifier
with the same output power is approximately 70% higher
(see Fig.10).

The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 145 °C. In this case the output power is limited to
5 W per amplifier.

TDA1561Q

The device is fully protected against short-circuiting of the
output pins to ground and to the supply voltage. It is also
protected against short-circuiting the loudspeaker and
high junction temperatures. In the event of a permanent
short-circuit condition to ground or the supply voltage, the
output stage will be switched off causing a low dissipation.
With permanent short-circuiting of the loudspeaker, the
output stage will be repeatedly switched on and off.
The duty cycle in the ‘on’ condition is low enough to
prevent excessive dissipation.

To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
built-in zero-crossing detector allows only switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately avoiding clicks coming from electronic
circuitry preceding the power amplifier.

The voltage of the SE electrolytic capacitor (pin 11) is
always kept at 0.5V
Fig.1). The value of this capacitor has an important
influence on the output power in SE mode, especially at
low signal frequencies, a high value is recommended to
minimize dissipation at low frequencies.

by means of a voltage buffer (see

P

The gain of each amplifier is internally fixed at 32 dB. With
the MODE pin, the device can be switched to the following
modes:

• Standby with low standby current (<50 µA)

• Mute condition, DC adjusted

• On, operation

• SE-only, operation (BTL disabled).

1997 Aug 14 5

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power

TDA1561Q

amplifier

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

V

P(sc)

V

rp

I

OSM

I

ORM

P

tot

T

stg

T

vj

T

amb

THERMAL CHARACTERISTICS

supply voltage operating − 18 V

non operating − 30 V

load dump; tr> 2.5 ms − 50 V
short-circuit safe voltage − 18 V
reverse polarity voltage − 6V
non-repetitive peak output current − 6A
repetitive peak output current − 4A
total power dissipation − 60 W
storage temperature −55 +150 °C
virtual junction temperature − 150 °C
operating ambient temperature −40 −°C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th(j-c)
th(j-a)

thermal resistance from junction to case see note 1 1.3 K/W
thermal resistance from junction to ambient 40 K/W

Note

1. The value of R

depends on the application (see Fig.3).

th(c-h)

1997 Aug 14 6

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

Heatsink design

There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.

With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 5 W. At a virtual junction
temperature of 150 °C and a maximum ambient
temperature of 60 °C, R

= 0.2 K/W, the thermal resistance of the heatsink

R

th(c-h)

should be:

150 60–

---------------------­25×

1.3– 0.2– 7.5 K/W=

Compared to a conventional BTL amplifier, the TDA1561Q
has a higher efficiency. The thermal resistance of the
heatsink should be:

150 60–



1.7

----------------------



25×

1.3– 0.2– 13.8 K/W=

= 1.3 K/W and

th(vj-c)

TDA1561Q

handbook, halfpage

OUT 1 OUT 1

3.6 K/W

0.6 K/W

Fig.3 Thermal equivalent resistance network.

virtual junction

OUT 2 OUT 2

3.6 K/W

3.6 K/W

0.6 K/W

0.1 K/W

case

3.6 K/W

MGC424

1997 Aug 14 7

Philips Semiconductors Preliminary specification

,

2 × 23 W high efficiency car radio power

TDA1561Q

amplifier

DC CHARACTERISTICS

V

= 14.4 V; T

P

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

P

I

q

I

stb

V

C

∆V

 DC output offset voltage on state −−150 mV

O

Mode select switch (see Fig.4)
V

ms

I

ms

Protection

T

dis

=25°C; measured in Fig.6; unless otherwise specified.

amb

supply voltage note 1 6.0 14.4 18.0 V
quiescent current RL= ∞−95 150 mA
standby current − 150µA
average electrolytic capacitor

− 7.1 − V

voltage at pin 11

mute state −−50 mV

voltage at mode select pin
(pin 3)

standby condition 0 − 1V
mute condition 2 − 3V
on condition (SE/BTL mode) 4 − 5.5 V
on condition (SE mode only) 7.5 − V

P

V

switch current through pin 3 Vms=5V −−40 µA

BTL disable temperature − 145 −°C

Note

1. The circuit is DC biased at V

V

handbook, halfpage

P

SE Only

8
7
6
5
4
3
2
1

0

,,,,,

SE/BTL

Mute

Standby

= 6 to 18 V and AC operating at VP=8to18V.

P

MLD216

Fig.4 Switching levels of mode select switch.

1997 Aug 14 8

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power

TDA1561Q

amplifier

AC CHARACTERISTICS

V

= 14.4 V; RL=4Ω; C11= 1000 µF; f = 1 kHz; T

P

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power THD = 1% 15 18 − W

THD total harmonic distortion P
P
B

f

ro(l)

f

ro(h)

G

d
p

v

dissipated power see Figs 9 and 10 W
power bandwidth THD = 1%; Po= −1dB

low frequency roll-off −1 dB; note 2 − 25 − Hz
high frequency roll-off −1 dB 130 −−kHz
closed loop voltage gain 31 32 33 dB

SVRR supply voltage ripple rejection R

CMRR common mode rejection ratio R

Z

 input impedance 45 60 75 kΩ

i

∆Z

 mismatch in input impedance − 1 − %

i

V

SE-BTL

V

out

V

n(o)

α

cs

∆G

v

SE to BTL switch voltage level note 3 − 3 − V

 output voltage-mute (RMS value) Vi= 1 V (RMS) − 50 100 µV

noise output voltage on; Rs=0Ω; note 4 − 160 300 µV

channel separation Rs=0Ω 40 60 − dB

 channel unbalance −−1dB

=25°C; measured in Fig.6; unless otherwise specified.

amb

THD = 10% 21 23 − W
EIAJ − 36 − W
V

= 13.2 V; THD = 0.5% − 14 − W

P

V

= 13.2 V; THD = 10% − 20 − W

P

= 1 W; f = 1 kHz; note 1 − 0.1 − %

o

with respect to 15 W

=0Ω; V

s

ripple

= 2 V (p-p)

− 20 to
15000

− Hz

on; f = 1 kHz 45 60 − dB
mute; f = 1 kHz − 90 − dB
standby; f = 100 Hz to 10 kHz 80 −−dB

=0Ω; f = 1 kHz − 80 − dB

s

=10kΩ; note 4 − 170 −µV

on; R

s

mute; note 5 − 20 −µV

Notes

1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.

2. Frequency response externally fixed (input capacitors determine low frequency roll-off).

3. The SE to BTL switch voltage level depends on V

.

P

4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage is independent of Rs (see Fig.6)(Vi= 0 V).

1997 Aug 14 9

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

TEST AND APPLICATION INFORMATION

handbook, full pagewidth

MODE

R

input 1

s

220 nF

IN1

1

TDA1561Q

1000 µF

V

P

73

16 V

OUT1

6

4 Ω

220 nF

10 nF

3.9 Ω

input 2

0.5R

R

s

s

220 nF

HV

470 nF

CIN

IN2

5

OUT1

(16 V)

100 nF

3.9 Ω

10
nF

3.9 Ω

100
nF

3.9 Ω

P

2

C

11

11

0.5V

12

13

GND1

P

9

TDA1561Q

8

4

10

GND2

MLD223

1000 µF

OUT2

4 Ω

OUT2

Fig.5 Test diagram.

1997 Aug 14 10

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

handbook, full pagewidth

R

0.5R

s

220 nF

100 nF

s

2 x 220 nF

IN1

HV

CIN

P

(1)

MODE

1

2

12

0.5V

P

V

P

73

TDA1561Q

1000 µF

16 V

6

5

C

11

9

OUT1

OUT1

11

OUT2

4 Ω

1000 µF

(16 V)

4 Ω

100 nF

10 nF

3.9 Ω

100 nF

3.9 Ω

10
nF

3.9 Ω

TDA1561Q

100
nF

3.9 Ω

R

s

220 nF

Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.

IN2

13

GND1

4

10

GND2

Fig.6 Application diagram.

1997 Aug 14 11

8

MLD213

OUT2

signal ground

power ground

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

handbook, full pagewidth

43.18

86.36

TDA1561Q

Dimensions in mm.

GND

Vp

Cool Power

m

TDA1561Q

4 × 220 nF

Out 2Out 1

In1 In2sgnd

gnd

Mode
select

mss

Fig.7 PCB layout (component side) for the application of Fig.6.

MGK182

1997 Aug 14 12

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

handbook, full pagewidth

43.18

86.36

TDA1561Q

gnd

Mode

m

In2 In1sgnd

Dimensions in mm.

Fig.8 PCB layout (soldering side) for the application of Fig.6.

1997 Aug 14 13

GND

Vp

mss

Out1Out2

MGK183

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

INTERNAL PIN CONFIGURATIONS

PIN NAME EQUIVALENT CIRCUIT

1,12,13 IN1, CIN, IN2

pin 12

pin 1

2HV

P

handbook, halfpage

TDA1561Q

V

P

pin 13

MLD217

3 MODE

handbook, halfpage

pin 2

pin 3

MLD218

V

P

MLD221

1997 Aug 14 14

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

PIN NAME EQUIVALENT CIRCUIT

5, 9 OUT1, OUT2

handbook, halfpage

6, 8 OUT1, OUT2

handbook, halfpage

V

P

V

P

TDA1561Q

pins 5, 9

MLD220

pins 6, 8

MLD219

11 C

11

MLD222

pin 11

1997 Aug 14 15

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

ADDITIONAL APPLICATION INFORMATION

25

handbook, halfpage

P

d

(W)

20

15

10

5

0

010

(1)

(2)

2

468

MBH692

P

(W)

o

25

handbook, halfpage

P

d

(W)

20

15

10

5

0

010

TDA1561Q

MBH693

(1)

(2)

2

468

P

(W)

o

Input signal 1 kHz, sinusoidal; VP= 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.

Fig.9 Dissipation; sine wave driven.

input output

430 Ω

330 Ω

3.3
kΩ

91
nF

Fig.11 IEC-268 filter.

(1) For a conventional BTL amplifier.
(2) For TDA1561Q.

Fig.10 Dissipation; pink noise through IEC-268

filter.

470 nF2.2 µF 2.2 µF

3.3
kΩ

68
nF

10
kΩ

MGC428

1997 Aug 14 16

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

IN1

P

on condition

1

2

12

1/2V

MODE

P

handbook, full pagewidth

pink
noise

IEC-268
FILTER

220 nF

100 nF

220 nF

HV

CIN

2×

V

P

73

TDA1561Q

TDA1561Q

OUT1

6

10 nF

4 Ω

3.9 Ω

OUT1

5

100 nF

1000 µF

(16 V)

4 Ω

3.9 Ω

10
nF

3.9 Ω

100
nF

3.9 Ω

C

11

11

OUT2

9

8

220 nF

IN2

13

GND1

4

10

GND2

OUT2

MGC427

Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).

12

handbook, halfpage

V

O

(V)

8

4

MBH694

125

handbook, halfpage

I

q

(mA)

100

75

50

25

MBH695

0

08 24

Vms=5V.

16

V

P

(V)

Fig.13 DC output voltage as a function of VP.

1997 Aug 14 17

0

08 24

Vms= 5 V; RI= ∞.

16

V

P

(V)

Fig.14 Quiescent current as a function of VP.

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

V

MODE

MBH696

(V)

160

handbook, halfpage

I

P

(mA)

120

80

40

off mute

0

02 86

SE/BTL SE only

4

80

handbook, halfpage

I

MODE

(µA)

64

48

32

16

0

02 86

TDA1561Q

MBH697

4

V

(V)

MODE

VP= 14.4 V; Vin= 0 mV; RI= ∞.

Fig.15 IP as a function of Vms (pin 3).

60

handbook, halfpage

P

o

(W)

40

20

0

8.4 10.8 1815.6

Both channels driven.
(1) EIAJ.
(2) THD = 10%.
(3) THD = 1%.

13.2

(1)

(2)

(3)

MBH698

VP (V)

2

10

handbook, halfpage

THD + N

(%)

10

1

−1

10

−2

10

−2

10

(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.

Fig.16 Ims as a function of Vms.

(1)

(2)

(3)

−1

10

1

10

Po (W)

MBH699

2

10

Fig.17 Output power as a function of VP.

1997 Aug 14 18

Fig.18 THD + noise as a function of Po.

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

10

handbook, halfpage

THD + N

(%)

1

−1

10

−2

10

10 10

(1)

(2)

2

3

10

MBH700

4

10

f (Hz)

5

10

20

handbook, halfpage

B

p

(W)

18

16

14

12

10

10 10

TDA1561Q

MBH701

(1)
(2)

2

3

10

4

10

f (Hz)

5

10

(1) Po=10W.
(2) Po=1W.

Fig.19 THD + noise as a function of frequency.

36

handbook, halfpage

G

v

(dB)

34

32

30

28

26

10 10

2

3

10

4

10

5

10

MBH702

f (Hz)

(1) For OUT2.
(2) For OUT1.

Fig.20 Power bandwidth at THD = 1%.

−20

handbook, halfpage

SVRR

(dB)

−40

−60

−80

−100

6

10

−120
10 10

2

3

10

MBH703

on

mute

off

4

10

f (Hz)

5

10

Vin=50mV.

Fig.21 Gain as a function of frequency.

1997 Aug 14 19

V

ripple(p-p)

=2V.

Fig.22 SVRR as a function of frequency.

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

handbook, halfpage

0

α

cs

(dB)

−20

−40

−60

−100

10 10

(1) Po=1W.
(2) Po=10W.

(1)

(2)

2

3

10

MBH704

4

10

f (Hz)

5

10

handbook, halfpage

10 kΩ

TDA1561Q

MODE5 V/40 µA

47 µF

MBH690

Fig.23 Channel separation as a function of

frequency.

Fig.24 Mode select circuit.

1997 Aug 14 20

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

handbook, full pagewidth

V

load

V

P

0

(1) (2) (3)

TDA1561Q

MBH691

V

master

V

slave

−V

P

V

P

1/2 V

P

0

V

P

1/2 V

P

0

0 1 2 t (ms) 3

See Fig.5:
V

load=V6−V5

V

master=V6

V

slave=V5

or V

or V

or V8− V

8

9

9

Fig.25 Output waveforms.

1997 Aug 14 21

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

PACKAGE OUTLINE

DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)

non-concave

x

D

E

h

d

A

D

h

view B: mounting base side

2

TDA1561Q

SOT141-6

j

113

e

e

0.48

0.38

1

24.0

23.6

(1)

20.0

19.6

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A2bpcD

17.0

4.6

4.2

0.75

0.60

15.5

w M

b

p

0 5 10 mm

(1)

deD

E

h

12.2

10 3.4

11.8

scale

1

1.7

e

5.08

B

E

A

L

3

L

E

2

h

6

Q

m

LL3m

3.4

12.4

3.1

11.0

2.4

1.6

c

e

2

4.3

2.1

1.8

v M

(1)

v

Qj

0.8

0.25w0.03

Z

x

2.00

1.45

OUTLINE
VERSION

SOT141-6

IEC JEDEC EIAJ

REFERENCES

1997 Aug 14 22

EUROPEAN

PROJECTION

ISSUE DATE

95-03-11
97-12-16

Philips Semiconductors Preliminary specification

2 × 23 W high efficiency car radio power
amplifier

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

(order code 9398 652 90011).

TDA1561Q

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

stg max

). If the

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 14 23

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 547027/1200/05/pp24 Date of release: 1997Aug 14 Document order number: 9397 750 02732