Philips TDA1519C User Manual

INTEGRATED CIRCUITS

DATA SH EET

TDA1519C

22 W BTL or 2 × 11 W
stereo power amplifier

Product specification
Supersedes data of 2001 Aug 24

2004 Jan 28

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

FEATURES

• Requires very fewexternal components for Bridge-Tied
Load (BTL) operation

• Stereo or BTL application

• High output power

• Low offset voltage at output (important for BTL

applications)

• Fixed gain

• Good ripple rejection

• Mute/standby switch

• Load dump protection

• AC and DC short-circuit safe to ground and V

• Thermally protected

• Reverse polarity safe

• Capability to handle high energy on outputs (VP=0V)

• No switch-on/switch-off plops

• Protected against electrostatic discharge

• Low thermal resistance

• Identical inputs (inverting and non-inverting)

• Pin compatible with TDA1519B (TDA1519C and

TDA1519CSP).

P

TDA1519C

GENERAL DESCRIPTION

The TDA1519C is an integrated class-B dual output
amplifierin a 9-leadplastic single in-linepower package or
20-lead heatsink small outline package.

For the TDA1519CTH (SOT418-3), the heatsink is
positioned on top of the package,which allows anexternal
heatsink to be mounted on top. The heatsink of the
TDA1519CTD (SOT397-1) is facing the PCB, allowing the
heatsink to be soldered onto the copper area of the PCB.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2
TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1
TDA1519CTD HSOP20 plastic, heatsink small outline package; 20 leads SOT397-1
TDA1519CTH HSOP20 plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3

PACKAGE

2004 Jan 28 2

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

ORM

I

q(tot)

I

stb

I

sw(on)

Inputs

Zi input impedance BTL 25 −−kΩ

Stereo application

P

o

α

cs

V

n(o)(rms)

BTL application

P

o

SVRR supply voltage ripple rejection RS=0Ω

∆VOO DC output offset voltage −−250 mV
T

j

supply voltage operating 6.0 14.4 17.5 V

non-operating −−30 V

load dump protected −−45 V
repetitive peak output current −−4A
total quiescent current − 40 80 mA
standby current − 0.1 100 µA
switch-on current −−40 µA

stereo 50 −−kΩ

output power THD = 10 %

RL=4Ω−6 − W

RL=2Ω−11 − W
channel separation 40 −−dB
noise output voltage (RMS value) − 150 −µV

output power THD = 10 %; RL=4Ω−22 − W

fi= 100 Hz 34 −−dB

fi= 1 to 10 kHz 48 −−dB

junction temperature −−150 °C

2004 Jan 28 3

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

BLOCK DIAGRAM

handbook, full pagewidth

NINV

RR

TDA1519C

switch

VA

15 kΩ

15 kΩ

mute switch

VA

18.1 kΩ

V

P

18.1 kΩ

C

m

+
+

−

mute
reference
voltage

power stage

+

−

TDA1519C

TDA1519CSP

standby
reference
voltage

mute
switch

4

OUT1

8

M/SS

1

60
kΩ

183

Ω

standby

× 1

3

power stage

183

Ω

9

INV

60
kΩ

input

reference

voltage

GND1 GND2V

The pin numbers refer to the TDA1519C and TDA1519CSP only, for TDA1519CTD and TDA1519CTH see Figs 3 and 4.

VA

C

m

mute switch

signal
ground

2 7

power
ground
(substrate)

5

P

6

MGL491

Fig.1 Block diagram.

2004 Jan 28 4

OUT2

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

PINNING

PIN

SYMBOL

TDA1519C;

TDA1519CSP

TDA1519CTD TDA1519CTH

NINV 1 19 19 non-inverting input
GND1 2 20 20 ground 1 (signal)
RR 3 1 1 supply voltage ripple rejection
OUT1 4 3 3 output 1
GND2 5 5 5 ground 2 (substrate)
OUT2 6 8 8 output 2
V

P

7 10 10 positive supply voltage
M/SS 8 11 11 mute/standby switch input
INV 9 12 12 inverting input
n.c. − 2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 and 13 to 18 not connected

DESCRIPTION

alfpage

NINV

GND1

RR

OUT1

GND2

OUT2

V

M/SS

INV

1
2
3
4
5
6
7

P

8
9

TDA1519C

TDA1519CSP

Fig.2 Pin configuration

TDA1519C and
TDA1519CSP.

MGR561

page

RR

n.c.

OUT1

n.c.

GND2

n.c.
n.c.

OUT2

n.c.

V

1
2
3
4
5
6
7
8
9

10

P

TDA1519CTD

Fig.3 Pin configuration

TDA1519CTD.

MGL937

GND1

20

GND1 RR

19

NINV

18

n.c.

17

n.c.

16

n.c.
n.c.

15

n.c.

14

n.c.

13

INV

12

M/SS

11

20

NINV n.c.

19

n.c. OUT1

18

n.c. n.c.

17

n.c. GND2

16
n.c. n.c.
n.c. n.c.
n.c. OUT2
INV n.c.

M/SS V

TDA1519CTH

15

14

13

12

11

001aaa348

1
2
3
4
5
6
7
8
9

10

P

Fig.4 Pin configuration

TDA1519CTH.

2004 Jan 28 5

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

FUNCTIONAL DESCRIPTION

The TDA1519C contains two identical amplifiers with
differential input stages. The gain of each amplifier isfixed
at 40 dB. A special feature of this device is the
mute/standby switch which has the following features:

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

V
V
E
I

OSM

I

ORM

P
T
T

P

sc
rp
o

tot
j
stg

supply voltage operating − 17.5 V

AC and DC short-circuit-safe voltage − 17.5 V
reverse polarity voltage − 6V
energy handling capability at outputs VP=0V − 200 mJ
non-repetitive peak output current − 6A
repetitive peak output current − 4A
total power dissipation see Fig.5 − 25 W
junction temperature − 150 °C
storage temperature −55 +150 °C

• Low standby current (<100 µA)

• Low mute/standby switching current (allows for low-cost

supply switch)

• Mute condition.

non-operating − 30 V
load dump protected;

− 45 V

during 50 ms; tr≥ 2.5 ms

(1) Infinite heatsink.
(2) R
(3) R

th(c-a)
th(c-a)

= 5 K/W.
= 13 K/W.

30

handbook, halfpage

P

tot

(W)

20

10

0

−25 0 50 150

(1)

(2)

(3)

100

T

Fig.5 Power derating curve for TDA1519C.

amb

MGL492

(°C)

2004 Jan 28 6

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-c)

DC CHARACTERISTICS

VP= 14.4 V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

P

I

q(tot)

V

O

∆VOO DC output offset voltage −−250 mV

Mute/standby switch

V

sw(on)

V

mute

V

stb

Mute/standby condition

V

o

∆VOO DC output offset voltage mute mode −−250 mV
I

stb

I

sw(on)

thermal resistance from junction to ambient;

in free air 40 K/W

TDA1519C, TDA1519CTH and TDA1519CTD
thermal resistance from junction to case;

3 K/W

TDA1519C, TDA1519CTH and TDA1519CTD

=25°C; measured in circuit of Fig.6; unless otherwise specified.

amb

supply voltage note 1 6.0 14.4 17.5 V
total quiescent current − 40 80 mA
DC output voltage note 2 − 6.95 − V

switch-on voltage level 8.5 −−V
mute voltage level 3.3 − 6.4 V
standby voltage level 0 − 2V

output voltage mute mode; Vi= 1 V (maximum);

−−20 mV

fi=20Hzto15kHz

standby current standby mode −−100 µA
switch-on current − 12 40 µA

Notes

1. The circuit is DC adjusted at V

= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.

P

2. At VP= 17.5 to 30 V, the DC output voltage is ≤0.5VP.

2004 Jan 28 7

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; f = 1 kHz; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo application (see Fig.6)

P

o

output power note 1

THD total harmonic distortion Po=1W − 0.1 − %
f

ro(l)

f

ro(h)

G

v(cl)

low frequency roll-off −3 dB; note 2 − 45 − Hz
high frequency roll-off −1dB 20 −−kHz
closed-loop voltage gain 39 40 41 dB

SVRR supply voltage ripple rejection on; notes 3 and 4 40 −−dB

Zi input impedance 50 60 75 kΩ
V

n(o)(rms)

α

cs

∆G

noise output voltage (RMS value) note 7

channel separation RS=10kΩ 40 −−dB

 channel unbalance − 0.1 1 dB

v(ub)

BTL application (see Fig.7)
P

o

output power note 1

THD total harmonic distortion Po=1W − 0.1 − %
B

f

ro(l)

f

ro(h)

G

p

v(cl)

power bandwidth THD = 0.5 %;

low frequency roll-off −1 dB; note 2 − 45 − Hz
high frequency roll-off −1dB 20 −−kHz
closed-loop voltage gain 45 46 47 dB

=25°C; unless otherwise specified.

amb

THD = 0.5 % 4 5 − W
THD = 10 % 5.5 6.0 − W

R

=2Ω; note 1

L

THD = 0.5 % 7.5 8.5 − W
THD = 10 % 10 11 − W

on; notes 3 and 5 45 −−dB
mute; notes 3 and 6 45 −−dB
standby; notes 3

and 6

on; RS=0Ω−150 −µV
on; RS=10kΩ− 250 500 µV
mute; note 8 − 120 −µV

THD = 0.5 % 15 17 − W
THD = 10 % 20 22 − W

VP= 13.2 V; note 1

THD = 0.5 % − 13 − W
THD=10% − 17.5 − W

Po= −1 dB; with
respect to 15 W

80 −−dB

− 35 to 15000 − Hz

2004 Jan 28 8

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SVRR supply voltage ripple rejection on; notes 3 and 4 34 −−dB

on; notes 3 and 5 48 −−dB
mute; notes 3 and 6 48 −−dB
standby;

notes 3 and 6
Zi input impedance 25 30 38 kΩ
V

n(o)(rms)

Notes

1. Output power is measured directly at the output pins of the device.

2. Frequency response externally fixed.

3. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V).

4. Frequency f = 100 Hz.

5. Frequency between 1 and 10 kHz.

6. Frequency between 100 Hz and 10 kHz.

7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

8. Noise output voltage independent of RS (Vi= 0 V).

noise output voltage (RMS value) note 7

on; RS=0Ω−200 −µV
on; RS=10kΩ− 350 700 µV
mute; note 8 − 180 −µV

80 −−dB

2004 Jan 28 9

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

APPLICATION INFORMATION

handbook, full pagewidth

220 nF

60 kΩ

1

signal

ground

38

input

reference

voltage

−

40 dB

+

546

2

power

ground

internal

1/2 V

TDA1519C

1000

µF

100 µF

P

40 dB

standby switch

+

−

60 kΩ

7

MGL493

9

220 nF

TDA1519C

2200

100

nF

µF

inverting inputnon-inverting input

V

P

handbook, full pagewidth

non-inverting input

220 nF

to pin 9

Fig.6 Stereo application diagram (TDA1519C).

38

input

1

signal

ground

60 kΩ

2

reference

voltage

−

40 dB

+

546

power

ground

internal
1/2 V

TDA1519C

RL = 4 Ω

P

+

40 dB

−

standby switch

7

60 kΩ

MGL494

V

P

2200

100

nF

9

to pin 1

µF

Fig.7 BTL application diagram (TDA1519C).

2004 Jan 28 10

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

handbook, halfpage

TDA1519C

60

I

q(tot)
(mA)

50

40

30

020

4 8 12 16

MGR539

VP (V)

BTL application.
R

=4Ω.

L

fi= 1 kHz.

Fig.8 Total quiescent current as a function of the supply voltage.

30

handbook, halfpage

P

o

(W)

20

10

0

020

THD = 10%

0.5%

4 8 12 16

MGR540

VP (V)

Fig.9 Output power as a function of the supply voltage.

2004 Jan 28 11

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

handbook, halfpage

THD

(%)

TDA1519C

Po (W)

MGR541

2

12

8

4

0

−1

10

11010

BTL application.

=4Ω.

R

L

fi= 1 kHz.

Fig.10 Total harmonic distortion as a function of the output power.

0.6

handbook, halfpage

THD

(%)

0.4

0.2

0

10 10

2

10

MGU377

3

fi (Hz)

4

10

BTL application.
RL=4Ω.
Po=1W.

Fig.11 Total harmonic distortion as a function of the operating frequency.

2004 Jan 28 12

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

PACKAGE OUTLINES

SIL9P: plastic single in-line power package; 9 leads

D

d

TDA1519C

SOT131-2

non-concave

x

E

h

view B: mounting base side

B

j

D

h

A

2

E

seating plane

b

19

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT A

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1

max.

2

OUTLINE

VERSION

SOT131-2

4.6

4.4

e

b

b

cD

max.

1.1

p2

0.75

0.48

0.60

0.38

IEC JEDEC JEITA

b

p

(1)

24.0

23.6

REFERENCES

w

M

0 5 10 mm

scale

deD

h

20.0

10 2.54

19.6

E

12.2

11.8

A

1

L

c

Q

(1)

E

h

3.4

6

3.1

Q

Lj

17.2

2.1

16.5

1.8

EUROPEAN

PROJECTION

0.25w0.03

ISSUE DATE

99-12-17
03-03-12

(1)

x

Z

2.00

1.45

2004 Jan 28 13

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

SMS9P: plastic surface mounted single in-line power package; 9 leads

D

y

non-concave

x

d

D

h

heatsink

TDA1519C

SOT354-1

A

2

E

h

91

w

M

0 5 10 mm

scale

(1)

E

h

12.2

10

11.8

0.75

0.60

e

0.48

0.38

(1)

24.0

23.6

b

deD

20.0

19.6

p

Z

DIMENSIONS (mm are the original dimensions)

UNIT A A1A2A3bpcD

4.9

0.35

mm

4.2

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

0.05

4.6

4.4

0.25

j

2.54

heatsink

E

Q

A

1

L

p

c

θ

(A3)
A

E

j

h

3.4

6

3.1

7.4

6.6

L

L

p

3.4

2.1

2.8

1.9

L

Q

wxy θ

0.15

0.030.25

Z

2.00

1.45

(1)

3°
0°

OUTLINE

VERSION

SOT354-1

IEC JEDEC JEITA

REFERENCES

2004 Jan 28 14

EUROPEAN

PROJECTION

ISSUE DATE

99-12-17
03-03-12

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

HSOP20: plastic, heatsink small outline package; 20 leads

D

y

D

1

20

11

D

2

TDA1519C

SOT397-1

E

E

2

c

H

E

A

X

v

M

A

E

D

13.0

12.6

1

w

M

scale

(1)

D

1.1

0.9

E

2

11.1

10.9

1

pin 1 index

1

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

1

max.

0.3

3.6 0.35

0.1

A

3.3

3.0

e

bpc

A

A

2

4

3

0.1

0.53

0

0.40

0.32

0.23

10

b

p

0 5 10 mm

(1)

D

16.0

15.8

E

6.2

5.8

Q

A

2

A1A

4

detail X

e

E

2

1

2.9

2.5

1.27

H

14.5

13.9

E

L

1.1

0.8

Q

1.5

1.4

v

0.25w0.25

p

(A3)

L

p

A

θ

yZ

2.5

0.1

2.0

θ

8°
0°

OUTLINE

VERSION

SOT397-1

IEC JEDEC JEITA

REFERENCES

2004 Jan 28 15

EUROPEAN

PROJECTION

ISSUE DATE

03-02-18
03-07-23

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height

D

c

y

D

1

1

pin 1 index

10

D

2

x

E

E

2

H

E

TDA1519C

SOT418-3

A

X

v

M

A

E

1

20

Z

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

Notes

1. Limits per individual lead.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

2

max.

3.5

3.5 0.35

3.2

e

(1)

bpc

A

A

4

3

+0.08

0.53

−0.04

0.40

0.32

0.23

D

16.0

15.8

11

w

b

p

(2)

D

1

13.0

12.6

M

0 5 10 mm

scale

(2)

E

11.1

10.9

E

6.2

5.8

D

1.1

0.9

2

1

E

2.9

2.5

Q

A

2

A

4

L

p

detail X

e

1.27

H

14.5

13.9

E

2

L

1.1

0.8

Q

1.7

1.5

v

0.25w0.25

p

x

0.03

0.07

(A3)

θ

yZ

2.5

2.0

A

θ

8°
0°

OUTLINE

VERSION

SOT418-3

IEC JEDEC JEITA

REFERENCES

2004 Jan 28 16

EUROPEAN

PROJECTION

ISSUE DATE

02-02-12
03-07-23

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W
stereo power amplifier

SOLDERING
Introduction

Thistextgives a very briefinsight toacomplex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsare mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended. Driven by legislation and environmental
forces the worldwide use of lead-free solder pastes is
increasing.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE

TDA1519C

cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 270 °C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:

• below 225 °C (SnPb process) or below 245 °C (Pb-free
process)

– for all the BGA, HTSSON..T and SSOP-T packages
– for packages with a thickness ≥ 2.5 mm
– for packages with a thickness < 2.5 mm and a

volume ≥ 350 mm3 so called thick/large packages.

• below 240 °C (SnPb process) or below 260 °C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm3 so called small/thin packages.

Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.

Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250 °C or 265 °C, depending on solder
material applied, SnPb or Pb-free respectively.

Thetotalcontact time of successive solderwaves mustnot
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board byscreen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and

stg(max)

). If the

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemount devices (SMDs) or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on four sides,the footprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement andbefore soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be

2004 Jan 28 17

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leadsin the waveranges from 3 to 4 secondsat 250 °C or265 °C, depending on solder material

applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron

applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated
tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

(1)

Through-hole mount CPGA, HCPGA suitable − suitable

DBS, DIP, HDIP, RDBS, SDIP, SIL suitable

Through-hole-

PMFP

(4)

not suitable not suitable −

surface mount
Surface mount BGA, HTSSON..T

SSOP-T

(5)

, TFBGA, USON, VFBGA

DHVQFN, HBCC, HBGA, HLQFP, HSO,

(5)

, LBGA, LFBGA, SQFP,

not suitable suitable −

not suitable
HSOP, HSQFP, HSSON, HTQFP, HTSSOP,
HVQFN, HVSON, SMS

(7)

PLCC

, SO, SOJ suitable suitable −
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO, VSSOP not recommended
CWQCCN..L

(11)

, PMFP

(10)

, WQCCN32L

(11)

not suitable not suitable −

SOLDERING METHOD

WAVE REFLOW

(3)

(6)

−−

suitable −

(7)(8)

suitable −

(9)

suitable −

(2)

DIPPING

Notes

1. Formore detailed information ontheBGA packages refer tothe

“(LF)BGAApplication Note

”(AN01026); order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

4. Hot bar soldering or manual soldering is suitable for PMFP packages.

5. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycleor subjected to infrared reflow soldering with peak temperature
exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.

6. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.

7. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

2004 Jan 28 18

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

8. Wave soldering is suitable for LQFP,QFP and TQFP packages with a pitch (e) larger than 0.8 mm;it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

9. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than

0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

10. Hot bar or manual soldering is suitable for PMFP packages.

11. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.

2004 Jan 28 19

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W

TDA1519C

stereo power amplifier

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers,the highest-levelproduct status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at any otherconditionsabove those given inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. Whenthe product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Jan 28 20

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R32/04/pp21 Date of release: 2004 Jan 28 Document order number: 9397 750 12599

SCA76