Philips TDA1517ATW Datasheet

INTEGRATED CIRCUITS
DATA SH EET
TDA1517ATW
8 W BTL or 2 × 4 W SE power amplifier
Product specification Supersedes data of 2001 Feb 14 File under Integrated Circuits, IC01
2001 Apr 17
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

FEATURES

Requires very few external components
Flexibility in use: mono Bridge-Tied Load (BTL) and
stereo Single-Ended (SE); it should be noted that in stereo applications the outputs of both amplifiers are in opposite phase
High output power
Low offset voltage at output (important for BTL)
Electrostatic discharge protection
Thermal protection
Reverse polarity safe
Capable of handling high energy on outputs (VP=0V)
No switch-on/switch-off plop
Low thermal resistance.

GENERAL DESCRIPTION

Fixed gain
Good ripple rejection
Mode select switch (operating, mute and standby)
AC and DC short-circuit safe to ground and V
P
The TDA1517ATW is an integrated class-AB output amplifier contained in a plastic heatsink thin shrink small outline package (HTSSOP20). The device is primarily developed for multimedia applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
I
ORM
I
q(tot)
I
stb
supply voltage 6 12 18 V repetitive peak output current −−2.5 A total quiescent current 40 80 mA standby current 0.1 100 µA
SE application
P
o
SVRR supply voltage ripple rejection R
α
cs
V
n(o)
input impedance 50 −−k
Z
i
output power THD = 10%; RL=4Ω−4−W
=0 46 −−dB
S
channel separation RS=10k 40 55 dB noise output voltage RS=0Ω−50 −µV
BTL application
P
o
SVRR supply voltage ripple rejection R
output offset voltage −−150 mV
∆V
OO
V
n(o)(offset)
Z
input impedance 25 −−k
i
output power THD = 10%; RL=8Ω−8−W
=0 50 −−dB
S
noise output offset voltage RS=0Ω−70 −µV

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA1517ATW HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads; body
width 4.4 mm
2001 Apr 17 2
SOT527-1
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

BLOCK DIAGRAM

handbook, full pagewidth
non-inverting
input 1
SVRR
V
P1VP2
15
16
3
60 k
2
k
standby
switch
VA
x 1
5
+
+
15 k
15 k
mute switch
VA
18 k
V
P
+ +
mute reference voltage
C
m
8
OUT1a
9
OUT1b
power stage
TDA1517ATW
17
MODE 1 2
mute switch
standby reference voltage
6 7
14 19 20
not connected
18 k
− +
VA
− +
mute switch
4
SGND PGND1 PGND2
inverting
input 2
2
k
18
60 k
input reference voltage
Fig.1 Block diagram.
2001 Apr 17 3
12
OUT2a
13
OUT2b
C
m
power stage
10 11
MGU303
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

PINNING

SYMBOL PIN DESCRIPTION
n.c. 1 not connected n.c. 2 not connected IN1+ 3 non-inverting input 1 SGND 4 signal ground SVRR 5 supply voltage ripple rejection n.c. 6 not connected n.c. 7 not connected OUT1a 8 output 1a OUT1b 9 output 1b PGND1 10 power ground 1 PGND2 11 power ground 2 OUT2a 12 output 2a OUT2b 13 output 2b n.c. 14 not connected V
P1
V
P2
15 supply voltage 1
16 supply voltage 2 MODE 17 mode select switch IN2 18 inverting input 2 n.c. 19 not connected n.c. 20 not connected
handbook, halfpage
1
n.c.
2
n.c.
3
IN1+
4
SGND
5
SVRR
OUT1a OUT1b
PGND1
n.c. n.c.
10
TDA1517ATW
6 7 8 9
Fig.2 Pin configuration.
MGU302
20 19 18 17 16 15 14 13 12 11
n.c. n.c. IN2 MODE V
P2
V
P1
n.c. OUT2b OUT2a PGND2

FUNCTIONAL DESCRIPTION

The TDA1517ATW contains two identical amplifiers with differential input stages. This device can be used for Bridge-Tied Load(BTL) or Single-Ended (SE) applications. The gain of each amplifier is fixed at 20 dB. A special feature of this device is the mode select switch. Since this pin has a very low input current (<40 µA), a low cost supply switch can be used. With this switch the TDA1517ATW can be switched into three modes:
Standby: low supply current
Mute: input signal suppressed
Operating: normal on condition.
2001 Apr 17 4
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT.
V
P
V
PSC
V
rp
ERG
o
I
OSM
I
ORM
P
tot
T
vj
T
stg
T
amb

THERMAL CHARACTERISTICS

supply voltage 18 V AC and DC short-circuit-safe voltage 18 V reverse polarity voltage 6V energy handling capability at outputs VP=0V 200 mJ non-repetitive peak output current 4A repetitive peak output current 2.5 A total power dissipation 5W virtual junction temperature 150 °C storage temperature 55 +150 °C ambient temperature 40 +85 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
tbf −−

DC CHARACTERISTICS

VP= 12 V; T
=25°C; measured in Fig.3; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
I
q
supply voltage note 1 6.0 12 18 V quiescent current RL= ∞−40 80 mA
Operating condition
V
MODE(oper)
I
MODE(oper)
V
O
∆V
OO
mode switch voltage level 8.5 V mode switch current V
=12V 15 40 µA
MODE
DC output voltage 5.7 V
DC output offset voltage −−150 mV
P
V
Mute condition
V
MODE(mute)
V
O
∆V
OO
mode switch voltage level 3.3 6.4 V DC output voltage 5.7 V
DC output offset voltage −−150 mV
Standby condition
V
MODE(stb)
I
stb
mode switch voltage level 0 2V standby current 0.1 100 µA
Note
1. The circuit is DC adjusted at V
= 6 to 18 V and AC operating at VP= 8.5 to 18 V.
P
2001 Apr 17 5
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW

AC CHARACTERISTICS

VP= 12 V; f = 1 kHz; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
SE application; note 1
P
o
output power note 2
THD total harmonic distortion P f
ro(L)
f
ro(H)
G
V
∆G
channel balance −−1dB
V
low frequency roll-off 1 dB; note 3 25 Hz high frequency roll off 1dB 20 −−kHz voltage gain 19 20 21 dB
SVRR supply voltage ripple rejection note 4
Z
input impedance 50 60 75 k
i
V
n(o)(rms)
α
cs
V
o(mote)
noise output voltage (RMS value) note5
channel separation RS=10k 40 55 dB
output voltage in mute note 7 −−2mV BTL application; note 8 P
O
output power note 2
THD total harmonic distortion P f
ro(L)
f
ro(H)
G
V
low frequency roll-off 1 dB; note 3 25 Hz
high frequency roll off 1dB 20 −−kHz
voltage gain 25 26 27 dB SVRR supply voltage ripple rejection note 4
Z
input impedance 25 30 38 k
i
V
n(o)(rms)
V
o(mute)
noise output voltage (RMS value) note5
output voltage in mute note 7 −−2mV
=25°C; unless otherwise specified.
amb
THD = 1% 2.5 3.3 W THD = 10% 3 4 W
=1W 0.1 %
o
on 46 −−dB mute 46 −−dB standby 80 −−dB
on; R
=0Ω−50 −µV
S
on; R
=10kΩ−70 100 µV
S
mute; note 6 50 −µV
THD = 1% 5 6.6 W THD = 10% 6.5 8.0 W
=1W 0.03 %
o
on 50 −−dB mute 50 −−dB standby 80 −−dB
on; R on; R
=0Ω−70 −µV
S
=10kΩ−100 200 µV
S
mute; note 6 60 −µV
2001 Apr 17 6
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