Philips TDA1517ATW Datasheet
INTEGRATED CIRCUITS
DATA SH EET
TDA1517ATW
8 W BTL or 2 × 4 W SE power
amplifier
Product specification
Supersedes data of 2001 Feb 14
File under Integrated Circuits, IC01
2001 Apr 17
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW
FEATURES
• Requires very few external components
• Flexibility in use: mono Bridge-Tied Load (BTL) and
stereo Single-Ended (SE); it should be noted that in
stereo applications the outputs of both amplifiers are in
opposite phase
• High output power
• Low offset voltage at output (important for BTL)
• Electrostatic discharge protection
• Thermal protection
• Reverse polarity safe
• Capable of handling high energy on outputs (VP=0V)
• No switch-on/switch-off plop
• Low thermal resistance.
GENERAL DESCRIPTION
• Fixed gain
• Good ripple rejection
• Mode select switch (operating, mute and standby)
• AC and DC short-circuit safe to ground and V
P
The TDA1517ATW is an integrated class-AB output
amplifier contained in a plastic heatsink thin shrink small
outline package (HTSSOP20). The device is primarily
developed for multimedia applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
P
I
ORM
I
q(tot)
I
stb
supply voltage 6 12 18 V
repetitive peak output current −−2.5 A
total quiescent current − 40 80 mA
standby current − 0.1 100 µA
SE application
P
o
SVRR supply voltage ripple rejection R
α
cs
V
n(o)
input impedance 50 −−kΩ
Z
i
output power THD = 10%; RL=4Ω−4−W
=0Ω 46 −−dB
S
channel separation RS=10kΩ 40 55 − dB
noise output voltage RS=0Ω−50 −µV
BTL application
P
o
SVRR supply voltage ripple rejection R
output offset voltage −−150 mV
∆V
OO
V
n(o)(offset)
Z
input impedance 25 −−kΩ
i
output power THD = 10%; RL=8Ω−8−W
=0Ω 50 −−dB
S
noise output offset voltage RS=0Ω−70 −µV
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TDA1517ATW HTSSOP20 plastic, heatsink thin shrink small outline package; 20 leads; body
width 4.4 mm
2001 Apr 17 2
SOT527-1
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW
BLOCK DIAGRAM
handbook, full pagewidth
non-inverting
input 1
SVRR
V
P1VP2
15
16
3
60
kΩ
2
kΩ
standby
switch
VA
x 1
5
+
−
+
−
15 kΩ
15 kΩ
mute switch
VA
18 kΩ
V
P
+
+
−
mute
reference
voltage
C
m
8
OUT1a
9
OUT1b
power stage
TDA1517ATW
17
MODE
1
2
mute
switch
standby
reference
voltage
6
7
14
19
20
not
connected
18 kΩ
−
+
VA
−
+
mute switch
4
SGND PGND1 PGND2
inverting
input 2
2
kΩ
18
60
kΩ
input
reference
voltage
Fig.1 Block diagram.
2001 Apr 17 3
12
OUT2a
13
OUT2b
C
m
power stage
10 11
MGU303
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW
PINNING
SYMBOL PIN DESCRIPTION
n.c. 1 not connected
n.c. 2 not connected
IN1+ 3 non-inverting input 1
SGND 4 signal ground
SVRR 5 supply voltage ripple rejection
n.c. 6 not connected
n.c. 7 not connected
OUT1a 8 output 1a
OUT1b 9 output 1b
PGND1 10 power ground 1
PGND2 11 power ground 2
OUT2a 12 output 2a
OUT2b 13 output 2b
n.c. 14 not connected
V
P1
V
P2
15 supply voltage 1
16 supply voltage 2
MODE 17 mode select switch
IN2− 18 inverting input 2
n.c. 19 not connected
n.c. 20 not connected
handbook, halfpage
1
n.c.
2
n.c.
3
IN1+
4
SGND
5
SVRR
OUT1a
OUT1b
PGND1
n.c.
n.c.
10
TDA1517ATW
6
7
8
9
Fig.2 Pin configuration.
MGU302
20
19
18
17
16
15
14
13
12
11
n.c.
n.c.
IN2−
MODE
V
P2
V
P1
n.c.
OUT2b
OUT2a
PGND2
FUNCTIONAL DESCRIPTION
The TDA1517ATW contains two identical amplifiers with differential input stages. This device can be used for
Bridge-Tied Load(BTL) or Single-Ended (SE) applications. The gain of each amplifier is fixed at 20 dB. A special feature
of this device is the mode select switch. Since this pin has a very low input current (<40 µA), a low cost supply switch
can be used. With this switch the TDA1517ATW can be switched into three modes:
• Standby: low supply current
• Mute: input signal suppressed
• Operating: normal on condition.
2001 Apr 17 4
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT.
V
P
V
PSC
V
rp
ERG
o
I
OSM
I
ORM
P
tot
T
vj
T
stg
T
amb
THERMAL CHARACTERISTICS
supply voltage − 18 V
AC and DC short-circuit-safe voltage − 18 V
reverse polarity voltage − 6V
energy handling capability at outputs VP=0V − 200 mJ
non-repetitive peak output current − 4A
repetitive peak output current − 2.5 A
total power dissipation − 5W
virtual junction temperature − 150 °C
storage temperature −55 +150 °C
ambient temperature −40 +85 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
tbf −−
DC CHARACTERISTICS
VP= 12 V; T
=25°C; measured in Fig.3; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
I
q
supply voltage note 1 6.0 12 18 V
quiescent current RL= ∞−40 80 mA
Operating condition
V
MODE(oper)
I
MODE(oper)
V
O
∆V
OO
mode switch voltage level 8.5 − V
mode switch current V
=12V − 15 40 µA
MODE
DC output voltage − 5.7 − V
DC output offset voltage −−150 mV
P
V
Mute condition
V
MODE(mute)
V
O
∆V
OO
mode switch voltage level 3.3 − 6.4 V
DC output voltage − 5.7 − V
DC output offset voltage −−150 mV
Standby condition
V
MODE(stb)
I
stb
mode switch voltage level 0 − 2V
standby current − 0.1 100 µA
Note
1. The circuit is DC adjusted at V
= 6 to 18 V and AC operating at VP= 8.5 to 18 V.
P
2001 Apr 17 5
Philips Semiconductors Product specification
8 W BTL or 2 × 4 W SE power amplifier TDA1517ATW
AC CHARACTERISTICS
VP= 12 V; f = 1 kHz; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
SE application; note 1
P
o
output power note 2
THD total harmonic distortion P
f
ro(L)
f
ro(H)
G
V
∆G
channel balance −−1dB
V
low frequency roll-off −1 dB; note 3 − 25 − Hz
high frequency roll off −1dB 20 −−kHz
voltage gain 19 20 21 dB
SVRR supply voltage ripple rejection note 4
Z
input impedance 50 60 75 kΩ
i
V
n(o)(rms)
α
cs
V
o(mote)
noise output voltage (RMS value) note5
channel separation RS=10kΩ 40 55 − dB
output voltage in mute note 7 −−2mV
BTL application; note 8
P
O
output power note 2
THD total harmonic distortion P
f
ro(L)
f
ro(H)
G
V
low frequency roll-off −1 dB; note 3 − 25 − Hz
high frequency roll off −1dB 20 −−kHz
voltage gain 25 26 27 dB
SVRR supply voltage ripple rejection note 4
Z
input impedance 25 30 38 kΩ
i
V
n(o)(rms)
V
o(mute)
noise output voltage (RMS value) note5
output voltage in mute note 7 −−2mV
=25°C; unless otherwise specified.
amb
THD = 1% 2.5 3.3 − W
THD = 10% 3 4 − W
=1W − 0.1 − %
o
on 46 −−dB
mute 46 −−dB
standby 80 −−dB
on; R
=0Ω−50 −µV
S
on; R
=10kΩ−70 100 µV
S
mute; note 6 − 50 −µV
THD = 1% 5 6.6 − W
THD = 10% 6.5 8.0 − W
=1W − 0.03 − %
o
on 50 −−dB
mute 50 −−dB
standby 80 −−dB
on; R
on; R
=0Ω−70 −µV
S
=10kΩ−100 200 µV
S
mute; note 6 − 60 −µV
2001 Apr 17 6
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