Philips SI9925DY Datasheet
M3D315
1. Description
2. Features
Si9925DY
N-channel enhancement mode field-effect transistor
Rev. 01 — 20 July 2001 Product data
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si9925DY in SOT96-1 (SO8).
■ Low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertors
■ DC motor control
c
c
■ Lithium-ion battery applications
■ Notebook PC
■ Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description Simplified outline Symbol
1 source 1 (s
2 gate 1 (g
3 source 2 (s
4 gate 2 (g
5,6 drain 2 (d
7,8 drain 1 (d
)
1
)
1
)
2
)
2
)
2
)
1
pin 1 index
03ab52
12 34
SOT96-1 (SO8)
5678
d1
g1
s1d2g2 s2
03ab58
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 20 V
drain current (DC) T
total power dissipation T
=25°C; pulsed; tp≤ 10 s − 5A
amb
=25°C; pulsed; tp≤ 10 s − 2W
amb
junction temperature − 150 °C
drain-source on-state resistance VGS= 7.2 V; ID=5A 3845mΩ
= 4.5 V; ID=5A 4150mΩ
V
GS
=3V; ID=3.9A 5060mΩ
V
GS
= 2.5 V; ID=1A 6280mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
drain-source voltage (DC) Tj=25to150°C − 20 V
gate-source voltage (DC) −±12 V
drain current (DC) T
peak drain current T
total power dissipation T
=25°C; pulsed; tp≤ 10 s; Figure 2 and 3 − 5A
amb
=70°C; pulsed; tp≤ 10 s; Figure 2 − 4A
T
amb
=25°C; pulsed; tp≤ 10 µs; Figure 3 − 48 A
amb
=25°C; pulsed; tp≤ 10 s; Figure 1 − 2W
amb
=70°C; pulsed; tp≤ 10 s; Figure 1 − 1.3 W
T
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source (diode forward) current (DC) T
=25°C − 1.3 A
amb
9397 750 08415
Product data Rev. 01 — 20 July 2001 2 of 13
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect transistor
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
P
P
der
tot
----------------------
P
tot 25 C°()
100%×= I
03aa11
T
(oC)
amb
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
2
10
I
D
(A)
10
R
DSon
= VDS/ I
03aa19
T
(oC)
amb
der
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
I
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ag07
D
tp = 10 µs
1 ms
1
P
10
-2
10
-1
10
T
=25°C; IDM is single pulse.
amb
t
p
δ =
T
t
p
t
T
1 10 10
D.C.
10 ms
100 ms
10 s
2
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08415
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 20 July 2001 3 of 13
Philips Semiconductors
Si9925DY
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed circuit board;
minimum footprint; Figure 4
7.1 Transient thermal impedance
62.5 K/W
2
10
(K/W)
10
1
10
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
-1
10
-4
10
-3
10
-2
10
-1
P
1 10
δ =
t
p
T
t
(s)
p
T
amb
Z
th(j-amb)
=25°C
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
03af75
t
p
T
t
9397 750 08415
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 20 July 2001 4 of 13
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