Philips SI9410DY Datasheet
M3D315
1. Description
2. Features
Si9410DY
N-channel enhancement mode field-effect transistor
Rev. 02 — 05 July 2001 Product data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si9410DY in SOT96-1 (SO8).
■ Low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertors
■ DC motor control
c
c
■ Lithium-ion battery applications
■ Notebook PC
■ Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description Simplified outline Symbol
1 n/c
2,3 source (s)
4 gate (g)
5,6,7,8 drain (d)
8
1
Top view MBK187
SOT96-1 (SO8)
5
4
g
MBB076
d
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 30 V
drain current (DC) T
total power dissipation T
=25°C; pulsed: tp≤ 10 s − 7A
amb
=25°C; pulsed: tp ≤ 10 s − 2.5 W
amb
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID=7A 2430mΩ
=5V; ID= 4 A 30 40 mΩ
V
GS
= 4.5 V; ID=3.5A 3250mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
drain-source voltage (DC) Tj=25to150°C − 30 V
gate-source voltage (DC) −±20 V
drain current (DC) T
peak drain current T
total power dissipation T
=25°C; pulsed: tp ≤ 10 s; Figure 2 and 3 − 7A
amb
=70°C; pulsed: tp ≤ 10 s; Figure 2 − 5.8 A
T
amb
=25°C; pulsed; tp≤ 10 µs; Figure 3 − 30 A
amb
=25°C; pulsed: tp ≤ 10 s; Figure 1 − 2.5 W
amb
=70°C; pulsed: tp ≤ 10 s; Figure 1 − 1.6 W
T
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source (diode forward) current (DC) T
=25°C; pulsed: tp ≤ 10 s − 2.3 A
amb
9397 750 08238
Product data Rev. 02 — 05 July 2001 2 of 13
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
T
amb
03aa11
(oC)
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
P
tot
P
----------------------
der
P
tot 25 C°()
100%×=
Fig 1. Normalized total power dissipation as a
function of ambient temperature.
2
10
I
D
(A)
10
1
10
10
P
-1
-2
-1
10
R
= V
/ I
DSon
δ =
t
p
T
DS
D
t
p
T
t
1 10 10
T
amb
03aa19
(oC)
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
VGS≥ 10 V
I
D
D
------------------ -
I
D25C°()
100%×=
I
Fig 2. Normalized continuous drain current as a
function of ambient temperature.
03ae46
tp = 10 µs
100 µs
1 ms
10 ms
D.C.
100 ms
VDS (V)
2
T
=25°C; IDM is single pulse
amb
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08238
Product data Rev. 02 — 05 July 2001 3 of 13
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
Si9410DY
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed circuit board;
minimum footprint, t ≤ 10 s Figure 4
7.1 Transient thermal impedance
50 K/W
2
10
Z
th(j-amb)
δ = 0.5
(K/W)
0.2
10
0.1
0.05
0.02
1
-1
10
10 10 10
single pulse
P
-2
10
-1
1 10 10
δ =
t
p
T
2
tp (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
03ae45
t
p
T
t
10
3
9397 750 08238
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 05 July 2001 4 of 13
Loading...