Philips SI4835BDY Service Manual

						Si4835BDY
			New Product			Vishay Siliconix
		P-Channel 30-V (D-S) MOSFET
						FEATURES
PRODUCT SUMMARY
						D TrenchFETr Power MOSFET
VDS (V)		rDS(on) (W)	ID (A)
						D Advanced High Cell Density Process
-30		0.018 @ VGS = -10 V	-9.6			APPLICATIONS
		0.030 @ VGS = -4.5 V	-7.5			D Load Switches
						- Notebook PCs
						- Desktop PCs

S

SO-8

S	1		8	D	G
S				D
	2		7
S				D
	3		6
G				D
	4		5

D

Top View

P-Channel MOSFET

Ordering Information: Si4835BDY

Si4835BDY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
	Parameter		Symbol	10 secs		Steady State	Unit
Drain-Source Voltage			VDS		-30		V
Gate-Source Voltage			VGS		"25
Continuous Drain Current (T	= 150_C)a	TA = 25_C	I	-9.6		-7.4
J		TA = 70_C	D	-7.7		-5.9	A
Pulsed Drain Current			IDM		-50
continuous Source Current (Diode Conduction)a			I	-2.1		-1.3
			S
Maximum Power Dissipationa		TA = 25_C	P	2.5		1.5	W
		TA = 70_C	D	1.6		0.9
Operating Junction and Storage Temperature Range			TJ, Tstg		-55 to 150		_C
THERMAL RESISTANCE RATINGS
	Parameter		Symbol	Typical		Maximum	Unit
		t v 10 sec		39		50
Maximum Junction-to-Ambienta			R
		Steady State		70		85
			thJA				_
							C/W
Maximum Junction-to-Foot (Drain)		Steady State	RthJF	18		22
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72029							www.vishay.com
S-31062—Rev. C, 26-May-03							1

Si4835BDY

Vishay Siliconix		New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter	Symbol	Test Condition			Min	Typ	Max	Unit
Static
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = -250 mA			-1.0		-3.0	V
Gate-Body Leakage	IGSS	VDS = 0 V, VGS = "25 V					"100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = -24 V, VGS = 0 V					-1	mA
		VDS = -24 V, VGS = 0 V, TJ = 55_C					-5
On-State Drain Currenta	I	V	v -5 V, V	= -10 V	-50			A
	D(on)	DS	GS
Drain-Source On-State Resistancea	rDS(on)	VGS = -10 V, ID = -9.6 A				0.014	0.018
								W
		VGS = -4.5 V, ID = -7.5 A				0.023	0.030
Forward Transconductancea	gfs	VDS = -15 V, ID = -9.6 A				30		S
Diode Forward Voltagea	V	I	= -2.1 A, V	= 0 V		-0.8	-1.2	V
	SD	S	GS
Dynamicb
Total Gate Charge	Qg					25	37
Gate-Source Charge	Qgs	VDS = -15 V, VGS = -5 V, ID = -9.6 A				6.5		nC
Gate-Drain Charge	Qgd					12.5
Gate Resistance	Rg				1.0	2.9	4.9	W
Turn-On Delay Time	td(on)					15	25
Rise Time	tr	VDD = -15 V, RL		= 15 W		13	20
Turn-Off Delay Time	td(off)	ID ^ -1 A, VGEN = -10 V, RG = 6 W				60	100	ns
Fall Time	tf					45	70
Source-Drain Reverse Recovery Time	trr	IF = -2.1 A, di/dt = 100 A/ms				45	80

Notes

a.Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

			Output Characteristics
	50
		VGS = 10 thru 5 V
	40				4 V
(A)							(A)
Current	30						Current
Drain	20						Drain
-							-
D							D
I	10						I
							3 V
	0
	0	1	2	3	4	5	6
		VDS	- Drain-to-Source Voltage (V)
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2

Transfer Characteristics

50
	TC = -55_C
40	25_C
	125_C
30

20

10

0

0	1	2	3	4	5
	VGS -	Gate-to-Source Voltage (V)

Document Number: 72029

S-31062—Rev. C, 26-May-03