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SI4835BDY

Philips SI4835BDY Service Manual

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Si4835BDY
30
Conti
t (TJ = 150_C)
a
I
A
C/W
PRODUCT SUMMARY
V
(V) r
DS
-
-
Ordering Information: Si4835BDY
DS(on)
0.018 @ VGS = -10 V
0.030 @ VGS = -4.5 V -7.5
SD
1
S
2
SD
3
G
4
New Product
P-Channel 30-V (D-S) MOSFET
FEATURES
(W) I
D
-9.6
(A)
SO-8
8
D
7 6
D
5
Top View
Si4835BDY-T1 (with Tape and Reel)
D TrenchFETr Power MOSFET D Advanced High Cell Density Process
APPLICATIONS
D Load Switches
- Notebook PCs
- Desktop PCs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V Gate-Source Voltage V
a
=
nuous Drain Curren
Pulsed Drain Current I continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
P
DM
I
DS
GS
D
S
D
stg
-9.6
-7.7 -5.9
-2.1 -1.3
2.5 1.5
1.6 0.9
-30
"25
-50
-55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 10 sec
Steady State
R
thJA
thJF
39 50 70 85 18 22
V
-7.4
W
_C/W
Document Number: 72029 S-31062—Rev. C, 26-May-03
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1
Si4835BDY
VDD = -15 V, RL = 15 W
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
V
fs
SD
Total Gate Charge Q Gate-Source Charge Q Gate-Drain Charge Q
gs gd
Gate Resistance R Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Source-Drain Reverse Recovery Time t
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
d(on)
r
d(off)
f
rr
g
g
VDS = VGS, I
VDS = 0 V, V
= - 250 mA -1.0 -3.0 V
D
= "25 V "100 nA
GS
VDS = -24 V, VGS = 0 V -1
VDS = -24 V, VGS = 0 V, TJ = 55_C -5
VDS v -5 V, VGS = -10 V -50 A
VGS = -10 V, ID = -9.6 A 0.014 0.018 VGS = -4.5 V, ID = -7.5 A 0.023 0.030
V
= -15 V, I
DS
= -9.6 A
D
IS = -2.1 A, VGS = 0 V -0.8 -1.2 V
V
= - 15 V, VGS = -5 V, ID = -9.6 A 6.5 nC
DS
VDD = -15 V, RL = 15 W
ID ^ -1 A, V
= - 10 V, RG = 6 W
GEN
IF = -2.1 A, di/dt = 100 A/ms 45 80
30 S
25 37
12.5
1.0 2.9 4.9 W 15 25 13 20 60 100 45 70
mA
W
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
40
30
20
- Drain Current (A)I
D
10
0
0123456
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2
Output Characteristics Transfer Characteristics
VGS = 10 thru 5 V
4 V
3 V
VDS - Drain-to-Source Voltage (V)
50
TC = -55_C
40
25_C
125_C
30
20
- Drain Current (A)I
D
10
0
012345
VGS - Gate-to-Source Voltage (V)
Document Number: 72029
S-31062—Rev. C, 26-May-03
Si4835BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
W )
0.04
- On-Resistance (r
DS(on)
0.03
0.02
0.01
0.00
10
VGS = 4.5 V
VGS = 10 V
0 1020304050
- Drain Current (A)
I
D
Gate Charge
VDS = 15 V I
= 9.6 A
D
8
3200
2400
1600
C - Capacitance (pF)
800
C
0
0 6 12 18 24 30
On-Resistance vs. Junction Temperature
1.6 VGS = 10 V
W)
I
1.4
Capacitance
C
oss
rss
VDS - Drain-to-Source Voltage (V)
= 9.6 A
D
C
iss
- Gate-to-Source Voltage (V)
GS
V
- Source Current (A)I
S
6
4
2
0
0 1020304050
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
60
TJ = 150_C
10
TJ = 25_C
1.2
(Normalized)
- On-Resistance (r
1.0
DS(on)
0.8
0.6
-50 -25 0 25 50 75 100 125 150 T
- Junction Temperature (_C)
J
0.05
0.04
W )
ID = 9.6 A
0.03
0.02
- On-Resistance (r
DS(on)
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72029 S-31062—Rev. C, 26-May-03
0.00 0246810
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3
Si4835BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
ID = 250 mA
0.2
Variance (V)V
0.0
GS(th)
-0.2
-0.4
-50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C)
Safe Operating Area
r
DS(on)
100
Limited
10
80
60
40
Power (W)
20
0
I
DM
Single Pulse Power, Junction-to-Ambient
-2
10
Limited
P(t) = 0.0001
P(t) = 0.001
-1
1 60010010
10
Time (sec)
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01 10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
-4
I
D(on)
1
Limited
P(t) = 0.01
P(t) = 0.1
- Drain Current (A)I
D
0.1
TA = 25_C
Single Pulse
BV
DSS
Limited
P(t) = 1 P(t) = 10
dc
0.01
0.1 1 10 100 VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
t
thJA
t
thJA
100
1 2
= 70_C/W
(t)
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
-3
10
-2
10
-1
1 10 60010
Square Wave Pulse Duration (sec)
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Document Number: 72029
S-31062—Rev. C, 26-May-03
Si4835BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
Single Pulse
-4
10
-3
10
-2
10
Square Wave Pulse Duration (sec)
Thermal Impedance
Normalized Effective Transient
-1
11010
Document Number: 72029 S-31062—Rev. C, 26-May-03
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5
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