Philips SI4835BDY Service Manual

Si4835BDY

30

Conti

t (TJ = 150_C)

a

I

A

C/W

PRODUCT SUMMARY

V

(V) r

DS

-

-

Ordering Information: Si4835BDY

DS(on)

0.018 @ VGS = -10 V

0.030 @ VGS = -4.5 V -7.5

SD

1

S

2

SD

3

G

4

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

(W) I

D

-9.6

(A)

SO-8

8

D

7
6

D

5

Top View

Si4835BDY-T1 (with Tape and Reel)

D TrenchFETr Power MOSFET
D Advanced High Cell Density Process

APPLICATIONS

D Load Switches

- Notebook PCs

- Desktop PCs

S

G

D

P-Channel MOSFET

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 10 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I
continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C
TA = 70_C

TA = 25_C
TA = 70_C

P

DM

I

DS

GS

D

S

D

stg

-9.6

-7.7 -5.9

-2.1 -1.3

2.5 1.5

1.6 0.9

-30

"25

-50

-55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 10 sec

Steady State

R

thJA

thJF

39 50
70 85
18 22

V

-7.4

W

_C/W

Document Number: 72029
S-31062—Rev. C, 26-May-03

www.vishay.com

1

Si4835BDY

VDD = -15 V, RL = 15 W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

fs

SD

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

gs
gd

Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

d(on)

r

d(off)

f

rr

g

g

VDS = VGS, I

VDS = 0 V, V

= - 250 mA -1.0 -3.0 V

D

= "25 V "100 nA

GS

VDS = -24 V, VGS = 0 V -1

VDS = -24 V, VGS = 0 V, TJ = 55_C -5

VDS v -5 V, VGS = -10 V -50 A

VGS = -10 V, ID = -9.6 A 0.014 0.018
VGS = -4.5 V, ID = -7.5 A 0.023 0.030

V

= -15 V, I

DS

= -9.6 A

D

IS = -2.1 A, VGS = 0 V -0.8 -1.2 V

V

= - 15 V, VGS = -5 V, ID = -9.6 A 6.5 nC

DS

VDD = -15 V, RL = 15 W

ID ^ -1 A, V

= - 10 V, RG = 6 W

GEN

IF = -2.1 A, di/dt = 100 A/ms 45 80

30 S

25 37

12.5

1.0 2.9 4.9 W
15 25
13 20
60 100
45 70

mA

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

50

40

30

20

- Drain Current (A)I

D

10

0

0123456

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2

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

4 V

3 V

VDS - Drain-to-Source Voltage (V)

50

TC = -55_C

40

25_C

125_C

30

20

- Drain Current (A)I

D

10

0

012345

VGS - Gate-to-Source Voltage (V)

Document Number: 72029

S-31062—Rev. C, 26-May-03