Philips SI4800 Datasheet
M3D315
1. Description
2. Features
Si4800
N-channel enhancement mode field-effect transistor
Rev. 01 — 13 July 2001 Product data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
Si4800 in SOT96-1 (SO8).
■ Low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertors
■ DC motor control
c
c
■ Lithium-ion battery applications
■ Notebook PC
■ Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description Simplified outline Symbol
1,2,3 source (s)
8
4 gate (g)
5,6,7,8 drain (d)
1
Top view MBK187
SOT96-1 (SO8)
5
4
g
MBB076
d
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
P
T
R
DS
D
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 30 V
drain current T
total power dissipation T
=25°C; pulsed; tp≤ 10 s − 9A
amb
=25°C; pulsed; tp≤ 10 s − 2.5 W
amb
junction temperature − 150 °C
drain-source on-state resistance VGS= 10 V; ID= 9 A; Tj=25°C 15.5 18.5 mΩ
= 4.5 V; ID= 7 A; Tj=25°C 27.5 33 mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
drain-source voltage (DC) Tj=25to150°C − 30 V
gate-source voltage (DC) −±20 V
drain current T
peak drain current T
total power dissipation T
=25°C; pulsed; tp≤ 10 s; Figure 2 and 3 − 9A
amb
=70°C; pulsed; tp≤ 10 s; Figure 2 − 7A
T
amb
=25°C; pulsed; tp≤ 10 µs; Figure 3 − 40 A
amb
=25°C; pulsed; tp≤ 10 s; Figure 1 − 2.5 W
amb
=70°C; pulsed; tp≤ 10 s; Figure 1 − 1.6 W
T
amb
storage temperature −55 +150 °C
operating junction temperature −55 +150 °C
source (diode forward) current T
=25°C; pulsed; tp≤ 10 s − 2.3 A
amb
9397 750 08412
Product data Rev. 01 — 13 July 2001 2 of 13
© Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
120
P
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
P
P
der
tot
----------------------
P
tot 25 C°()
100%×= I
03aa11
T
(oC)
amb
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
2
10
I
D
(A)
10
R
DSon
= VDS/ I
D
03aa19
T
(oC)
amb
der
120
I
der
(%)
100
80
60
40
20
0
0 25 50 75 100 125 150 175
I
D
------------------ -
I
D25C°()
100%×=
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03af84
tp = 10 µs
1 ms
10 ms
1
P
-1
10
-2
10
-1
10
T
=25°C; IDM is single pulse.
amb
t
p
δ =
T
t
p
t
T
1 10 10
D.C.
100 ms
10 s
2
(V)
V
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08412
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 13 July 2001 3 of 13
Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed circuit board; tp≤ 10 s;
minimum footprint; Figure 4
7.1 Transient thermal impedance
50 K/W
2
10
(K/W)
10
1
10
10
δ = 0.5
0.2
0.1
0.05
0.02
-1
-2
-4
10
single pulse
-3
10
10
-2
10
-1
1 10 10
P
δ =
t
p
T
2
(s)
t
p
T
amb
Z
th(j-amb)
=25°C
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
03af83
t
p
T
t
10
3
9397 750 08412
© Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 01 — 13 July 2001 4 of 13
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