Philips SI2302DS Datasheet
M3D088
1. Description
2. Features
SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001 Product data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23.
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible
■ Subminiature surface mount package.
3. Applications
■ Battery management
■ High speed switch
■ Low power DC to DC converter.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
2 source (s)
3 drain (d)
12
Top view
3
MSB003
SOT23
g
MBB076
d
s
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
I
D
P
T
R
DS
tot
j
DSon
drain-source voltage (DC) Tj=25to150°C − 20 V
drain current (DC) Tsp=25°C; VGS= 4.5 V − 2.5 A
total power dissipation Tsp=25°C − 0.83 W
junction temperature − 150 °C
drain-source on-state resistance VGS= 4.5 V; ID=3.6A 5685mΩ
= 2.5 V; ID= 3.1 A 77 115 mΩ
V
GS
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
drain-source voltage (DC) Tj=25to150°C − 20 V
gate-source voltage (DC) −±8V
drain current (DC) Tsp=25°C; VGS= 4.5 V; Figure 2 and 3 − 2.5 A
=70°C; VGS= 4.5 V; Figure 2 − 2A
T
sp
peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; Figure 3 − 10 A
total power dissipation Tsp=25°C; Figure 1 − 0.83 W
storage temperature −65 +150 °C
operating junction temperature −65 +150 °C
source (diode forward) current (DC) Tsp=25°C − 0.7 A
9397 750 09107
Product data Rev. 02 — 20 November 2001 2 of 12
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
120
P
der
(%)
80
40
0
0 50 100 150 200
P
P
der
tot
----------------------
P
tot 25 C°()
100%×= I
03aa17
T
(oC)
sp
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
2
10
I
D
(A)
10
R
DSon
= V
DS
/ I
D
120
I
der
(%)
80
40
0
0 50 100 150 200
I
D
der
------------------ -
I
D25C°()
100%×=
03aa25
(oC)
T
sp
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
03ae92
tp = 10 µs
1
10
10
-1
-2
-1
10
1 10 10
DC
1 ms
10 ms
100 ms
V
DS
(V)
2
Tsp=25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09107
Product data Rev. 02 — 20 November 2001 3 of 12
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-sp)
thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4 150 K/W
7.1 Transient thermal impedance
10
Z
th(j-sp)
(K/W)
10
10
1
3
2
10
δ = 0.5
0.2
0.1
0.05
0.02
-4
single pulse
10
P
t
p
-3
10
-2
10
-1
1 10
03ae91
t
p
δ
=
T
t
T
t
(s)
p
Tsp=25°C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 09107
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 4 of 12
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