Philips SA636D, SA636DK Datasheet

RF COMMUNICATIONS PRODUCTS

SA636

Low voltage high performance mixer FM IF system with high-speed RSSI

Product specification

Replaces data of 1994 Jun 16	1997 Nov 07
IC17 Data Handbook

Philips Semiconductors

Philips Semiconductors	Product specification

Low voltage high performance mixer FM IF

SA636

system with high-speed RSSI

DESCRIPTION

The SA636 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator, wideband data output and fast RSSI op amps. The SA636 is available in 20-lead SSOP (shrink small outline package).

The SA636 was designed for high bandwidth portable communication applications and will function down to 2.7V. The RF section is similar to the famous SA605. The data output has a minimum bandwidth of 600kHz. This is designed to demodulate wideband data. The RSSI output is amplified. The RSSI output has access to the feedback pin. This enables the designer to adjust the level of the outputs or add filtering.

SA636 incorporates a power down mode which powers down the device when Pin 8 is low. Power down logic levels are CMOS and TTL compatible with high input impedance.

APPLICATIONS

•DECT (Digital European Cordless Telephone)

•Digital cordless telephones

•Digital cellular telephones

•Portable high performance communications receivers

•Single conversion VHF/UHF receivers

•FSK and ASK data receivers

•Wireless LANs

FEATURES

•Wideband data output (600kHz min.)

•Fast RSSI rise and fall times

•Low power consumption: 6.5mA typ at 3V

•Mixer input to >500MHz

•Mixer conversion power gain of 11dB at 240MHz

•Mixer noise figure of 12dB at 240MHz

PIN CONFIGURATION

DK Package

RFIN	1		20	MIXER OUT
RF BYPASS	2		19	IF AMP DECOUPLING
XTAL OSC (EMITTER)	3		18	IF AMP IN
XTAL OSC (BASE)	4		17	IF AMP DECOUPLING
VCC	5		16	IF AMP OUT
RSSI FEEDBACK	6		15	GND
RSSIOUT				LIMITER IN
	7		14
POWER DOWN CONTROL	8		13	LIMITER DECOUPLING
DATA OUT	9		12	LIMITER DECOUPLING
QUADRATURE IN				LIMITER OUT
	10		11

SR00491

Figure 1. Pin Configuration

•XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local oscillator can be injected)

•92dB of IF Amp/Limiter gain

•25MHz limiter small signal bandwidth

•Temperature compensated logarithmic Received Signal Strength Indicator (RSSI) with a dynamic range in excess of 90dB

•RSSI output internal op amp

•Internal op amps with rail-to-rail outputs

•Low external component count; suitable for crystal/ceramic/LC filters

•Excellent sensitivity: 0.54μV into 50Ω matching network for 12dB SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF at 240MHz and IF at 10.7MHz

•ESD hardened

•10.7MHz filter matching (330Ω)

•Power down mode (ICC = 200μA)

ORDERING INFORMATION

DESCRIPTION	TEMPERATURE RANGE	ORDER CODE	DWG #
20-Pin Plastic Shrink Small Outline Package (Surface-mount)	°	SA636DK	SOT266-1
	-40 to +85 C

1997 Nov 07

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853-1757 18664

Philips Semiconductors	Product specification

Low voltage high performance mixer FM IF system

SA636

with high-speed RSSI

BLOCK DIAGRAM

20	19	18	17	16	15	14	13		12	11
			IF		GND
							LIMITER
			AMP
	MIXER
					FAST			QUAD
		OSCILLATOR			RSSI
				VCC	±	+	PWR	±	+
							DWN
		E	B		RSSI				AUDIO
1	2	3	4	5	6	7	8		9	10	SR00492

Figure 2. Block Diagram

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RATING

UNITS

VCC

Single supply voltage

0.3 to 7

V

VIN

Voltage applied to any other pin

±0.3 to (VCC+0.3)

V

TSTG

Storage temperature range

-65 to +150

°C

T

Operating ambient temperature range SA636

±40 to +85

°

A

C

NOTE: θJA, Thermal impedance

DK package

117°C/W

DC ELECTRICAL CHARACTERISTICS

VCC = +3V,

TA = 25°C; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

SA636

UNITS

MIN

TYP

MAX

VCC

Power supply voltage range

2.7

3.0

5.5

V

ICC

DC current drain

Pin 8 = HIGH

5.5

6.5

7.5

mA

Input current

Pin 8 LOW

±10

10

μA

Pin 8 HIGH

±10

10

Input level

Pin 8 LOW

0

0.3VCC

V

Pin 8 HIGH

0.7VCC

VCC

ICC

Standby

Pin 8 = LOW

0.2

0.5

mA

tON

Power up time

RSSI valid (10% to 90%)

10

μs

tOFF

Power down time

RSSI invalid (90% to 10%)

5

μs

1997 Nov 07

3

Philips Semiconductors	Product specification

Low voltage high performance mixer FM IF system

SA636

with high-speed RSSI

AC ELECTRICAL CHARACTERISTICS

TA = 25°C; VCC = +3V, unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level = -45dBm; FM modulation = 1kHz with ±125kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.

				LIMITS
SYMBOL	PARAMETER	TEST CONDITIONS		SA636		UNITS
			MIN	TYP	MAX
Mixer/Osc section (ext LO = 160mVRMS)
fIN	Input signal frequency			500		MHz
fOSC	External oscillator (buffer)			500		MHz
	Noise figure at 240MHz			12		dB
	Third-order input intercept point	Matched f1=240.05; f2=240.35MHz		-16		dBm
	Conversion power gain	Matched 14.5dBV step-up	8	11	14	dB
	RF input resistance	Single-ended input		700		Ω
	RF input capacitance			3.5		pF
	Mixer output resistance	(Pin 20)		330		Ω
IF section
	IF amp gain	330Ω load		38		dB
	Limiter gain	330Ω load		54		dB
	Input limiting -3dB	Test at Pin 18		±105		dBm
	AM rejection	80% AM 1kHz		50		dB
	Data level	RLOAD = 100kΩ	120	130		mVRMS
	3dB data bandwidth		600	700		kHz
	SINAD sensitivity	RF level = -111dBm		16		dB
THD	Total harmonic distortion			-43	-38	dB
S/N	Signal-to-noise ratio	No modulation for noise		60		dB
		IF level = -118dBm		0.2	0.5	V
	IF RSSI output with buffer	IF level = -68dBm	0.3	0.6	1.0	V
		IF level = -10dBm	0.9	1.3	1.8	V
	IF RSSI output rise time	IF frequency = 10.7MHz
	(10kHz pulse, no 10.7MHz filter)	RF level = -56dBm		1.2		μs
	(no RSSI bypass capacitor)	RF level = -28dBm		1.1		μs
	IF RSSI output fall time	IF frequency = 10.7MHz
	(10kHz pulse, no 10.7MHz filter)	RF level = -56dBm		2.0		μs
	(no RSSI bypass capacitor)	RF level = -28dBm		7.3		μs
	RSSI range			90		dB
	RSSI accuracy			+1.5		dB
	IF input impedance			330		Ω
	IF output impedance			330		Ω
	Limiter input impedance			330		Ω
	Limiter output impedance			300		Ω
	Limiter output level with no load			130		mVRMS
RF/IF section (int LO)
	System RSSI output	RF level = -10dBm		1.4		V
	System SINAD	RF level = -106dBm		12		dB

1997 Nov 07

4

Philips Semiconductors	Product specification

Low voltage high performance mixer FM IF system

SA636

with high-speed RSSI

PERFORMANCE CHARACTERISTICS

	9.0
	8.5
(mA)	8.0									VCC = 5V
CURRENT	7.5
	7.0									VCC = 3V
SUPPLY	6.5
										VCC = 2.7V
	6.0
	5.5
	5.0
	±50 ±40 ±30	±20	±10	0	10	20	30	40	50	60	70	80	90
			TEMPERATURE (°C)

Supply Current vs Temperature and Supply Voltage

20

	19								RF level = -45 dBm
	18
	17
	16
GAINMIXER (dB)	15
	12				5.5V
	14
	13
				3.0V
	11
	10
									2.7V
	9
	8
	7
	6
	5
	±40	0	25						70		85
			Temperature (°C)

Mixer Power Gain vs Temperature and Supply Voltage

	300
	250
(mVrms)				5.5V
	200
REFERENCE				3.0V
	150				2.7V
AUDIO	100
	50
	0
	±40	0	25	70	85

Temperature (°C)

Audio Reference Level vs Temperature and Supply Voltage

	0.50
	0.45
(mA)	0.40
CURRENT	0.35
	VCC = 5V
	0.30
SUPPLY
	VCC = 3V
	0.25
DOWN	0.20
	VCC	= 2.7V
POWER	0.15
	0.10
	0.05
	0.00
	±50±40 ±30 ±20 ±10	0	10	20	30	40	50	60	70	80	90 100

TEMPERATURE (°C)

Power Down Supply Current vs Temperature and Supply Voltage

±5

±7

RF level = -45 dBm

	±9
(deB)	±11
	±13
IIP3			5.5V
	±15				2.7V
MIXER
				3.0V
	±17
	±19
	±21
	±23
	±25
	±40	0	25	70	85

Temperature (°C)

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

20

AUDIO

0

±20

AM REJECTION

(dB)±40
AUDIO	DISTORTION
±60
±80	NOISE
±100	12dB SINAD
±120
	±50 ±40 ±30 ±20 ±10	0	10	20	30	40	50	60	70	80	90
		TEMPERATURE (°C)

12dB SINAD and Relative Audio, THD, Noise and AM Rejection for VCC = 3V vs Temperature

RF = 240MHz, Level = ±68dBm, Deviation = 125kHz SR00493

Figure 3. Performance Characteristics

1997 Nov 07

5

Philips Semiconductors	Product specification

Low voltage high performance mixer FM IF system

SA636

with high-speed RSSI

PERFORMANCE CHARACTERISTICS (continued)

10

2

10

2.0

0

1.8

0

AUDIO

1.8

AUDIO

±10

1.6

RELATIVE TO AUDIO OUTPUT (dB)

±10

1.6

RELATIVE TO AUDIO OUTPUT (dB)

±20

1.4

±20

1.4

AM REJECTION

AM REJECTION

±30

RSSI

1.3

±30

1.2

±40

1.0

RSSI (V)

±40

1.0

RSSI (V)

±50

THD+N

0.8

±50

THD+N

0.8

±60

±60

NOISE

0.6

NOISE

0.6

±70

0.4

±70

RSSI

0.4

±80

0.2

±80

0.2

±90

0

±90

±110

±100

±90

±80

±70

±60

±50

±40

±30

±20

±10

0.0

±110

±100

±90

±80

±70

±60

±50

±40

±30

±20

±10

0

0

RF INPUT LEVEL (dBm)

RF INPUT LEVEL (dBm)

Receiver RF Performance Ð T = 25°C,

Receiver RF Performance Ð T = ±40°C,

Audio Level = 129mVRMS

Audio Level = 118mVRMS

10

2

0

AUDIO

±10

0

1.8

±10

1.6

±20

RELATIVE TO AUDIO OUTPUT (dB)

±20

1.4

IF OUTPUT POWER (dBm)

±30

AM REJECTION

±40

±30

RSSI

1.2

±50

RSSI (V)

±40

1

±60

±50

THD+N

0.8

±70

±60

NOISE

0.6

±80

±70

0.4

±90

±100

±80

0.2

±110

±65

±60

±55

±50

±45

±40

±35

±30

±25

±20

±15

±10

±90

0

±110

±100

±90

±80

±70

±60

±50

±40

±30

±20

±10

0

RF INPUT POWER (dBm)

Mixer Third Order Intercept and Compression

Receiver RF Performance ± T = 85°C, Audio Level = 131mVRMS

85

2

±5

RF level = -45 dBm

±40°C

1.8

±7

1.6

25°C

(dB)

±9

1.4

85°C

±11

IIP3

1.2

5.5V

±13

MIXER

2.7V

1

±15

3.0V

0.8

±17

(V)RSSI

0.6

±19

±21

0.4

±23

0.2

±25

0

±110

±100

±90

±80

±70

±60

±50

±40

±30

±20

±10

0

±40

0

25

70

Temperature (°C)

RF INPUT LEVEL (dBm)

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

RSSI vs RF Input Level and Temperature

SR00494

Figure 4. Performance Characteristics

1997 Nov 07

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