Philips SA636D, SA636DK Datasheet

Philips Semiconductors

SA636

Low voltage high performance mixer FM
IF system with high-speed RSSI

Product specification
Replaces data of 1994 Jun 16

1997 Nov 07

RF COMMUNICATIONS PRODUCTS

IC17 Data Handbook

Philips Semiconductors Product specification

SA636

Low voltage high performance mixer FM IF
system with high-speed RSSI

2

1997 Nov 07 853-1757 18664

DESCRIPTION

The SA636 is a low-voltage high performance monolithic FM IF
system with high-speed RSSI incorporating a mixer/oscillator, two
limiting intermediate frequency amplifiers, quadrature detector,
logarithmic received signal strength indicator (RSSI), voltage
regulator, wideband data output and fast RSSI op amps. The
SA636 is available in 20-lead SSOP (shrink small outline package).

The SA636 was designed for high bandwidth portable
communication applications and will function down to 2.7V . The RF
section is similar to the famous SA605. The data output has a
minimum bandwidth of 600kHz. This is designed to demodulate
wideband data. The RSSI output is amplified. The RSSI output has
access to the feedback pin. This enables the designer to adjust the
level of the outputs or add filtering.

SA636 incorporates a power down mode which powers down the
device when Pin 8 is low. Power down logic levels are CMOS and
TTL compatible with high input impedance.

APPLICA TIONS

•DECT (Digital European Cordless Telephone)

•Digital cordless telephones

•Digital cellular telephones

•Portable high performance communications receivers

•Single conversion VHF/UHF receivers

•FSK and ASK data receivers

•Wireless LANs

FEATURES

•Wideband data output (600kHz min.)

•Fast RSSI rise and fall times

•Low power consumption: 6.5mA typ at 3V

•Mixer input to >500MHz

•Mixer conversion power gain of 11dB at 240MHz

•Mixer noise figure of 12dB at 240MHz

PIN CONFIGURATION

RF

IN

RF BYPASS

RSSI

OUT

MIXER OUT

IF AMP IN

IF AMP OUT

GND

LIMITER IN

LIMITER OUT

DK Package

POWER DOWN CONTROL

DATA OUT

QUADRATURE IN

IF AMP DECOUPLING

IF AMP DECOUPLING

LIMITER DECOUPLING

LIMITER DECOUPLING

V

CC

RSSI FEEDBACK

XTAL OSC (EMITTER)

XTAL OSC (BASE)

1
2
3
4
5
6
7
8
9

10

20
19
18
17
16
15
14
13
12
11

SR00491

Figure 1. Pin Configuration

•XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local

oscillator can be injected)

•92dB of IF Amp/Limiter gain

•25MHz limiter small signal bandwidth

•Temperature compensated logarithmic Received Signal Strength

Indicator (RSSI) with a dynamic range in excess of 90dB

•RSSI output internal op amp

•Internal op amps with rail-to-rail outputs

•Low external component count; suitable for crystal/ceramic/LC

filters

•Excellent sensitivity: 0.54µV into 50Ω matching network for 12dB

SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 240MHz and IF at 10.7MHz

•ESD hardened

•10.7MHz filter matching (330Ω)

•Power down mode (I

CC

= 200µA)

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Plastic Shrink Small Outline Package (Surface-mount) -40 to +85°C SA636DK

SOT266-1

Philips Semiconductors Product specification

SA636

Low voltage high performance mixer FM IF system
with high-speed RSSI

1997 Nov 07

3

BLOCK DIAGRAM

20 19 18 17 16 15 14 13 12 11

10987654321

FAST

IF
AMP

EB

OSCILLATOR

LIMITER

MIXER

QUAD

+–

+–

RSSI

GND

PWR
DWN

RSSI

AUDIO

V

CC

SR00492

Figure 2. Block Diagram

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC

Single supply voltage 0.3 to 7 V

V

IN

Voltage applied to any other pin –0.3 to (VCC+0.3) V

T

STG

Storage temperature range -65 to +150

°C

T

A

Operating ambient temperature range SA636 –40 to +85

°C

NOTE: θJA, Thermal impedance DK package 117°C/W

DC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; unless otherwise stated.

LIMITS

SYMBOL PARAMETER TEST CONDITIONS SA636 UNITS

MIN TYP MAX

V

CC

Power supply voltage range 2.7 3.0 5.5 V

I

CC

DC current drain Pin 8 = HIGH 5.5 6.5 7.5 mA

p

Pin 8 LOW –10 10

Input current

Pin 8 HIGH –10 10

µ

A

p

Pin 8 LOW 0 0.3V

CC

Input level

Pin 8 HIGH 0.7V

CC

V

CC

V

I

CC

Standby Pin 8 = LOW 0.2 0.5 mA

t

ON

Power up time RSSI valid (10% to 90%) 10 µs

t

OFF

Power down time RSSI invalid (90% to 10%) 5 µs

Philips Semiconductors Product specification

SA636

Low voltage high performance mixer FM IF system
with high-speed RSSI

1997 Nov 07

4

AC ELECTRICAL CHARACTERISTICS

TA = 25°C; VCC = +3V , unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level =

-45dBm; FM modulation = 1kHz with ±125kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test
circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The
limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.

LIMITS

SYMBOL PARAMETER TEST CONDITIONS SA636 UNITS

MIN TYP MAX

Mixer/Osc section (ext LO = 160mV

RMS

)

f

IN

Input signal frequency 500 MHz

f

OSC

External oscillator (buffer) 500 MHz
Noise figure at 240MHz 12 dB
Third-order input intercept point Matched f1=240.05; f2=240.35MHz -16 dBm
Conversion power gain Matched 14.5dBV step-up 8 11 14 dB
RF input resistance Single-ended input 700 Ω
RF input capacitance 3.5 pF
Mixer output resistance (Pin 20) 330 Ω

IF section

IF amp gain 330Ω load 38 dB
Limiter gain 330Ω load 54 dB
Input limiting -3dB Test at Pin 18 –105 dBm
AM rejection 80% AM 1kHz 50 dB
Data level R

LOAD

= 100kΩ 120 130 mV

RMS

3dB data bandwidth 600 700 kHz
SINAD sensitivity RF level = -111dBm 16 dB

THD Total harmonic distortion -43 -38 dB

S/N Signal-to-noise ratio No modulation for noise 60 dB

IF level = -118dBm 0.2 0.5 V

IF RSSI output with buffer IF level = -68dBm 0.3 0.6 1.0 V

IF level = -10dBm 0.9 1.3 1.8 V
IF RSSI output rise time IF frequency = 10.7MHz
(10kHz pulse, no 10.7MHz filter) RF level = -56dBm 1.2 µs
(no RSSI bypass capacitor) RF level = -28dBm 1.1 µs
IF RSSI output fall time IF frequency = 10.7MHz
(10kHz pulse, no 10.7MHz filter) RF level = -56dBm 2.0 µs
(no RSSI bypass capacitor) RF level = -28dBm 7.3 µs
RSSI range 90 dB
RSSI accuracy +1.5 dB
IF input impedance 330 Ω
IF output impedance 330 Ω
Limiter input impedance 330 Ω
Limiter output impedance 300 Ω
Limiter output level with no load 130 mV

RMS

RF/IF section (int LO)

System RSSI output RF level = -10dBm 1.4 V
System SINAD RF level = -106dBm 12 dB

Philips Semiconductors Product specification

SA636

Low voltage high performance mixer FM IF system
with high-speed RSSI

1997 Nov 07

5

PERFORMANCE CHARACTERISTICS

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

POWER DOWN SUPPLY CURRENT (mA)

–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

TEMPERATURE (°C)

100

Power Down Supply Current vs Temperature and Supply Voltage

VCC = 5V

V

CC

= 3V

V

CC

= 2.7V

9.0

8.5

8.0

7.5

7.0

6.5

6.0

5.5

5.0

SUPPLY CURRENT (mA)

–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

TEMPERATURE (°C)

Supply Current vs Temperature and Supply Voltage

Mixer Power Gain vs Temperature and Supply Voltage

20

0

–20

–40

–60

–80

–100

–120

AUDIO (dB)

–50–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

TEMPERATURE (°C)

12dB SINAD and Relative Audio, THD, Noise

and AM Rejection for VCC = 3V vs Temperature

RF = 240MHz, Level = –68dBm, Deviation = 125kHz

VCC = 3V

V

CC

= 2.7V

V

CC

= 5V

AUDIO

AM REJECTION

DISTORTION

NOISE

12dB SINAD

MIXER GAIN

(dB)

Temperature (°C)

–40 0 25 70 85

20
19
18
17
16
15
14
13
12
11
10

9
8
7
6
5

5.5V

2.7V

3.0V

RF level = -45 dBm

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

Temperature (°C)

–40 0 25 70 85

MIXER IIP3 (deB)

–5

–7

–9

–11

–13

–15

–17

–19

–21

–23

–25

5.5V

2.7V

3.0V

RF level = -45 dBm

Temperature (°C)

–40 0257085

300

AUDIO REFERENCE (mVrms)

5.5V

2.7V

3.0V

250

200

150

100

50

0

Audio Reference Level vs Temperature and Supply Voltage

SR00493

Figure 3. Performance Characteristics

Philips Semiconductors Product specification

SA636

Low voltage high performance mixer FM IF system
with high-speed RSSI

1997 Nov 07

6

PERFORMANCE CHARACTERISTICS (continued)

10

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

2

1.8

1.6

1.4

1.3

1.0

0.8

0.6

0.4

0.2

0

RSSI (V)

RELATIVE TO AUDIO OUTPUT (dB)

RF INPUT LEVEL (dBm)

Receiver RF Performance — T = 25°C,

Audio Level = 129mV

RMS

10

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

RSSI (V)

RELATIVE TO AUDIO OUTPUT (dB)

RF INPUT LEVEL (dBm)

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

Receiver RF Performance — T = –40°C,

Audio Level = 118mV

RMS

0
–10
–20
–30
–40
–50
–60
–70
–80
–90

–100
–110

–65

–60

–55

–50

–45

–40

–35

–30

–25

–20

–15

–10

RF INPUT POWER (dBm)

IF OUTPUT POWER (dBm)

Mixer Third Order Intercept and Compression

RF INPUT LEVEL (dBm)

RSSI (V)

RSSI vs RF Input Level and Temperature

–40°C

25°C

85°C

10

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–110

–100

–90

–80

–70

–60

–50

–40

–30

–20

–10

0

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

RSSI (V)

RELATIVE TO AUDIO OUTPUT (dB)

Receiver RF Performance – T = 85°C, Audio Level = 131mV

RMS

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

–110

–100

–90

–80

–70

–60

–50

–40

–30

–20

–10

0

–110

–100

–90

–80

–70

–60

–50

–40

–30

–20

–10

0

–110

–100

–90

–80

–70

–60

–50

–40

–30

–20

–10

0

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

Temperature (°C)

–40 0 25 70

85
–5
–7
–9

–11
–13
–15
–17
–19
–21
–23
–25

MIXER IIP3 (dB)

5.5V

2.7V

3.0V

RF level = -45 dBm

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

SR00494

Figure 4. Performance Characteristics