Philips sa636 DATASHEETS

RF COMMUNICATIONS PRODUCTS

SA636

Low voltage high performance mixer FM IF system with high-speed RSSI

Product specification Replaces data of 1994 Jun 16

IC17 Data Handbook

Philips Semiconductors

1997 Nov 07

Philips Semiconductors Product specification

Low voltage high performance mixer FM IF system with high-speed RSSI

DESCRIPTION

The SA636 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator, wideband data output and fast RSSI op amps. The SA636 is available in 20-lead SSOP (shrink small outline package).

The SA636 was designed for high bandwidth portable communication applications and will function down to 2.7V . The RF section is similar to the famous SA605. The data output has a minimum bandwidth of 600kHz. This is designed to demodulate wideband data. The RSSI output is amplified. The RSSI output has access to the feedback pin. This enables the designer to adjust the level of the outputs or add filtering.

SA636 incorporates a power down mode which powers down the device when Pin 8 is low. Power down logic levels are CMOS and TTL compatible with high input impedance.

APPLICATIONS

•DECT (Digital European Cordless Telephone)

•Digital cordless telephones

•Digital cellular telephones

•Portable high performance communications receivers

•Single conversion VHF/UHF receivers

•FSK and ASK data receivers

•Wireless LANs

FEATURES

•Wideband data output (600kHz min.)

•Fast RSSI rise and fall times

•Low power consumption: 6.5mA typ at 3V

•Mixer input to >500MHz

•Mixer conversion power gain of 11dB at 240MHz

•Mixer noise figure of 12dB at 240MHz

PIN CONFIGURATION

•XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local

•92dB of IF Amp/Limiter gain

•25MHz limiter small signal bandwidth

•Temperature compensated logarithmic Received Signal Strength

•RSSI output internal op amp

•Internal op amps with rail-to-rail outputs

•Low external component count; suitable for crystal/ceramic/LC

•Excellent sensitivity: 0.54µV into 50Ω matching network for 12dB

•ESD hardened

•10.7MHz filter matching (330Ω)

•Power down mode (I

SA636

DK Package

RF BYPASS

XTAL OSC (EMITTER)

XTAL OSC (BASE)

RSSI FEEDBACK

RSSI

POWER DOWN CONTROL

DATA OUT

QUADRATURE IN

oscillator can be injected)

Indicator (RSSI) with a dynamic range in excess of 90dB

filters

SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF at 240MHz and IF at 10.7MHz

2 3 4 5

6 7

OUT

8 9

Figure 1. Pin Configuration

= 200µA)

MIXER OUT

IF AMP DECOUPLING

IF AMP IN

IF AMP DECOUPLING

IF AMP OUT

GND

LIMITER IN

14 13

LIMITER DECOUPLING

LIMITER DECOUPLING LIMITER OUT

SR00491

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Plastic Shrink Small Outline Package (Surface-mount) -40 to +85°C SA636DK

1997 Nov 07 853-1757 18664

SOT266-1

Philips Semiconductors Product specification

Input current

Input level

Low voltage high performance mixer FM IF system with high-speed RSSI

BLOCK DIAGRAM

20 19 18 17 16 15 14 13 12 11

IF AMP

MIXER

OSCILLATOR

Figure 2. Block Diagram

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

STG

NOTE: θJA, Thermal impedance DK package 117°C/W

Single supply voltage 0.3 to 7 V Voltage applied to any other pin –0.3 to (VCC+0.3) V

Storage temperature range -65 to +150 Operating ambient temperature range SA636 –40 to +85

GND

RSSI

FAST RSSI

LIMITER

QUAD

+–

PWR DWN

+–

AUDIO

10987654321

SA636

SR00492

°C °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; unless otherwise stated.

LIMITS

SYMBOL PARAMETER TEST CONDITIONS SA636 UNITS

MIN TYP MAX

I t

OFF

Power supply voltage range 2.7 3.0 5.5 V

DC current drain Pin 8 = HIGH 5.5 6.5 7.5 mA

Standby Pin 8 = LOW 0.2 0.5 mA

Power up time RSSI valid (10% to 90%) 10 µs

Pin 8 LOW –10 10

Pin 8 HIGH –10 10

Pin 8 LOW 0 0.3V

Pin 8 HIGH 0.7V

Power down time RSSI invalid (90% to 10%) 5 µs

1997 Nov 07

Philips Semiconductors Product specification

Low voltage high performance mixer FM IF system with high-speed RSSI

AC ELECTRICAL CHARACTERISTICS

TA = 25°C; VCC = +3V, unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level =

-45dBm; FM modulation = 1kHz with ±125kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters.

LIMITS

SYMBOL PARAMETER TEST CONDITIONS SA636 UNITS

MIN TYP MAX

Mixer/Osc section (ext LO = 160mV

Input signal frequency 500 MHz

OSC

IF section

THD Total harmonic distortion -43 -38 dB

S/N Signal-to-noise ratio No modulation for noise 60 dB

RF/IF section (int LO)

External oscillator (buffer) 500 MHz Noise figure at 240MHz 12 dB Third-order input intercept point Matched f1=240.05; f2=240.35MHz -16 dBm Conversion power gain Matched 14.5dBV step-up 8 11 14 dB RF input resistance Single-ended input 700 Ω RF input capacitance 3.5 pF Mixer output resistance (Pin 20) 330 Ω

IF amp gain 330Ω load 38 dB Limiter gain 330Ω load 54 dB Input limiting -3dB Test at Pin 18 –105 dBm AM rejection 80% AM 1kHz 50 dB Data level R 3dB data bandwidth 600 700 kHz SINAD sensitivity RF level = -111dBm 16 dB

IF RSSI output with buffer IF level = -68dBm 0.3 0.6 1.0 V

IF RSSI output rise time IF frequency = 10.7MHz (10kHz pulse, no 10.7MHz filter) RF level = -56dBm 1.2 µs (no RSSI bypass capacitor) RF level = -28dBm 1.1 µs IF RSSI output fall time IF frequency = 10.7MHz (10kHz pulse, no 10.7MHz filter) RF level = -56dBm 2.0 µs (no RSSI bypass capacitor) RF level = -28dBm 7.3 µs RSSI range 90 dB RSSI accuracy +1.5 dB IF input impedance 330 Ω IF output impedance 330 Ω Limiter input impedance 330 Ω Limiter output impedance 300 Ω Limiter output level with no load 130 mV

System RSSI output RF level = -10dBm 1.4 V System SINAD RF level = -106dBm 12 dB

RMS

)

= 100kΩ 120 130 mV

LOAD

IF level = -118dBm 0.2 0.5 V

IF level = -10dBm 0.9 1.3 1.8 V

SA636

RMS

1997 Nov 07

Philips Semiconductors Product specification

Low voltage high performance mixer FM IF system with high-speed RSSI

PERFORMANCE CHARACTERISTICS

9.0

8.5

8.0

7.5

7.0

6.5

SUPPLY CURRENT (mA)

6.0

5.5

5.0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

TEMPERATURE (°C)

= 5V

VCC = 3V

= 2.7V

Supply Current vs Temperature and Supply Voltage

20 19 18 17 16 15 14

(dB)

13 12

MIXER GAIN

9 8 7 6 5

–40 0 25 70 85

Temperature (°C)

RF level = -45 dBm

5.5V

3.0V

2.7V

Mixer Power Gain vs Temperature and Supply Voltage

300

250

5.5V

200

3.0V

150

2.7V

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

POWER DOWN SUPPLY CURRENT (mA)

0.05

0.00 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

Power Down Supply Current vs Temperature and Supply Voltage

–5

–7

–9

–11

–13

–15

MIXER IIP3 (deB)

–17

–19

–21

–23

–25

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

–20

–40

AUDIO (dB)

–60

VCC = 5V

= 3V

= 2.7V

TEMPERATURE (°C)

RF level = -45 dBm

5.5V

3.0V

–40 0 25 70 85

AUDIO

AM REJECTION

Temperature (°C)

DISTORTION

2.7V

SA636

100

AUDIO REFERENCE (mVrms)

–40 0257085

Temperature (°C)

Audio Reference Level vs Temperature and Supply Voltage

Figure 3. Performance Characteristics

1997 Nov 07

–80

–100

–120

NOISE

12dB SINAD

–50–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

TEMPERATURE (°C)

12dB SINAD and Relative Audio, THD, Noise

and AM Rejection for VCC = 3V vs Temperature

RF = 240MHz, Level = –68dBm, Deviation = 125kHz

SR00493

Philips Semiconductors Product specification

Low voltage high performance mixer FM IF system with high-speed RSSI

PERFORMANCE CHARACTERISTICS (continued)

RSSI (V)

–10

–20

–30

–40

–50

–60

–70

RELATIVE TO AUDIO OUTPUT (dB)

–80

–90

–110

0 –10 –20 –30 –40 –50 –60 –70 –80

IF OUTPUT POWER (dBm)

–90

–100 –110

–65

1.8

1.6

1.4

1.2

0.8

RSSI (V)

0.6

0.4

0.2

–110

RELATIVE TO AUDIO OUTPUT (dB)

–10

–20

–30

–40

–50

–60

–70

–80

–90

–110

NOISE

–100

AUDIO

AM REJECTION

THD+N

–90

–80

RF INPUT LEVEL (dBm)

–70

–60

–50

–40

–30

–20

RSSI

–10

Receiver RF Performance — T = 25°C,

Audio Level = 129mV

–10

–20

–30

–40

–50

–60

RELATIVE TO AUDIO OUTPUT (dB)

–70

–80

–90

–110

Receiver RF Performance – T = 85°C, Audio Level = 131mV

85 –5 –7 –9

–11 –13 –15

MIXER IIP3 (dB) –17

–19 –21 –23 –25

AUDIO

AM REJECTION

THD+N

NOISE

–90

–80

–70

–100

–40 0 25 70

–60

5.5V

Temperature (°C)

RMS

–50

–40

RF level = -45 dBm

3.0V

–30

RSSI

–20

2.7V

–10

Mixer IIP3 at 240MHz vs Temperature and Supply Voltage

Figure 4. Performance Characteristics

1.8

1.6

1.4

1.3

1.0

0.8

0.6

0.4

0.2

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

RMS

SA636

AUDIO

AM REJECTION

THD+N

NOISE

RSSI

–90

–80

–70

–60

–50

–40

–30

–20

–25

–30

–10

–20

–40°C

25°C

85°C

–20

–100

RF INPUT LEVEL (dBm)

Receiver RF Performance — T = –40°C,

–60

Audio Level = 118mV

–55

–50

–45

RF INPUT POWER (dBm)

–40

–35

RMS

–30

Mixer Third Order Intercept and Compression

–90

–80

–70

–60

–50

–100

RF INPUT LEVEL (dBm)

–40

RSSI vs RF Input Level and Temperature

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

–15

–10

SR00494

RSSI (V)

–10

1997 Nov 07

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