Philips SA631DK Datasheet

INTEGRATED CIRCUITS

SA631

1GHz low voltage LNA and mixer

Product specification
IC17 Data Handbook

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1998 Jan 08

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

DESCRIPTION

The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA and mixer power down capability

•Designed in Philips state of the art BiCMOS QUBIC process

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

PIN CONFIGURATION

PD1
PD2

GND

LO OUT

GND
GND
GND
GND
GND
GND

10

Figure 1. Pin Configuration

1
2
3
4
5
6
7
8
9

20

MIXER OUT
MIXER OUT

19
18

GND

17

MIXER IN

16

GND
LNA IN

15

GND

14

LNA OUT

13
12

V

CC

GND

11

SR00124

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Shrink Small Outline Package (Surface-mount, SSOP)

BLOCK DIAGRAM

OUT

MIXER

OUT

GND

MIXER

20 19 18 17 16

PD1 PD2 GND

MIXER

IN

43215

LO GND GND

OUT

Figure 2. SA631 Block Diagram

GND

GND

–40 to +85°C

LNA

IN GND

GND

LNA

OUT

V

CC

15 14 13 12 11

LNA

761098

GND GND

GND

SA631DK SOT266-1

SR01588

1998 Jan 08 853–2045 18847

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA6311GHz low voltage LNA and mixer

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

T

P
T

CC

V

IN

P

D

JMAX

MAX

STG

Supply voltage
Voltage applied to any other pin –0.3 to (VCC + 0.3) V
Power dissipation, T

Maximum operating junction temperature 150 °C
Maximum power input/output +20 dBm
Storage temperature range –65 to +150 °C

NOTES:

1. Transients exceeding 8V on V

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

T

V

CC

amb

T

J

Supply voltage 2.7 to 5.5 V
Operating ambient temperature range –40 to +85 °C
Operating junction temperature –40 to +105 °C

1

= 25°C (still air)

20-Pin Plastic SSOP 980 mW

θ

JA

amb

pin may damage product.

CC

: 20-Pin SSOP = 110°C/W

2

–0.3 to +6 V

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , T

I

CC

V

T

V

IH

V

IL

I

IL

I

IH

= 25°C; unless otherwise stated.

amb

Supply current

PD logic threshold voltage 1.2 1.6 1.8 V
Logic 1 level 2.0 V
Logic 0 level –0.3 0.8 V
PD1 input current Enable = 0.4V 10 µA
PD2 input current Enable = 2.4V 10 µA

LIMITS

MIN TYP MAX

Full power-on 8.3 mA

LNA powered-down 5.2 mA

Full power-down 20 µA

CC

V

1998 Jan 08

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA6311GHz low voltage LNA and mixer

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , T

Low Noise Amplifier

f

RF

S

21

S

21

∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S

12

S

11

S

22

P

-1dB

IP3 Amplifier input third order intercept –7 dBm
NF Amplifier noise figure 1.7 dB
t

ON

t

OFF

Mixer

PG

C

S

11M

NF

M

P

-1dB

IP3

M

IP

2INT

P

RFM-IF

P

LO-IF

P

LO-RFM

P

LO-RF

Overall System

G

SYS

= 25°C; RFIN = 881MHz, f

amb

= 964MHz; unless otherwise stated.

VCO

LIMITS

–3

TYP

+3

RF input frequency range 800 1000 MHz
Amplifier gain 15 dB
Amplifier gain in power-down mode –28 dB

Amplifier reverse isolation @ 881 MHz –28 dB
Amplifier input match With ext. impedance matching –10 dB
Amplifier output match –10 dB
Amplifier input 1dB gain compression –20 dBm

Amplifier turn-on time (Enable Lo → Hi) 120 µs
Amplifier turn-off time (Enable Hi → Lo) 0.3 µs

Mixer power conversion gain: RP = RL = 1.2kΩ

fRF = 881MHz, fLO = 964MHz,

fIF = 83MHz

9.6 dB

Mixer input match Ext. impedance matching req. –10 dB
Mixer SSB noise figure 10 dB
Mixer input 1dB gain compression –14.5 dBm
Mixer input third order intercept 3.3 dBm
Mixer input second order intercept 38 dBm
Mixer RF feedthrough RFIN = –32dBm –45 dBm
LO feedthrough to IF LO = –0dBm –23 dBm
LO to mixer input feedthrough –32 dBm
LO to LNA input feedthrough –42 dBm

System gain LNA + Mixer 23.9 24.6 25.3 dB

1998 Jan 08

4

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

0 1 or open Mixer on, LNA power-down
1 or open 0 Standby (bias on)
1 or open 1 or open Full chip power-on (default)

L3

6.8nH

LNA

IN

C1
100pF

C8
10nF

LNA
OUT

C13
33pF

V

+

CC

–

3V

C9

0.1µF

V

CC

L1

MIXER

OUT

560nH

L4
560n

C2
10nF

C10

2.2pF

MIXER

IN

L6
12nH

C14

6.8pF

C11

10nF

IF

OUT

C3

6.8pF

C16
10pF

C15
10pF

20 19 18 17 16 15 14 13 12 11

MIXER GND GND GND GND

OUT

SA631

PD1 PD2 GND GND GND GND GND GND GND

12345678910

LO

VCO

OUT

OUT

C12
100pF

SR01589

Figure 3. SA631 Application Circuit

1998 Jan 08

5