Philips NE630D, NE630N, SA630D, SA630N Datasheet

Philips Semiconductors
SA630
Single pole double throw (SPDT) switch
Product Specification Replaces data of October 10, 1991
1997 Nov 07
RF COMMUNICATIONS PRODUCTS
INPUT/OUTPUT
OUTPUT/INPUT
OUTPUT/INPUT
IC17 Data Handbook
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
2
1997 Nov 07 853-1577 18666
DESCRIPTION
The SA630 is a wideband RF switch fabricated in BiCMOS technol­ogy and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is to switch signals in the frequency range DC ­1GHz from one 50 channel to another . The switch is activated by a CMOS/TTL compatible signal applied to the enable channel 1 pin (ENCH1).
The extremely low current consumption makes the SA630 ideal for portable applications. The excellent isolation and low loss makes this a suitable replacement for PIN diodes.
The SA630 is available in an 8-pin dual in-line plastic package and an 8-pin SO (surface mounted miniature) package.
FEA TURES
Wideband (DC - 1GHz)
Low through loss (1dB typical at 200MHz)
Unused input is terminated internally in 50
Excellent overload capability (1dB gain compression point +18dBm
at 300MHz)
Low DC power (170µA from 5V supply)
Fast switching (20ns typical)
Good isolation (off channel isolation 60dB at 100MHz)
PIN CONFIGURATION
V
DD
GND
INPUT
ENCH1
OUT
1
GND
1
2
3
45
6
7
8
AC GND
OUT
2
D and N Packages
SR00578
Figure 1. Pin Configuration
Low distortion (IP
3
intercept +33dBm)
Good 50 match (return loss 18dB at 400MHz)
Full ESD protection
Bidirectional operation
APPLICA TIONS
Digital transceiver front-end switch
Antenna switch
Filter selection
Video switch
FSK transmitter
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Dual In-Line Package (DIP) -40 to +85°C SA630N SOT97-1 8-Pin Plastic Small Outline (SO) package (Surface-mount) -40 to +85°C SA630D SOT96-1
BLOCK DIAGRAM
INPUT/OUTPUT
ENCH1
OUTPUT/INPUT
OUTPUT/INPUT
SR00579
Figure 2. Block Diagram
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
DD
Supply voltage 3.0 to 5.5V V
T
A
Operating ambient temperature range
SA Grade
-40 to +85 °C
T
J
Operating junction temperature range
SA Grade
-40 to +105 °C
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
1997 Nov 07
3
EQUIVALENT CIRCUIT
+5V
INPUT
ENCH1
1
2
3
4
5
6
7
8
AC BYPASS
CONTROL
LOGIC
V
DD
50
OUT
1
OUT
2
20k
50
20k
SR00580
Figure 3. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RA TING UNITS
V
DD
Supply voltage -0.5 to +5.5 V
P
D
Power dissipation, TA = 25oC (still air)
1
8-Pin Plastic DIP 8-Pin Plastic SO
1160
780
mW mW
T
JMAX
Maximum operating junction temperature 150 °C
P
MAX
Maximum power input/output +20 dBm
T
STG
Storage temperature range -65 to +150 °C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θ
JA
:
8-Pin DIP: θ
JA
= 108°C/W
8-Pin SO: θ
JA
= 158°C/W
DC ELECTRICAL CHARACTERISTICS
VDD = +5V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA630 UNITS
MIN TYP MAX
I
DD
Supply current 40 170 300 µA
V
T
TTL/CMOS logic threshold voltage
1
1.1 1.25 1.4 V
V
IH
Logic 1 level Enable channel 1 2.0 V
DD
V
V
IL
Logic 0 level Enable channel 2 -0.3 0.8 V
I
IL
ENCH1 input current ENCH1 = 0.4V -1 0 1 µA
I
IH
ENCH1 input current ENCH1 = 2.4V -1 0 1 µA
NOTE:
1. The ENCH1 input must be connected to a valid Logic Level for proper operation of the SA630.
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
1997 Nov 07
4
AC ELECTRICAL CHARACTERISTICS1 - D PACKAGE
VDD = +5V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA630 UNITS
MIN TYP MAX
S21, S12Insertion loss (ON channel)
DC - 100MHz
500MHz 900MHz
1
1.4 2
2.8
dB
S21, S12Isolation (OFF channel)
2
10MHz 100MHz 500MHz 900MHz
70
24
80 60 50 30
dB
S11, S22Return loss (ON channel)
DC - 400MHz
900MHz
20 12
dB
S11, S22Return loss (OFF channel)
DC - 400MHz
900MHz
17 13
dB
t
D
Switching speed (on-off delay) 50% TTL to 90/10% RF 20 ns
tr, t
f
Switching speeds (on-off rise/fall time) 90%/10% to 10%/90% RF 5 ns Switching transients 165 mV
P-P
P
-1dB
1dB gain compression DC - 1GHz +18 dBm
IP
3
Third-order intermodulation intercept 100MHz +33 dBm
IP
2
Second-order intermodulation intercept 100MHz +52 dBm
NF Noise figure (ZO = 50 )
100MHz 900MHz
1.0
2.0
dB
NOTE:
1. All measurements include the effects of the D package SA630 Evaluation Board (see Figure 4B). Measurement system impedance is 50.
2. The placement of the AC bypass capacitor is critical to achieve these specifications. See the applications section for more details.
AC ELECTRICAL CHARACTERISTICS1 - N PACKAGE
VDD = +5V, TA = 25°C; all other characteristics similar to the D-Package, unless otherwise stated.
LIMITS
SYMBOL PARAMETER TEST CONDITIONS SA630 UNITS
MIN TYP MAX
S21, S12Insertion loss (ON channel)
DC - 100MHz
500MHz 900MHz
1
1.4
2.5
dB
S21, S12Isolation (OFF channel)
10MHz 100MHz 500MHz 900MHz
58
68 50 37 15
dB
NF Noise figure (ZO = 50 )
100MHz 900MHz
1.0
2.5
dB
NOTE:
1. All measurements include the effects of the N package SA630 Evaluation Board (see Figure 4C). Measurement system impedance is 50.
APPLICATIONS
The typical applications schematic and printed circuit board layout of the SA630 evaluation board is shown in Figure 4. The layout of the board is simple, but a few cautions need to be observed. The input and output traces should be 50. The placement of the AC bypass capacitor is
extremely critical
if a symmetric isolation between the two channels is desired. The trace from Pin 7 should be drawn back towards the package and then be routed downwards. The capacitor
should be placed straight down as close to the device as practical. For better isolation between the two channels at higher frequencies, it is also advisable to run the two output/input traces at an angle. This also minimizes any inductive coupling between the two traces. The power supply bypass capacitor should be placed close to the device. Figure 10 shows the frequency response of the SA630. The loss matching between the two channels is excellent to 1.2GHz as shown in Figure 13.
Philips Semiconductors Product specification
SA630Single pole double throw (SPDT) switch
1997 Nov 07
5
1
2
3
45
6
7
8
D and N Packages
V
DD
GND
INPUT
ENCH
1
OUT
1
AC GND
GND
OUT
2
0.1µF
0.01µF
0.01µF
0.01µF
0.01µF
a. Evaluation Board Schematic
b. 630 D-Package Board Layout
c. 630 N-Package Board Layout
+5V
630N1 7/91
SR00581
Figure 4. Board and Package Graphics
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