Philips SA621DH, SA621DK Datasheet

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SA621

1GHz - Low voltage LNA, mixer and VCO

Product specification 1997 Nov 07

INTEGRATED CIRCUITS

IC17 Data handbook

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

2

1997 Nov 07 853-1849 018660

DESCRIPTION

The SA621 is a combined low-noise amplifier, mixer and VCO
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+4.5dBm at the input at 881MHz. The integrated VCO circuit with
external resonator produces a high quality LO signal that drives the
mixer and is buffered to an external PLL synthesizer IC. The
nominal current drawn from a single 3V supply is 13.3mA.
Additionally, the entire circuit can be powered down to further reduce
the supply current to less than 20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA, mixer and VCO power down capability

•Monotonic VCO frequency vs control voltage

PIN CONFIGURATION

SR01429

1
2
3
4
5
6
7
8
9

10

11

12

13

14

20
19
18
17
16
15

GND

LNA OUT
V

CC

LNA IN
GND

GND

MIXER IN

MIXER OUT

MIXER OUT

GND

GND

BYPASS

GND

TANK

GND

GND

LO OUT

PD2

PD1

GND

Figure 1. Pin Configuration

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)

-40 to +85°C

SA621DH SOT360-1

BLOCK DIAGRAM

SR01428

43215

20 19 18 17 16

761098

15 14 13 12 11

LO GND BYPASS

GND

V

CC

LNA

IN GND

MIXER

IN

MIXER

OUT

MIXER

OUT

PD1 PD2 GND

LNA

OUT

GND

OUT

GND

TANK

LNA

GND

GND GND

10pF 10pF

Figure 2. SA621 Block Diagram

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

3

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC

Supply voltage

1

-0.3 to +6 V

V

IN

Voltage applied to any other pin -0.3 to (VCC + 0.3) V

P

D

Power dissipation, TA = 25°C (still air)2

20-Pin Plastic SSOP

980 mW

T

JMAX

Maximum operating junction temperature 150 °C

P

MAX

Maximum power input/output +20 dBm

T

STG

Storage temperature range –65 to +150 °C

NOTE:

1. Transients exceeding 8V on V

CC

pin may damage product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

θ

JA

: 20-Pin SSOP = 110°C/W

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RA TING UNITS

V

CC

Supply voltage 2.7 to 5.5 V

T

A

Operating ambient temperature range -40 to +85 °C

T

J

Operating junction temperature -40 to +105 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

MIN TYP MAX

UNITS

Full power-on 13.3 mA

pp

LNA powered-down 10 mA

ICCSu ly current

Standby (VCO + bias) 5.7 mA

Full power-down 20 µA

V

T

PD logic threshold voltage 1.2 1.6 1.8 V

V

IH

Logic 1 level 2.0 V

CC

V

V

IL

Logic 0 level –0.3 0.8 V

I

IL

PD1 input current Enable = 0.4V 10 µA

I

IH

PD2 input current Enable = 2.4V 10 µA

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

4

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; RFIN = 881MHz, f

VCO

= 964MHz; unless otherwise stated.

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

–3

TYP

+3

UNITS

Low Noise Amplifier

f

RF

RF input frequency range 800 1000 MHz

S

21

Amplifier gain 15 dB

S

21

Amplifier gain in power-down mode -28 dB

∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S

12

Amplifier reverse isolation @ 881 MHz -28 dB

S

11

Amplifier input match With ext. impedance matching -10 dB

S

22

Amplifier output match -10 dB

P

-1dB

Amplifier input 1dB gain compression -20 dBm

IP3 Amplifier input third order intercept -7 dBm

NF Amplifier noise figure 1.7 dB

t

ON

Amplifier turn-on time (Enable Lo → Hi) 120 µs

t

OFF

Amplifier turn-off time (Enable Hi → Lo) 0.3 µs

Mixer

PG

C

Mixer power conversion gain: RP = RL = 1.2kΩ,

fRF = 881MHz, fLO = 964MHz,

f

IF

= 83MHz

8.7 dB

S

11M

Mixer input match Ext. impedance matching req. -10 dB

NF

M

Mixer SSB noise figure 12 dB

P

-1dB

Mixer input 1dB gain compression -10 dBm

IP3

M

Mixer input third order intercept 4.5 dBm

IP

2INT

Mixer input second order intercept 15 dBm

P

RFM-IF

Mixer RF feedthrough RFIN = -25dBm -41 dBm

P

LO-IF

LO feedthrough to IF LO = -10dBm -23 dBm

P

LO-RFM

LO to mixer input feedthrough -52 dBm

P

LO-RF

LO to LNA input feedthrough -38 dBm

Voltage Controlled Oscillator (VCO)

1

f

VCO

VCO frequency range 883 1083 MHz

P

VCO

VCO power out See Figure 3 -10 -8 dBm

p

2

Offset = 30kHz -109

VCO hase noise

2

Offset = 60kHz -115

dBc/Hz

Harmonic content -22 dBc
Residual modulation 45 dB
Pulling figure VSWR=2:1, all phases ±500 kHz
Pushing figure ±100 kHz/V

Overall System

G

SYS

System gain LNA + Mixer 23.0 23.7 24.4 dB

NOTES:

1. VCO performance dependent on external components.

2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.

Philips Semiconductors Product specification

SA6211GHz low voltage LNA, mixer and VCO

1997 Nov 07

5

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

0 1 or open VCO on, Mixer on, LNA power-down
1 or open 0 VCO on, LNA and Mixer power-down
1 or open 1 or open Full chip power-on (default)

SR01424

+

–

20 19 18 17 16 15 14 13 12 11

12345678910

PD1 PD2 GND GND GND TANK GND GND BYPASS

MIXER GND GND GND GND

V

CC

LO

OUT

IF

OUT

VCO

OUT

SA621

C3

6.8pF

L1
560nH

L4
560nH

C2

10nF

C14

6.8pF

C13
33pF

C8
10nF

3V

C12
100pF

C1
100pF

V

CC

OUT

MIXER

OUT

MIXER

IN

LNA

IN

LNA
OUT

L3

6.8nH

10nF

0.1µF

C9

C11

L6
12nH

C10

2.2pF

C6

10nF

R2

24Ω

MURATA 2mm

1/4 WAVE

FREQ=1025MHz

C5

.5pF

C10

220pF

L7

18.5nH
Hi–Q

D1

R1

5.1kΩ

VCO
CONTROL

D7

10nF

C4

2.2pF

Figure 3. SA621 Applications Circuit