Philips NE612AN, NE612AD, SA612AD, SA612AN Datasheet

RF COMMUNICATIONS PRODUCTS

SA612A

Double-balanced mixer and oscillator

Product specification
Replaces data of September 17, 1990

IC17 Data Handbook

Philips Semiconductors

1997 Nov 07

Philips Semiconductors Product specification

SA612ADouble-balanced mixer and oscillator

DESCRIPTION

The SA612A is a low-power VHF monolithic double-balanced mixer
with on-board oscillator and voltage regulator. It is intended for low
cost, low power communication systems with signal frequencies to
500MHz and local oscillator frequencies as high as 200MHz. The
mixer is a “Gilbert cell” multiplier configuration which provides gain
of 14dB or more at 45MHz.

The oscillator can be configured for a crystal, a tuned tank
operation, or as a buffer for an external L.O. Noise figure at 45MHz
is typically below 6dB and makes the device well suited for high
performance cordless phone/cellular radio. The low power
consumption makes the SA612A excellent for battery operated
equipment. Networking and other communications products can
benefit from very low radiated energy levels within systems. The
SA612A is available in an 8-lead dual in-line plastic package and an
8-lead SO (surface mounted miniature package).

FEA TURES

•Low current consumption

•Low cost

•Operation to 500MHz

•Low radiated energy

•Low external parts count; suitable for crystal/ceramic filter

•Excellent sensitivity, gain, and noise figure

PIN CONFIGURATION

D, N Packages

1

INPUT A

2

INPUT B

3

GND

OUTPUT A

4

Figure 1. Pin Configuration

APPLICATIONS

•Cordless telephone

•Portable radio

•VHF transceivers

•RF data links

•Sonabuoys

•Communications receivers

•Broadband LANs

•HF and VHF frequency conversion

•Cellular radio mixer/oscillator

8

V

CC

7

OSCILLATOR

6

OSCILLATOR

5

OUTPUT B

SR00098

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Dual In-Line Plastic (DIP) -40 to +85°C SA612AN SOT97-1
8-Pin Plastic Small Outline (SO) package (Surface-Mount) -40 to +85°C SA612AD SOT96-1

BLOCK DIAGRAM

8765

V

CC

VOLTAGE

REGULATOR

OSCILLATOR

GROUND

4321

SR00099

Figure 2. Block Diagram

1997 Nov 07 853-0391 18662

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITION

UNIT

SA612ADouble-balanced mixer and oscillator

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

CC

T

STG

T

A

AC/DC ELECTRICAL CHARACTERISTICS

TA=25°C, V

V

CC

f

IN

f

OSC

R

IN

C

IN

= 6V , Figure 3

CC

Maximum operating voltage 9 V
Storage temperature -65 to +150 °C
Operating ambient temperature range SA612A -40 to +85 °C

LIMITS

Min Typ Max

Power supply voltage range 4.5 8.0 V
DC current drain 2.4 3.0 mA
Input signal frequency 500 MHz
Oscillator frequency 200 MHz
Noise figured at 45MHz 5.0 dB
Third-order intercept point at 45MHz RFIN=-45dBm -13 dBm
Conversion gain at 45MHz 14 17 dB
RF input resistance 1.5 kΩ
RF input capacitance 3 pF
Mixer output resistance (Pin 4 or 5) 1.5 kΩ

DESCRIPTION OF OPERATION

The SA612A is a Gilbert cell, an oscillator/buffer , and a temperature
compensated bias network as shown in the equivalent circuit. The
Gilbert cell is a differential amplifier (Pins 1 and 2) which drives a
balanced switching cell. The differential input stage provides gain
and determines the noise figure and signal handling performance of
the system.

The SA612A is designed for optimum low power performance.
When used with the SA614A as a 45MHz cordless phone/cellular

radio 2nd IF and demodulator , the SA612A is capable of receiving

-119dBm signals with a 12dB S/N ratio. Third-order intercept is
typically -15dBm (that’s approximately +5dBm output intercept
because of the RF gain). The system designer must be cognizant of
this large signal limitation. When designing LANs or other closed
systems where transmission levels are high, and small-signal or
signal-to-noise issues not critical, the input to the SA612A should be
appropriately scaled.

1997 Nov 07

3

Philips Semiconductors Product specification

SA612ADouble-balanced mixer and oscillator

TEST CONFIGURA TION

0.5 to 1.3µH

22pF

34.545MHz THIRD OVERTONE CRYSTAL

10pF

150pF

6.8µF

V

CC

5.5µH

100nF

1nF

10nF

8765

47pF

INPUT

220pF

18k

6

7

25k

BUFFER

BIAS

44.2µH

4321

0.209 to

0.283µH

100nF

612A

Figure 3. Test Configuration

8

V

CC

1.5k

45

1.5k

1.5 to

OUTPUT

330pF

120pF

SR00101

BIAS

1997 Nov 07

1

1.5k
3

GND

1.5k

2

BIAS

SR00102

Figure 4. Equivalent Circuit

4