Philips SA611DK Datasheet

INTEGRATED CIRCUITS

SA611

1GHz low voltage LNA and mixer

Product specification
Supersedes data of 1997 Nov 07
IC17 Data Handbook

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1999 Mar 26

Philips Semiconductors Product specification

SA61 11GHz low voltage LNA and mixer

DESCRIPTION

The SA611 is a combined low-noise amplifier, and mixer designed
for high-performance low-power communication systems from
800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure
at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than ±0.2dB over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+7.0dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA and mixer power down capability

PIN CONFIGURATION

1

PD1

2

PD2

3

GND

4

LO OUT

5

GND
GND

6
7

GND

8

GND
GND

9

GND

10

Figure 1. Pin Configuration

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

20

MIXER OUT
MIXER OUT

19
18

GND

17

MIXER IN

16

GND
LNA IN

15

GND

14

LNA OUT

13
12

V

CC

GND

11

SR00124

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Shrink Small Outline Package (Surface-mount, SSOP)

BLOCK DIAGRAM

OUT

MIXER

OUT

GND

MIXER

20 19 18 17 16

10pF 10pF

PD1 PD2 GND

MIXER

IN

43215

LO GND GND

OUT

Figure 2. SA611 Block Diagram

GND

GND

-40 to +85°C

LNA

IN GND

GND

LNA
OUT

V

CC

15 14 13 12 11

LNA

761098

GND GND

GND

SA611DK SOT266–1

SR00125

1999 Mar 26 853-1886 21103

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

ICCSu ly current

LNA owered-down

5.2

mA

SA61 11GHz low voltage LNA and mixer

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

T

P
T

CC

V

IN

P

D

JMAX

MAX

STG

Supply voltage
Voltage applied to any other pin -0.3 to (VCC + 0.3) V
Power dissipation, TA = 25°C (still air)NO TAG

Maximum operating junction temperature 150 °C
Maximum power input/output +20 dBm
Storage temperature range –65 to +150 °C

NOTE:

1. Transients exceeding 8V on V

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

θ

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

JA

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC

T

A

T

J

Supply voltage 2.7 to 5.5 V
Operating ambient temperature range -40 to +85 °C
Operating junction temperature -40 to +105 °C

NO TAG

-0.3 to +6 V

20-Pin Plastic SSOP 980 mW

pin may damage product.

CC

: 20-Pin SSOP = 110°C/W

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; unless otherwise stated.

pp

V

PD logic threshold voltage 1.2 1.6 1.8 V

T

V

V

Logic 1 level 2.0 V

IH

Logic 0 level –0.3 0.8 V

IL

I

PD1 input current Enable = 0.4V 10 µA

IL

I

PD2 input current Enable = 2.4V 10 µA

IH

LIMITS

MIN TYP MAX

Full power-on 8.3 mA

p

Full power-down 20 µA

CC

V

1999 Mar 26

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA61 11GHz low voltage LNA and mixer

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , TA = 25°C; RFIN = 881MHz, f

Low Noise Amplifier

f
S
S

RF input frequency range 800 1000 MHz

RF

Amplifier gain 15 dB

21

Amplifier gain in power-down mode -28 dB

21

∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S
S
S

P

Amplifier reverse isolation @ 881 MHz -28 dB

12

Amplifier input match With ext. impedance matching -10 dB

11

Amplifier output match -10 dB

22

Amplifier input 1dB gain compression -20 dBm

-1dB

IP3 Amplifier input third order intercept -7 dBm

NF Amplifier noise figure 1.7 dB

t

t

OFF

Amplifier turn-on time (Enable Lo → Hi) 120 µs

ON

Amplifier turn-off time (Enable Hi → Lo) 0.3 µs

Mixer

PG

S

NF

P

IP3

IP

P

RFM-IF

P

LO-IF

P

LO-RFM

P

LO-RF

Mixer power conversion gain: RP = RL = 1.2kΩ,

C

Mixer input match Ext. impedance matching req. -10 dB

11M

Mixer SSB noise figure 12 dB

M

Mixer input 1dB gain compression -14.5 dBm

-1dB

Mixer input third order intercept 7.0 dBm

M

Mixer input second order intercept 15 dBm

2INT

Mixer RF feedthrough RFIN = -28dBm -45 dBm
LO feedthrough to IF LO = -0dBm -23 dBm
LO to mixer input feedthrough -36 dBm
LO to LNA input feedthrough -38 dBm

Overall System

G

System gain LNA + Mixer 23.0 23.7 24.4 dB

SYS

= 964MHz; unless otherwise stated.

VCO

fRF = 881MHz, fLO = 964MHz,

fIF = 83MHz

–3

LIMITS

TYP

+3

8.7 dB

1999 Mar 26

4

Philips Semiconductors Product specification

SA61 11GHz low voltage LNA and mixer

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

0 1 or open Mixer on, LNA power-down
1 or open 0 Standby (bias on)
1 or open 1 or open Full chip power-on (default)

C1
100pF

L6
12nH

L3

C3

6.8pF

IF

OUT

L1
560nH

L4
560nH

20 19 18 17 16 15 14 13 12 11

MIXER GND GND GND GND

MIXER

OUT

OUT

C2

10nF

C10

2.2pF

MIXER

IN

C14

6.8pF

C11

10nF

6.8nH

LNA

IN

C8
10nF

LNA
OUT

C13
33pF

V

+

CC

–

3V

C9

0.1µF

V

CC

SA611

PD1 PD2 GND GND GND GND GND GND GND

1234 5678910

LO

VCO

OUT

OUT

C12
100pF

Figure 3. SA611 Applications Circuit

SR00126

1999 Mar 26

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