Philips SA5223D Datasheet
INTEGRATED CIRCUITS
SA5223
Wide dynamic range AGC
transimpedance amplifier (150MHz)
Product specification 1995 Oct 24
IC19 Data Handbook
Philips
Semiconductors
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
DESCRIPTION
The SA5223 is a wide-band, low-noise transimpedance amplifier
with differential outputs, incorporating AGC and optimized for signal
recovery in wide-dynamic-range fiber optic receivers, such as
SONET. The part is also suited for many other RF and fiber optic
applications as a general purpose gain block.
The SA5223 is the first AGC amplifier to incorporate internal AGC
loop hold capacitor, therefore, no external components are required.
The internal AGC loop enables the SA5223 to effortlessly handle
bursty data over a range of nA to mA of signal current, positive
direction (sinking) only.
FEA TURES
•Extremely low noise:
1.17pA
Hz
•Single 5V supply
•Low supply current: 22mA
•Large bandwidth: 150MHz
•Differential outputs
•Internal hold capacitor
•Low input/output impedances
•High power-supply-rejection ratio: 55dB
•Tight transresistance control
•High input overload: 4mA
•2000V HBM ESD protection
PIN DESCRIPTION
D Package
GND
GND
GND
1
3
2
1
3
IN
4
4
V
8
OUT
7
6
OUT
5
GND
SD00369
CC
2
APPLICATIONS
•OC3 SONET preamp (see AN1431 for detailed analysis
•Current-to-voltage converters
•Wide-band gain block
•Medical and scientific instrumentation
•Sensor preamplifiers
•Single-ended to differential conversion
•Low noise RF amplifiers
•RF signal processing
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline
For unpackaged die please contact factory.
-40 to +85°C
SA5223D SOT96-1
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
CC
T
A
T
J
T
STG
P
D
I
INMAX
NOTE:
1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ
6.2mW/
°C above 25°C.
Power supply voltage 6 V
Ambient temperature range -40 to +85
Junction temperature range -55 to +150
Storage temperature range -65 to +150
Power dissipation TA = 25oC (still air)
Maximum input current 5 mA
1
0.78 W
= 158oC/W. Derate
JA
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
T
A
T
J
Power supply voltage 4.5 to 5.5 V
Ambient temperature range: SA grade -40 to +85
Junction temperature range: SA grade -40 to +105
°C
°C
°C
°C
°C
1995 Oct 24 853-1816 15939
2
Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
idth (ref
t)
C
S
1F
T
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
DC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C, and VCC = +5V, unless otherwise specified.
SA5223
Min Typ Max
V
V
V
I
I
OMAX
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
AC ELECTRICAL CHARACTERISTICS
Typical data and Min and Max limits apply at TA = 25°C and VCC = +5V, unless otherwise specified.
R
R
R
R
f
3dB
R
C
C
∆R/∆V Transresistance power supply sensitivity V
∆R/∆T
PSRR Power supply rejection ratio (change in VOS) DC Tested, ∆VCC = ±0.5V –55 dB
PSRR Power supply rejection ratio
V
OLMAX
dR
I
INMAX
tr, t
NOTES:
1. Does not include Miller-multiplied capacitance of input device.
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line.
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit
Error Rate (BER) for 100,000 cycles at 100MHz).
Input bias voltage 1.3 1.55 1.8 V
IN
Output bias voltage 2.9 3.2 3.5 V
±
O
Output offset voltage (V
OS
Supply current 15 22 29 mA
CC
PIN6
- V
) -200 80 +200 mV
PIN7
Output sink/source current 1.5 2 mA
SA5223
Min Typ Max
Transresistance (differential output)
T
Transresistance
T
(single-ended output)
Output resistance
O
(differential output)
Output resistance
O
(single-ended output)
DC tested, RL = ∞, IIN = 0-1µA
DC tested, RL = ∞, IIN = 0-1µA
DC tested 140 Ω
DC tested 70 Ω
90 125 160 kΩ
45 62.5 80 kΩ
Bandwidth (-3dB) Test Circuit 1 110 150 MHz
Input resistance DC tested 250
IN
Input capacitance
IN
Input capacitance including Miller multiplied
INT
capacitance
Transresistance ambient temperature sensitivity
RMS noise current spectral density (referred
I
IN
to input)
2
Integrated RMS noise current over the bandw
=
p
= 0.
I
T
1
erred to inpu
0.7
4.0
= V
CC1
∆TA = T
= 5 ±0.5V 3 %/V
CC2
A MAX
- T
A MIN
0.09
Test Circuit 2, f = 10MHz 1.17
Test circuit 2,
∆f = 50MHz
7
∆f = 100MHz 12
∆f = 150MHz 16
∆f = 50MHz 8
CS = 0.4pF ∆f = 100MHz 13
∆f = 150MHz 18
3
f = 1.0MHz, Test Circuit 3 –20 dB
Maximum differential output AC voltage Ii = 0–2mA peak AC 800 mV
T
AGC loop time constant parameter
dt
Maximum input amplitude for output duty
cycle of 50 ±5%
Output rise and fall times 10 – 90% 2.2 ns
f
t
Group delay f = 10MHz 2.2 ns
D
4
10µA to 20µA steps 1 dB/ms
Test circuit 4 +2 mA
Ω
pF
pF
%/oC
pA Hz
nA
1995 Oct 24
3
Philips Semiconductors Product specification
SA5223Wide dynamic range AGC transimpedance amplifier(150MHz)
TEST CIRCUITS
SINGLE-ENDED
R
+ 12.4 @ S21@ RIN,RIN+ 1k ) R
TSE
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1 PORT2
Z
= 50Ω
O
0.1uF
IN DUT
R=1k
GND
50
1
V
CC
500
OUT
500
OUT
GND
2
.1uF
.1uF
INSS
[ 1250
= 50Ω
Z
O
50
SPECTRUM ANALYZER
V
CC
OUT
IN DUT
OUT
GND
C
S
1
GND
.1µF
.1µF
2
50Ω
1.0µF
NE5209
1.0µF
50Ω
50% DUTY CYCLE
Test Circuit 1: Bandwidth
50Ω
0.1uF
NC
GND
PULSE GEN
OFFSET
0.1uF
50Ω
SD00370
1
V
CC
OUT
IN DUT
OUT
GND
5V
.1uF
.1uF
100Ω
2
BAL.
BIAS TEE
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT1 PORT2
NHO300HB
Test Circuit 3: PSRR
5V
.1µF
500Ω
OUT
DUT
GND
IN
OUT
1
GND
2
500Ω
.1µF
1kΩ
Test Circuit 4: Duty Cycle Distortion
Test Circuit 2: Noise
CAL
50Ω
UNBAL.
A
ZO = 50Ω
OSCILLOSCOPE
B
Z
= 50Ω
O
Meaurement done using
differential wave forms
SD00373
SD00371
TRANSFORMER
CONVERSION
LOSS = 9dB
SD00372
1995 Oct 24
4
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