Philips SA5222D Datasheet

INTEGRATED CIRCUITS

SA5222

Low-power FDDI transimpedance amp

Product specification 1995 Apr 26
IC19 Data Handbook

Philips
Semiconductors

Philips Semiconductors Product specification



SA5222Low-power FDDI transimpedance amplifier

DESCRIPTION

The SA5222 is a low-power, wide-band, low noise transimpedance
amplifier with differential outputs, optimized for signal recovery in
FDDI fiber optic receivers. The part is also suited for many other RF
and fiber optic applications as a general purpose gain block.

FEA TURES



•Extremely low noise:

2.0pA

Hz

•Single 5V supply

•Low supply current: 9mA

•Large bandwidth: 165MHz

•Differential outputs

•Low output offset

•Low input/output impedances

•High power-supply-rejection ratio: 55dB

•Tight transresistance control

•High input overload: 115µA

•ESD protected

PIN DESCRIPTION

D Package

V

1

CC1

2

GND

1

3

IN

4

GND

1

Figure 1. Pin Configuration

APPLICATIONS

•FDDI preamp

•Current-to-voltage converters

•Wide-band gain block

•Medical and scientific instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

•Low noise RF amplifiers

•RF signal processing

V

8

OUT

7

6

OUT

5

GND

SD00360

CC2

2

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Small Outline (SO) package

-40 to +85°C

SA5222D SOT96-1

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC1,2

T

A

T

J

T

STG

P

D

I

INMAX

NOTE:

1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θ

6.2mW/

°C above 25°C.

Power supply voltage 6 V
Ambient temperature range -40 to +85

Junction temperature range -55 to +150
Storage temperature range -65 to +150

Power dissipation TA = 25oC (still air)
Maximum input current 5 mA

1

0.78 W

= 158oC/W. Derate

JA

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC1,2

T

A

T

J

Power supply voltage 4.5 to 5.5 V
Ambient temperature range: SA grade -40 to +85
Junction temperature range: SA grade -40 to +105

°C
°C
°C

°C
°C

1995 Apr 26 853-1582 15170

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

T

SA5222Low-power FDDI transimpedance amplifier

DC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at TA = 25°C, and V

V
V
V

I

I

OMAX

I

INMAX

V

OMAX

Input bias voltage 1.3 1.55 1.8 V

IN

Output bias voltage 2.9 3.2 3.5 V

±

O

Output offset voltage 0 ±100 mV

OS

Supply current 6 9 12 mA

CC

Output sink/source current 1.5 2 mA

I

Input current (2% linearity) Test circuit 5, Procedure 2 ±60 ±90

IN

Maximum input current overload threshold Test circuit 5, Procedure 4 ±80 ±115
Maximum differential output voltage swing R

AC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at TA = 25°C and V

R

Transresistance (differential output)

T

R

R

R

f

R

C

∆R/∆V Transresistance power supply sensitivity V
∆R/∆T

PSRR Power supply rejection ratio DC Tested, ∆VCC = ±0.5V –55 dB
PSRR Power supply rejection ratio

I

INMAX

tr, tfRise and fall times 10 – 90% 2.2 ns

NOTES:

1. Bandwidth is tested into 50Ω load. Bandwidth into 1kΩ load is approximately 165MHz.

2. Does not include Miller-multiplied capacitance of input device.

3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in VCC line.

4. Monitored in production via linearity and over load tests.

Output resistance

O

(differential output)
Transresistance

T

(single-ended output)
Output resistance

O

(single-ended output)
Bandwidth (-3dB)

3dB

Input resistance 150

IN

Input capacitance

IN

1

2

Transresistance ambient temperature sensi­tivity

RMS noise current spectral density (referred

I

IN

to input)
Integrated RMS noise current over the band-

width (referred to input)
CS = 0pF ∆f = 100MHz 25

I

T

CS = 1pF ∆f = 50MHz 17

3

Maximum input amplitude for output duty
cycle of 50 ±5%

t

Group delay f = 10MHz 2.2 ns

D

4

= V

CC1

= +5V, unless otherwise specified.

CC2

SA5222

Min Typ Max

= ∞, Test Circuit 5, Procedure 3 3.6 V

L

= V

CC1

=+5V , unless otherwise specified.

CC2

SA5222

Min Typ Max

DC tested, RL = ∞, Test Circuit 5,

Procedure 1

13.3 16.6 19.9 kΩ

DC tested 30 60 90 Ω

DC tested, RL = ∞

6.65 8.3 9.95 kΩ

DC tested 15 30 45 Ω

Test Circuit 1 110 140 MHz

1

= V

CC1

∆TA = T

= 5 ±0.5V 1.0 %/V

CC2

A MAX

- T

A MIN

0.07

Test Circuit 2, f = 10MHz 2.0

Test circuit 2,

∆f = 50MHz

15

∆f = 150MHz 36

∆f = 100MHz 35
∆f = 150MHz 55

f = 1.0MHz, Test Circuit 3 –34 dB

Test circuit 4 ±120 µA

µA
µA

P-P

Ω

pF

%/oC



pA Hz

nA

1995 Apr 26

3

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

TEST CIRCUITS

SINGLE-ENDED

V

OUT

R + 2 @ S21@ R

V

IN

1 + S22

-20

1 - S22

NETWORK ANALYZER

S-PARAMETER TEST SET

0.1uF

R=1k

GND

1

V

IN DUT

Z

O

RO = Z

= 50Ω

O

PORT1 PORT2

50

Test Circuit 1: Bandwidth

Figure 2. Test Circuit1

TEST CIRCUITS (continued)

CC

OUT

OUT

RT+

RO = 2Z

20

20

GND

2

DIFFERENTIAL

V

OUT

R + 4 @ S21@ RRT+

V

IN

1 + S22

O

1 - S22

Z

.1uF

.1uF

O

50

= 50Ω

-40

SD00361

5V

C

S

BIAS TEE

GND

1

SPECTRUM ANALYZER

V

CC

OUT

IN DUT

OUT

GND

.1µF

20

.1µF

20

2

Test Circuit 2: Noise

Figure 3. Test Circuit2

50Ω

10µF

NE5209

10µF

50Ω

SD00362

0.1uF

NC

GND

50Ω

1

V

CC

OUT

IN DUT

OUT

PORT1 PORT2

.1uF

20Ω

.1uF

20Ω

GND

100Ω

2

BAL.

Test Circuit 3: PSRR

Figure 4. Test Circuit4

NETWORK ANALYZER

S-PARAMETER TEST SET

NHO300HB

50Ω

UNBAL.

CAL

TRANSFORMER

CONVERSION

LOSS = 9dB

SD00363

1995 Apr 26

4