Philips sa5222 DATASHEETS

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1

1995 Apr 26 853-1582 15170

DESCRIPTION

The NE/SA5222 is a low-power, wide-band, low noise
transimpedance amplifier with differential outputs, optimized for
signal recovery in FDDI fiber optic receivers. The part is also suited
for many other RF and fiber optic applications as a general purpose
gain block.

FEATURES

•Extremely low noise:

z



D Package

IN

GND

2

OUT

V

CC2

1

2

3

4

8

7

6

5

OUT

GND

1

V

CC1

GND

1

SD00360

Figure 1. Pin Configuration

APPLICATIONS

•FDDI preamp

•Current-to-voltage converters

•Wide-band gain block

•Medical and scientific instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

•Low noise RF amplifiers

•RF signal processing

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Small Outline (SO) package

-40 to +85°C

SA5222D SOT96-1

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC1,2

Power supply voltage 6 V

T

A

Ambient temperature range -40 to +85

°C

T

J

Junction temperature range -55 to +150

°C

T

STG

Storage temperature range -65 to +150

°C

P

D

Power dissipation TA = 25oC (still air)

1

0.78 W

I

INMAX

Maximum input current 5 mA

NOTE:

1. Maximum power dissipation is determined by the operating ambient temperature and the thermal resistance θJA = 158oC/W. Derate

6.2mW/

°C above 25°C.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC1,2

Power supply voltage 4.5 to 5.5 V

T

A

Ambient temperature range: SA grade -40 to +85

°C

T

J

Junction temperature range: SA grade -40 to +105

°C

2.0pAH

•Single 5V supply

•Low supply current: 9mA

•Large bandwidth: 165MHz

•Differential outputs

•Low output offset

•Low input/output impedances

•High power-supply-rejection ratio: 55dB

•Tight transresistance control

•High input overload: 115µA

•ESD protected

PIN DESCRIPTION

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

2

DC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at TA = 25°C, and V

CC1

= V

CC2

= +5V, unless otherwise specified.

SA5222

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

V

IN

Input bias voltage 1.3 1.55 1.8 V

V

O

±

Output bias voltage 2.9 3.2 3.5 V

V

OS

Output offset voltage 0 ±100 mV

I

CC

Supply current 6 9 12 mA

I

OMAX

Output sink/source current 1.5 2 mA

I

IN

Input current (2% linearity) Test circuit 5, Procedure 2 ±60 ±90

µA

I

INMAX

Maximum input current overload threshold Test circuit 5, Procedure 4 ±80 ±115

µA

V

OMAX

Maximum differential output voltage swing R

L

= ∞, Test Circuit 5, Procedure 3 3.6 V

P-P

AC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at TA = 25°C and V

CC1

= V

CC2

=+5V, unless otherwise specified.

SA5222

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max

UNIT

R

T

Transresistance (differential output)

DC tested, RL = ∞, Test Circuit 5,

Procedure 1

13.3 16.6 19.9 kΩ

R

O

Output resistance
(differential output)

DC tested 30 60 90 Ω

R

T

Transresistance
(single-ended output)

DC tested, RL = ∞

6.65 8.3 9.95 kΩ

R

O

Output resistance
(single-ended output)

DC tested 15 30 45 Ω

f

3dB

Bandwidth (-3dB)

1

Test Circuit 1 110 140 MHz

R

IN

Input resistance 150

Ω

C

IN

Input capacitance

2

1

pF

∆R/∆V Transresistance power supply sensitivity V

CC1

= V

CC2

= 5 ±0.5V 1.0 %/V

∆R/∆T

Transresistance ambient temperature sensi­tivity

∆TA = T

A MAX

- T

A MIN

0.07

%/oC

I

IN

RMS noise current spectral density (referred
to input)

Test Circuit 2, f = 10MHz 2.0

p

Integrated RMS noise current over the band­width (referred to input)

Test circuit 2,

∆f = 50MHz

15

CS = 0pF ∆f = 100MHz 25

∆f = 150MHz 36

I

T

CS = 1pF ∆f = 50MHz 17

nA

∆f = 100MHz 35
∆f = 150MHz 55

PSRR Power supply rejection ratio DC Tested, ∆VCC = ±0.5V –55 dB
PSRR Power supply rejection ratio

3

f = 1.0MHz, Test Circuit 3 –34 dB

I

INMAX

Maximum input amplitude for output duty
cycle of 50 ±5%

4

Test circuit 4 ±120 µA

tr, tfRise and fall times 10 – 90% 2.2 ns

t

D

Group delay f = 10MHz 2.2 ns

NOTES:

1. Bandwidth is tested into 50Ω load. Bandwidth into 1kΩ load is approximately 165MHz.

2. Does not include Miller-multiplied capacitance of input device.

3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V

CC

line.

4. Monitored in production via linearity and over load tests.

I

T



A Hz

nA

Philips Semiconductors Product specification

SA5222Low-power FDDI transimpedance amplifier

1995 Apr 26

3

TEST CIRCUITS

Test Circuit 1: Bandwidth

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT1 PORT2

V

CC

20

.1uF

20

.1uF

50

Z

O

= 50Ω

OUT

OUT

IN DUT

0.1uF

R=1k

50

GND

1

SINGLE-ENDED

DIFFERENTIAL

RO = Z

O

1 + S22
1 - S22

-20

RO = 2Z

O

1 + S22
1 - S22

-40

GND

2

RT+

V

OUT

V

IN

R + 4 @ S21@ RRT+

V

OUT

V

IN

R + 2 @ S21@ R

Z

O

= 50Ω

SD00361

Figure 2. Test Circuit1

Test Circuit 2: Noise

SPECTRUM ANALYZER

V

CC

20

20

OUT

OUT

IN DUT

GND

2

GND

1

NE5209

50Ω

.1µF

.1µF

10µF

10µF

C

S

50Ω

SD00362

Figure 3. Test Circuit2

TEST CIRCUITS (continued)

Test Circuit 3: PSRR

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT1 PORT2

V

CC

20Ω

.1uF

20Ω

.1uF

OUT

OUT

IN DUT

GND

2

GND

1

50Ω

CAL

UNBAL.

0.1uF

NC

50Ω

BIAS TEE

5V

NHO300HB

TRANSFORMER

CONVERSION

LOSS = 9dB

100Ω
BAL.

SD00363

Figure 4. Test Circuit4