Philips SA5212AD, SA5212AFE, SA5212AN Datasheet

INTEGRATED CIRCUITS

SA5212A

Transimpedance amplifier (140MHz)

Product specification
Replaces datasheet NE/SA/SE5212A of 1995 Apr 26
IC19 Data Handbook




1998 Oct 07

Philips Semiconductors Product specification

P

SA5212ATransimpedance amplifier (140MHz)

DESCRIPTION

The SA5212A is a 14kΩ transimpedance, wideband, low noise
differential output amplifier, particularly suitable for signal recovery in
fiber optic receivers and in any other applications where very low
signal levels obtained from high-impedance sources need to be
amplified.

FEA TURES

•Extremely low noise: 2.5pA/√Hz

•Single 5V supply

•Large bandwidth: 140MHz

PIN CONFIGURATION

N, FE, D Packages

1

I

IN

2

V

CC

3

GND

1

45

GND

1

Figure 1. Pin Configuration

8

7

6

SD00336

GND

OUT (–)

GND

2

OUT (+)

2

•Differential outputs

•Low input/output impedances

•14kΩ differential transresistance

•ESD hardened

•Wideband gain block

•Medical and scientific instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

APPLICA TIONS

•Fiber-optic receivers, analog and digital

•Low noise RF amplifiers

•RF signal processing

•Current-to-voltage converters

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

8-Pin Plastic Small Outline (SO) Package -40°C to +85°C SA5212AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +85°C SA5212AN SOT97-1
8-Pin Ceramic Dual In-Line Package (DIP) -40°C to +85°C SA5212AFE 0580A

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER SA5212A UNIT

V

CC

D MAX

I

IN MAX

T

A

T

J

T

STG

NOTES:

1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:

2. The use of a pull-up resistor to V

8-Pin Plastic DIP: 110°C/W
8-Pin Plastic SO: 160°C/W
8-Pin Cerdip: 165°C/W

Power Supply 6 V
Power dissipation, TA=25°C (still air)

8-Pin Plastic DIP 1100 mW
8-Pin Plastic SO 750 mW

8-Pin Cerdip 750 mw
Maximum input current
Operating ambient temperature range -40 to 85 °C
Operating junction -55 to 150 °C
Storage temperature range -65 to 150 °C

CC

2

, for the PIN diode, is recommended

1

5 mA

1998 Oct 07 853-1266 20142

2

Philips Semiconductors Product specification

SA5212ATransimpedance amplifier (140MHz)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNIT

V

CC

T

A

T

J

DC ELECTRICAL CHARACTERISTICS

Minimum and Maximum limits apply over operating temperature range at VCC=5V, unless otherwise specified. Typical data applies at VCC=5V
and T

=25°C1.

A

SYMBOL

V

IN

V

±

O

V

OS

I

CC

I

OMAX

I

IN

I

N MAX

NOTES:

1. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.

Supply voltage range 4.5 to 5.5 V
Ambient temperature ranges -40 to +85 °C
Junction temperature ranges -40 to +105 °C

PARAMETER TEST CONDITIONS Min Typ Max UNIT

Input bias voltage 0.55 0.8 1.05 V
Output bias voltage 2.5 3.3 3.8 V
Output offset voltage 120 mV
Supply current 20 26 33 mA
Output sink/source current 3 4 mA
Maximum input current (2% linearity) Test Circuit 6, Procedure 2 ±40 ±80 µA
Maximum input current overload threshold T est Circuit 6, Procedure 4 ±60 ±120 µA

1998 Oct 07

3

Philips Semiconductors Product specification

g

T

SA5212ATransimpedance amplifier (140MHz)

AC ELECTRICAL CHARACTERISTICS

Minimum and Maximum limits apply over operating temperature range at VCC=5V, unless otherwise specified. Typical data applies at VCC=5V
and T

=25°C5.

A

SYMBOL

R
R

R
R

f

R
C

T

O
T
O

3dB

IN
IN

Transresistance (differential output)
Output resistance (differential output) DC tested 14 30 46 Ω

Transresistance (single-ended output) DC tested, R
Output resistance (single-ended output) DC tested 7 15 23 Ω

Bandwidth (-3dB) T

Input resistance 70 110 150 Ω
Input capacitance 10 18 pF

∆R/∆V Transresistance power supply sensitivity V
∆R/∆T

I

N

Transresistance ambient
temperature sensitivity

RMS noise current spectral density
(referred to input)

Integrated RMS noise current over the band­width (referred to input) C

I

T

C

= 1pF ∆f = 100MHz 32

S

PSRR Power supply rejection ratio

PSRR

V

O MAX

V

IN MAX

t

R

Power supply rejection ratio
(ECL configuration)

Maximum differential output voltage swing
Maximum input amplitude for output duty

cycle of 50 ±5%
Rise time for 50mV output signal

NOTES:

1. Package parasitic capacitance amounts to about 0.2pF.

2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V

3. Guaranteed by linearity and over load tests.
defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.

4. t

R

5. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.

PARAMETER TEST CONDITIONS Min Typ Max UNIT

DC tested, R

Test Circuit 6, Procedure 1

= ∞

L

= ∞ 4.5 7 9.5 kΩ

L

9.0 14 19 kΩ

Test Circuit 1

D package,

= 25°C 100 140 MHz

A

N, FE packages,

T

= 25°C 100 120

A

= 5 ±0.5V 9.6 %/V

CC

D package

= T

∆T

A

A MAX-TA MIN

Test Circuit 2

f = 10MHz T

T

= 25°C Test Circuit 2

A

= 25°C

A

∆f = 50MHz

1

= 0

S

∆f = 100MHz 27
∆f = 200MHz 40

0.05 %/°C

2.5 pA/√Hz

20

nA

∆f = 50MHz 22

∆f = 200MHz 52

Any package

2

DC tested

∆V

= 0.1V

CC

20 33 dB

Equivalent AC

Test Circuit 3

2

Any package

f = 0.1MHz

1

23 dB

Test Circuit 4

R

= ∞

Test Circuit 6, Procedure 3

L

3

4

Test Circuit 5 325 mV
Test Circuit 5 2.0 ns

1.7 3.2 V

CC

P-P

P-P

line.

1998 Oct 07

4

Philips Semiconductors Product specification

SA5212ATransimpedance amplifier (140MHz)

TEST CIRCUITS

SINGLE-ENDED DIFFERENTIAL

Rt

V

OUT

2  S21  RR

V

IN

V

OUT



t

V

IN

4  S21  R

ZO = 50Ω

RO Z

PORT 1

0.1µF

50

1  S22





O

 33 RO 2Z

1  S22

NETWORK ANALYZER

S-PARAMETER TEST SET

R = 1k

IN DUT

GND

1

Test Circuit 1

1  S22





1  S22

RL = 50Ω

 66

SPECTRUM ANALYZER

V

CC

NC

IN DUT

GND

1

Test Circuit 2

OUT

OUT

GND

AV = 60DB

1µF

33

1µF

33

R

= 50

L

2

SD00337

O

PORT 2

V

CC

1µF

33

OUT

1µF

33

OUT

GND

2

Figure 2. Test Circuits 1 and 2

5V + ∆V

10µF

10µF

0.1µF

10µF

NC

16

GND

V

CC

IN

DUT

1

CURRENT PROBE

1mV/mA

1µF

GND

33

33

1µF

2

OUT

OUT

Test Circuit 3

Figure 3. Test Circuit 3

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1 PORT 2

CAL

50

100
BAL.

TRANSFORMER

NH0300HB

UNBAL.

TEST

SD00338

1998 Oct 07

5

Philips Semiconductors Product specification

SA5212ATransimpedance amplifier (140MHz)

TEST CIRCUITS (Continued)

NETWORK ANALYZER

–5.2V + ∆V

10µF

10µF

0.1µF

0.1µF

NC

PULSE GEN.

GND

V

CC

16

1

OUT

IN

OUT

CURRENT PROBE

1mV/mA

GND

2

1µF

33

33

1µF

Test Circuit 4

Figure 4. Test Circuit 4

5V

S-PARAMETER TEST SET

PORT 1 PORT 2

CAL

50

100
BAL.

TRANSFORMER

NH0300HB

UNBAL.

TEST

SD00339

1998 Oct 07

50

0.1µF

GND

1

OUT

DUT

OUT

GND

IN

1k

Test Circuit 5

Figure 5. Test Circuit 5

1µF

33

33

1µF

2

A

Z

= 50Ω

O

OSCILLOSCOPE

B

ZO = 50Ω

Measurement done using

differential wave forms

SD00545

6