SA5212AD
SA5212A
Transimpedance amplifier (140MHz)
Product specification
Replaces datasheet NE/SA/SE5212A of 1995 Apr 26
IC19 Data Handbook
1998 Oct 07
INTEGRATED CIRCUITS
Philips Semiconductors Product specification
SA5212ATransimpedance amplifier (140MHz)
2
1998 Oct 07 853-1266 20142
DESCRIPTION
The SA5212A is a 14kΩ transimpedance, wideband, low noise
differential output amplifier, particularly suitable for signal recovery in
fiber optic receivers and in any other applications where very low
signal levels obtained from high-impedance sources need to be
amplified.
FEA TURES
•Extremely low noise: 2.5pA/√Hz
•Single 5V supply
•Large bandwidth: 140MHz
•Differential outputs
•Low input/output impedances
•14kΩ differential transresistance
•ESD hardened
APPLICA TIONS
•Fiber-optic receivers, analog and digital
•Current-to-voltage converters
PIN CONFIGURATION
GND
2
I
IN
V
CC
GND
1
GND
1
GND
2
OUT (–)
OUT (+)
N, FE, D Packages
1
2
3
45
6
7
8
SD00336
Figure 1. Pin Configuration
•Wideband gain block
•Medical and scientific instrumentation
•Sensor preamplifiers
•Single-ended to differential conversion
•Low noise RF amplifiers
•RF signal processing
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package -40°C to +85°C SA5212AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +85°C SA5212AN SOT97-1
8-Pin Ceramic Dual In-Line Package (DIP) -40°C to +85°C SA5212AFE 0580A
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER SA5212A UNIT
V
CC
Power Supply 6 V
Power dissipation, T
A
=25°C (still air)
1
8-Pin Plastic DIP 1100 mW
P
D
MAX
8-Pin Plastic SO 750 mW
8-Pin Cerdip 750 mw
I
IN
MAX
Maximum input current
2
5 mA
T
A
Operating ambient temperature range -40 to 85 °C
T
J
Operating junction -55 to 150 °C
T
STG
Storage temperature range -65 to 150 °C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
8-Pin Plastic DIP: 110°C/W
8-Pin Plastic SO: 160°C/W
8-Pin Cerdip: 165°C/W
2. The use of a pull-up resistor to V
CC
, for the PIN diode, is recommended
Philips Semiconductors Product specification
SA5212ATransimpedance amplifier (140MHz)
1998 Oct 07
3
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNIT
V
CC
Supply voltage range 4.5 to 5.5 V
T
A
Ambient temperature ranges -40 to +85 °C
T
J
Junction temperature ranges -40 to +105 °C
DC ELECTRICAL CHARACTERISTICS
Minimum and Maximum limits apply over operating temperature range at V
CC
=5V, unless otherwise specified. Typical data applies at V
CC
=5V
and T
A
=25°C
1
.
SYMBOL
PARAMETER TEST CONDITIONS Min Typ Max UNIT
V
IN
Input bias voltage 0.55 0.8 1.05 V
V
O
±
Output bias voltage 2.5 3.3 3.8 V
V
OS
Output offset voltage 120 mV
I
CC
Supply current 20 26 33 mA
I
OMAX
Output sink/source current 3 4 mA
I
IN
Maximum input current (2% linearity) Test Circuit 6, Procedure 2 ±40 ±80 µA
I
N
MAX
Maximum input current overload threshold T est Circuit 6, Procedure 4 ±60 ±120 µA
NOTES:
1. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
Philips Semiconductors Product specification
SA5212ATransimpedance amplifier (140MHz)
1998 Oct 07
4
AC ELECTRICAL CHARACTERISTICS
Minimum and Maximum limits apply over operating temperature range at V
CC
=5V, unless otherwise specified. Typical data applies at V
CC
=5V
and T
A
=25°C
5
.
SYMBOL
PARAMETER TEST CONDITIONS Min Typ Max UNIT
R
T
Transresistance (differential output)
DC tested, R
L
= ∞
Test Circuit 6, Procedure 1
9.0 14 19 kΩ
R
O
Output resistance (differential output) DC tested 14 30 46 Ω
R
T
Transresistance (single-ended output) DC tested, R
L
= ∞ 4.5 7 9.5 kΩ
R
O
Output resistance (single-ended output) DC tested 7 15 23 Ω
Test Circuit 1
D package,
f
3dB
Bandwidth (-3dB) T
A
= 25°C 100 140 MHz
N, FE packages,
T
A
= 25°C 100 120
R
IN
Input resistance 70 110 150 Ω
C
IN
Input capacitance 10 18 pF
∆R/∆V Transresistance power supply sensitivity V
CC
= 5 ±0.5V 9.6 %/V
∆R/∆T
Transresistance ambient
temperature sensitivity
D package
∆T
A
= T
A
MAX
-T
A
MIN
0.05 %/°C
I
N
RMS noise current spectral density
(referred to input)
Test Circuit 2
f = 10MHz T
A
= 25°C
2.5 pA/√Hz
Integrated RMS noise current over the band-
T
A
= 25°C Test Circuit 2
∆f = 50MHz
20
g
width (referred to input) C
S
= 0
1
∆f = 100MHz 27
I
T
∆f = 200MHz 40
nA
T
∆f = 50MHz 22
C
S
= 1pF ∆f = 100MHz 32
∆f = 200MHz 52
PSRR Power supply rejection ratio
2
Any package
DC tested
∆V
CC
= 0.1V
Equivalent AC
Test Circuit 3
20 33 dB
PSRR
Power supply rejection ratio
2
(ECL configuration)
Any package
f = 0.1MHz
1
Test Circuit 4
23 dB
V
O
MAX
Maximum differential output voltage swing
R
L
= ∞
Test Circuit 6, Procedure 3
1.7 3.2 V
P-P
V
IN
MAX
Maximum input amplitude for output duty
cycle of 50 ±5%
3
Test Circuit 5 325 mV
P-P
t
R
Rise time for 50mV output signal
4
Test Circuit 5 2.0 ns
NOTES:
1. Package parasitic capacitance amounts to about 0.2pF.
2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V
CC
line.
3. Guaranteed by linearity and over load tests.
4. t
R
defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.
5. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
Philips Semiconductors Product specification
SA5212ATransimpedance amplifier (140MHz)
1998 Oct 07
5
TEST CIRCUITS
Test Circuit 1
R
t
V
OUT
V
IN
2 S21 RR
t
V
OUT
V
IN
4 S21 R
SINGLE-ENDED DIFFERENTIAL
R
O
Z
O
1 S22
1 S22
33 R
O
2Z
O
1 S22
1 S22
66
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT 1
PORT 2
33
IN DUT
OUT
OUT
50
33
GND
1
GND
2
V
CC
Z
O
= 50Ω
1µF
R
L
= 50Ω
R = 1k
1µF
0.1µF
Test Circuit 2
SPECTRUM ANALYZER
33
IN DUT
OUT
OUT
33
GND
1
GND
2
V
CC
1µF
R
L
= 50
1µF
A
V
= 60DB
NC
SD00337
Figure 2. Test Circuits 1 and 2
Test Circuit 3
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT 1 PORT 2
V
CC
GND
1
GND
2
NC
CURRENT PROBE
1mV/mA
CAL
TEST
TRANSFORMER
NH0300HB
100
33
33
16
OUT
OUT
BAL.
10µF
0.1µF
10µF
1µF
1µF
50
UNBAL.
5V + ∆V
10µF
DUT
IN
SD00338
Figure 3. Test Circuit 3
Philips Semiconductors Product specification
SA5212ATransimpedance amplifier (140MHz)
1998 Oct 07
6
TEST CIRCUITS (Continued)
Test Circuit 4
NETWORK ANALYZER
S-PARAMETER TEST SET
PORT 1 PORT 2
CURRENT PROBE
1mV/mA
CAL
TEST
TRANSFORMER
NH0300HB
100
33
33
16
OUT
OUT
BAL.
50
UNBAL.
V
CC
GND
1
GND
2
NC
0.1µF
1µF
1µF
0.1µF
10µF
–5.2V + ∆V
10µF
IN
SD00339
Figure 4. Test Circuit 4
Test Circuit 5
OSCILLOSCOPE
33
33
1k
OUT
OUT
GND
2
GND
1
5V
IN
1µF
1µF
PULSE GEN.
Measurement done using
differential wave forms
0.1µF
50
Z
O
= 50Ω
A
B
Z
O
= 50Ω
DUT
SD00545
Figure 5. Test Circuit 5
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