Philips SA5211D Datasheet

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INTEGRATED CIRCUITS

SA5211

Transimpedance amplifier (180MHz)

Product specification

1998 Oct 07

Replaces datasheet NE/SA5211 of 1995 Apr 26

IC19 Data Handbook

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Philips Semiconductors	Product specification


Transimpedance amplifier (180MHz)	SA5211

DESCRIPTION

The SA5211 is a 28kΩ transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block.

FEATURES

•Extremely low noise: 1.8pA Hz

•Single 5V supply

•Large bandwidth: 180MHz

•Differential outputs

•Low input/output impedances

•High power supply rejection ratio

•28kΩ differential transresistance

APPLICATIONS

•Fiber optic receivers, analog and digital

•Current-to-voltage converters

•Wide-band gain block

PIN CONFIGURATION

		D Package
GND2	1	14	OUT (±)
GND2	2	13	GND2
NC	3	12	OUT (+)
I	4	11	GND1
IN
NC	5	10	GND1
VCC1	6	9	GND1
VCC1			GND1
VCC2	7	8	GND1
VCC2			GND1
		TOP VIEW
		SD00318

Figure 1. Pin Configuration

•Medical and scientific Instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

•Low noise RF amplifiers

•RF signal processing

ORDERING INFORMATION

DESCRIPTION	TEMPERATURE RANGE	ORDER CODE	DWG #

14-Pin Plastic Small Outline (SO) Package	-40 to +85°C	SA5211D	SOT108-1

ABSOLUTE MAXIMUM RATINGS

SYMBOL	PARAMETER	RATING	UNIT

VCC	Power supply	6	V
TA	Operating ambient temperature range	-40 to +85	°C
TJ	Operating junction temperature range	-55 to +150	°C
TSTG	Storage temperature range	-65 to +150	°C
P	Power dissipation, T =25°C (still-air)1	1.0	W
D MAX	A
I	Maximum input current2	5	mA
IN MAX
θJA	Thermal resistance	125	°C/W

NOTES:

1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance: θJA=125°C/W

2. The use of a pull-up resistor to VCC, for the PIN diode is recommended.

1998 Oct 07

853-1799 20142

Philips Semiconductors	Product specification

Transimpedance amplifier (180MHz)	SA5211

RECOMMENDED OPERATING CONDITIONS

SYMBOL	PARAMETER	RATING	UNIT

VCC	Supply voltage	4.5 to 5.5	V
TA	Ambient temperature range	-40 to +85	°C
TJ	Junction temperature range	-40 to +105	°C

DC ELECTRICAL CHARACTERISTICS

Min and Max limits apply over operating temperature range at VCC=5V, unless otherwise specified. Typical data apply at VCC=5V and TA=25°C.

SYMBOL	PARAMETER	TEST CONDITIONS	Min	Typ	Max	UNIT

VIN	Input bias voltage		0.55	0.8	1.00	V
VO±	Output bias voltage		2.7	3.4	3.7	V
VOS	Output offset voltage			0	130	mV
ICC	Supply current		20	26	31	mA
I	Output sink/source current1		3	4		mA
OMAX
IIN	Input current	Test Circuit 8,	±20	±40		μA
IIN	(2% linearity)	Procedure 2	±20	±40		μA
IIN MAX	Maximum input current	Test Circuit 8,	±30	±60		μA
IIN MAX	overload threshold	Procedure 4	±30	±60		μA

NOTES:

1. Test condition: output quiescent voltage variation is less than 100mV for 3mA load current.

1998 Oct 07

Philips Semiconductors	Product specification

Transimpedance amplifier (180MHz)	SA5211

AC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at VCC=5V and TA=25°C

SYMBOL		PARAMETER	TEST CONDITIONS	Min	Typ	Max	UNIT

RT		Transresistance (differential output)	DC tested RL = ∞	21	28	36	kΩ
RT		Transresistance (differential output)	Test Circuit 8, Procedure 1	21	28	36	kΩ
RO		Output resistance (differential output)	DC tested		30		Ω
RT		Transresistance (single-ended output)	DC tested	10.5	14	18.0	kΩ
RT		Transresistance (single-ended output)	RL = ∞	10.5	14	18.0	kΩ
			RL = ∞
RO		Output resistance (single-ended output)	DC tested		15		Ω
f3dB		Bandwidth (-3dB)	TA = 25°C		180		MHz
f3dB		Bandwidth (-3dB)	Test circuit 1		180		MHz
RIN		Input resistance			200		Ω
CIN		Input capacitance			4		pF
R/	V	Transresistance power supply sensitivity	VCC = 5±0.5V		3.7		%/V
R/	T	Transresistance ambient temperature sensitivity	TA = TA MAX-TA MIN		0.025		%/°C
		RMS noise current spectral density (referred to	Test Circuit 2
IN		RMS noise current spectral density (referred to	f = 10MHz		1.8		pA/√ Hz
IN		input)	f = 10MHz		1.8		pA/√ Hz
			TA = 25°C
IT		Integrated RMS noise current over the bandwidth	TA = 25°C
IT		(referred to input)	Test Circuit 2
		(referred to input)	Test Circuit 2

			f = 50MHz		13
		CS=01	f = 100MHz		20		nA
			f = 200MHz		35

			f = 50MHz		13
		CS=1pF	f = 100MHz		21		nA
			f = 200MHz		41

PSRR		Power supply rejection ratio2	DC tested, VCC = 0.1V	23	32		dB
PSRR		(VCC1 = VCC2)	Equivalent AC	23	32		dB
		(VCC1 = VCC2)	Test Circuit 3
			Test Circuit 3

PSRR		Power supply rejection ratio2 (VCC1)	DC tested, VCC = 0.1V	23	32		dB
PSRR		Power supply rejection ratio2 (VCC1)	Equivalent AC	23	32		dB
			Test Circuit 4

		Power supply rejection ratio2 (VCC2)	DC tested, VCC = 0.1V
PSRR		Power supply rejection ratio2 (VCC2)	Equivalent AC	45	65		dB
			Test Circuit 5

PSRR		Power supply rejection ratio (ECL configuration)2	f = 0.1MHz		23		dB
PSRR		Power supply rejection ratio (ECL configuration)2	Test Circuit 6		23		dB
			Test Circuit 6

VOMAX		Maximum differential output voltage swing	RL = ∞	1.7	3.2		VP-P
VOMAX		Maximum differential output voltage swing	Test Circuit 8, Procedure 3	1.7	3.2		VP-P
VIN MAX		Maximum input amplitude for output duty cycle of	Test Circuit 7	160			mVP-P
VIN MAX		50±5%3	Test Circuit 7	160			mVP-P
t		Rise time for 50mV output signal4	Test Circuit 7		0.8	1.8	ns
R

NOTES:

1.Package parasitic capacitance amounts to about 0.2pF

2.PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC lines.

3.Guaranteed by linearity and overload tests.

4.tR defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.

1998 Oct 07

Philips Semiconductors	Product specification

Transimpedance amplifier (180MHz)	SA5211

TEST CIRCUITS

SINGLE-ENDED

DIFFERENTIAL

NETWORK ANALYZER

VOUT

[

R + 2 @ S21 @ R

R + 4 @ S21 @ R

1 ) S22

1 ) S22 * 66

S-PARAMETER TEST SET

[ ZO

* 33

+ 2ZO

PORT 1

PORT 2

1 * S22

VCC1

VCC2

0.1μF

ZO = 50

0.1μF

OUT

ZO = 50

R = 1k

IN DUT

OUT

0.1μF

RL = 50

GND1

GND2

Test Circuit 1

SPECTRUM ANALYZER

		5V
	VCC1	VCC2	AV = 60DB
		33	0.1μF	ZO = 50
		33		ZO = 50
		OUT
NC	IN	DUT	0.1μF
		33
		OUT
				RL = 50
	GND1	GND2

Test Circuit 2	SD00319
	SD00319

Figure 2. Test Circuits 1 and 2

1998 Oct 07

Philips Semiconductors	Product specification

Transimpedance amplifier (180MHz)	SA5211

TEST CIRCUITS (Continued)

						NETWORK ANALYZER
5V						S-PARAMETER TEST SET
10μF	0.1μF					S-PARAMETER TEST SET
10μF	0.1μF
					PORT 1			PORT 2
			CURRENT PROBE
10μF			1mV/mA
10μF
	0.1μF	16						CAL
		16

		VCC1	VCC2	33	0.1μF
				33
			OUT				50	TEST
	IN				100	TRANSFORMER		TEST
	IN				100	TRANSFORMER	UNBAL.
				33	BAL.	NH0300HB
			OUT	33
			OUT
					0.1μF
		GND1	GND2

Test Circuit 3

					NETWORK ANALYZER
5V					S-PARAMETER TEST SET
10μF	0.1μF				S-PARAMETER TEST SET
10μF	0.1μF
				PORT 1			PORT 2
		CURRENT PROBE
10μF		1mV/mA
10μF
	0.1μF	16					CAL
		16

5V	VCC2	VCC1
10μF	VCC2	VCC1	33	0.1μF
	0.1μF	OUT		100		50	TEST
	IN			100	TRANSFORMER	UNBAL.
			33	BAL.	NH0300HB
		OUT	33
		OUT
	GND1	GND2		0.1μF
	GND1	GND2

Test Circuit 4

SD00320

Figure 3. Test Circuits 3 and 4

1998 Oct 07

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