Philips SA5211D Datasheet

INTEGRATED CIRCUITS

SA5211

Transimpedance amplifier (180MHz)

Product specification
Replaces datasheet NE/SA5211 of 1995 Apr 26
IC19 Data Handbook

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1998 Oct 07

Philips Semiconductors Product specification

SYMBOL

PARAMETER

RATING

UNIT

SA521 1Transimpedance amplifier (180MHz)

DESCRIPTION

The SA521 1 is a 28kΩ transimpedance, wide-band, low noise
amplifier with differential outputs, particularly suitable for signal
recovery in fiber optic receivers. The part is ideally suited for many
other RF applications as a general purpose gain block.

FEA TURES

•Extremely low noise:

1.8pA  Hz



•Single 5V supply

•Large bandwidth: 180MHz

•Differential outputs

•Low input/output impedances

•High power supply rejection ratio

•28kΩ differential transresistance

APPLICATIONS

•Fiber optic receivers, analog and digital

•Current-to-voltage converters

•Wide-band gain block

PIN CONFIGURATION

D Package

1

GND

2

2

GND

2

3

NC

4

I

IN

5

NC

6

V

CC1

78

V

CC2

TOP VIEW

Figure 1. Pin Configuration

•Medical and scientific Instrumentation

•Sensor preamplifiers

•Single-ended to differential conversion

•Low noise RF amplifiers

•RF signal processing

14

OUT (–)

13

GND

12

OUT (+)

11

GND

10

GND

9

GND

GND

SD00318

2

1

1

1
1

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

14-Pin Plastic Small Outline (SO) Package -40 to +85°C SA5211D SOT108-1

ABSOLUTE MAXIMUM RATINGS

V

CC

T

A

T

J

T

STG

P

D MAX

I

IN MAX

θ

JA

NOTES:

1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
=125°C/W

θ

2. The use of a pull-up resistor to V

JA

Power supply 6 V
Operating ambient temperature range -40 to +85 °C
Operating junction temperature range -55 to +150 °C
Storage temperature range -65 to +150 °C
Power dissipation, TA=25°C (still-air)
Maximum input current

2

1

1.0 W
5 mA

Thermal resistance 125 °C/W

, for the PIN diode is recommended.

CC

1998 Oct 07 853-1799 20142

2

Philips Semiconductors Product specification

SA521 1Transimpedance amplifier (180MHz)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNIT

V

CC

T

A

T

J

DC ELECTRICAL CHARACTERISTICS

Min and Max limits apply over operating temperature range at VCC=5V, unless otherwise specified. Typical data apply at VCC=5V and TA=25°C.

SYMBOL

V

IN

V

±

O

V

OS

I

CC

I

OMAX

I

IN

I

IN MAX

NOTES:

1. Test condition: output quiescent voltage variation is less than 100mV for 3mA load current.

Input bias voltage 0.55 0.8 1.00 V
Output bias voltage 2.7 3.4 3.7 V
Output offset voltage 0 130 mV
Supply current 20 26 31 mA
Output sink/source current
Input current

(2% linearity)
Maximum input current

overload threshold

Supply voltage 4.5 to 5.5 V
Ambient temperature range -40 to +85 °C
Junction temperature range -40 to +105 °C

PARAMETER TEST CONDITIONS Min Typ Max UNIT

1

Test Circuit 8,

Procedure 2

Test Circuit 8,

Procedure 4

3 4 mA

±20 ±40 µA

±30 ±60 µA

1998 Oct 07

3

Philips Semiconductors Product specification

1

SA521 1Transimpedance amplifier (180MHz)

AC ELECTRICAL CHARACTERISTICS

Typical data and Min and Max limits apply at VCC=5V and TA=25°C

SYMBOL

R
R
R
R
f
R

C

T

O

T

O

3dB

IN
IN

Transresistance (differential output)
Output resistance (differential output) DC tested 30 Ω
Transresistance (single-ended output)
Output resistance (single-ended output) DC tested 15 Ω
Bandwidth (-3dB)
Input resistance 200 Ω

Input capacitance 4 pF

∆R/∆V Transresistance power supply sensitivity V
∆R/∆T Transresistance ambient temperature sensitivity ∆T

I

N

I

T

RMS noise current spectral density (referred to
input)

Integrated RMS noise current over the bandwidth
(referred to input)

CS=0

CS=1pF ∆f = 100MHz 21 nA

PSRR

Power supply rejection ratio
(V

= V

CC1

PSRR Power supply rejection ratio2 (V

PSRR Power supply rejection ratio2 (V

PSRR Power supply rejection ratio (ECL configuration)

V

OMAX

V

IN MAX

t

R

Maximum differential output voltage swing
Maximum input amplitude for output duty cycle of

3

50±5%
Rise time for 50mV output signal

NOTES:

1. Package parasitic capacitance amounts to about 0.2pF

2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V

3.

Guaranteed by linearity and overload tests.

4. t

defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.

R

PARAMETER TEST CONDITIONS Min Typ Max UNIT

DC tested R

Test Circuit 8, Procedure 1

DC tested

T

A

Test circuit 1

CC

= T

A

= ∞

L

= ∞

R

L

= 25°C

= 5±0.5V 3.7 %/V

A MAX-TA MIN

21 28 36 kΩ

10.5 14 18.0 kΩ

180 MHz

0.025 %/°C

Test Circuit 2

f = 10MHz
T

= 25°C

A

T

= 25°C

A

1.8 pA/√Hz

Test Circuit 2

∆f = 50MHz 13
∆f = 100MHz 20 nA
∆f = 200MHz 35

∆f = 50MHz 13

∆f = 200MHz 41

CC

CC

= 0.1V

= 0.1V

23 32 dB

23 32 dB

CC2

2

)

DC tested, ∆V

Equivalent AC

Test Circuit 3

DC tested, ∆V

CC1

)

Equivalent AC

Test Circuit 4

CC2

DC tested, ∆V

)

Equivalent AC

CC

= 0.1V

45 65 dB

Test Circuit 5

2

f = 0.1MHz

Test Circuit 6

R

= ∞

L

Test Circuit 8, Procedure 3

23 dB

1.7 3.2 V

Test Circuit 7 160 mV

4

Test Circuit 7 0.8 1.8 ns

CC

P-P

P-P

lines.

1998 Oct 07

4

Philips Semiconductors Product specification

SA521 1Transimpedance amplifier (180MHz)

TEST CIRCUITS

ZO = 50

NETWORK ANALYZER

S-PARAMETER TEST SET

PORT 1

0.1µF

R = 1k

50

5V

V

CC1VCC2

IN DUT

GND

1

OUT

OUT

GND

PORT 2

0.1µF

33

0.1µF

33

2

Test Circuit 1

SPECTRUM ANALYZER

V

CC1VCC2

NC

IN DUT

GND

SINGLE-ENDED DIFFERENTIAL

V

OUT

RT[

RO[ Z

= 50

Z

O

= 50

R

L

5V

33

OUT

33

OUT

GND

1

2

R + 2 @ S21 @ RRT+

V

IN

1 ) S22

Ť

Ť

O

AV = 60DB

0.1µF

0.1µF

* 33 RO+ 2Z

1 * S22

= 50

Z

O

R

= 50

L

V

OUT

V

IN

1 ) S22

Ť

O

1 * S22

R + 4 @ S21 @ R

Ť

* 66

1998 Oct 07

Test Circuit 2

Figure 2. Test Circuits 1 and 2

5

SD00319

Philips Semiconductors Product specification

SA521 1Transimpedance amplifier (180MHz)

TEST CIRCUITS (Continued)

NETWORK ANALYZER

5V

10µF

10µF

0.1µF

0.1µF

IN

V

GND

CC1

16

1

CURRENT PROBE

1mV/mA

V

CC2

GND

33

33

2

OUT

OUT

0.1µF

0.1µF

PORT 1 PORT 2

100
BAL.

S-PARAMETER TEST SET

TRANSFORMER

NH0300HB

50
UNBAL.

CAL

TEST

Test Circuit 3

NETWORK ANALYZER

1998 Oct 07

5V

5V

10µF

10µF

10µF

0.1µF

0.1µF

0.1µF

IN

V

CC2

GND

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

16

V

CC1

OUT

OUT

1

GND

0.1µF

33

100

33

0.1µF

2

BAL.

Test Circuit 4

S-PARAMETER TEST SET

TRANSFORMER

NH0300HB

50
UNBAL.

CAL

TEST

SD00320

Figure 3. Test Circuits 3 and 4

6