Philips SA5211 User Manual

1. Description

2. Features

SA5211

Transimpedance amplifier (180 MHz)

Rev. 03 — 07 October 1998 Product specification

The SA5211 is a 28 kΩ transimpedance, wide-band, low noise amplifier with
differential outputs, particularly suitable for signal recovery in fiber optic receivers.
The part is ideally suited for many other RF applications as a general purpose gain
block.

■ Extremely low noise: 1.8 pA / √Hz

■ Single 5 V supply

■ Large bandwidth: 180 MHz

■ Differential outputs

■ Low input/output impedances

■ High power supply rejection ratio

■ 28 kΩ differential transresistance

3. Applications

c

c

■ Fiber optic receivers, analog and digital

■ Current-to-voltage converters

■ Wide-band gain block

■ Medical and scientific Instrumentation

■ Sensor preamplifiers

■ Single-ended to differential conversion

■ Low noise RF amplifiers

■ RF signal processing

Philips Semiconductors

4. Pinning information

4.1 Pinning

SA5211

Transimpedance amplifier (180 MHz)

D Package

1

GND

2

2

GND

2

3

NC

4

I

IN

5

NC

6

V

CC1

78

V

CC2

TOP VIEW

14

OUT (–)

13

GND

12

OUT (+)

11

GND

10

GND

9

GND
GND

SD00318

2

1

1

1
1

Fig 1. Pin configuration.

5. Ordering information

Table 1: Ordering information

Type number Package

Name Description Version Temperature

range (°C)

SA5211D SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 −40 to +85

6. Limiting values

Table 2: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CC

T

amb

power supply − 6V
operating ambient

-40 +85 °C

temperature range

T

J

operating junction

-55 +150 °C

temperature range

T

STG

P

D MAX

I

IN MAX

θ

JA

[1] Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:

[2] The use of a pull-up resistor to V

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Product specification Rev. 03 — 07 October 1998 2 of 28

storage temperature range -65 +150 °C
power dissipation, TA=25°C

(still-air)
maximum input current

[1]

[2]

− 1.0 W

− 5mA

thermal resistance − 125 °C/W

θJA= 125 °C/W

, for the PIN diode is recommended.

CC

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

SA5211

Transimpedance amplifier (180 MHz)

Table 3: Recommended operating conditions

Symbol Parameter Conditions Min Max Unit

V

CC

T

amb

T

J

supply voltage 4.5 5.5 V
ambient temperature range -40 +85 °C
junction temperature range -40 +105 °C

7. Static characteristics

Table 4: DC electrical characteristics

Min and Max limits apply over operating temperature range at VCC= 5 V, unless otherwise specified. Typical data apply at

= 5 V and T

V

CC

Symbol Parameter Test conditions Min Typ Max Unit

V

IN

V

O±

V

OS

I

CC

I

OMAX

I

IN

I

IN MAX

=25°C.

amb

input bias voltage 0.55 0.8 1.00 V
output bias voltage 2.7 3.4 3.7 V
output offset voltage − 0 130 mV
supply current 20 26 31 mA
output sink/source current
input current

(2% linearity)
maximum input current

overload threshold

[1]

Test Circuit 8,
Procedure 2

Test Circuit 8,
Procedure 4

34− mA

±20 ±40 −µA

±30 ±60 −µA

[1] Test condition: output quiescent voltage variation is less than 100 mV for 3 mA load current.

8. Dynamic characteristics

Table 5: AC electrical characteristics

Typical data and Min and Max limits apply at VCC= 5 V and T

Symbol Parameter Test conditions Min Typ Max Unit

R

R
R

R
f

R
C

T

O
T

O

3dB

IN
IN

transresistance (differential output) DC tested RL = ∞

output resistance (differential output) DC tested − 30 −Ω
transresistance (single-ended output) DC tested

output resistance (single-ended output) DC tested − 15 −Ω
bandwidth (-3dB) TA = 25°C

input resistance − 200 −Ω
input capacitance − 4 − pF

∆R/∆V transresistance power supply sensitivity V
∆R/∆T transresistance ambient temperature sensitivity ∆T

I

N

RMS noise current spectral density (referred to
input)

I

T

integrated RMS noise current over the
bandwidth (referred to input)

=25°C

amb

21 28 36 kΩ

Test Circuit 8, Procedure 1

10.5 14 18.0 kΩ

RL = ∞

− 180 − MHz

Test circuit 1

= 5±0.5 V − 3.7 − %/V

CC

= T

amb

amb MAX-Tamb MIN

Test Circuit 2

− 0.025 − %/°C

− 1.8 − pA/√Hz

f = 10 MHz
TA = 25 °C

TA = 25 °C

−−−−

Test Circuit 2

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Product specification Rev. 03 — 07 October 1998 3 of 28

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

SA5211

Transimpedance amplifier (180 MHz)

Table 5: AC electrical characteristics

Typical data and Min and Max limits apply at VCC= 5 V and T

…continued

amb

=25°C

Symbol Parameter Test conditions Min Typ Max Unit

I

n

I

n

PSRR power supply rejection ratio

[1]

CS=0

∆f = 50 MHz
∆f = 100 MHz
∆f = 200 MHz

CS= 1pF ∆f = 50 MHz

∆f = 100 MHz
∆f = 200 MHz

(V

CC1

= V

CC2

[2]

)

DC tested, ∆V
Equivalent AC

= 0.1V

CC

−

13

−

nA

−

20

−

−

35

−

−

13

−

nA

−

21

−

−

41

−

23 32 − dB

Test Circuit 3

PSRR power supply rejection ratio

) DC tested, ∆VCC = 0.1V

CC1

23 32 − dB

[2]

(V

Equivalent AC
Test Circuit 4

PSRR power supply rejection ratio

[2]

(V

) DC tested, ∆VCC = 0.1V

CC2

45 65 − dB
Equivalent AC
Test Circuit 5

PSRR power supply rejection ratio (ECL

[2]

V

OMAX

configuration)
maximum differential output voltage swing RL = ∞

f = 0.1 MHz
Test Circuit 6

− 23 − dB

1.7 3.2 − V

Test Circuit 8, Procedure 3

V

IN MAX

t

R

maximum input amplitude for output duty cycle
of 50±5%

rise time for 50mV output signal

[3]

[4]

Test Circuit 7 160 −−mV

Test Circuit 7 − 0.8 1.8 ns

P-P

P-P

[1] Package parasitic capacitance amounts to about 0.2pF
[2] PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in VCC lines.
[3] Guaranteed by linearity and overload tests.
[4] tR defined as 20 to 80% rise time. It is guaranteed by -3dB bandwidth test.

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Product specification Rev. 03 — 07 October 1998 4 of 28

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Philips Semiconductors

9. Test circuits

SA5211

Transimpedance amplifier (180 MHz)

ZO = 50

PORT 1

0.1µF

50

NETWORK ANALYZER

S-PARAMETER TEST SET

5V

V

R = 1k

GND

CC1

IN DUT

1

V

CC2

OUT

OUT

GND

PORT 2

0.1µF

33

0.1µF

33

2

Test Circuit 1

SPECTRUM ANALYZER

V

CC1

NC

IN DUT

GND

SINGLE-ENDED DIFFERENTIAL

V

OUT

RT

RO ≈ Z

Z

= 50

O

= 50

R

L

5V

V

CC2

33

OUT

GND

33

2

OUT

1

R = 2 × S21 × RR

≈

V

IN

1 + S22

O



1 – S22

AV = 60DB

0.1µF

0.1µF

– 33 RO = 2Z

= 50

Z

O

= 50

R

L

V

OUT

=

T

V

IN

R = 4 × S21 × R

1 + S22

O



1 – S22

– 66

Test Circuit 2

SD00319

Fig 2. Test circuits 1 and 2.

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Product specification Rev. 03 — 07 October 1998 5 of 28

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

SA5211

Transimpedance amplifier (180 MHz)

NETWORK ANALYZER

5V

10µF

10µF

0.1µF

0.1µF

IN

V

GND

CC1

16

1

CURRENT PROBE

1mV/mA

V

CC2

GND

33

33

2

OUT

OUT

0.1µF

0.1µF

PORT 1 PORT 2

100
BAL.

S-PARAMETER TEST SET

TRANSFORMER

NH0300HB

50
UNBAL.

CAL

TEST

Test Circuit 3

NETWORK ANALYZER

5V

10µF

0.1µF
PORT 1 PORT 2

S-PARAMETER TEST SET

CURRENT PROBE

OUT

OUT

V

GND

CC1

1mV/mA

33

33

2

Test Circuit 4

0.1µF

0.1µF

100
BAL.

TRANSFORMER

NH0300HB

50
UNBAL.

CAL

TEST

SD00320

10µF

0.1µF

5V

10µF

0.1µF

16

V

CC2

IN

GND

1

Fig 3. Test circuits 3 and 4.

9397 750 07427

Product specification Rev. 03 — 07 October 1998 6 of 28

© Philips Electronics N.V. 2001. All rights reserved.

Philips Semiconductors

SA5211

Transimpedance amplifier (180 MHz)

NETWORK ANALYZER

5V

5V

10µF

10µF

10µF

0.1µF

0.1µF

0.1µF

IN

V

GND

CC1

PORT 1 PORT 2

CURRENT PROBE

1mV/mA

16

V

CC2

OUT

OUT

1

GND

0.1µF

33

100

33

0.1µF

2

BAL.

S-PARAMETER TEST SET

TRANSFORMER

NH0300HB

50
UNBAL.

CAL

TEST

Test Circuit 5

NETWORK ANALYZER

S-PARAMETER TEST SET

GND

PORT 1 PORT 2

CURRENT PROBE

OUT

OUT

V

GND

CC2

1mV/mA

2

0.1µF

33

33

Test Circuit 6

0.1µF

100
BAL.

TRANSFORMER

NH0300HB

50
UNBAL.

CAL

TEST

SD00321

5.2V

10µF

10µF

0.1µF

0.1µF

16

GND

1

IN

V

CC1

Fig 4. Test circuits 5 and 6.

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Product specification Rev. 03 — 07 October 1998 7 of 28

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Philips Semiconductors

PULSE GEN.

50

0.1µF

1k

V

CC1VCC2

IN

DUT

GND

1

OUT

OUT

GND

SA5211

Transimpedance amplifier (180 MHz)

0.1µF

33

33

0.1µF

2

A

Z

= 50Ω

O

OSCILLOSCOPE

B

Z

= 50Ω

O

Measurement done using

differential wave forms

Fig 5. Test circuit 7.

Test Circuit 7

SD00322

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Product specification Rev. 03 — 07 October 1998 8 of 28

Philips Semiconductors

Typical Differential Output Voltage

vs Current Input

5V

SA5211

Transimpedance amplifier (180 MHz)

OUT +

IN

DUT

GND

1

OUT –

GND

2

CURRENT INPUT (µA)

IIN (µA)

2.00

1.60

1.20

0.80

0.40

0.00

–0.40

–0.80

DIFFERENTIAL OUTPUT VOLTAGE (V)

–1.20

–1.60

–2.00

–100 –80 –60 –40 –20 0 20 40 60 80 100

+

V

(V)

OUT

–

NE5211 TEST CONDITIONS

Procedure 1 R

Procedure 2 Linearity = 1 – ABS((V

Procedure 3 V

Procedure 4 I

Test Circuit 8

measured at 15µA

T

R

= (VO1 – VO2)/(+15µA – (–15µA))

T

Where: V

Where: V

Where: VO7 Measured at IIN = +65µA

IN

V
Where: V

Measured at IIN = +15µA

O1

Measured at IIN = –15µA

V

O2

– VOB) / (VO3 – VO4))

OA

Measured at IIN = +30µA

O3

Measured at IIN = –30µA

V

O4

VOA = RT × (+ 30 µA) + V
VOB = RT × (– 30 µA) + V

= VO7 – V

OMAX

Test Pass Conditions:

– VO5 > 20mV and V06 – VO5 > 50mV

O7

O8

Measured at IIN = –65µA

V

O8

Measured at IIN = +40µA

O5

Measured at IIN = –400µA

V

O6

V

Measured at IIN = +65µA

O7

Measured at IIN = –65µA

V

O8

OB
OB

SD00331

Fig 6. Test circuit 8.

9397 750 07427

Product specification Rev. 03 — 07 October 1998 9 of 28

© Philips Electronics N.V. 2001. All rights reserved.