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INTEGRATED CIRCUITS
SA2421
2.45 GHz low voltage RF transceiver
Product specification
Supersedes data of 2000 Feb 11
2000 Mar 13
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Philips Semiconductors Product specification
SA24212.45 GHz low voltage RF transceiver
DESCRIPTION
The SA2421 transceiver is a combined low–noise amplifier, receive
mixer, transmit mixer and LO buffer IC designed using a 20 GHz f
T
BiCMOS process, QUBiC2, for high–performance low–power
communication systems for 2.4–2.5 GHz applications. The LNA has
a 3.2 dB noise figure at 2.45 GHz with 14.3 dB gain and an IP3
intercept of –3 dBm at the input. The wide–dynamic–range receive
mixer has a 11.2 dB noise figure and an input IP3 of +2.5 dBm at
2.45 GHz. The nominal current drawn from a single 3 V supply is
34 mA in transmit mode and 20 mA in receive mode. The SA2421
differs from the SA2420 by removal of the LO doubler and LO
switch. The LNA reverse isolation is improved, and a separate pin is
allocated for the transmit output.
FEA TURES
•Low current consumption: 34 mA nominal transmit mode and
20 mA nominal receive mode
•High system power gain: 24 dB (LNA + Mixer) at 2.45 GHz
•Excellent gain stability versus temperature and supply voltage
•Separate Rx IN and Tx OUT pins
•Wide IF range: 50–500 MHz
•–10dBm typical LO input power
•Improved LNA reverse isolation S12
•TSSOP24 package
PIN CONFIGURATION
GND
1
LNA IN
2
GND
3
4
GND
GND
LOP
Tx/Rx
LOM
5
6
7
8
9
10
11
12
Rx IF OUT
Rx IF OUT
Tx IF IN
Tx IF IN
Figure 1. Pin configuration
APPLICATIONS
•IEEE 802.11 (WLAN)
•2.45 GHz ISM band
DH Package
V
24
LNA OUT
23
GND
22
ATTEN SW
21
GND
20
19
Rx IN
GND
18
Tx OUT
17
GND
16
GND
15
V
14
CHIP EN
13
SR01756
CC
LO
CC
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP) –40°C to +85°C SA2421DH SOT355-1
BLOCK DIAGRAM
V
24 23 22 21 20
GND GND
LNA
OUT GND
CC
LNA
LNA
IN
GND
ATTEN
SW
ATTENUATOR
43215
GND
Figure 2. SA2421 block diagram
GND
Rx IF
OUT
Rx IN GND
19 18 17 16 15
RX
RX TX
Rx IF
OUT
Tx OUT GND
PRE-DRIVER
BPF
761098
Tx IFINTx IF
IN
LO
BUFFER
X1
V
CC
LO
14 13
Tx/RxGND LOP
CHIP
EN
1211
LOM
SR01757
2000 Mar 13 853-2189 23308
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Philips Semiconductors Product specification
SA24212.45 GHz low voltage RF transceiver
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
V
CC
V
IN
P
D
T
JMAX
P
MAX
T
STG
NOTES:
1. Transients exceeding these conditions may damage the product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may
impact product reliability θJA: 24-Pin TSSOP = 117°C/W
3. IC is protected for ESD voltages up to 2000 V, human body model.
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
V
CC
T
amb
Supply voltage –0.3 to +6 V
Voltage applied to any pin –0.3 to (VCC + 0.3) V
Power dissipation, T
24-Pin Plastic TSSOP
= 25°C (still air)
amb
555 mW
Maximum operating junction temperature 150 °C
Maximum power (RF/IF/LO pins) +20 dBm
Storage temperature range –65 to +150 °C
Supply voltage 2.7 to 5.5 V
Operating ambient temperature range –40 to +85 °C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, T
I
CCTX
I
CCRX
I
CC OFF
V
LNA-IN
V
LO GHz
V
TX IF
V
TX IFB
BIAS
= 25°C; unless otherwise stated.
amb
Total supply current, Transmit Tx/Rx = Hi 22 34 42 mA
Total supply current, Receive
Power down mode
LNA input voltage Receive mode 0.855 V
LO buffer DC input voltage Tx/Rx = Lo –0.1 V
Tx Mixer input voltage Tx/Rx = Hi 1.7 V
Tx Mixer input voltage Tx/Rx = Hi 1.7 V
p
LIMITS
MIN TYP MAX
Tx/Rx mode = Lo,
LNA = Hi gain
14 20 26 mA
Tx/Rx = GND
Atten SW = V
Enable = GND
CC
10 µA
CC
Logic 1 6 µA
Logic 0 0 µA
V
2000 Mar 13
3
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Philips Semiconductors Product specification
SA24212.45 GHz low voltage RF transceiver
AC ELECTRICAL CHARACTERISTICS
VCC = +3 V, T
f
RF
f
IF
LNA High gain mode (In = Pin 2; Out = 23)
S
21
S
12
S
11
S
22
ISO Isolation: LOX to LNA
P
-1dB
IP3 Amplifier input third order intercept
NF Amplifier noise figure (50Ω) LNA gain = Hi 3.1 3.2 3.3 dB
LNA High Overload Mode (low gain mode)
S
21
S
12
S
11
S
22
ISO Isolation: LOX to LNA
P
-1dB
IP3 Amplifier input third order intercept
NF Amplifier noise figure (50 Ω) LNA gain = Low 18.5 dB
Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = –10 dBm)
PG
C
S
11–RF
NF
M
P
-1dB
IP3 Input third order intercept f1 – f2 = 1MHz 1.8 2.2 2.6 dBm
Rx Mixer Spurious Components (PIN = P
P
RF-IF
P
LO-IF
= 25°C; LOIN = –10 dBm @ 2.1 GHz; fRF = 2.45 GHz; unless otherwise stated.
amb
LIMITS
MIN –3σ TYP +3σ MAX
RF frequency range
IF frequency range
3
3
2.4 2.45 2.5 GHz
300 350 400 MHz
Amplifier gain LNA gain = Hi 13.3 14.3 15.3 dB
Amplifier reverse isolation LNA gain = Hi –32 dB
Amplifier input match
Amplifier output match
1
1
IN
LNA gain = Hi –10 dB
LNA gain = Hi –9 dB
LNA gain = Hi –43 dB
Amplifier input 1dB gain compression LNA gain = Hi –15 dBm
f1 - f2 = 1 MHz,
LNA gain = Hi
–4.5 –3.2 –1.9 dBm
Amplifier gain LNA gain = Low –18.5 –19.4 –20.3 dB
Amplifier reverse isolation LNA gain = Low –26 dB
Amplifier input match
Amplifier output match
1
1
IN
LNA gain = Low –8 dB
LNA gain = Low –8 dB
LNA gain = Low –45 dB
Amplifier input 1dB gain compression LNA gain = Low 2 dBm
Power conversion gain into 50 Ω :
matched to 50 W using external balun
circuitry.
Input match at RF (2.45 GHz)
1
f1 – f2 = 1 MHz,
LNA gain = Low
fS = 2.45 GHz,
f
= 2.1 GHz,
LO
fIF = 350 MHz
9.5 10 10.5 dB
18 dBm
–11 dB
SSB noise figure (2.45 GHz) (50 Ω) 9.8 11.2 12.5 dB
Mixer input 1 dB gain compression –10.5 dBm
)
-1dB
CL = 2 pF per side -35 dBc
CL = 2 pF per side -32 dBc
RF feedthrough to IF
LO feedthrough to IF
4
5
2000 Mar 13
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