Philips SA2421DH Datasheet

INTEGRATED CIRCUITS

SA2421

2.45 GHz low voltage RF transceiver

Product specification
Supersedes data of 2000 Feb 11




2000 Mar 13

Philips Semiconductors Product specification

SA24212.45 GHz low voltage RF transceiver

DESCRIPTION

The SA2421 transceiver is a combined low–noise amplifier, receive
mixer, transmit mixer and LO buffer IC designed using a 20 GHz f

T

BiCMOS process, QUBiC2, for high–performance low–power
communication systems for 2.4–2.5 GHz applications. The LNA has
a 3.2 dB noise figure at 2.45 GHz with 14.3 dB gain and an IP3
intercept of –3 dBm at the input. The wide–dynamic–range receive
mixer has a 11.2 dB noise figure and an input IP3 of +2.5 dBm at

2.45 GHz. The nominal current drawn from a single 3 V supply is
34 mA in transmit mode and 20 mA in receive mode. The SA2421
differs from the SA2420 by removal of the LO doubler and LO
switch. The LNA reverse isolation is improved, and a separate pin is
allocated for the transmit output.

FEA TURES

•Low current consumption: 34 mA nominal transmit mode and

20 mA nominal receive mode

•High system power gain: 24 dB (LNA + Mixer) at 2.45 GHz

•Excellent gain stability versus temperature and supply voltage

•Separate Rx IN and Tx OUT pins

•Wide IF range: 50–500 MHz

•–10dBm typical LO input power

•Improved LNA reverse isolation S12

•TSSOP24 package

PIN CONFIGURATION

GND

1

LNA IN

2

GND

3
4

GND

GND

LOP

Tx/Rx

LOM

5
6
7
8

9
10
11
12

Rx IF OUT
Rx IF OUT

Tx IF IN
Tx IF IN

Figure 1. Pin configuration

APPLICATIONS

•IEEE 802.11 (WLAN)

•2.45 GHz ISM band

DH Package

V

24

LNA OUT

23

GND

22

ATTEN SW

21

GND

20
19

Rx IN
GND

18

Tx OUT

17

GND

16

GND

15

V

14

CHIP EN

13

SR01756

CC

LO

CC

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP) –40°C to +85°C SA2421DH SOT355-1

BLOCK DIAGRAM

V

24 23 22 21 20

GND GND

LNA

OUT GND

CC

LNA

LNA

IN

GND

ATTEN

SW

ATTENUATOR

43215

GND

Figure 2. SA2421 block diagram

GND

Rx IF
OUT

Rx IN GND

19 18 17 16 15

RX

RX TX

Rx IF
OUT

Tx OUT GND

PRE-DRIVER

BPF

761098

Tx IFINTx IF

IN

LO

BUFFER

X1

V

CC

LO

14 13

Tx/RxGND LOP

CHIP

EN

1211

LOM

SR01757

2000 Mar 13 853-2189 23308

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

I

Input bias current

SA24212.45 GHz low voltage RF transceiver

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

CC

V

IN

P

D

T

JMAX

P

MAX

T

STG

NOTES:

1. Transients exceeding these conditions may damage the product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may
impact product reliability θJA: 24-Pin TSSOP = 117°C/W

3. IC is protected for ESD voltages up to 2000 V, human body model.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

V

CC

T

amb

Supply voltage –0.3 to +6 V
Voltage applied to any pin –0.3 to (VCC + 0.3) V
Power dissipation, T

24-Pin Plastic TSSOP

= 25°C (still air)

amb

555 mW
Maximum operating junction temperature 150 °C
Maximum power (RF/IF/LO pins) +20 dBm
Storage temperature range –65 to +150 °C

Supply voltage 2.7 to 5.5 V
Operating ambient temperature range –40 to +85 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3V, T

I

CCTX

I

CCRX

I

CC OFF

V

LNA-IN

V

LO GHz

V

TX IF

V

TX IFB

BIAS

= 25°C; unless otherwise stated.

amb

Total supply current, Transmit Tx/Rx = Hi 22 34 42 mA
Total supply current, Receive

Power down mode

LNA input voltage Receive mode 0.855 V
LO buffer DC input voltage Tx/Rx = Lo –0.1 V
Tx Mixer input voltage Tx/Rx = Hi 1.7 V
Tx Mixer input voltage Tx/Rx = Hi 1.7 V

p

LIMITS

MIN TYP MAX

Tx/Rx mode = Lo,

LNA = Hi gain

14 20 26 mA

Tx/Rx = GND

Atten SW = V

Enable = GND

CC

10 µA

CC

Logic 1 6 µA
Logic 0 0 µA

V

2000 Mar 13

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA24212.45 GHz low voltage RF transceiver

AC ELECTRICAL CHARACTERISTICS

VCC = +3 V, T

f

RF

f

IF

LNA High gain mode (In = Pin 2; Out = 23)

S

21

S

12

S

11

S

22

ISO Isolation: LOX to LNA

P

-1dB

IP3 Amplifier input third order intercept

NF Amplifier noise figure (50Ω) LNA gain = Hi 3.1 3.2 3.3 dB

LNA High Overload Mode (low gain mode)

S

21

S

12

S

11

S

22

ISO Isolation: LOX to LNA

P

-1dB

IP3 Amplifier input third order intercept

NF Amplifier noise figure (50 Ω) LNA gain = Low 18.5 dB

Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = –10 dBm)

PG

C

S

11–RF

NF

M

P

-1dB

IP3 Input third order intercept f1 – f2 = 1MHz 1.8 2.2 2.6 dBm

Rx Mixer Spurious Components (PIN = P

P

RF-IF

P

LO-IF

= 25°C; LOIN = –10 dBm @ 2.1 GHz; fRF = 2.45 GHz; unless otherwise stated.

amb

LIMITS

MIN –3σ TYP +3σ MAX

RF frequency range
IF frequency range

3

3

2.4 2.45 2.5 GHz

300 350 400 MHz

Amplifier gain LNA gain = Hi 13.3 14.3 15.3 dB
Amplifier reverse isolation LNA gain = Hi –32 dB
Amplifier input match
Amplifier output match

1

1

IN

LNA gain = Hi –10 dB
LNA gain = Hi –9 dB
LNA gain = Hi –43 dB

Amplifier input 1dB gain compression LNA gain = Hi –15 dBm

f1 - f2 = 1 MHz,

LNA gain = Hi

–4.5 –3.2 –1.9 dBm

Amplifier gain LNA gain = Low –18.5 –19.4 –20.3 dB
Amplifier reverse isolation LNA gain = Low –26 dB
Amplifier input match
Amplifier output match

1

1

IN

LNA gain = Low –8 dB
LNA gain = Low –8 dB
LNA gain = Low –45 dB

Amplifier input 1dB gain compression LNA gain = Low 2 dBm

Power conversion gain into 50 Ω :
matched to 50 W using external balun
circuitry.

Input match at RF (2.45 GHz)

1

f1 – f2 = 1 MHz,

LNA gain = Low

fS = 2.45 GHz,
f

= 2.1 GHz,

LO

fIF = 350 MHz

9.5 10 10.5 dB

18 dBm

–11 dB
SSB noise figure (2.45 GHz) (50 Ω) 9.8 11.2 12.5 dB
Mixer input 1 dB gain compression –10.5 dBm

)

-1dB

CL = 2 pF per side -35 dBc
CL = 2 pF per side -32 dBc

RF feedthrough to IF
LO feedthrough to IF

4
5

2000 Mar 13

4