Philips SA2420DH Datasheet

INTEGRATED CIRCUITS

SA2420

Low voltage RF transceiver — 2.45GHz

Product specification 1997 May 23

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Philips Semiconductors Product specification

SA2420Low voltage RF transceiver — 2.45 GHz

DESCRIPTION

The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buf fer IC designed for high-performance low-power communication systems for

2.4-2.5GHz applications. The LNA has a 2.5dB noise figure at

2.45GHz with 14dB gain and an IP3 intercept of -3dBm at the input. The gain is stabilized by on-chip compensation to vary less than ±0.2dB over the -40 to +85°C temperature range. The wide-dynamic-range receive mixer has a 10.9dB noise figure and an input IP3 of +2.8dBm at 2.45GHz. The nominal current drawn from a single 3V supply is 37mA in transmit mode and 22mA in receive mode.

FEATURES

•Low current consumption: 37mA nominal transmit mode and

22mA nominal receive mode

•Fabricated on a high volume, rugged BiCMOS technology

•High system power gain: 22.5dB (LNA + Mixer) at 2.45GHz

•TSSOP24 package

•Excellent gain stability versus temperature and supply voltage

•-10dBm LO input power can be used to drive the mixer

•Operates with either full or half frequency LO

•Wide IF range: 50–500MHz

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

24-Pin Plastic Thin Shrink Small Outline Package (Surface-mount, TSSOP)

PIN CONFIGURATION

DH Package

GND

LNA IN

GND

3 4

GND

OUT

GND

LOP

LO SW

LOM

5 6 7

9 10 11 12

Rx IF OUT Rx IF

Tx IF IN Tx IF

Figure 1. Pin Configuration

APPLICATIONS

•2.45GHz WLAN front-end (802.11, ISM)

-40 to +85°C

SA2420DH SOT355-1

V LNA OUT

GND

ATTEN SW

GND

20 19

RF IN/OUT GND

Tx/Rx SW

GND

15 14

V CHIP EN

SR00164

BLOCK DIAGRAM

24 23 22 21 20

GND GND

LNA OUT

LNA

GND

ATTENUATOR

ATTEN

GND

RF IN/

OUT GND

GND

Tx/Rx

SW GND

19 18 17 16 15

PRE-DRIVER

BPF

RX TX

43215

GND

Rx IF OUT

761098

Tx IFINTx IF

Figure 2. SA2420 Block Diagram

BUFFER

CHIP

14 13

BPF

FREQ.

DBLER

1211

LOGND LOP SW

LOM

X2X1

SR00165

1997 May 23 853–1984 18069

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA2420Low voltage RF transceiver — 2.45 GHz

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

JMAX

MAX

STG

NOTE:

1. Transients exceeding these conditions may damage the product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, and absolute maximum ratings may impact product reliability θ

3. IC is protected for ESD voltages for 2000V , excepts pins 10 and 12, which are protected up to 500V.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

Supply voltage -0.3 to +6 V Voltage applied to any pin -0.3 to (VCC + 0.3) V Power dissipation, TA = 25°C (still air)

24-Pin Plastic TSSOP

555

mW Maximum operating junction temperature 150 °C Maximum power (RF/IF/LO pins) +20 dBm Storage temperature range –65 to +150 °C

: 24-Pin TSSOP = 117°C/W

Supply voltage 2.7 to 5.5 V Operating ambient temperature range -40 to +85 °C Operating junction temperature -40 to +105 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; unless otherwise stated.

CCTX

CCRX

CC OFF

LNA-IN

LNA-OUT

LO 2.1 GHz

LO 1.05 GHz

TX IF

TX IFB

Supply current, Transmit LO mode = Hi 25 37 45 mA Supply current, Receive LO mode = Hi 15 22 28 mA

Power down mode (Tx/Rx SW = Low) LNA input voltage Receive mode 0.855 V

LNA output bias current Receive mode 4.0 mA LO buffer DC input voltage LO mode = Hi 2.1 V LO buffer DC input voltage LO mode = Low 2.1 V Tx Mixer input voltage Transmit mode 1.7 V Tx Mixer input voltage Transmit mode 1.7 V

LO mode = Hi,

LNA gain = Hi

LIMITS

MIN -4σ TYP +4σ MAX

0 10 µA

1997 May 23

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA2420Low voltage RF transceiver — 2.45 GHz

AC ELECTRICAL CHARACTERISTICS

VCC = +3V, TA = 25°C; LOIN = -10dBm @ 2.1GHz; fRF = 2.45GHz; unless otherwise stated.

LIMITS

MIN -4σ TYP +4σ MAX

Low Noise Amplifier (In = Pin 2; Out = 23)

∆S21/∆T Gain temperature sensitivity LNA gain = Hi -0.002 dB/°C

∆S21/∆VCCGain VCC drift LNA gain = Hi 0.3 dB/V

S S S

ISO Isolation: LO1 to LNA

-1dB

IP3 Amplifier input third order intercept

NF Amplifier noise figure (50Ω) LNA gain = Hi 2.3 2.5 2.7 dB

LNA High Overload Mode

∆S21/∆T Gain temperature sensitivity LNA gain = Low -0.01 dB/°C

∆S21/∆VCCGain VCC drift LNA gain = Low 0.3 dB/V

S S S

ISO Isolation: LO1 to LNA

-1dB

IP3 Amplifier input third order intercept

NF Amplifier noise figure (50Ω) LNA gain = Low 17 dB

Rx Mixer (RF = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = -10dBm)

∆GC/∆T Gain temperature drift -0.016 dB/°C

∆GC/∆VCCGain VCC drift 0.34 dB/V

11–RF

-1dB

IP3 Input third order intercept f1 - f2 = 1MHz 1.7 2.8 3.9 dBm

Amplifier gain LNA gain = Hi 12.7 14.0 15.3 dB

Amplifier reverse isolation LNA gain = Hi -22 dB

Amplifier input match

Amplifier output match

LNA gain = Hi -8 dB LNA gain = Hi -8 dB

LO mode = Hi,

LNA gain = Hi

-45 dB

Amplifier input 1dB gain compression LNA gain = Hi -15 dBm

f1 - f2 = 1MHz,

LNA gain = Hi

Amplifier gain LNA gain = Low –14.0 -13.3 –12.0 dB

Amplifier reverse isolation LNA gain = Low -16 dB

Amplifier input match

Amplifier output match

LNA gain = Low -8 dB LNA gain = Low -8 dB

LO mode = Hi,

LNA gain = Low

-3 dBm

-45 dB

Amplifier input 1dB gain compression LNA gain = Low +6 dBm

f1 - f2 = 1MHz,

LNA gain = Low

Power conversion gain into 50Ω : matched to 50W using external balun

circuitry.

Input match at RF (2.45GHz) SSB noise figure (2.45GHz) (50Ω) 10.2 10.9 11.6 dB

fS = 2.45GHz, fLO = 2.1GHz,

= 350MHz

7.9 8.5 9.1 dB

17 dBm

-15 dB

Mixer input 1dB gain compression –11.4 -10.3 –9.2 dBm

RF frequency range IF frequency range

2.4 2.45 2.5 GHz

300 350 400 MHz

1997 May 23

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA2420Low voltage RF transceiver — 2.45 GHz

AC ELECTRICAL CHARACTERISTICS (continued)

LIMITS

MIN -4σ TYP +4σ MAX

Rx Mixer Spurious Components (PIN = P

P P

RF-IF LO-IF

RF feedthrough to IF CL = 2pF per side -35 dBc LO feedthrough to IF CL = 2pF per side -35 dBc

Tx Mixer (RF = Pin 19, IF = Pins 7 and 8, LO = Pin 10 or 12, PLO = -10dBm)

Power conversion gain: RL = 50Ω

RS = 50Ω

∆GC/∆T Gain temperature drift -0.032 dB/°C

∆GC/∆VCCGain voltage drift 0.4 dB/V

11–RF

-1dB

Output match at RF (2.45GHz) SSB noise figure (2.45GHz) (50Ω) 13.2 dB

Output 1dB gain compression 1.5 2.9 4.3 dBm

IP3 Output third order intercept f1 - f2 = 1MHz 10.1 +11.5 12.9 dBm

RF frequency range IF frequency range

Tx Mixer Spurious Components (P

IF-RF

LO-RF

2LO-RF

IMAGE-RF

IF feedthrough to RF -29 dBc LO feedthrough to RF -20 dBc 2*LO feedthrough to RF -25 dBc Image feedthrough to RF -0 dBc

OUT

LO Buffer: Full and Half Frequency inputs

11-LO1

11-LO2

LO2G

LO1G

Switching

Rx-Tx

Tx-Rx

POWER UP

PWR DWN

LO drive level (see figure 16) -10 -7 5 dBm

Mixer input match (LO = 2.1GHz) LO mode = Hi -10 dB Mixer input match (LO = 1.05GHz) LO mode = Low -10 dB LO2G frequency range LO1G frequency range

3 3

Receive-to-transmit switching time 1 µs Transmit-to-Receive switching time 1 µs Chip enable time 1 µs Chip disable time 1 µs

NOTES:

1. With simple external matching

2. With 50pF coupling capacitors on all RF and IF parts

3. This part has been optimized for the frequency range at 2.4–2.5 GHz. Operation outside this frequency range may yield performance other than specified in this datasheet.

= P

-1dB

)

fS = 2.45GHz, fLO = 2.1GHz,

15.0 17 19.9 dB

fIF = 350MHz

-10 dB

2.4 2.45 2.5 GHz

300 350 400 MHz

)

LO mode = Hi 1.9 2.1 2.3 GHz

LO mode = Low 0.85 1.05 1.25 GHz

1997 May 23

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